Deep‐Level Defects and Impurities in InGaN Alloys

doi:10.1002/pssb.201900534

This content will become publicly available on November 19, 2020

Title: Deep‐Level Defects and Impurities in InGaN Alloys

Authors:

^[1]; Dreyer, Cyrus E. ^[2]; Shen, Jimmy-Xuan ^[3]; Lyons, John L. ^[4]; Alkauskas, Audrius ^[5];

^[6]

Materials DepartmentUniversity of California Santa Barbara CA 93106-5050 USA, US Naval Research LaboratoryCenter for Computational Materials Science Washington DC 20375 USA
Department of Physics and AstronomyStony Brook University Stony Brook NY 11794-3800 USA, Center for Computational Quantum PhysicsFlatiron Institute 162 5th Avenue New York NY 10010 USA
Materials DepartmentUniversity of California Santa Barbara CA 93106-5050 USA, Department of Materials Science and EngineeringUniversity of California Berkeley CA 94720-1760 USA
US Naval Research LaboratoryCenter for Computational Materials Science Washington DC 20375 USA
Center for Physical Sciences and Technology (FTMC) Vilnius LT-10257 Lithuania
Materials DepartmentUniversity of California Santa Barbara CA 93106-5050 USA

Publication Date:: 2019-11-20

Sponsoring Org.:: USDOE

OSTI Identifier:: 1575092

Grant/Contract Number:: SC0010689

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physica Status Solidi B. Basic Solid State Physics

Additional Journal Information:: Journal Name: Physica Status Solidi B. Basic Solid State Physics; Journal ID: ISSN 0370-1972

Publisher:: Wiley Blackwell (John Wiley & Sons)

Country of Publication:: Germany

Language:: English

Citation Formats


                    Wickramaratne, Darshana, Dreyer, Cyrus E., Shen, Jimmy-Xuan, Lyons, John L., Alkauskas, Audrius, and Van de Walle, Chris G. Deep‐Level Defects and Impurities in InGaN Alloys.  Germany: N. p., 2019. 
        Web.  doi:10.1002/pssb.201900534.

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                    Wickramaratne, Darshana, Dreyer, Cyrus E., Shen, Jimmy-Xuan, Lyons, John L., Alkauskas, Audrius, & Van de Walle, Chris G. Deep‐Level Defects and Impurities in InGaN Alloys.  Germany.  doi:10.1002/pssb.201900534.

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                    Wickramaratne, Darshana, Dreyer, Cyrus E., Shen, Jimmy-Xuan, Lyons, John L., Alkauskas, Audrius, and Van de Walle, Chris G. Wed .  
        "Deep‐Level Defects and Impurities in InGaN Alloys".  Germany.  doi:10.1002/pssb.201900534.

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@article{osti_1575092,

  title        = {Deep‐Level Defects and Impurities in InGaN Alloys},

  author       = {Wickramaratne, Darshana and Dreyer, Cyrus E. and Shen, Jimmy-Xuan and Lyons, John L. and Alkauskas, Audrius and Van de Walle, Chris G.},

  abstractNote = {},

  doi          = {10.1002/pssb.201900534},

  journal      = {Physica Status Solidi B. Basic Solid State Physics},

  number       = ,

  volume       = ,

  place        = {Germany},

  year         = {2019},

  month        = {11}

}

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Similar Records

This content will become publicly available on November 19, 2020

Title: Deep‐Level Defects and Impurities in InGaN Alloys

Citation Formats

Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors journal, July 1974

Effects of carbon on the electrical and optical properties of InN, GaN, and AlN journal, January 2014

Projector augmented-wave method journal, December 1994

Energetics of native point defects in GaN: A density-functional study journal, November 2015

Controlling the conductivity of InN journal, March 2010

Hybrid functionals based on a screened Coulomb potential journal, May 2003

Native Point Defects in GaN: A Hybrid-Functional Study journal, December 2016

Electrostatic interactions between charged defects in supercells journal, December 2010

Statistics of the Recombinations of Holes and Electrons journal, September 1952

High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates journal, October 2013

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set journal, October 1996

Fully Ab Initio Finite-Size Corrections for Charged-Defect Supercell Calculations journal, January 2009

Vacancy-type defects in In x Ga 1– x N alloys probed using a monoenergetic positron beam journal, July 2012

Iron as a source of efficient Shockley-Read-Hall recombination in GaN journal, October 2016

First-principles calculations for point defects in solids journal, March 2014

Study of Defect Levels in the Band Gap for a Thick InGaN Film journal, December 2012

Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m -plane freestanding GaN substrates journal, June 2019

Band bowing and band alignment in InGaN alloys journal, January 2010

Tutorial: Defects in semiconductors—Combining experiment and theory journal, May 2016

Computationally predicted energies and properties of defects in GaN journal, March 2017

First-principles theory of nonradiative carrier capture via multiphonon emission journal, August 2014

Calcium as a nonradiative recombination center in InGaN journal, January 2017

Donor and acceptor characteristics of native point defects in GaN journal, June 2019

GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells journal, September 2018

Luminescence properties of defects in GaN journal, March 2005

First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO journal, December 2012

Small valence-band offsets at GaN/InGaN heterojunctions journal, May 1997

Effects of hole localization on limiting p -type conductivity in oxide and nitride semiconductors journal, January 2014

Ab initiomolecular dynamics for liquid metals journal, January 1993

Nonradiative capture and recombination by multiphonon emission in GaAs and GaP journal, January 1977

Wavelength-dependent determination of the recombination rate coefficients in single-quantum-well GaInN/GaN light emitting diodes journal, November 2012

Radiation-induced alloy rearrangement in In x Ga 1− x N journal, March 2017

Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors journal, May 2016

First-principles theory of acceptors in nitride semiconductors: First-principles theory of acceptors in nitride semiconductors journal, April 2015

Electrical and optical properties of iron in GaN, AlN, and InN journal, May 2019

Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN journal, February 2011

Atom probe tomography of nitride semiconductors journal, April 2018

Electron-Hole Recombination in Germanium journal, July 1952

Contribution of deep-level defects to decreasing radiative efficiency of InGaN/GaN quantum wells with increasing emission wavelength journal, March 2014

Defect identification based on first-principles calculations for deep level transient spectroscopy journal, November 2018

Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters journal, April 2016

Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
journal, July 1974

Effects of carbon on the electrical and optical properties of InN, GaN, and AlN
journal, January 2014

Projector augmented-wave method
journal, December 1994

Energetics of native point defects in GaN: A density-functional study
journal, November 2015

Controlling the conductivity of InN
journal, March 2010

Hybrid functionals based on a screened Coulomb potential
journal, May 2003

Native Point Defects in GaN: A Hybrid-Functional Study
journal, December 2016

Electrostatic interactions between charged defects in supercells
journal, December 2010

Statistics of the Recombinations of Holes and Electrons
journal, September 1952

High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates
journal, October 2013

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996

Fully Ab Initio Finite-Size Corrections for Charged-Defect Supercell Calculations
journal, January 2009

Vacancy-type defects in In _x Ga _{1– x} N alloys probed using a monoenergetic positron beam
journal, July 2012

Iron as a source of efficient Shockley-Read-Hall recombination in GaN
journal, October 2016

First-principles calculations for point defects in solids
journal, March 2014

Study of Defect Levels in the Band Gap for a Thick InGaN Film
journal, December 2012

Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m -plane freestanding GaN substrates
journal, June 2019

Band bowing and band alignment in InGaN alloys
journal, January 2010

Tutorial: Defects in semiconductors—Combining experiment and theory
journal, May 2016

Computationally predicted energies and properties of defects in GaN
journal, March 2017

First-principles theory of nonradiative carrier capture via multiphonon emission
journal, August 2014

Calcium as a nonradiative recombination center in InGaN
journal, January 2017

Donor and acceptor characteristics of native point defects in GaN
journal, June 2019

GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells
journal, September 2018

Luminescence properties of defects in GaN
journal, March 2005

First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO
journal, December 2012

Small valence-band offsets at GaN/InGaN heterojunctions
journal, May 1997

Effects of hole localization on limiting p -type conductivity in oxide and nitride semiconductors
journal, January 2014

Ab initiomolecular dynamics for liquid metals
journal, January 1993

Nonradiative capture and recombination by multiphonon emission in GaAs and GaP
journal, January 1977

Wavelength-dependent determination of the recombination rate coefficients in single-quantum-well GaInN/GaN light emitting diodes
journal, November 2012

Radiation-induced alloy rearrangement in In _x Ga ₁₋ _x N
journal, March 2017

Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors
journal, May 2016

First-principles theory of acceptors in nitride semiconductors: First-principles theory of acceptors in nitride semiconductors
journal, April 2015

Electrical and optical properties of iron in GaN, AlN, and InN
journal, May 2019

Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN
journal, February 2011

Atom probe tomography of nitride semiconductors
journal, April 2018

Electron-Hole Recombination in Germanium
journal, July 1952

Contribution of deep-level defects to decreasing radiative efficiency of InGaN/GaN quantum wells with increasing emission wavelength
journal, March 2014

Defect identification based on first-principles calculations for deep level transient spectroscopy
journal, November 2018

Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters
journal, April 2016