Response of Waveguide-Integrated Germanium-on-Silicon p-i-n Photodiodes to Neutron Displacement Damage

Goley, Patrick S.; Dodds, Nathaniel A.; Frounchi, Milad; Tzintzarov, George N.; Nowlin, R. Nathan; Cressler, John D.

doi:10.1109/TNS.2019.2949584

Title: Response of Waveguide-Integrated Germanium-on-Silicon p-i-n Photodiodes to Neutron Displacement Damage

Abstract

The effects of 14-MeV neutron displacement damage (DD) on waveguide-integrated germanium-on-silicon p-i-n photodiodes (PDs) for silicon photonics have been investigated up to fluences of 7.5×1012 n/cm2 (14 MeV), or 1.4×1013 n1-MeVeq/cm2(Si). The study includes measurements of dark current-voltage characteristics across temperature from 150-375 K, measurements of PD junction capacitance, spectral response measurements from 1260 nm to 1360 nm, and frequency response measurements. The devices are found to be susceptible to DD-induced carrier removal effects; however, they also continue to operate without meaningful impact to performance for the DD dose levels examined. Since the PD test chips include silicon photonic integrated grating couplers and waveguides which carry the optical signal to the PD, some assessment of the impact of DD on these passive devices can also be inferred. Finally, this work does not examine the short-term annealing or transient behavior of the DD, and instead has only considered the lasting damage that remains after any initial period of room temperature annealing.

Authors:

Goley, Patrick S. ^[1]; Dodds, Nathaniel A. ^[2]; Frounchi, Milad ^[3]; Tzintzarov, George N. ^[1]; Nowlin, R. Nathan ^[2]; Cressler, John D. ^[1]

Georgia Inst. of Technology, Atlanta, GA (United States). School of Electrical and Computer Engineering
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Georgia Inst. of Technology, Atlanta, GA (United States)

Publication Date:: 2019-10-25

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1574489

Report Number(s):: SAND-201912427J
Journal ID: ISSN 0018-9499; 680564; TRN: US2001201

Grant/Contract Number:: AC04-94AL85000; NA0003525

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Transactions on Nuclear Science

Additional Journal Information:: Journal Volume: 67; Journal Issue: 1; Journal ID: ISSN 0018-9499

Publisher:: IEEE

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING; radiation effects; optoelectronic devices; photodiodes; neutron radiation; displacement damage; integrated photonics

Citation Formats


                    Goley, Patrick S., Dodds, Nathaniel A., Frounchi, Milad, Tzintzarov, George N., Nowlin, R. Nathan, and Cressler, John D. Response of Waveguide-Integrated Germanium-on-Silicon p-i-n Photodiodes to Neutron Displacement Damage.  United States: N. p., 2019. 
Web.  doi:10.1109/TNS.2019.2949584.

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                    Goley, Patrick S., Dodds, Nathaniel A., Frounchi, Milad, Tzintzarov, George N., Nowlin, R. Nathan, & Cressler, John D. Response of Waveguide-Integrated Germanium-on-Silicon p-i-n Photodiodes to Neutron Displacement Damage.  United States.  https://doi.org/10.1109/TNS.2019.2949584

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                    Goley, Patrick S., Dodds, Nathaniel A., Frounchi, Milad, Tzintzarov, George N., Nowlin, R. Nathan, and Cressler, John D. Fri .  
"Response of Waveguide-Integrated Germanium-on-Silicon p-i-n Photodiodes to Neutron Displacement Damage".  United States.  https://doi.org/10.1109/TNS.2019.2949584.  https://www.osti.gov/servlets/purl/1574489.

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@article{osti_1574489,

  title        = {Response of Waveguide-Integrated Germanium-on-Silicon p-i-n Photodiodes to Neutron Displacement Damage},

  author       = {Goley, Patrick S. and Dodds, Nathaniel A. and Frounchi, Milad and Tzintzarov, George N. and Nowlin, R. Nathan and Cressler, John D.},

  abstractNote = {The effects of 14-MeV neutron displacement damage (DD) on waveguide-integrated germanium-on-silicon p-i-n photodiodes (PDs) for silicon photonics have been investigated up to fluences of 7.5×1012 n/cm2 (14 MeV), or 1.4×1013 n1-MeVeq/cm2(Si). The study includes measurements of dark current-voltage characteristics across temperature from 150-375 K, measurements of PD junction capacitance, spectral response measurements from 1260 nm to 1360 nm, and frequency response measurements. The devices are found to be susceptible to DD-induced carrier removal effects; however, they also continue to operate without meaningful impact to performance for the DD dose levels examined. Since the PD test chips include silicon photonic integrated grating couplers and waveguides which carry the optical signal to the PD, some assessment of the impact of DD on these passive devices can also be inferred. Finally, this work does not examine the short-term annealing or transient behavior of the DD, and instead has only considered the lasting damage that remains after any initial period of room temperature annealing.},

  doi          = {10.1109/TNS.2019.2949584},

  journal      = {IEEE Transactions on Nuclear Science},

  number       = 1,

  volume       = 67,

  place        = {United States},

  year         = {2019},

  month        = {10}

}

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Fig. 1: A diagram of the main device under investigation. The optical input signal is fed in via an edge-coupled Si photonic waveguide.

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