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Title: Investigations of irradiation effects in crystalline and amorphous SiC

Abstract

The results of irradiation on 3C-silicon carbide (SiC) and amorphous SiC (a-SiC) are explored using both in situ transmission electron microscopy (TEM) and complementary molecular dynamics (MD) simulations. The single ion strikes identified in the in situ TEM irradiation experiments, utilizing a 1.7 MeV Au 3+ ion beam with nanosecond resolution, are contrasted to MD simulation results of the defect cascades produced by 10–100 keV Si primary knock-on atoms (PKAs). The MD simulations also investigated defect structures that could possibly be responsible for the observed strain fields produced by single ion strikes in the TEM ion beam irradiation experiments. Both MD simulations and in situ TEM experiments show evidence of radiation damage in 3C-SiC but none in a-SiC. Selected area electron diffraction patterns, due to the results of MD simulations and in situ TEM irradiation experiments, show no evidence of structural changes in either 3C-SiC or a-SiC.

Authors:
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [3]; ORCiD logo [4]
+ Show Author Affiliations
  1. Univ. of New Mexico, Albuquerque, NM (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Univ. of New Mexico, Albuquerque, NM (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  4. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Oregon State Univ., Corvallis, OR (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF)
OSTI Identifier:
1574449
Report Number(s):
SAND-2019-12522J
Journal ID: ISSN 0021-8979; 680418
Grant/Contract Number:  
AC04-94AL85000; NA-0003525; AC52-06NA25396; AC07-05ID14517
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 126; Journal Issue: 13; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; MD simulations; 3C-SiC; a-SiC; Defects Production; In situ TEM; Ion Irradiation

Citation Formats

Cowen, Benjamin J., El-Genk, Mohamed S., Hattar, Khalid, and Briggs, Samuel A. Investigations of irradiation effects in crystalline and amorphous SiC. United States: N. p., 2019. Web. doi:10.1063/1.5085216.
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Cowen, Benjamin J., El-Genk, Mohamed S., Hattar, Khalid, & Briggs, Samuel A. Investigations of irradiation effects in crystalline and amorphous SiC. United States. doi:10.1063/1.5085216.
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Cowen, Benjamin J., El-Genk, Mohamed S., Hattar, Khalid, and Briggs, Samuel A. Fri . "Investigations of irradiation effects in crystalline and amorphous SiC". United States. doi:10.1063/1.5085216.
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@article{osti_1574449,
title = {Investigations of irradiation effects in crystalline and amorphous SiC},
author = {Cowen, Benjamin J. and El-Genk, Mohamed S. and Hattar, Khalid and Briggs, Samuel A.},
abstractNote = {The results of irradiation on 3C-silicon carbide (SiC) and amorphous SiC (a-SiC) are explored using both in situ transmission electron microscopy (TEM) and complementary molecular dynamics (MD) simulations. The single ion strikes identified in the in situ TEM irradiation experiments, utilizing a 1.7 MeV Au3+ ion beam with nanosecond resolution, are contrasted to MD simulation results of the defect cascades produced by 10–100 keV Si primary knock-on atoms (PKAs). The MD simulations also investigated defect structures that could possibly be responsible for the observed strain fields produced by single ion strikes in the TEM ion beam irradiation experiments. Both MD simulations and in situ TEM experiments show evidence of radiation damage in 3C-SiC but none in a-SiC. Selected area electron diffraction patterns, due to the results of MD simulations and in situ TEM irradiation experiments, show no evidence of structural changes in either 3C-SiC or a-SiC.},
doi = {10.1063/1.5085216},
journal = {Journal of Applied Physics},
number = 13,
volume = 126,
place = {United States},
year = {2019},
month = {10}
}
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DOI:  10.1063/1.5085216
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