Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy
Abstract
The effect of dry-etch-induced defects on the electrical performance of regrown, c-plane, GaN p-n diodes where the p-GaN layer is formed by epitaxial regrowth using metal-organic, chemical-vapor deposition was investigated. Diode leakage increased greatly for etched-and-regrown diodes compared to continuously grown diodes, suggesting a defect-mediated leakage mechanism. Deep level optical spectroscopy (DLOS) methods were used to identify energy levels and densities of defect states to understand etch-induced damage in regrown devices. DLOS results showed the creation of an emergent, mid-gap defect state at 1.90 eV below the conduction band edge for etched-and-regrown diodes. Reduction in both the reverse leakage and the concentration of the 1.90 eV mid-gap state was achieved using a wet chemical treatment on the etched surface before regrowth, suggesting that the 1.90 eV deep level contributes to increased leakage and premature breakdown but can be mitigated with proper post-etch treatments to achieve >600 V reverse breakdown operation.
- Authors:
-
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E); USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1574450
- Alternate Identifier(s):
- OSTI ID: 1570037
- Report Number(s):
- SAND-2019-12255J
Journal ID: ISSN 0021-8979; 680257; TRN: US2001232
- Grant/Contract Number:
- AC04-94AL85000; NA-0003525
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 126; Journal Issue: 14; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Pickrell, G. W., Armstrong, A. M., Allerman, A. A., Crawford, M. H., Glaser, C. E., Kempisty, J., and Abate, V. M. Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy. United States: N. p., 2019.
Web. doi:10.1063/1.5110521.
Pickrell, G. W., Armstrong, A. M., Allerman, A. A., Crawford, M. H., Glaser, C. E., Kempisty, J., & Abate, V. M. Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy. United States. doi:10.1063/1.5110521.
Pickrell, G. W., Armstrong, A. M., Allerman, A. A., Crawford, M. H., Glaser, C. E., Kempisty, J., and Abate, V. M. Thu .
"Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy". United States. doi:10.1063/1.5110521. https://www.osti.gov/servlets/purl/1574450.
@article{osti_1574450,
title = {Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy},
author = {Pickrell, G. W. and Armstrong, A. M. and Allerman, A. A. and Crawford, M. H. and Glaser, C. E. and Kempisty, J. and Abate, V. M.},
abstractNote = {The effect of dry-etch-induced defects on the electrical performance of regrown, c-plane, GaN p-n diodes where the p-GaN layer is formed by epitaxial regrowth using metal-organic, chemical-vapor deposition was investigated. Diode leakage increased greatly for etched-and-regrown diodes compared to continuously grown diodes, suggesting a defect-mediated leakage mechanism. Deep level optical spectroscopy (DLOS) methods were used to identify energy levels and densities of defect states to understand etch-induced damage in regrown devices. DLOS results showed the creation of an emergent, mid-gap defect state at 1.90 eV below the conduction band edge for etched-and-regrown diodes. Reduction in both the reverse leakage and the concentration of the 1.90 eV mid-gap state was achieved using a wet chemical treatment on the etched surface before regrowth, suggesting that the 1.90 eV deep level contributes to increased leakage and premature breakdown but can be mitigated with proper post-etch treatments to achieve >600 V reverse breakdown operation.},
doi = {10.1063/1.5110521},
journal = {Journal of Applied Physics},
number = 14,
volume = 126,
place = {United States},
year = {2019},
month = {10}
}
Web of Science
Works referenced in this record:
5.0 kV breakdown-voltage vertical GaN p–n junction diodes
journal, February 2018
- Ohta, Hiroshi; Hayashi, Kentaro; Horikiri, Fumimasa
- Japanese Journal of Applied Physics, Vol. 57, Issue 4S
1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy
journal, August 2017
- Hu, Zongyang; Nomoto, Kazuki; Qi, Meng
- IEEE Electron Device Letters, Vol. 38, Issue 8
Regrown Vertical GaN p–n Diodes with Low Reverse Leakage Current
journal, March 2019
- Pickrell, G. W.; Armstrong, A. M.; Allerman, A. A.
- Journal of Electronic Materials, Vol. 48, Issue 5
Detection of Interstitial Ga in GaN
journal, September 2000
- Chow, K. H.; Watkins, G. D.; Usui, Akira
- Physical Review Letters, Vol. 85, Issue 13
Optically and thermally detected deep levels in n -type Schottky and p+-n GaN diodes
journal, May 2000
- Hierro, A.; Kwon, D.; Ringel, S. A.
- Applied Physics Letters, Vol. 76, Issue 21
Activation of Mg implanted in GaN by multicycle rapid thermal annealing
journal, January 2014
- Kub, F. J.; Eddy, C. R.; Hite, J. K.
- Electronics Letters, Vol. 50, Issue 3
Ultrafast Reverse Recovery Time Measurement for Wide-Bandgap Diodes
journal, December 2017
- Mauch, Daniel L.; Zutavern, Fred J.; Delhotal, Jarod J.
- IEEE Transactions on Power Electronics, Vol. 32, Issue 12
Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV
journal, January 2014
- Oka, Tohru; Ueno, Yukihisa; Ina, Tsutomu
- Applied Physics Express, Vol. 7, Issue 2
Vertical Power p-n Diodes Based on Bulk GaN
journal, February 2015
- Kizilyalli, Isik C.; Edwards, Andrew P.; Aktas, Ozgur
- IEEE Transactions on Electron Devices, Vol. 62, Issue 2
Deep-level optical spectroscopy in GaAs
journal, May 1981
- Chantre, A.; Vincent, G.; Bois, D.
- Physical Review B, Vol. 23, Issue 10
Photoionization cross-section analysis for a deep trap contributing to current collapse in GaN field-effect transistors
journal, July 2004
- Pässler, Roland
- Journal of Applied Physics, Vol. 96, Issue 1
Hydrogen passivation of deep levels in n–GaN
journal, September 2000
- Hierro, A.; Ringel, S. A.; Hansen, M.
- Applied Physics Letters, Vol. 77, Issue 10
High voltage and high current density vertical GaN power diodes
journal, June 2016
- Fischer, A. J.; Dickerson, J. R.; Armstrong, A. M.
- Electronics Letters, Vol. 52, Issue 13
Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial and heteroepitaxial n-GaN
journal, December 2017
- Collins, K. C.; Armstrong, A. M.; Allerman, A. A.
- Journal of Applied Physics, Vol. 122, Issue 23
CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion
journal, January 2012
- Chowdhury, Srabanti; Wong, Man Hoi; Swenson, Brian L.
- IEEE Electron Device Letters, Vol. 33, Issue 1
Mechanism of Yellow Luminescence in GaN
journal, December 1980
- Ogino, Toshio; Aoki, Masaharu
- Japanese Journal of Applied Physics, Vol. 19, Issue 12
(Invited) Achieving Vertical Trench-Gate GaN MOSFETs via Process Optimization
journal, August 2017
- Shahin, David I.; Anderson, Travis J.; Christou, Aristos
- ECS Transactions, Vol. 80, Issue 7
Trench formation and corner rounding in vertical GaN power devices
journal, May 2017
- Zhang, Yuhao; Sun, Min; Liu, Zhihong
- Applied Physics Letters, Vol. 110, Issue 19
Works referencing / citing this record:
Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN
journal, February 2020
- Xiao, Ming; Du, Zhonghao; Xie, Jinqiao
- Applied Physics Letters, Vol. 116, Issue 5