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Title: Low-Power Absorption Saturation in Semiconductor Metasurfaces

Abstract

Saturable optical elements lie at the cornerstone of many modern optical systems. Regularly patterned quasi-planar nanostructures—metasurfaces—are known to facilitate nonlinear optical processes. Such subwavelength semiconductor nanostructures can potentially serve as saturable components. In this work, we report on the intensity-dependent reflectance of femtosecond laser pulses from semiconductor metasurfaces with Mie-type modes, caused by the absorption saturation. Moreover, arrays of GaAs nanocylinders with magnetic dipole resonances in the spectral vicinity of the GaAs bandgap demonstrate a reduced saturation intensity and increased self-modulation efficiency, an order of magnitude higher than bulk GaAs or unstructured GaAs films. By contrast, the reflection modulation is shown to be negligible in the CW regime for the same average intensities, indicating that the process is not the result of temperature effects. Our work provides a novel idea for low-power saturable elements based on nonthermal nature of saturation. We conclude by devising a high-quality metasurface that can be used, in theory, to further reduce the saturation fluence below 50 nJ/cm 2.

Authors:
ORCiD logo [1]; ORCiD logo [2];  [3];  [1];  [4]; ORCiD logo [5];  [5];  [1]; ORCiD logo [6]; ORCiD logo [5]; ORCiD logo [1]
  1. Lomonosov Moscow State Univ., Moscow (Russia)
  2. Lomonosov Moscow State Univ., Moscow (Russia); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  3. Lomonosov Moscow State Univ., Moscow (Russia); Cornell Univ., Ithaca, NY (United States)
  4. Lomonosov Moscow State Univ., Moscow (Russia); Friedrich Schiller Univ., Jena (Germany)
  5. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  6. Friedrich Schiller Univ., Jena (Germany)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
OSTI Identifier:
1574481
Report Number(s):
SAND-2019-13096J
Journal ID: ISSN 2330-4022; 680819
Grant/Contract Number:  
AC04-94AL85000; NA-0003525
Resource Type:
Accepted Manuscript
Journal Name:
ACS Photonics
Additional Journal Information:
Journal Volume: 6; Journal Issue: 11; Journal ID: ISSN 2330-4022
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; absorption saturation; semiconductor metasurfaces; Mie-type resonance; I-scan

Citation Formats

Zubyuk, Varvara V., Vabishchevich, Polina P., Shcherbakov, Maxim R., Shorokhov, Alexander S., Fedotova, Anna N., Liu, Sheng, Keeler, Gordon, Dolgova, Tatyana V., Staude, Isabelle, Brener, Igal, and Fedyanin, Andrey A. Low-Power Absorption Saturation in Semiconductor Metasurfaces. United States: N. p., 2019. Web. doi:10.1021/acsphotonics.9b00842.
Zubyuk, Varvara V., Vabishchevich, Polina P., Shcherbakov, Maxim R., Shorokhov, Alexander S., Fedotova, Anna N., Liu, Sheng, Keeler, Gordon, Dolgova, Tatyana V., Staude, Isabelle, Brener, Igal, & Fedyanin, Andrey A. Low-Power Absorption Saturation in Semiconductor Metasurfaces. United States. doi:10.1021/acsphotonics.9b00842.
Zubyuk, Varvara V., Vabishchevich, Polina P., Shcherbakov, Maxim R., Shorokhov, Alexander S., Fedotova, Anna N., Liu, Sheng, Keeler, Gordon, Dolgova, Tatyana V., Staude, Isabelle, Brener, Igal, and Fedyanin, Andrey A. Fri . "Low-Power Absorption Saturation in Semiconductor Metasurfaces". United States. doi:10.1021/acsphotonics.9b00842.
@article{osti_1574481,
title = {Low-Power Absorption Saturation in Semiconductor Metasurfaces},
author = {Zubyuk, Varvara V. and Vabishchevich, Polina P. and Shcherbakov, Maxim R. and Shorokhov, Alexander S. and Fedotova, Anna N. and Liu, Sheng and Keeler, Gordon and Dolgova, Tatyana V. and Staude, Isabelle and Brener, Igal and Fedyanin, Andrey A.},
abstractNote = {Saturable optical elements lie at the cornerstone of many modern optical systems. Regularly patterned quasi-planar nanostructures—metasurfaces—are known to facilitate nonlinear optical processes. Such subwavelength semiconductor nanostructures can potentially serve as saturable components. In this work, we report on the intensity-dependent reflectance of femtosecond laser pulses from semiconductor metasurfaces with Mie-type modes, caused by the absorption saturation. Moreover, arrays of GaAs nanocylinders with magnetic dipole resonances in the spectral vicinity of the GaAs bandgap demonstrate a reduced saturation intensity and increased self-modulation efficiency, an order of magnitude higher than bulk GaAs or unstructured GaAs films. By contrast, the reflection modulation is shown to be negligible in the CW regime for the same average intensities, indicating that the process is not the result of temperature effects. Our work provides a novel idea for low-power saturable elements based on nonthermal nature of saturation. We conclude by devising a high-quality metasurface that can be used, in theory, to further reduce the saturation fluence below 50 nJ/cm2.},
doi = {10.1021/acsphotonics.9b00842},
journal = {ACS Photonics},
number = 11,
volume = 6,
place = {United States},
year = {2019},
month = {10}
}

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This content will become publicly available on October 4, 2020
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