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Title: Alignment of morphology during high spatial frequency periodic structure formation in GaAs

Abstract

The interaction among multiple intense ultrashort laser pulses and solids is known to provide a regular nanoscale surface corrugation. A coupled mechanism has been identified that operates in a specific range of fluences in GaAs that exhibits transient loss of the imaginary part of the dielectric function and Χ 2, which produces a unique corrugation known as high spatial frequency laser induced periodic surface structures (HSFL). The final structures have 180 nm periods, and their alignment perpendicular to the laser polarization is first observed in an intermediate morphology with correlation distances of 150±40 nm. Quantum molecular dynamics simulations suggest that HSFL self-assembly is initiated when the intense laser field softens the interatomic binding potential, which leads to an ultrafast generation of point defects. The morphological evolution begins as self-interstitial diffusion, driven by stress relaxation, to the surface producing 1–2 nm tall islands. An ab initio calculation of excited electron concentration combined with a Drude-Lorentz model of the excited GaAs dielectric function is used to determine that the conditions for SPP coupling at HSFL formation fluences are both satisfied and occur at wavelengths that are imprinted into the observed surface morphologies. The evolution of these morphologies is reported on as themore » interplay between surface plasmon polaritons that localize defect generation within the structures present on the previous laser exposure and stress relaxation driven defect diffusion.« less

Authors:
 [1];  [2]; ORCiD logo [2]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Univ. of Michigan, Ann Arbor, MI (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); US Air Force Office of Scientific Research (AFOSR)
OSTI Identifier:
1574451
Alternate Identifier(s):
OSTI ID: 1574808
Report Number(s):
SAND-2019-12081J; SAND2019-6560J
Journal ID: ISSN 0021-8979; 680135
Grant/Contract Number:  
AC04-94AL85000; NA0003525
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 126; Journal Issue: 14; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Abere, Michael J., Yalisove, Steven M., and Torralva, Ben. Alignment of morphology during high spatial frequency periodic structure formation in GaAs. United States: N. p., 2019. Web. doi:10.1063/1.5114930.
Abere, Michael J., Yalisove, Steven M., & Torralva, Ben. Alignment of morphology during high spatial frequency periodic structure formation in GaAs. United States. doi:10.1063/1.5114930.
Abere, Michael J., Yalisove, Steven M., and Torralva, Ben. Wed . "Alignment of morphology during high spatial frequency periodic structure formation in GaAs". United States. doi:10.1063/1.5114930.
@article{osti_1574451,
title = {Alignment of morphology during high spatial frequency periodic structure formation in GaAs},
author = {Abere, Michael J. and Yalisove, Steven M. and Torralva, Ben},
abstractNote = {The interaction among multiple intense ultrashort laser pulses and solids is known to provide a regular nanoscale surface corrugation. A coupled mechanism has been identified that operates in a specific range of fluences in GaAs that exhibits transient loss of the imaginary part of the dielectric function and Χ2, which produces a unique corrugation known as high spatial frequency laser induced periodic surface structures (HSFL). The final structures have 180 nm periods, and their alignment perpendicular to the laser polarization is first observed in an intermediate morphology with correlation distances of 150±40 nm. Quantum molecular dynamics simulations suggest that HSFL self-assembly is initiated when the intense laser field softens the interatomic binding potential, which leads to an ultrafast generation of point defects. The morphological evolution begins as self-interstitial diffusion, driven by stress relaxation, to the surface producing 1–2 nm tall islands. An ab initio calculation of excited electron concentration combined with a Drude-Lorentz model of the excited GaAs dielectric function is used to determine that the conditions for SPP coupling at HSFL formation fluences are both satisfied and occur at wavelengths that are imprinted into the observed surface morphologies. The evolution of these morphologies is reported on as the interplay between surface plasmon polaritons that localize defect generation within the structures present on the previous laser exposure and stress relaxation driven defect diffusion.},
doi = {10.1063/1.5114930},
journal = {Journal of Applied Physics},
number = 14,
volume = 126,
place = {United States},
year = {2019},
month = {10}
}

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