Topological surface states above the Fermi level in
Abstract
We report a detailed experimental study of the band structure of the recently discovered topological material Hf2Te2P. Using the combination of scanning tunneling spectroscopy and angle-resolved photoemission spectroscopy with surface K doping, we probe the band structure of Hf2Te2P with energy and momentum resolution above the Fermi level. Our experiments show the presence of multiple surface states with a linear Dirac-like dispersion, consistent with the predictions from previously reported band-structure calculations. In particular, scanning tunneling spectroscopy measurements provide experimental evidence for the strong topological surface state predicted at 460 meV, which stems from the band inversion between Hf-d and Te-p orbitals. As a result, this band inversion comprised of more localized d states could result in a better surface-to-bulk conductance ratio relative to more traditional topological insulators.
- Authors:
-
- Univ. of California, Davis, CA (United States)
- Univ. of California, Davis, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division
- OSTI Identifier:
- 1574335
- Alternate Identifier(s):
- OSTI ID: 1556824
- Grant/Contract Number:
- AC02-05CH11231; PHY-1560482
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Volume: 100; Journal Issue: 8; Journal ID: ISSN 2469-9950
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Boyle, T. J., Rossi, A., Walker, M., Carlson, P., Miller, M. K., Zhao, J., Klavins, P., Jozwiak, C., Bostwick, A., Rotenberg, E., Taufour, V., Vishik, I. M., and da Silva Neto, E. H.. Topological surface states above the Fermi level in Hf2Te2P. United States: N. p., 2019.
Web. doi:10.1103/physrevb.100.081105.
Boyle, T. J., Rossi, A., Walker, M., Carlson, P., Miller, M. K., Zhao, J., Klavins, P., Jozwiak, C., Bostwick, A., Rotenberg, E., Taufour, V., Vishik, I. M., & da Silva Neto, E. H.. Topological surface states above the Fermi level in Hf2Te2P. United States. https://doi.org/10.1103/physrevb.100.081105
Boyle, T. J., Rossi, A., Walker, M., Carlson, P., Miller, M. K., Zhao, J., Klavins, P., Jozwiak, C., Bostwick, A., Rotenberg, E., Taufour, V., Vishik, I. M., and da Silva Neto, E. H.. Mon .
"Topological surface states above the Fermi level in Hf2Te2P". United States. https://doi.org/10.1103/physrevb.100.081105. https://www.osti.gov/servlets/purl/1574335.
@article{osti_1574335,
title = {Topological surface states above the Fermi level in Hf2Te2P},
author = {Boyle, T. J. and Rossi, A. and Walker, M. and Carlson, P. and Miller, M. K. and Zhao, J. and Klavins, P. and Jozwiak, C. and Bostwick, A. and Rotenberg, E. and Taufour, V. and Vishik, I. M. and da Silva Neto, E. H.},
abstractNote = {We report a detailed experimental study of the band structure of the recently discovered topological material Hf2Te2P. Using the combination of scanning tunneling spectroscopy and angle-resolved photoemission spectroscopy with surface K doping, we probe the band structure of Hf2Te2P with energy and momentum resolution above the Fermi level. Our experiments show the presence of multiple surface states with a linear Dirac-like dispersion, consistent with the predictions from previously reported band-structure calculations. In particular, scanning tunneling spectroscopy measurements provide experimental evidence for the strong topological surface state predicted at 460 meV, which stems from the band inversion between Hf-d and Te-p orbitals. As a result, this band inversion comprised of more localized d states could result in a better surface-to-bulk conductance ratio relative to more traditional topological insulators.},
doi = {10.1103/physrevb.100.081105},
journal = {Physical Review B},
number = 8,
volume = 100,
place = {United States},
year = {2019},
month = {8}
}
Web of Science
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