Investigations of irradiation effects in crystalline and amorphous SiC

Cowen, Benjamin J.; El-Genk, Mohamed S.; Hattar, Khalid; Briggs, Samuel A.

doi:10.1063/1.5085216

Title: Investigations of irradiation effects in crystalline and amorphous SiC

Journal Article · 04 October 2019 · Journal of Applied Physics

DOI: https://doi.org/10.1063/1.5085216 · OSTI ID:1574449

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Univ. of New Mexico, Albuquerque, NM (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Univ. of New Mexico, Albuquerque, NM (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Oregon State Univ., Corvallis, OR (United States)

The results of irradiation on 3C-silicon carbide (SiC) and amorphous SiC (a-SiC) are explored using both in situ transmission electron microscopy (TEM) and complementary molecular dynamics (MD) simulations. The single ion strikes identified in the in situ TEM irradiation experiments, utilizing a 1.7 MeV Au³⁺ ion beam with nanosecond resolution, are contrasted to MD simulation results of the defect cascades produced by 10–100 keV Si primary knock-on atoms (PKAs). The MD simulations also investigated defect structures that could possibly be responsible for the observed strain fields produced by single ion strikes in the TEM ion beam irradiation experiments. Both MD simulations and in situ TEM experiments show evidence of radiation damage in 3C-SiC but none in a-SiC. Selected area electron diffraction patterns, due to the results of MD simulations and in situ TEM irradiation experiments, show no evidence of structural changes in either 3C-SiC or a-SiC.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF)

Grant/Contract Number:: AC04-94AL85000; NA-0003525; AC52-06NA25396; AC07-05ID14517

OSTI ID:: 1574449

Report Number(s):: SAND-2019-12522J; 680418; TRN: US2001230

Journal Information:: Journal of Applied Physics, Vol. 126, Issue 13; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 8 works

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Title: Investigations of irradiation effects in crystalline and amorphous SiC

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