Investigations of irradiation effects in crystalline and amorphous SiC
Abstract
The results of irradiation on 3C-silicon carbide (SiC) and amorphous SiC (a-SiC) are explored using both in situ transmission electron microscopy (TEM) and complementary molecular dynamics (MD) simulations. The single ion strikes identified in the in situ TEM irradiation experiments, utilizing a 1.7 MeV Au3+ ion beam with nanosecond resolution, are contrasted to MD simulation results of the defect cascades produced by 10–100 keV Si primary knock-on atoms (PKAs). The MD simulations also investigated defect structures that could possibly be responsible for the observed strain fields produced by single ion strikes in the TEM ion beam irradiation experiments. Both MD simulations and in situ TEM experiments show evidence of radiation damage in 3C-SiC but none in a-SiC. Selected area electron diffraction patterns, due to the results of MD simulations and in situ TEM irradiation experiments, show no evidence of structural changes in either 3C-SiC or a-SiC.
- Authors:
-
[1];
[2];
[3];
[4]
- Univ. of New Mexico, Albuquerque, NM (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Univ. of New Mexico, Albuquerque, NM (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Oregon State Univ., Corvallis, OR (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF)
- OSTI Identifier:
- 1574449
- Report Number(s):
- SAND-2019-12522J
Journal ID: ISSN 0021-8979; 680418; TRN: US2001230
- Grant/Contract Number:
- AC04-94AL85000; NA-0003525; AC52-06NA25396; AC07-05ID14517
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 126; Journal Issue: 13; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; MD simulations; 3C-SiC; a-SiC; Defects Production; In situ TEM; Ion Irradiation
Citation Formats
Cowen, Benjamin J., El-Genk, Mohamed S., Hattar, Khalid, and Briggs, Samuel A. Investigations of irradiation effects in crystalline and amorphous SiC. United States: N. p., 2019.
Web. doi:10.1063/1.5085216.
Cowen, Benjamin J., El-Genk, Mohamed S., Hattar, Khalid, & Briggs, Samuel A. Investigations of irradiation effects in crystalline and amorphous SiC. United States. https://doi.org/10.1063/1.5085216
Cowen, Benjamin J., El-Genk, Mohamed S., Hattar, Khalid, and Briggs, Samuel A. Fri .
"Investigations of irradiation effects in crystalline and amorphous SiC". United States. https://doi.org/10.1063/1.5085216. https://www.osti.gov/servlets/purl/1574449.
@article{osti_1574449,
title = {Investigations of irradiation effects in crystalline and amorphous SiC},
author = {Cowen, Benjamin J. and El-Genk, Mohamed S. and Hattar, Khalid and Briggs, Samuel A.},
abstractNote = {The results of irradiation on 3C-silicon carbide (SiC) and amorphous SiC (a-SiC) are explored using both in situ transmission electron microscopy (TEM) and complementary molecular dynamics (MD) simulations. The single ion strikes identified in the in situ TEM irradiation experiments, utilizing a 1.7 MeV Au3+ ion beam with nanosecond resolution, are contrasted to MD simulation results of the defect cascades produced by 10–100 keV Si primary knock-on atoms (PKAs). The MD simulations also investigated defect structures that could possibly be responsible for the observed strain fields produced by single ion strikes in the TEM ion beam irradiation experiments. Both MD simulations and in situ TEM experiments show evidence of radiation damage in 3C-SiC but none in a-SiC. Selected area electron diffraction patterns, due to the results of MD simulations and in situ TEM irradiation experiments, show no evidence of structural changes in either 3C-SiC or a-SiC.},
doi = {10.1063/1.5085216},
journal = {Journal of Applied Physics},
number = 13,
volume = 126,
place = {United States},
year = {2019},
month = {10}
}
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