DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Response of Waveguide-Integrated Germanium-on-Silicon p-i-n Photodiodes to Neutron Displacement Damage

Journal Article · · IEEE Transactions on Nuclear Science
 [1];  [2];  [3];  [1];  [2];  [1]
  1. Georgia Inst. of Technology, Atlanta, GA (United States). School of Electrical and Computer Engineering
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  3. Georgia Inst. of Technology, Atlanta, GA (United States)

The effects of 14-MeV neutron displacement damage (DD) on waveguide-integrated germanium-on-silicon p-i-n photodiodes (PDs) for silicon photonics have been investigated up to fluences of 7.5×1012 n/cm2 (14 MeV), or 1.4×1013 n1-MeVeq/cm2(Si). The study includes measurements of dark current-voltage characteristics across temperature from 150-375 K, measurements of PD junction capacitance, spectral response measurements from 1260 nm to 1360 nm, and frequency response measurements. The devices are found to be susceptible to DD-induced carrier removal effects; however, they also continue to operate without meaningful impact to performance for the DD dose levels examined. Since the PD test chips include silicon photonic integrated grating couplers and waveguides which carry the optical signal to the PD, some assessment of the impact of DD on these passive devices can also be inferred. Finally, this work does not examine the short-term annealing or transient behavior of the DD, and instead has only considered the lasting damage that remains after any initial period of room temperature annealing.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000; NA0003525
OSTI ID:
1574489
Report Number(s):
SAND-201912427J; 680564; TRN: US2001201
Journal Information:
IEEE Transactions on Nuclear Science, Vol. 67, Issue 1; ISSN 0018-9499
Publisher:
IEEECopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 6 works
Citation information provided by
Web of Science

Figures / Tables (13)