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Title: Role of disorder and correlations in the metal-insulator transition in ultrathin SrVO 3 films

Abstract

Metallic oxide SrVO3 represents a prototype system for the study of the mechanism behind thickness-induced metal-to-insulator transition (MIT) or crossover in thin films due to its simple cubic symmetry with one electron in the 3d state in the bulk. Here we report a deviation of chemical composition and distortion of lattice structure existing in the initial 3 unit cells of SrVO3 films grown on SrTiO3 (001) from its bulk form, which shows a direct correlation to the thicknessdependent MIT. In-situ photoemission and scanning tunneling spectroscopy indicate a MIT at the critical thickness of ~3 unit cell (u.c.), which coincides with the formation of a (√2x√2)R45° surface reconstruction. However, atomically resolved scanning transmission electron microscopy and electron energy loss spectroscopy show depletion of Sr, change of V valence, thus implying the existence of a significant amount of oxygen vacancies in the 3 u.c. of SrVO3 near the interface. Transport and magneto-transport measurements further reveal that disorder, rather than electron correlations, is likely to be the main cause for the MIT in the SrVO3 ultrathin films.

Authors:
 [1];  [2];  [1];  [1];  [1];  [1];  [1]; ORCiD logo [3];  [1];  [1]
  1. Louisiana State Univ., Baton Rouge, LA (United States)
  2. Louisiana State Univ., Baton Rouge, LA (United States); Brookhaven National Lab. (BNL), Upton, NY (United States)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1574921
Alternate Identifier(s):
OSTI ID: 1573474
Report Number(s):
BNL-212350-2019-JAAM; BNL-212302-2019-JAAM
Journal ID: ISSN 2469-9950; PRBMDO; TRN: US2100052
Grant/Contract Number:  
SC0012704
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 100; Journal Issue: 15; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Wang, Gaomin, Wang, Zhen, Meng, Meng, Saghayezhian, Mohammad, Chen, Lina, Chen, Chen, Guo, Hangwen, Zhu, Yimei, Plummer, E. W., and Zhang, Jiandi. Role of disorder and correlations in the metal-insulator transition in ultrathin SrVO3 films. United States: N. p., 2019. Web. doi:10.1103/PhysRevB.100.155114.
Wang, Gaomin, Wang, Zhen, Meng, Meng, Saghayezhian, Mohammad, Chen, Lina, Chen, Chen, Guo, Hangwen, Zhu, Yimei, Plummer, E. W., & Zhang, Jiandi. Role of disorder and correlations in the metal-insulator transition in ultrathin SrVO3 films. United States. doi:https://doi.org/10.1103/PhysRevB.100.155114
Wang, Gaomin, Wang, Zhen, Meng, Meng, Saghayezhian, Mohammad, Chen, Lina, Chen, Chen, Guo, Hangwen, Zhu, Yimei, Plummer, E. W., and Zhang, Jiandi. Mon . "Role of disorder and correlations in the metal-insulator transition in ultrathin SrVO3 films". United States. doi:https://doi.org/10.1103/PhysRevB.100.155114. https://www.osti.gov/servlets/purl/1574921.
@article{osti_1574921,
title = {Role of disorder and correlations in the metal-insulator transition in ultrathin SrVO3 films},
author = {Wang, Gaomin and Wang, Zhen and Meng, Meng and Saghayezhian, Mohammad and Chen, Lina and Chen, Chen and Guo, Hangwen and Zhu, Yimei and Plummer, E. W. and Zhang, Jiandi},
abstractNote = {Metallic oxide SrVO3 represents a prototype system for the study of the mechanism behind thickness-induced metal-to-insulator transition (MIT) or crossover in thin films due to its simple cubic symmetry with one electron in the 3d state in the bulk. Here we report a deviation of chemical composition and distortion of lattice structure existing in the initial 3 unit cells of SrVO3 films grown on SrTiO3 (001) from its bulk form, which shows a direct correlation to the thicknessdependent MIT. In-situ photoemission and scanning tunneling spectroscopy indicate a MIT at the critical thickness of ~3 unit cell (u.c.), which coincides with the formation of a (√2x√2)R45° surface reconstruction. However, atomically resolved scanning transmission electron microscopy and electron energy loss spectroscopy show depletion of Sr, change of V valence, thus implying the existence of a significant amount of oxygen vacancies in the 3 u.c. of SrVO3 near the interface. Transport and magneto-transport measurements further reveal that disorder, rather than electron correlations, is likely to be the main cause for the MIT in the SrVO3 ultrathin films.},
doi = {10.1103/PhysRevB.100.155114},
journal = {Physical Review B},
number = 15,
volume = 100,
place = {United States},
year = {2019},
month = {10}
}

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