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Title: Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy

Abstract

The effect of dry-etch-induced defects on the electrical performance of regrown, c-plane, GaN p-n diodes where the p-GaN layer is formed by epitaxial regrowth using metal-organic, chemical-vapor deposition was investigated. Diode leakage increased greatly for etched-and-regrown diodes compared to continuously grown diodes, suggesting a defect-mediated leakage mechanism. Deep level optical spectroscopy (DLOS) methods were used to identify energy levels and densities of defect states to understand etch-induced damage in regrown devices. DLOS results showed the creation of an emergent, mid-gap defect state at 1.90 eV below the conduction band edge for etched-and-regrown diodes. Reduction in both the reverse leakage and the concentration of the 1.90 eV mid-gap state was achieved using a wet chemical treatment on the etched surface before regrowth, suggesting that the 1.90 eV deep level contributes to increased leakage and premature breakdown but can be mitigated with proper post-etch treatments to achieve >600 V reverse breakdown operation.

Authors:
ORCiD logo [1]; ORCiD logo [1];  [1];  [1];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E); USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1574450
Alternate Identifier(s):
OSTI ID: 1570037
Report Number(s):
SAND-2019-12255J
Journal ID: ISSN 0021-8979; 680257
Grant/Contract Number:  
AC04-94AL85000; NA-0003525
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 126; Journal Issue: 14; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Pickrell, G. W., Armstrong, A. M., Allerman, A. A., Crawford, M. H., Glaser, C. E., Kempisty, J., and Abate, V. M. Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy. United States: N. p., 2019. Web. doi:10.1063/1.5110521.
Pickrell, G. W., Armstrong, A. M., Allerman, A. A., Crawford, M. H., Glaser, C. E., Kempisty, J., & Abate, V. M. Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy. United States. doi:10.1063/1.5110521.
Pickrell, G. W., Armstrong, A. M., Allerman, A. A., Crawford, M. H., Glaser, C. E., Kempisty, J., and Abate, V. M. Thu . "Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy". United States. doi:10.1063/1.5110521.
@article{osti_1574450,
title = {Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy},
author = {Pickrell, G. W. and Armstrong, A. M. and Allerman, A. A. and Crawford, M. H. and Glaser, C. E. and Kempisty, J. and Abate, V. M.},
abstractNote = {The effect of dry-etch-induced defects on the electrical performance of regrown, c-plane, GaN p-n diodes where the p-GaN layer is formed by epitaxial regrowth using metal-organic, chemical-vapor deposition was investigated. Diode leakage increased greatly for etched-and-regrown diodes compared to continuously grown diodes, suggesting a defect-mediated leakage mechanism. Deep level optical spectroscopy (DLOS) methods were used to identify energy levels and densities of defect states to understand etch-induced damage in regrown devices. DLOS results showed the creation of an emergent, mid-gap defect state at 1.90 eV below the conduction band edge for etched-and-regrown diodes. Reduction in both the reverse leakage and the concentration of the 1.90 eV mid-gap state was achieved using a wet chemical treatment on the etched surface before regrowth, suggesting that the 1.90 eV deep level contributes to increased leakage and premature breakdown but can be mitigated with proper post-etch treatments to achieve >600 V reverse breakdown operation.},
doi = {10.1063/1.5110521},
journal = {Journal of Applied Physics},
number = 14,
volume = 126,
place = {United States},
year = {2019},
month = {10}
}

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Works referenced in this record:

5.0 kV breakdown-voltage vertical GaN p–n junction diodes
journal, February 2018

  • Ohta, Hiroshi; Hayashi, Kentaro; Horikiri, Fumimasa
  • Japanese Journal of Applied Physics, Vol. 57, Issue 4S
  • DOI: 10.7567/JJAP.57.04FG09

1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy
journal, August 2017


Regrown Vertical GaN p–n Diodes with Low Reverse Leakage Current
journal, March 2019

  • Pickrell, G. W.; Armstrong, A. M.; Allerman, A. A.
  • Journal of Electronic Materials, Vol. 48, Issue 5
  • DOI: 10.1007/s11664-019-07098-6

Detection of Interstitial Ga in GaN
journal, September 2000


Optically and thermally detected deep levels in n -type Schottky and p+-n GaN diodes
journal, May 2000

  • Hierro, A.; Kwon, D.; Ringel, S. A.
  • Applied Physics Letters, Vol. 76, Issue 21
  • DOI: 10.1063/1.126580

Activation of Mg implanted in GaN by multicycle rapid thermal annealing
journal, January 2014

  • Kub, F. J.; Eddy, C. R.; Hite, J. K.
  • Electronics Letters, Vol. 50, Issue 3
  • DOI: 10.1049/el.2013.3214

Ultrafast Reverse Recovery Time Measurement for Wide-Bandgap Diodes
journal, December 2017

  • Mauch, Daniel L.; Zutavern, Fred J.; Delhotal, Jarod J.
  • IEEE Transactions on Power Electronics, Vol. 32, Issue 12
  • DOI: 10.1109/TPEL.2017.2657491

Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV
journal, January 2014

  • Oka, Tohru; Ueno, Yukihisa; Ina, Tsutomu
  • Applied Physics Express, Vol. 7, Issue 2
  • DOI: 10.7567/APEX.7.021002

Vertical Power p-n Diodes Based on Bulk GaN
journal, February 2015

  • Kizilyalli, Isik C.; Edwards, Andrew P.; Aktas, Ozgur
  • IEEE Transactions on Electron Devices, Vol. 62, Issue 2
  • DOI: 10.1109/TED.2014.2360861

Deep-level optical spectroscopy in GaAs
journal, May 1981


Hydrogen passivation of deep levels in n–GaN
journal, September 2000

  • Hierro, A.; Ringel, S. A.; Hansen, M.
  • Applied Physics Letters, Vol. 77, Issue 10
  • DOI: 10.1063/1.1290042

High voltage and high current density vertical GaN power diodes
journal, June 2016

  • Fischer, A. J.; Dickerson, J. R.; Armstrong, A. M.
  • Electronics Letters, Vol. 52, Issue 13
  • DOI: 10.1049/el.2016.1156

Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial and heteroepitaxial n-GaN
journal, December 2017

  • Collins, K. C.; Armstrong, A. M.; Allerman, A. A.
  • Journal of Applied Physics, Vol. 122, Issue 23
  • DOI: 10.1063/1.5006814

CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion
journal, January 2012

  • Chowdhury, Srabanti; Wong, Man Hoi; Swenson, Brian L.
  • IEEE Electron Device Letters, Vol. 33, Issue 1
  • DOI: 10.1109/LED.2011.2173456

Mechanism of Yellow Luminescence in GaN
journal, December 1980

  • Ogino, Toshio; Aoki, Masaharu
  • Japanese Journal of Applied Physics, Vol. 19, Issue 12
  • DOI: 10.1143/JJAP.19.2395

(Invited) Achieving Vertical Trench-Gate GaN MOSFETs via Process Optimization
journal, August 2017

  • Shahin, David I.; Anderson, Travis J.; Christou, Aristos
  • ECS Transactions, Vol. 80, Issue 7
  • DOI: 10.1149/08007.0139ecst

Trench formation and corner rounding in vertical GaN power devices
journal, May 2017

  • Zhang, Yuhao; Sun, Min; Liu, Zhihong
  • Applied Physics Letters, Vol. 110, Issue 19
  • DOI: 10.1063/1.4983558