Deep‐Level Defects and Impurities in InGaN Alloys
- Authors:
-
[1];
[6]
- Materials Department University of California Santa Barbara CA 93106-5050 USA, US Naval Research Laboratory Center for Computational Materials Science Washington DC 20375 USA
- Department of Physics and Astronomy Stony Brook University Stony Brook NY 11794-3800 USA, Center for Computational Quantum Physics Flatiron Institute 162 5th Avenue New York NY 10010 USA
- Materials Department University of California Santa Barbara CA 93106-5050 USA, Department of Materials Science and Engineering University of California Berkeley CA 94720-1760 USA
- US Naval Research Laboratory Center for Computational Materials Science Washington DC 20375 USA
- Center for Physical Sciences and Technology (FTMC) Vilnius LT-10257 Lithuania
- Materials Department University of California Santa Barbara CA 93106-5050 USA
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1575092
- Grant/Contract Number:
- SC0010689
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physica Status Solidi B. Basic Solid State Physics
- Additional Journal Information:
- Journal Name: Physica Status Solidi B. Basic Solid State Physics Journal Volume: 257 Journal Issue: 4; Journal ID: ISSN 0370-1972
- Publisher:
- Wiley Blackwell (John Wiley & Sons)
- Country of Publication:
- Germany
- Language:
- English
Citation Formats
Wickramaratne, Darshana, Dreyer, Cyrus E., Shen, Jimmy-Xuan, Lyons, John L., Alkauskas, Audrius, and Van de Walle, Chris G. Deep‐Level Defects and Impurities in InGaN Alloys. Germany: N. p., 2019.
Web. doi:10.1002/pssb.201900534.
Wickramaratne, Darshana, Dreyer, Cyrus E., Shen, Jimmy-Xuan, Lyons, John L., Alkauskas, Audrius, & Van de Walle, Chris G. Deep‐Level Defects and Impurities in InGaN Alloys. Germany. https://doi.org/10.1002/pssb.201900534
Wickramaratne, Darshana, Dreyer, Cyrus E., Shen, Jimmy-Xuan, Lyons, John L., Alkauskas, Audrius, and Van de Walle, Chris G. Wed .
"Deep‐Level Defects and Impurities in InGaN Alloys". Germany. https://doi.org/10.1002/pssb.201900534.
@article{osti_1575092,
title = {Deep‐Level Defects and Impurities in InGaN Alloys},
author = {Wickramaratne, Darshana and Dreyer, Cyrus E. and Shen, Jimmy-Xuan and Lyons, John L. and Alkauskas, Audrius and Van de Walle, Chris G.},
abstractNote = {},
doi = {10.1002/pssb.201900534},
journal = {Physica Status Solidi B. Basic Solid State Physics},
number = 4,
volume = 257,
place = {Germany},
year = {2019},
month = {11}
}
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1002/pssb.201900534
https://doi.org/10.1002/pssb.201900534
Other availability
Search WorldCat to find libraries that may hold this journal
Cited by: 1 work
Citation information provided by
Web of Science
Web of Science
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
journal, July 1974
- Lang, D. V.
- Journal of Applied Physics, Vol. 45, Issue 7
Effects of carbon on the electrical and optical properties of InN, GaN, and AlN
journal, January 2014
- Lyons, J. L.; Janotti, A.; Van de Walle, C. G.
- Physical Review B, Vol. 89, Issue 3
Projector augmented-wave method
journal, December 1994
- Blöchl, P. E.
- Physical Review B, Vol. 50, Issue 24, p. 17953-17979
Energetics of native point defects in GaN: A density-functional study
journal, November 2015
- Miceli, Giacomo; Pasquarello, Alfredo
- Microelectronic Engineering, Vol. 147
Controlling the conductivity of InN
journal, March 2010
- Van de Walle, C. G.; Lyons, J. L.; Janotti, A.
- physica status solidi (a), Vol. 207, Issue 5
Hybrid functionals based on a screened Coulomb potential
journal, May 2003
- Heyd, Jochen; Scuseria, Gustavo E.; Ernzerhof, Matthias
- The Journal of Chemical Physics, Vol. 118, Issue 18
Native Point Defects in GaN: A Hybrid-Functional Study
journal, December 2016
- Diallo, I. C.; Demchenko, D. O.
- Physical Review Applied, Vol. 6, Issue 6
Electrostatic interactions between charged defects in supercells
journal, December 2010
- Freysoldt, Christoph; Neugebauer, Jörg; Van de Walle, Chris G.
- physica status solidi (b), Vol. 248, Issue 5
Statistics of the Recombinations of Holes and Electrons
journal, September 1952
- Shockley, W.; Read, W. T.
- Physical Review, Vol. 87, Issue 5
High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates
journal, October 2013
- Young, N. G.; Farrell, R. M.; Hu, Y. L.
- Applied Physics Letters, Vol. 103, Issue 17
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996
- Kresse, G.; Furthmüller, J.
- Physical Review B, Vol. 54, Issue 16, p. 11169-11186
Fully Ab Initio Finite-Size Corrections for Charged-Defect Supercell Calculations
journal, January 2009
- Freysoldt, Christoph; Neugebauer, Jörg; Van de Walle, Chris G.
- Physical Review Letters, Vol. 102, Issue 1
Vacancy-type defects in In x Ga 1– x N alloys probed using a monoenergetic positron beam
journal, July 2012
- Uedono, A.; Ishibashi, S.; Watanabe, T.
- Journal of Applied Physics, Vol. 112, Issue 1
Iron as a source of efficient Shockley-Read-Hall recombination in GaN
journal, October 2016
- Wickramaratne, Darshana; Shen, Jimmy-Xuan; Dreyer, Cyrus E.
- Applied Physics Letters, Vol. 109, Issue 16
First-principles calculations for point defects in solids
journal, March 2014
- Freysoldt, Christoph; Grabowski, Blazej; Hickel, Tilmann
- Reviews of Modern Physics, Vol. 86, Issue 1
Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m -plane freestanding GaN substrates
journal, June 2019
- Tang, Fengzai; Zhu, Tongtong; Fu, Wai-Yuan
- Journal of Applied Physics, Vol. 125, Issue 22
Band bowing and band alignment in InGaN alloys
journal, January 2010
- Moses, Poul Georg; Van de Walle, Chris G.
- Applied Physics Letters, Vol. 96, Issue 2
Tutorial: Defects in semiconductors—Combining experiment and theory
journal, May 2016
- Alkauskas, Audrius; McCluskey, Matthew D.; Van de Walle, Chris G.
- Journal of Applied Physics, Vol. 119, Issue 18
Computationally predicted energies and properties of defects in GaN
journal, March 2017
- Lyons, John L.; Van de Walle, Chris G.
- npj Computational Materials, Vol. 3, Issue 1
First-principles theory of nonradiative carrier capture via multiphonon emission
journal, August 2014
- Alkauskas, Audrius; Yan, Qimin; Van de Walle, Chris G.
- Physical Review B, Vol. 90, Issue 7
Calcium as a nonradiative recombination center in InGaN
journal, January 2017
- Shen, Jimmy-Xuan; Wickramaratne, Darshana; Dreyer, Cyrus E.
- Applied Physics Express, Vol. 10, Issue 2
Donor and acceptor characteristics of native point defects in GaN
journal, June 2019
- Xie, Zijuan; Sui, Yu; Buckeridge, John
- Journal of Physics D: Applied Physics, Vol. 52, Issue 33
GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells
journal, September 2018
- Haller, C.; Carlin, J. -F.; Jacopin, G.
- Applied Physics Letters, Vol. 113, Issue 11
Luminescence properties of defects in GaN
journal, March 2005
- Reshchikov, Michael A.; Morkoç, Hadis
- Journal of Applied Physics, Vol. 97, Issue 6
First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO
journal, December 2012
- Alkauskas, Audrius; Lyons, John L.; Steiauf, Daniel
- Physical Review Letters, Vol. 109, Issue 26
Small valence-band offsets at GaN/InGaN heterojunctions
journal, May 1997
- Van de Walle, Chris G.; Neugebauer, Jörg
- Applied Physics Letters, Vol. 70, Issue 19
Effects of hole localization on limiting p -type conductivity in oxide and nitride semiconductors
journal, January 2014
- Lyons, J. L.; Janotti, A.; Van de Walle, C. G.
- Journal of Applied Physics, Vol. 115, Issue 1
Ab initiomolecular dynamics for liquid metals
journal, January 1993
- Kresse, G.; Hafner, J.
- Physical Review B, Vol. 47, Issue 1, p. 558-561
Nonradiative capture and recombination by multiphonon emission in GaAs and GaP
journal, January 1977
- Henry, C. H.; Lang, D. V.
- Physical Review B, Vol. 15, Issue 2
Wavelength-dependent determination of the recombination rate coefficients in single-quantum-well GaInN/GaN light emitting diodes
journal, November 2012
- Schiavon, Dario; Binder, Michael; Peter, Matthias
- physica status solidi (b), Vol. 250, Issue 2
Radiation-induced alloy rearrangement in In x Ga 1− x N
journal, March 2017
- Prozheeva, V.; Makkonen, I.; Cuscó, R.
- Applied Physics Letters, Vol. 110, Issue 13
Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors
journal, May 2016
- Alkauskas, Audrius; Dreyer, Cyrus E.; Lyons, John L.
- Physical Review B, Vol. 93, Issue 20
First-principles theory of acceptors in nitride semiconductors: First-principles theory of acceptors in nitride semiconductors
journal, April 2015
- Lyons, John L.; Alkauskas, Audrius; Janotti, Anderson
- physica status solidi (b), Vol. 252, Issue 5
Electrical and optical properties of iron in GaN, AlN, and InN
journal, May 2019
- Wickramaratne, Darshana; Shen, Jimmy-Xuan; Dreyer, Cyrus E.
- Physical Review B, Vol. 99, Issue 20
Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN
journal, February 2011
- Moses, Poul Georg; Miao, Maosheng; Yan, Qimin
- The Journal of Chemical Physics, Vol. 134, Issue 8
Atom probe tomography of nitride semiconductors
journal, April 2018
- Rigutti, L.; Bonef, B.; Speck, J.
- Scripta Materialia, Vol. 148
Electron-Hole Recombination in Germanium
journal, July 1952
- Hall, R. N.
- Physical Review, Vol. 87, Issue 2
Contribution of deep-level defects to decreasing radiative efficiency of InGaN/GaN quantum wells with increasing emission wavelength
journal, March 2014
- Armstrong, Andrew M.; Crawford, Mary H.; Koleske, Daniel D.
- Applied Physics Express, Vol. 7, Issue 3
Study of Defect Levels in the Band Gap for a Thick InGaN Film
journal, November 2012
- Lozac'h, Mickael; Nakano, Yoshitaka; Sang, Liwen
- Japanese Journal of Applied Physics, Vol. 51
Defect identification based on first-principles calculations for deep level transient spectroscopy
journal, November 2018
- Wickramaratne, Darshana; Dreyer, Cyrus E.; Monserrat, Bartomeu
- Applied Physics Letters, Vol. 113, Issue 19
Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters
journal, April 2016
- Dreyer, Cyrus E.; Alkauskas, Audrius; Lyons, John L.
- Applied Physics Letters, Vol. 108, Issue 14