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Title: Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy

Abstract

The effect of dry-etch-induced defects on the electrical performance of regrown, c-plane, GaN p-n diodes where the p-GaN layer is formed by epitaxial regrowth using metal-organic, chemical-vapor deposition was investigated. Diode leakage increased greatly for etched-and-regrown diodes compared to continuously grown diodes, suggesting a defect-mediated leakage mechanism. Deep level optical spectroscopy (DLOS) methods were used to identify energy levels and densities of defect states to understand etch-induced damage in regrown devices. DLOS results showed the creation of an emergent, mid-gap defect state at 1.90 eV below the conduction band edge for etched-and-regrown diodes. Reduction in both the reverse leakage and the concentration of the 1.90 eV mid-gap state was achieved using a wet chemical treatment on the etched surface before regrowth, suggesting that the 1.90 eV deep level contributes to increased leakage and premature breakdown but can be mitigated with proper post-etch treatments to achieve >600 V reverse breakdown operation.

Authors:
ORCiD logo [1]; ORCiD logo [1];  [1];  [1];  [1];  [1];  [1]
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  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E); USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1574450
Alternate Identifier(s):
OSTI ID: 1570037
Report Number(s):
SAND-2019-12255J
Journal ID: ISSN 0021-8979; 680257; TRN: US2001232
Grant/Contract Number:  
AC04-94AL85000; NA-0003525
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 126; Journal Issue: 14; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Pickrell, G. W., Armstrong, A. M., Allerman, A. A., Crawford, M. H., Glaser, C. E., Kempisty, J., and Abate, V. M. Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy. United States: N. p., 2019. Web. doi:10.1063/1.5110521.
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Pickrell, G. W., Armstrong, A. M., Allerman, A. A., Crawford, M. H., Glaser, C. E., Kempisty, J., & Abate, V. M. Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy. United States. https://doi.org/10.1063/1.5110521
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Pickrell, G. W., Armstrong, A. M., Allerman, A. A., Crawford, M. H., Glaser, C. E., Kempisty, J., and Abate, V. M. Thu . "Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy". United States. https://doi.org/10.1063/1.5110521. https://www.osti.gov/servlets/purl/1574450.
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@article{osti_1574450,
title = {Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy},
author = {Pickrell, G. W. and Armstrong, A. M. and Allerman, A. A. and Crawford, M. H. and Glaser, C. E. and Kempisty, J. and Abate, V. M.},
abstractNote = {The effect of dry-etch-induced defects on the electrical performance of regrown, c-plane, GaN p-n diodes where the p-GaN layer is formed by epitaxial regrowth using metal-organic, chemical-vapor deposition was investigated. Diode leakage increased greatly for etched-and-regrown diodes compared to continuously grown diodes, suggesting a defect-mediated leakage mechanism. Deep level optical spectroscopy (DLOS) methods were used to identify energy levels and densities of defect states to understand etch-induced damage in regrown devices. DLOS results showed the creation of an emergent, mid-gap defect state at 1.90 eV below the conduction band edge for etched-and-regrown diodes. Reduction in both the reverse leakage and the concentration of the 1.90 eV mid-gap state was achieved using a wet chemical treatment on the etched surface before regrowth, suggesting that the 1.90 eV deep level contributes to increased leakage and premature breakdown but can be mitigated with proper post-etch treatments to achieve >600 V reverse breakdown operation.},
doi = {10.1063/1.5110521},
journal = {Journal of Applied Physics},
number = 14,
volume = 126,
place = {United States},
year = {2019},
month = {10}
}
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Journal Article:
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Publisher's Version of Record
https://doi.org/10.1063/1.5110521
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Cited by: 2 works
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Figures / Tables:

FIG. 1 FIG. 1: (a) Forward-bias current density-voltage curves, on a linear current scale, for p-n diodes that are continuously grown or have the n-drift layer dry-etched prior to regrowth of the p-GaN layer and (b) current density-voltage curves on a logarithmic current scale.
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Works referenced in this record:

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journal, December 2017

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    Works referencing / citing this record:

    Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN
    journal, February 2020

    • Xiao, Ming; Du, Zhonghao; Xie, Jinqiao
    • Applied Physics Letters, Vol. 116, Issue 5
    • DOI: 10.1063/1.5139906
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      Figures / Tables found in this record:

      FIG. 1 (p. 3)figure
      FIG. 2 (p. 4)figure
      FIG. 3 (p. 5)figure
      FIG. 4 (p. 5)figure
      TABLE I (p. 5)table
      FIG. 5 (p. 6)figure
      FIG. 6 (p. 7)figure
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