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Title: Deep‐Level Defects and Impurities in InGaN Alloys

Authors:
ORCiD logo [1];  [2];  [3];  [4];  [5]; ORCiD logo [6]
  1. Materials DepartmentUniversity of California Santa Barbara CA 93106-5050 USA, US Naval Research LaboratoryCenter for Computational Materials Science Washington DC 20375 USA
  2. Department of Physics and AstronomyStony Brook University Stony Brook NY 11794-3800 USA, Center for Computational Quantum PhysicsFlatiron Institute 162 5th Avenue New York NY 10010 USA
  3. Materials DepartmentUniversity of California Santa Barbara CA 93106-5050 USA, Department of Materials Science and EngineeringUniversity of California Berkeley CA 94720-1760 USA
  4. US Naval Research LaboratoryCenter for Computational Materials Science Washington DC 20375 USA
  5. Center for Physical Sciences and Technology (FTMC) Vilnius LT-10257 Lithuania
  6. Materials DepartmentUniversity of California Santa Barbara CA 93106-5050 USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1575092
Grant/Contract Number:  
SC0010689
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physica Status Solidi B. Basic Solid State Physics
Additional Journal Information:
Journal Name: Physica Status Solidi B. Basic Solid State Physics; Journal ID: ISSN 0370-1972
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Wickramaratne, Darshana, Dreyer, Cyrus E., Shen, Jimmy-Xuan, Lyons, John L., Alkauskas, Audrius, and Van de Walle, Chris G. Deep‐Level Defects and Impurities in InGaN Alloys. Germany: N. p., 2019. Web. doi:10.1002/pssb.201900534.
Wickramaratne, Darshana, Dreyer, Cyrus E., Shen, Jimmy-Xuan, Lyons, John L., Alkauskas, Audrius, & Van de Walle, Chris G. Deep‐Level Defects and Impurities in InGaN Alloys. Germany. doi:10.1002/pssb.201900534.
Wickramaratne, Darshana, Dreyer, Cyrus E., Shen, Jimmy-Xuan, Lyons, John L., Alkauskas, Audrius, and Van de Walle, Chris G. Wed . "Deep‐Level Defects and Impurities in InGaN Alloys". Germany. doi:10.1002/pssb.201900534.
@article{osti_1575092,
title = {Deep‐Level Defects and Impurities in InGaN Alloys},
author = {Wickramaratne, Darshana and Dreyer, Cyrus E. and Shen, Jimmy-Xuan and Lyons, John L. and Alkauskas, Audrius and Van de Walle, Chris G.},
abstractNote = {},
doi = {10.1002/pssb.201900534},
journal = {Physica Status Solidi B. Basic Solid State Physics},
number = ,
volume = ,
place = {Germany},
year = {2019},
month = {11}
}

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This content will become publicly available on November 19, 2020
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Works referenced in this record:

Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
journal, July 1974


Effects of carbon on the electrical and optical properties of InN, GaN, and AlN
journal, January 2014


Projector augmented-wave method
journal, December 1994


Energetics of native point defects in GaN: A density-functional study
journal, November 2015


Controlling the conductivity of InN
journal, March 2010

  • Van de Walle, C. G.; Lyons, J. L.; Janotti, A.
  • physica status solidi (a), Vol. 207, Issue 5
  • DOI: 10.1002/pssa.200983122

Hybrid functionals based on a screened Coulomb potential
journal, May 2003

  • Heyd, Jochen; Scuseria, Gustavo E.; Ernzerhof, Matthias
  • The Journal of Chemical Physics, Vol. 118, Issue 18
  • DOI: 10.1063/1.1564060

Native Point Defects in GaN: A Hybrid-Functional Study
journal, December 2016


Electrostatic interactions between charged defects in supercells
journal, December 2010

  • Freysoldt, Christoph; Neugebauer, Jörg; Van de Walle, Chris G.
  • physica status solidi (b), Vol. 248, Issue 5
  • DOI: 10.1002/pssb.201046289

Statistics of the Recombinations of Holes and Electrons
journal, September 1952


High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates
journal, October 2013

  • Young, N. G.; Farrell, R. M.; Hu, Y. L.
  • Applied Physics Letters, Vol. 103, Issue 17
  • DOI: 10.1063/1.4826483

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996


Fully Ab Initio Finite-Size Corrections for Charged-Defect Supercell Calculations
journal, January 2009


Vacancy-type defects in In x Ga 1– x N alloys probed using a monoenergetic positron beam
journal, July 2012

  • Uedono, A.; Ishibashi, S.; Watanabe, T.
  • Journal of Applied Physics, Vol. 112, Issue 1
  • DOI: 10.1063/1.4732141

Iron as a source of efficient Shockley-Read-Hall recombination in GaN
journal, October 2016

  • Wickramaratne, Darshana; Shen, Jimmy-Xuan; Dreyer, Cyrus E.
  • Applied Physics Letters, Vol. 109, Issue 16
  • DOI: 10.1063/1.4964831

First-principles calculations for point defects in solids
journal, March 2014

  • Freysoldt, Christoph; Grabowski, Blazej; Hickel, Tilmann
  • Reviews of Modern Physics, Vol. 86, Issue 1
  • DOI: 10.1103/RevModPhys.86.253

Study of Defect Levels in the Band Gap for a Thick InGaN Film
journal, December 2012

  • Lozac'h, Mickael; Nakano, Yoshitaka; Sang, Liwen
  • Japanese Journal of Applied Physics, Vol. 51, Issue 12R
  • DOI: 10.7567/JJAP.51.121001

Band bowing and band alignment in InGaN alloys
journal, January 2010

  • Moses, Poul Georg; Van de Walle, Chris G.
  • Applied Physics Letters, Vol. 96, Issue 2
  • DOI: 10.1063/1.3291055

Tutorial: Defects in semiconductors—Combining experiment and theory
journal, May 2016

  • Alkauskas, Audrius; McCluskey, Matthew D.; Van de Walle, Chris G.
  • Journal of Applied Physics, Vol. 119, Issue 18
  • DOI: 10.1063/1.4948245

Computationally predicted energies and properties of defects in GaN
journal, March 2017


First-principles theory of nonradiative carrier capture via multiphonon emission
journal, August 2014


Calcium as a nonradiative recombination center in InGaN
journal, January 2017

  • Shen, Jimmy-Xuan; Wickramaratne, Darshana; Dreyer, Cyrus E.
  • Applied Physics Express, Vol. 10, Issue 2
  • DOI: 10.7567/APEX.10.021001

Donor and acceptor characteristics of native point defects in GaN
journal, June 2019

  • Xie, Zijuan; Sui, Yu; Buckeridge, John
  • Journal of Physics D: Applied Physics, Vol. 52, Issue 33
  • DOI: 10.1088/1361-6463/ab2033

GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells
journal, September 2018

  • Haller, C.; Carlin, J. -F.; Jacopin, G.
  • Applied Physics Letters, Vol. 113, Issue 11
  • DOI: 10.1063/1.5048010

Luminescence properties of defects in GaN
journal, March 2005

  • Reshchikov, Michael A.; Morkoç, Hadis
  • Journal of Applied Physics, Vol. 97, Issue 6
  • DOI: 10.1063/1.1868059

First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO
journal, December 2012


Small valence-band offsets at GaN/InGaN heterojunctions
journal, May 1997

  • Van de Walle, Chris G.; Neugebauer, Jörg
  • Applied Physics Letters, Vol. 70, Issue 19
  • DOI: 10.1063/1.118924

Effects of hole localization on limiting p -type conductivity in oxide and nitride semiconductors
journal, January 2014

  • Lyons, J. L.; Janotti, A.; Van de Walle, C. G.
  • Journal of Applied Physics, Vol. 115, Issue 1
  • DOI: 10.1063/1.4838075

Ab initiomolecular dynamics for liquid metals
journal, January 1993


Nonradiative capture and recombination by multiphonon emission in GaAs and GaP
journal, January 1977


Wavelength-dependent determination of the recombination rate coefficients in single-quantum-well GaInN/GaN light emitting diodes
journal, November 2012

  • Schiavon, Dario; Binder, Michael; Peter, Matthias
  • physica status solidi (b), Vol. 250, Issue 2
  • DOI: 10.1002/pssb.201248286

Radiation-induced alloy rearrangement in In x Ga 1− x N
journal, March 2017

  • Prozheeva, V.; Makkonen, I.; Cuscó, R.
  • Applied Physics Letters, Vol. 110, Issue 13
  • DOI: 10.1063/1.4979410

Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors
journal, May 2016


First-principles theory of acceptors in nitride semiconductors: First-principles theory of acceptors in nitride semiconductors
journal, April 2015

  • Lyons, John L.; Alkauskas, Audrius; Janotti, Anderson
  • physica status solidi (b), Vol. 252, Issue 5
  • DOI: 10.1002/pssb.201552062

Electrical and optical properties of iron in GaN, AlN, and InN
journal, May 2019

  • Wickramaratne, Darshana; Shen, Jimmy-Xuan; Dreyer, Cyrus E.
  • Physical Review B, Vol. 99, Issue 20
  • DOI: 10.1103/PhysRevB.99.205202

Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN
journal, February 2011

  • Moses, Poul Georg; Miao, Maosheng; Yan, Qimin
  • The Journal of Chemical Physics, Vol. 134, Issue 8
  • DOI: 10.1063/1.3548872

Atom probe tomography of nitride semiconductors
journal, April 2018


Electron-Hole Recombination in Germanium
journal, July 1952


Contribution of deep-level defects to decreasing radiative efficiency of InGaN/GaN quantum wells with increasing emission wavelength
journal, March 2014

  • Armstrong, Andrew M.; Crawford, Mary H.; Koleske, Daniel D.
  • Applied Physics Express, Vol. 7, Issue 3
  • DOI: 10.7567/APEX.7.032101

Defect identification based on first-principles calculations for deep level transient spectroscopy
journal, November 2018

  • Wickramaratne, Darshana; Dreyer, Cyrus E.; Monserrat, Bartomeu
  • Applied Physics Letters, Vol. 113, Issue 19
  • DOI: 10.1063/1.5047808

Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters
journal, April 2016

  • Dreyer, Cyrus E.; Alkauskas, Audrius; Lyons, John L.
  • Applied Physics Letters, Vol. 108, Issue 14
  • DOI: 10.1063/1.4942674