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Title: Blue-light-emitting color centers in high-quality hexagonal boron nitride

Abstract

Light emitters in wide-band-gap semiconductors are of great fundamental interest and have potential as optically addressable qubits. Here we describe a unique color center in high-quality hexagonal boron nitride (h-BN) with a sharp emission line at 435 nm. The emitters are activated and deactivated by electron beam irradiation and have spectral and temporal characteristics consistent with atomic color centers weakly coupled to lattice vibrations. The emitters are conspicuously absent from commercially available h-BN and are present in only ultrahigh-quality h-BN grown using a high-pressure, high-temperature Ba-B-N flux/solvent, suggesting that these emitters originate from impurities or related defects specific to this unique synthetic route. Lastly, our results imply that the light emission is activated and deactivated by electron beam manipulation of the charge state of an impurity-defect complex.

Authors:
ORCiD logo [1];  [2];  [3];  [4];  [3];  [3];  [3];  [5];  [5];  [2];  [3]
  1. Univ. of California, Berkeley, CA (United States). Kavli Energy NanoScience Inst.; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Molecular Foundry
  2. Univ. of California, Berkeley, CA (United States). Kavli Energy NanoScience Inst.; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Molecular Foundry
  4. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Molecular Foundry; Technical Univ. of Munich (Germany). Walter-Schottky-Inst.
  5. National Inst. for Materials Science (NIMS), Tsukuba (Japan). Advanced Materials Lab.
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF)
OSTI Identifier:
1574342
Grant/Contract Number:  
AC02-05CH11231; DMR-1807233; 1542741
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 100; Journal Issue: 15; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Shevitski, Brian, Gilbert, S. Matt, Chen, Christopher T., Kastl, Christoph, Barnard, Edward S., Wong, Ed, Ogletree, D. Frank, Watanabe, Kenji, Taniguchi, Takashi, Zettl, Alex, and Aloni, Shaul. Blue-light-emitting color centers in high-quality hexagonal boron nitride. United States: N. p., 2019. Web. doi:10.1103/physrevb.100.155419.
Shevitski, Brian, Gilbert, S. Matt, Chen, Christopher T., Kastl, Christoph, Barnard, Edward S., Wong, Ed, Ogletree, D. Frank, Watanabe, Kenji, Taniguchi, Takashi, Zettl, Alex, & Aloni, Shaul. Blue-light-emitting color centers in high-quality hexagonal boron nitride. United States. doi:10.1103/physrevb.100.155419.
Shevitski, Brian, Gilbert, S. Matt, Chen, Christopher T., Kastl, Christoph, Barnard, Edward S., Wong, Ed, Ogletree, D. Frank, Watanabe, Kenji, Taniguchi, Takashi, Zettl, Alex, and Aloni, Shaul. Thu . "Blue-light-emitting color centers in high-quality hexagonal boron nitride". United States. doi:10.1103/physrevb.100.155419.
@article{osti_1574342,
title = {Blue-light-emitting color centers in high-quality hexagonal boron nitride},
author = {Shevitski, Brian and Gilbert, S. Matt and Chen, Christopher T. and Kastl, Christoph and Barnard, Edward S. and Wong, Ed and Ogletree, D. Frank and Watanabe, Kenji and Taniguchi, Takashi and Zettl, Alex and Aloni, Shaul},
abstractNote = {Light emitters in wide-band-gap semiconductors are of great fundamental interest and have potential as optically addressable qubits. Here we describe a unique color center in high-quality hexagonal boron nitride (h-BN) with a sharp emission line at 435 nm. The emitters are activated and deactivated by electron beam irradiation and have spectral and temporal characteristics consistent with atomic color centers weakly coupled to lattice vibrations. The emitters are conspicuously absent from commercially available h-BN and are present in only ultrahigh-quality h-BN grown using a high-pressure, high-temperature Ba-B-N flux/solvent, suggesting that these emitters originate from impurities or related defects specific to this unique synthetic route. Lastly, our results imply that the light emission is activated and deactivated by electron beam manipulation of the charge state of an impurity-defect complex.},
doi = {10.1103/physrevb.100.155419},
journal = {Physical Review B},
number = 15,
volume = 100,
place = {United States},
year = {2019},
month = {10}
}

Journal Article:
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