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Title: Synthesis and emerging properties of 2D layered III–VI metal chalcogenides

Authors:
 [1];  [2];  [1];  [1]; ORCiD logo [1]; ORCiD logo [1]
  1. Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
  2. Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA, Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1574517
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Reviews
Additional Journal Information:
Journal Name: Applied Physics Reviews Journal Volume: 6 Journal Issue: 4; Journal ID: ISSN 1931-9401
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Cai, Hui, Gu, Yiyi, Lin, Yu-Chuan, Yu, Yiling, Geohegan, David B., and Xiao, Kai. Synthesis and emerging properties of 2D layered III–VI metal chalcogenides. United States: N. p., 2019. Web. doi:10.1063/1.5123487.
Cai, Hui, Gu, Yiyi, Lin, Yu-Chuan, Yu, Yiling, Geohegan, David B., & Xiao, Kai. Synthesis and emerging properties of 2D layered III–VI metal chalcogenides. United States. doi:10.1063/1.5123487.
Cai, Hui, Gu, Yiyi, Lin, Yu-Chuan, Yu, Yiling, Geohegan, David B., and Xiao, Kai. Sun . "Synthesis and emerging properties of 2D layered III–VI metal chalcogenides". United States. doi:10.1063/1.5123487.
@article{osti_1574517,
title = {Synthesis and emerging properties of 2D layered III–VI metal chalcogenides},
author = {Cai, Hui and Gu, Yiyi and Lin, Yu-Chuan and Yu, Yiling and Geohegan, David B. and Xiao, Kai},
abstractNote = {},
doi = {10.1063/1.5123487},
journal = {Applied Physics Reviews},
number = 4,
volume = 6,
place = {United States},
year = {2019},
month = {12}
}

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Works referenced in this record:

InSe monolayer: synthesis, structure and ultra-high second-harmonic generation
journal, March 2018


Fluorescence lifetime imaging microscopy and polar-plot analysis of gallium selenide crystals
journal, January 2014

  • Zahner, S.; Kador, L.; Allakhverdiev, K. R.
  • Journal of Applied Physics, Vol. 115, Issue 4
  • DOI: 10.1063/1.4862852

Epitaxial growth and characterization of GaSxSe1−x layered compound semiconductor by molecular beam epitaxy
journal, June 1997


Near-Field Coupled Integrable Two-Dimensional InSe Photosensor on Optical Fiber
journal, November 2018


Tunable Magnetism and Half-Metallicity in Hole-Doped Monolayer GaSe
journal, June 2015


2D-GaS as a Photocatalyst for Water Splitting to Produce H 2
journal, July 2015


The Study of the Third Order Nonlinear Susceptibility in GaSe
journal, November 1982


Flexible quantum spin Hall insulator in O-functionalized GaSe monolayer
journal, June 2019


Rapid Characterization of Ultrathin Layers of Chalcogenides on SiO2/Si Substrates
journal, February 2012

  • Late, Dattatray J.; Liu, Bin; Matte, H. S. S. Ramakrishna
  • Advanced Functional Materials, Vol. 22, Issue 9
  • DOI: 10.1002/adfm.201102913

Second harmonic generation in layered compounds
journal, January 1978


Self-Driven Photodetector and Ambipolar Transistor in Atomically Thin GaTe-MoS 2 p–n vdW Heterostructure
journal, January 2016

  • Yang, Shengxue; Wang, Cong; Ataca, Can
  • ACS Applied Materials & Interfaces, Vol. 8, Issue 4
  • DOI: 10.1021/acsami.5b10001

Data Mining for New Two- and One-Dimensional Weakly Bonded Solids and Lattice-Commensurate Heterostructures
journal, February 2017


Highly Responsive Ultrathin GaS Nanosheet Photodetectors on Rigid and Flexible Substrates
journal, March 2013

  • Hu, PingAn; Wang, Lifeng; Yoon, Mina
  • Nano Letters, Vol. 13, Issue 4
  • DOI: 10.1021/nl400107k

Liquid Exfoliation of Defect-Free Graphene
journal, March 2012

  • Coleman, Jonathan N.
  • Accounts of Chemical Research, Vol. 46, Issue 1
  • DOI: 10.1021/ar300009f

Optical second-harmonic generation in lossy media: Application to GaSe and InSe
journal, June 1994


Electron-hole liquid in layered InSe: Comparison of two- and three-dimensional excitonic states
journal, June 1986


Molecular Scaffold Growth of Two-Dimensional, Strong Interlayer-Bonding-Layered Materials
journal, April 2019


Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement
journal, August 2013

  • Mudd, Garry W.; Svatek, Simon A.; Ren, Tianhang
  • Advanced Materials, Vol. 25, Issue 40
  • DOI: 10.1002/adma.201302616

Theoretical Design of an InSe/GaTe vdW Heterobilayer: A Potential Visible-Light Photocatalyst for Water Splitting
journal, November 2018

  • Fan, Yingcai; Ma, Xikui; Liu, Xiaobiao
  • The Journal of Physical Chemistry C, Vol. 122, Issue 49
  • DOI: 10.1021/acs.jpcc.8b07692

Medium infrared tunable down conversion of a YAG-pumped infrared dye laser in gallium selenide
journal, April 1979


Investigation of Exciton-Plasma Mott Transition in Si
journal, June 1977


Probing Local Strain at MX 2 –Metal Boundaries with Surface Plasmon-Enhanced Raman Scattering
journal, August 2014

  • Sun, Yinghui; Liu, Kai; Hong, Xiaoping
  • Nano Letters, Vol. 14, Issue 9
  • DOI: 10.1021/nl5023767

Doped GaSe crystals for laser frequency conversion
journal, December 2015

  • Guo, Jin; Xie, Ji-Jiang; Li, Dian-Jun
  • Light: Science & Applications, Vol. 4, Issue 12
  • DOI: 10.1038/lsa.2015.135

Synthesis, properties and applications of 2D layered M III X VI (M = Ga, In; X = S, Se, Te) materials
journal, January 2016


Optical second harmonic generation in encapsulated single-layer InSe
journal, October 2018

  • Leisgang, Nadine; Roch, Jonas G.; Froehlicher, Guillaume
  • AIP Advances, Vol. 8, Issue 10
  • DOI: 10.1063/1.5052417

2D materials and van der Waals heterostructures
journal, July 2016


Synthesis of Novel Thin-Film Materials by Pulsed Laser Deposition
journal, August 1996


Design Rules for Donors in Bulk-Heterojunction Solar Cells—Towards 10 % Energy-Conversion Efficiency
journal, March 2006

  • Scharber, M. C.; Mühlbacher, D.; Koppe, M.
  • Advanced Materials, Vol. 18, Issue 6, p. 789-794
  • DOI: 10.1002/adma.200501717

Graphene-Like Two-Dimensional Materials
journal, January 2013

  • Xu, Mingsheng; Liang, Tao; Shi, Minmin
  • Chemical Reviews, Vol. 113, Issue 5, p. 3766-3798
  • DOI: 10.1021/cr300263a

Atomically Thin MoS2 A New Direct-Gap Semiconductor
journal, September 2010


Band alignment of two-dimensional metal monochalcogenides MXs (M=Ga,In; X=S,Se,Te)
journal, September 2017

  • Sun, Huazheng; Wang, Zhan; Wang, Yong
  • AIP Advances, Vol. 7, Issue 9
  • DOI: 10.1063/1.4986385

Size-induced effects in gallium selenide electronic structure: The influence of interlayer interactions
journal, August 2011


Synthesis of Large-Area InSe Monolayers by Chemical Vapor Deposition
journal, August 2018


Efficient, tunable, and coherent 018–527-THz source based on GaSe crystal
journal, January 2002

  • Shi, Wei; Ding, Yujie J.; Fernelius, Nils
  • Optics Letters, Vol. 27, Issue 16
  • DOI: 10.1364/OL.27.001454

Wafer-scale two-dimensional semiconductors from printed oxide skin of liquid metals
journal, February 2017

  • Carey, Benjamin J.; Ou, Jian Zhen; Clark, Rhiannon M.
  • Nature Communications, Vol. 8, Issue 1
  • DOI: 10.1038/ncomms14482

Phase‐Engineered Synthesis of Ultrathin Hexagonal and Monoclinic GaTe Flakes and Phase Transition Study
journal, April 2019

  • Yu, Yiwei; Ran, Meng; Zhou, Shasha
  • Advanced Functional Materials, Vol. 29, Issue 23
  • DOI: 10.1002/adfm.201901012

Edge-Controlled Growth and Etching of Two-Dimensional GaSe Monolayers
journal, December 2016

  • Li, Xufan; Dong, Jichen; Idrobo, Juan C.
  • Journal of the American Chemical Society, Vol. 139, Issue 1
  • DOI: 10.1021/jacs.6b11076

Structural and electronic properties of monolayer group III monochalcogenides
journal, March 2017


Two-Dimensional Nonlayered CuInSe 2 Nanosheets for High-Performance Photodetectors
journal, August 2018


Intrinsic Electron Mobility Exceeding 10 3 cm 2 /(V s) in Multilayer InSe FETs
journal, May 2015


Role of Ga Vacancy on a Multilayer GaTe Phototransistor
journal, April 2014

  • Wang, Zhenxing; Xu, Kai; Li, Yuanchang
  • ACS Nano, Vol. 8, Issue 5
  • DOI: 10.1021/nn500782n

Synthesis of two-dimensional β-Ga 2 O 3 nanosheets for high-performance solar blind photodetectors
journal, January 2014

  • Feng, Wei; Wang, Xiaona; Zhang, Jia
  • J. Mater. Chem. C, Vol. 2, Issue 17
  • DOI: 10.1039/C3TC31899K

Catalogue of topological electronic materials
journal, February 2019


History and current status of commercial pulsed laser deposition equipment
journal, December 2013


Photoluminescence and Photocurrents of GaS 1– x Se x Nanobelts
journal, August 2016


Phase-Engineering-Driven Enhanced Electronic and Optoelectronic Performance of Multilayer In 2 Se 3 Nanosheets
journal, July 2018

  • Feng, Wei; Gao, Feng; Hu, Yunxia
  • ACS Applied Materials & Interfaces, Vol. 10, Issue 33
  • DOI: 10.1021/acsami.8b10194

Spin-orbit coupling, optical transitions, and spin pumping in monolayer and few-layer InSe
journal, November 2017


Observing the interplay between surface and bulk optical nonlinearities in thin van der Waals crystals
journal, March 2016

  • Deckoff-Jones, Skylar; Zhang, Jingjing; Petoukhoff, Christopher E.
  • Scientific Reports, Vol. 6, Issue 1
  • DOI: 10.1038/srep22620

2D layered group IIIA metal chalcogenides: synthesis, properties and applications in electronics and optoelectronics
journal, January 2016

  • Huang, Wenjuan; Gan, Lin; Li, Huiqiao
  • CrystEngComm, Vol. 18, Issue 22
  • DOI: 10.1039/C5CE01986A

High-Quality Black Phosphorus Atomic Layers by Liquid-Phase Exfoliation
journal, February 2015

  • Yasaei, Poya; Kumar, Bijandra; Foroozan, Tara
  • Advanced Materials, Vol. 27, Issue 11
  • DOI: 10.1002/adma.201405150

Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates
journal, March 2017

  • Lee, Choong Hee; Krishnamoorthy, Sriram; O'Hara, Dante J.
  • Journal of Applied Physics, Vol. 121, Issue 9
  • DOI: 10.1063/1.4977697

Thermodynamic Oxidation and Reduction Potentials of Photocatalytic Semiconductors in Aqueous Solution
journal, September 2012

  • Chen, Shiyou; Wang, Lin-Wang
  • Chemistry of Materials, Vol. 24, Issue 18
  • DOI: 10.1021/cm302533s

Thickness-dependent transition of the valence band shape from parabolic to Mexican-hat-like in the MBE grown InSe ultrathin films
journal, May 2018

  • Kibirev, I. A.; Matetskiy, A. V.; Zotov, A. V.
  • Applied Physics Letters, Vol. 112, Issue 19
  • DOI: 10.1063/1.5027023

Effect of pressure on structural properties and energy band gaps of γ-InSe
journal, February 2003

  • Olguín, D.; Cantarero, A.; Ulrich, C.
  • physica status solidi (b), Vol. 235, Issue 2
  • DOI: 10.1002/pssb.200301602

The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals
journal, December 2016

  • Mudd, G. W.; Molas, M. R.; Chen, X.
  • Scientific Reports, Vol. 6, Issue 1
  • DOI: 10.1038/srep39619

Electric Field Effect in Atomically Thin Carbon Films
journal, October 2004


Atomic Layer Deposition of Gallium Sulfide Films Using Hexakis(dimethylamido)digallium and Hydrogen Sulfide
journal, December 2013

  • Meng, Xiangbo; Libera, Joseph A.; Fister, Timothy T.
  • Chemistry of Materials, Vol. 26, Issue 2
  • DOI: 10.1021/cm4031057

Atomic Layer GaSe/MoS 2 van der Waals Heterostructure Photodiodes with Low Noise and Large Dynamic Range
journal, December 2017


Liquid-Phase Exfoliated Indium-Selenide Flakes and Their Application in Hydrogen Evolution Reaction
journal, May 2018


Structural and optical properties of InSe under pressure
journal, February 1992


Single-photon emitters in GaSe
journal, February 2017


Comprehensive search for topological materials using symmetry indicators
journal, February 2019


Low-temperature Region of the In–Se System
journal, January 1997

  • Tedenac, Prof. J. -C.; Vassilev, Dr. G. P.; Daouchi, B.
  • Crystal Research and Technology, Vol. 32, Issue 4
  • DOI: 10.1002/crat.2170320417

Electron–hole liquid in a van der Waals heterostructure photocell at room temperature
journal, February 2019


Excitonic resonant second harmonic in GaSe
journal, March 1989


Chemical Processes Involved in Atomic Layer Deposition of Gallium Sulfide: Insights from Theory
journal, March 2017


Electrons and phonons in single layers of hexagonal indium chalcogenides from ab initio calculations
journal, May 2014


Van der Waals Epitaxial Growth of Two-Dimensional Single-Crystalline GaSe Domains on Graphene
journal, July 2015


Observation of an Electron-Hole Liquid in Cubic SiC
journal, January 1978


GaS-GaSe-GaTe phase diagram
journal, November 2008


Solution-Based Processing of Monodisperse Two-Dimensional Nanomaterials
journal, February 2017


Band structure and optical transitions in atomic layers of hexagonal gallium chalcogenides
journal, May 2013


Large-grain MBE-grown GaSe on GaAs with a Mexican hat-like valence band dispersion
journal, January 2018

  • Chen, Ming-Wei; Kim, HoKwon; Ovchinnikov, Dmitry
  • npj 2D Materials and Applications, Vol. 2, Issue 1
  • DOI: 10.1038/s41699-017-0047-x

Electrically Switchable Chiral Light-Emitting Transistor
journal, April 2014


Hole-Doped 2D InSe for Spintronic Applications
journal, November 2018

  • Iordanidou, K.; Houssa, M.; Kioseoglou, J.
  • ACS Applied Nano Materials, Vol. 1, Issue 12
  • DOI: 10.1021/acsanm.8b01476

Calculated carrier mobility of h-BN/ γ -InSe/h-BN van der Waals heterostructures
journal, September 2017


Solid-State Reaction Synthesis of a InSe/CuInSe 2 Lateral p–n Heterojunction and Application in High Performance Optoelectronic Devices
journal, January 2015

  • Feng, Wei; Zheng, Wei; Chen, XiaoShuang
  • Chemistry of Materials, Vol. 27, Issue 3
  • DOI: 10.1021/cm504268j

Topological Phase Transition in Layered GaS and GaSe
journal, June 2012


Tightly bound trions in monolayer MoS2
journal, December 2012

  • Mak, Kin Fai; He, Keliang; Lee, Changgu
  • Nature Materials, Vol. 12, Issue 3
  • DOI: 10.1038/nmat3505

Layer-Dependent Nonlinear Optical Properties and Stability of Non-Centrosymmetric Modification in Few-Layer GaSe Sheets
journal, December 2014

  • Jie, Wenjing; Chen, Xi; Li, Dian
  • Angewandte Chemie International Edition, Vol. 54, Issue 4
  • DOI: 10.1002/anie.201409837

Effect of pressure on the structural properties and electronic band structure of GaSe
journal, January 2007

  • Schwarz, U.; Olguin, D.; Cantarero, A.
  • physica status solidi (b), Vol. 244, Issue 1
  • DOI: 10.1002/pssb.200672551

High-Mobility InSe Transistors: The Role of Surface Oxides
journal, July 2017


Two-Dimensional Non-Layered Materials: Synthesis, Properties and Applications
journal, November 2016

  • Wang, Feng; Wang, Zhenxing; Shifa, Tofik Ahmed
  • Advanced Functional Materials, Vol. 27, Issue 19
  • DOI: 10.1002/adfm.201603254

Single-Layer Group-III Monochalcogenide Photocatalysts for Water Splitting
journal, July 2013

  • Zhuang, Houlong L.; Hennig, Richard G.
  • Chemistry of Materials, Vol. 25, Issue 15
  • DOI: 10.1021/cm401661x

III–VI Chalcogenide Semiconductor Crystals for Broadband Tunable THz Sources and Sensors
journal, January 2008

  • Mandal, Krishna C.; Kang, Sung Hoon; Choi, Michael
  • IEEE Journal of Selected Topics in Quantum Electronics, Vol. 14, Issue 2
  • DOI: 10.1109/JSTQE.2007.912767

Synthesis and Photoresponse of Large GaSe Atomic Layers
journal, May 2013

  • Lei, Sidong; Ge, Liehui; Liu, Zheng
  • Nano Letters, Vol. 13, Issue 6
  • DOI: 10.1021/nl4010089

Synthesis of WS 2 x Se 2–2 x Alloy Nanosheets with Composition-Tunable Electronic Properties
journal, December 2015


Graphene-Based Liquid Crystal Device
journal, June 2008

  • Blake, Peter; Brimicombe, Paul D.; Nair, Rahul R.
  • Nano Letters, Vol. 8, Issue 6
  • DOI: 10.1021/nl080649i

Colloquium : Zoo of quantum-topological phases of matter
journal, December 2017


Resonant excitonic optical Stark effect in GaSe
journal, November 1989

  • Hirlimann, C.; Morhange, J. F.; Kanehisa, M. A.
  • Applied Physics Letters, Vol. 55, Issue 22
  • DOI: 10.1063/1.102046

Towards Solutions of Single-Walled Carbon Nanotubes in Common Solvents
journal, May 2008

  • Bergin, Shane D.; Nicolosi, Valeria; Streich, Philip V.
  • Advanced Materials, Vol. 20, Issue 10
  • DOI: 10.1002/adma.200702451

Strong Second-Harmonic Generation in Atomic Layered GaSe
journal, June 2015

  • Zhou, Xu; Cheng, Jingxin; Zhou, Yubing
  • Journal of the American Chemical Society, Vol. 137, Issue 25
  • DOI: 10.1021/jacs.5b04305

Single-layer MoS2 transistors
journal, January 2011

  • Radisavljevic, B.; Radenovic, A.; Brivio, J.
  • Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150
  • DOI: 10.1038/nnano.2010.279

Strong optical nonlinearities in gallium and indium selenides related to inter-valence-band transitions induced by light pulses
journal, August 1997


High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe
journal, November 2016

  • Bandurin, Denis A.; Tyurnina, Anastasia V.; Yu, Geliang L.
  • Nature Nanotechnology, Vol. 12, Issue 3
  • DOI: 10.1038/nnano.2016.242

Pulsed Laser Deposition of Photoresponsive Two-Dimensional GaSe Nanosheet Networks
journal, August 2014

  • Mahjouri-Samani, Masoud; Gresback, Ryan; Tian, Mengkun
  • Advanced Functional Materials, Vol. 24, Issue 40, p. 6365-6371
  • DOI: 10.1002/adfm.201401440

Preparation of Gallium Sulfide Nanosheets by Liquid Exfoliation and Their Application As Hydrogen Evolution Catalysts
journal, April 2015


Synthesis of 2D Metal Chalcogenide Thin Films through the Process Involving Solution‐Phase Deposition
journal, April 2018

  • Giri, Anupam; Park, Gyeongbae; Yang, Heeseung
  • Advanced Materials, Vol. 30, Issue 25
  • DOI: 10.1002/adma.201707577

Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors
journal, June 2012

  • Hu, PingAn; Wen, Zhenzhong; Wang, Lifeng
  • ACS Nano, Vol. 6, Issue 7
  • DOI: 10.1021/nn300889c

Liquid Exfoliation of Layered Materials
journal, June 2013

  • Nicolosi, V.; Chhowalla, M.; Kanatzidis, M. G.
  • Science, Vol. 340, Issue 6139, p. 1226419
  • DOI: 10.1126/science.1226419

Liquid-Phase Exfoliation of Graphene: An Overview on Exfoliation Media, Techniques, and Challenges
journal, November 2018

  • Xu, Yanyan; Cao, Huizhe; Xue, Yanqin
  • Nanomaterials, Vol. 8, Issue 11
  • DOI: 10.3390/nano8110942

Topological insulators and superconductors
journal, October 2011


A transparent solar cell based on a mechanically exfoliated GaTe and InGaZnO p–n heterojunction
journal, January 2017

  • Cho, Ah-Jin; Park, Kyung; Park, Solah
  • Journal of Materials Chemistry C, Vol. 5, Issue 17
  • DOI: 10.1039/C7TC00275K

Phase Identification and Strong Second Harmonic Generation in Pure ε-InSe and Its Alloys
journal, March 2019


High Broad-Band Photoresponsivity of Mechanically Formed InSe-Graphene van der Waals Heterostructures
journal, May 2015

  • Mudd, Garry W.; Svatek, Simon A.; Hague, Lee
  • Advanced Materials, Vol. 27, Issue 25
  • DOI: 10.1002/adma.201500889

Comparative study of structural and electronic properties of GaSe and InSe polytypes
journal, August 2018

  • Srour, Juliana; Badawi, Michael; El Haj Hassan, Fouad
  • The Journal of Chemical Physics, Vol. 149, Issue 5
  • DOI: 10.1063/1.5030539

Thickness-induced structural phase transformation of layered gallium telluride
journal, January 2016

  • Zhao, Q.; Wang, T.; Miao, Y.
  • Physical Chemistry Chemical Physics, Vol. 18, Issue 28
  • DOI: 10.1039/C6CP01963C

Transformation of 2D group-III selenides to ultra-thin nitrides: enabling epitaxy on amorphous substrates
journal, September 2018


X-ray photoemission analysis of chemically treated GaTe semiconductor surfaces for radiation detector applications
journal, July 2009

  • Nelson, A. J.; Conway, A. M.; Sturm, B. W.
  • Journal of Applied Physics, Vol. 106, Issue 2
  • DOI: 10.1063/1.3176478

Abnormal band bowing effects in phase instability crossover region of GaSe1-xTe x nanomaterials
journal, May 2018


Strain-Induced Spatial and Spectral Isolation of Quantum Emitters in Mono- and Bilayer WSe 2
journal, October 2015


Ultrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband response
journal, January 2015

  • Feng, Wei; Wu, Jing-Bin; Li, Xiaoli
  • Journal of Materials Chemistry C, Vol. 3, Issue 27
  • DOI: 10.1039/C5TC01208B

Controllable Growth of Vertical Heterostructure GaTe x Se 1– x /Si by Molecular Beam Epitaxy
journal, July 2015


Indirect to Direct Gap Crossover in Two-Dimensional InSe Revealed by Angle-Resolved Photoemission Spectroscopy
journal, January 2019


2D lateral heterostructures of group-III monochalcogenide: Potential photovoltaic applications
journal, April 2018

  • Cheng, Kai; Guo, Yu; Han, Nannan
  • Applied Physics Letters, Vol. 112, Issue 14
  • DOI: 10.1063/1.5020618

Two-dimensional materials with piezoelectric and ferroelectric functionalities
journal, June 2018


High efficiency middle IR parametric superradiance in ZnGeP2 and GaSe crystals pumped by an erbium laser
journal, June 1991


Quantum confined acceptors and donors in InSe nanosheets
journal, December 2014

  • Mudd, G. W.; Patanè, A.; Kudrynskyi, Z. R.
  • Applied Physics Letters, Vol. 105, Issue 22
  • DOI: 10.1063/1.4903738

Molecular-Beam Epitaxy of Two-Dimensional In 2 Se 3 and Its Giant Electroresistance Switching in Ferroresistive Memory Junction
journal, September 2018


Large-scale quantum-emitter arrays in atomically thin semiconductors
journal, May 2017

  • Palacios-Berraquero, Carmen; Kara, Dhiren M.; Montblanch, Alejandro R. -P.
  • Nature Communications, Vol. 8, Issue 1
  • DOI: 10.1038/ncomms15093

Abrupt current switching in graphene bilayer tunnel transistors enabled by van Hove singularities
journal, April 2016

  • Alymov, Georgy; Vyurkov, Vladimir; Ryzhii, Victor
  • Scientific Reports, Vol. 6, Issue 1
  • DOI: 10.1038/srep24654

Structure–Property Relationship of Low-Dimensional Layered GaSe x Te 1– x Alloys
journal, June 2018


Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy
journal, December 2016


Accessing the transport properties of graphene and its multilayers at high carrier density
journal, July 2011

  • Ye, Jianting; Craciun, Monica F.; Koshino, Mikito
  • Proceedings of the National Academy of Sciences, Vol. 108, Issue 32
  • DOI: 10.1073/pnas.1018388108

Atomic Layer Deposition Chemistry Recent Developments and Future Challenges
journal, November 2003

  • Leskelä, Markku; Ritala, Mikko
  • Angewandte Chemie International Edition, Vol. 42, Issue 45, p. 5548-5554
  • DOI: 10.1002/anie.200301652

Oxygen-Free Atomic Layer Deposition of Indium Sulfide
journal, July 2014

  • McCarthy, Robert F.; Weimer, Matthew S.; Emery, Jonathan D.
  • ACS Applied Materials & Interfaces, Vol. 6, Issue 15
  • DOI: 10.1021/am501331w

Topological field theory of time-reversal invariant insulators
journal, November 2008

  • Qi, Xiao-Liang; Hughes, Taylor L.; Zhang, Shou-Cheng
  • Physical Review B, Vol. 78, Issue 19, Article No. 195424
  • DOI: 10.1103/PhysRevB.78.195424

Optical Properties and Photocatalytic Applications of Two-Dimensional Janus Group-III Monochalcogenides
journal, April 2019

  • Huang, Aijian; Shi, Wenwu; Wang, Zhiguo
  • The Journal of Physical Chemistry C, Vol. 123, Issue 18
  • DOI: 10.1021/acs.jpcc.8b12450

Single photon emitters in exfoliated WSe2 structures
journal, May 2015

  • Koperski, M.; Nogajewski, K.; Arora, A.
  • Nature Nanotechnology, Vol. 10, Issue 6
  • DOI: 10.1038/nnano.2015.67

Two-dimensional GaSe/MoSe 2 misfit bilayer heterojunctions by van der Waals epitaxy
journal, April 2016


Angular properties of second-harmonic polarization due to high-order nonlinearities: Application to GaSe and InSe
journal, October 1990


Infrared-to-violet tunable optical activity in atomic films of GaSe, InSe, and their heterostructures
journal, September 2018


Observation of Electron-Hole Liquid in GaP
journal, May 1977


Electronic structure and properties of layered gallium telluride
journal, May 2016


Controlling Electron-Phonon Interactions in Graphene at Ultrahigh Carrier Densities
journal, December 2010


Controlled Growth of Atomically Thin In 2 Se 3 Flakes by van der Waals Epitaxy
journal, August 2013

  • Lin, Min; Wu, Di; Zhou, Yu
  • Journal of the American Chemical Society, Vol. 135, Issue 36
  • DOI: 10.1021/ja406351u

Solvent Exfoliation of Transition Metal Dichalcogenides: Dispersibility of Exfoliated Nanosheets Varies Only Weakly between Compounds
journal, March 2012

  • Cunningham, Graeme; Lotya, Mustafa; Cucinotta, Clotilde S.
  • ACS Nano, Vol. 6, Issue 4
  • DOI: 10.1021/nn300503e

Growth and characterization of III–VI layered crystals like GaSe, GaTe, InSe, GaSe1-xTex and GaxIn1-xSe
journal, January 1982


Solution-Processed Two-Dimensional Ultrathin InSe Nanosheets
journal, February 2016


Suppressing Ambient Degradation of Exfoliated InSe Nanosheet Devices via Seeded Atomic Layer Deposition Encapsulation
journal, November 2018


Recent Progress in 2D Layered III–VI Semiconductors and their Heterostructures for Optoelectronic Device Applications
journal, May 2019


Two-dimensional crystals-based heterostructures: materials with tailored properties
journal, January 2012


High Performance and Bendable Few-Layered InSe Photodetectors with Broad Spectral Response
journal, April 2014

  • Tamalampudi, Srinivasa Reddy; Lu, Yi-Ying; Kumar U., Rajesh
  • Nano Letters, Vol. 14, Issue 5
  • DOI: 10.1021/nl500817g

Large-Scale Exfoliation of Inorganic Layered Compounds in Aqueous Surfactant Solutions
journal, July 2011

  • Smith, Ronan J.; King, Paul J.; Lotya, Mustafa
  • Advanced Materials, Vol. 23, Issue 34
  • DOI: 10.1002/adma.201102584

Properties of gallium selenide single crystal
journal, January 1994


Metal Chalcogenides Janus Monolayers for Efficient Hydrogen Generation by Photocatalytic Water Splitting
journal, January 2019

  • da Silva, Rafael; Barbosa, Rafael; Mançano, Rosana Rabelo
  • ACS Applied Nano Materials, Vol. 2, Issue 2
  • DOI: 10.1021/acsanm.8b02135

Revealing the Preferred Interlayer Orientations and Stackings of Two-Dimensional Bilayer Gallium Selenide Crystals
journal, January 2015

  • Li, Xufan; Basile, Leonardo; Yoon, Mina
  • Angewandte Chemie International Edition, Vol. 54, Issue 9
  • DOI: 10.1002/anie.201409743

Tunable GaTe-MoS 2 van der Waals p–n Junctions with Novel Optoelectronic Performance
journal, October 2015


van der Waals Epitaxy of GaSe/Graphene Heterostructure: Electronic and Interfacial Properties
journal, October 2016


Quantum emission from hexagonal boron nitride monolayers
journal, October 2015

  • Tran, Toan Trong; Bray, Kerem; Ford, Michael J.
  • Nature Nanotechnology, Vol. 11, Issue 1
  • DOI: 10.1038/nnano.2015.242

In-Plane Optical Anisotropy of Layered Gallium Telluride
journal, August 2016


Controlled Vapor Phase Growth of Single Crystalline, Two-Dimensional GaSe Crystals with High Photoresponse
journal, June 2014

  • Li, Xufan; Lin, Ming-Wei; Puretzky, Alexander A.
  • Scientific Reports, Vol. 4, Issue 1
  • DOI: 10.1038/srep05497

Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials
journal, April 2017

  • Ding, Wenjun; Zhu, Jianbao; Wang, Zhe
  • Nature Communications, Vol. 8, Issue 1
  • DOI: 10.1038/ncomms14956

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
journal, November 2012

  • Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras
  • Nature Nanotechnology, Vol. 7, Issue 11, p. 699-712
  • DOI: 10.1038/nnano.2012.193

4–12 μm tunable down-conversion in GaSe from a LiNbO3 parametric oscillator
journal, May 1978


A complete catalogue of high-quality topological materials
journal, February 2019


Theory of Superconductivity
journal, December 1957


Colloquium: Topological insulators
journal, November 2010


Digital Transfer Growth of Patterned 2D Metal Chalcogenides by Confined Nanoparticle Evaporation
journal, October 2014

  • Mahjouri-Samani, Masoud; Tian, Mengkun; Wang, Kai
  • ACS Nano, Vol. 8, Issue 11, p. 11567-11575
  • DOI: 10.1021/nn5048124

Pulsed-laser deposition of InSe thin films for the detection of thickness-dependent bandgap modification
journal, December 2018

  • Zheng, Dingheng; Shiogai, Junichi; Fujiwara, Kohei
  • Applied Physics Letters, Vol. 113, Issue 25
  • DOI: 10.1063/1.5064736

Two-dimensional few-layer group-III metal monochalcogenides as effective photocatalysts for overall water splitting in the visible range
journal, January 2018

  • Cui, Yu; Peng, Lei; Sun, Liping
  • Journal of Materials Chemistry A, Vol. 6, Issue 45
  • DOI: 10.1039/C8TA08103D

Gate Controlled Photocurrent Generation Mechanisms in High-Gain In 2 Se 3 Phototransistors
journal, November 2015


Crystal structure and interatomic distances in GaSe
journal, October 1975


Multiferroic Two-Dimensional Materials
journal, May 2016


Solution-Processed Layered Gallium Telluride Thin-Film Photodetectors
journal, September 2018


Solid-state reaction synthesis of two-dimensional CuGaSe 2 nanosheets for high performance photodetectors
journal, January 2014

  • Feng, Wei; Zheng, Wei; Hu, PingAn
  • Physical Chemistry Chemical Physics, Vol. 16, Issue 36
  • DOI: 10.1039/C4CP02736A

Electronic and thermoelectric properties of van der Waals materials with ring-shaped valence bands
journal, August 2015

  • Wickramaratne, Darshana; Zahid, Ferdows; Lake, Roger K.
  • Journal of Applied Physics, Vol. 118, Issue 7
  • DOI: 10.1063/1.4928559

Self-Organized Growth of Two-Dimensional GaTe Nanosheet on ZnO Nanowires for Heterojunctional Water Splitting Applications
journal, May 2017

  • Li, Qiuguo; Ma, Xinzhou; Liu, Huiqiang
  • ACS Applied Materials & Interfaces, Vol. 9, Issue 22
  • DOI: 10.1021/acsami.7b04199

Monolayer group-III monochalcogenides by oxygen functionalization: a promising class of two-dimensional topological insulators
journal, March 2018


Atomic Layer Deposition: An Overview
journal, January 2010

  • George, Steven M.
  • Chemical Reviews, Vol. 110, Issue 1, p. 111-131
  • DOI: 10.1021/cr900056b

Modulation of opto-electronic properties of InSe thin layers via phase transformation
journal, January 2016

  • Osman, Makkawi; Huang, Yanmin; Feng, Wei
  • RSC Advances, Vol. 6, Issue 74
  • DOI: 10.1039/C6RA13543A

GaSe crystals for broadband terahertz wave detection
journal, August 2004

  • Liu, Kai; Xu, Jingzhou; Zhang, X. -C.
  • Applied Physics Letters, Vol. 85, Issue 6
  • DOI: 10.1063/1.1779959

High-yield production of graphene by liquid-phase exfoliation of graphite
journal, August 2008

  • Hernandez, Yenny; Nicolosi, Valeria; Lotya, Mustafa
  • Nature Nanotechnology, Vol. 3, Issue 9, p. 563-568
  • DOI: 10.1038/nnano.2008.215

Preparation and Applications of Mechanically Exfoliated Single-Layer and Multilayer MoS2 and WSe2 Nanosheets
journal, February 2014

  • Li, Hai; Wu, Jumiati; Yin, Zongyou
  • Accounts of Chemical Research, Vol. 47, Issue 4, p. 1067-1075
  • DOI: 10.1021/ar4002312

Phase-Engineered Growth of Ultrathin InSe Flakes by Chemical Vapor Deposition for High-Efficiency Second Harmonic Generation
journal, September 2018

  • Huang, Wenjuan; Gan, Lin; Li, Huiqiao
  • Chemistry - A European Journal, Vol. 24, Issue 58
  • DOI: 10.1002/chem.201803634

High-performance flexible photodetectors based on GaTe nanosheets
journal, January 2015

  • Wang, Zhenxing; Safdar, Muhammad; Mirza, Misbah
  • Nanoscale, Vol. 7, Issue 16
  • DOI: 10.1039/C4NR07313D

Wafer-Scale Synthesis of High-Quality Semiconducting Two-Dimensional Layered InSe with Broadband Photoresponse
journal, March 2017


Polytype phase transition in the series GaSe1−xSx
journal, January 1982

  • Terhell, J. C. J. M.; Brabers, V. A. M.; van Egmond, G. E.
  • Journal of Solid State Chemistry, Vol. 41, Issue 1
  • DOI: 10.1016/0022-4596(82)90039-1

Sensitive Electronic-Skin Strain Sensor Array Based on the Patterned Two-Dimensional α-In 2 Se 3
journal, May 2016


GaS and GaSe Ultrathin Layer Transistors
journal, June 2012


Formation of a High T c Electron-Hole Liquid in Diamond
journal, January 2002


Synthesis and Defect Investigation of Two-Dimensional Molybdenum Disulfide Atomic Layers
journal, December 2014

  • Najmaei, Sina; Yuan, Jiangtan; Zhang, Jing
  • Accounts of Chemical Research, Vol. 48, Issue 1
  • DOI: 10.1021/ar500291j

Valence band inversion and spin-orbit effects in the electronic structure of monolayer GaSe
journal, September 2018


Epitaxy and Photoresponse of Two-Dimensional GaSe Crystals on Flexible Transparent Mica Sheets
journal, January 2014

  • Zhou, Yubing; Nie, Yufeng; Liu, Yujing
  • ACS Nano, Vol. 8, Issue 2
  • DOI: 10.1021/nn405529r

Thickness dependence of second-harmonic generation in thin films fabricated from ionically self-assembled monolayers
journal, January 1999

  • Heflin, J. R.; Figura, C.; Marciu, D.
  • Applied Physics Letters, Vol. 74, Issue 4
  • DOI: 10.1063/1.123166

Observation of long-lived interlayer excitons in monolayer MoSe2–WSe2 heterostructures
journal, February 2015

  • Rivera, Pasqual; Schaibley, John R.; Jones, Aaron M.
  • Nature Communications, Vol. 6, Issue 1
  • DOI: 10.1038/ncomms7242