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Title: Topological surface states above the Fermi level in Hf 2 Te 2 P

Abstract

We report a detailed experimental study of the band structure of the recently discovered topological material Hf2Te2P. Using the combination of scanning tunneling spectroscopy and angle-resolved photoemission spectroscopy with surface K doping, we probe the band structure of Hf2Te2P with energy and momentum resolution above the Fermi level. Our experiments show the presence of multiple surface states with a linear Dirac-like dispersion, consistent with the predictions from previously reported band-structure calculations. In particular, scanning tunneling spectroscopy measurements provide experimental evidence for the strong topological surface state predicted at 460 meV, which stems from the band inversion between Hf-d and Te-p orbitals. As a result, this band inversion comprised of more localized d states could result in a better surface-to-bulk conductance ratio relative to more traditional topological insulators.

Authors:
 [1];  [2];  [1];  [1];  [1];  [1];  [1];  [3];  [3];  [3];  [1];  [1];  [1]
+ Show Author Affiliations
  1. Univ. of California, Davis, CA (United States)
  2. Univ. of California, Davis, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division
OSTI Identifier:
1574335
Alternate Identifier(s):
OSTI ID: 1556824
Grant/Contract Number:  
AC02-05CH11231; PHY-1560482
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 100; Journal Issue: 8; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Boyle, T. J., Rossi, A., Walker, M., Carlson, P., Miller, M. K., Zhao, J., Klavins, P., Jozwiak, C., Bostwick, A., Rotenberg, E., Taufour, V., Vishik, I. M., and da Silva Neto, E. H.. Topological surface states above the Fermi level in Hf2Te2P. United States: N. p., 2019. Web. doi:10.1103/physrevb.100.081105.
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Boyle, T. J., Rossi, A., Walker, M., Carlson, P., Miller, M. K., Zhao, J., Klavins, P., Jozwiak, C., Bostwick, A., Rotenberg, E., Taufour, V., Vishik, I. M., & da Silva Neto, E. H.. Topological surface states above the Fermi level in Hf2Te2P. United States. https://doi.org/10.1103/physrevb.100.081105
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Boyle, T. J., Rossi, A., Walker, M., Carlson, P., Miller, M. K., Zhao, J., Klavins, P., Jozwiak, C., Bostwick, A., Rotenberg, E., Taufour, V., Vishik, I. M., and da Silva Neto, E. H.. Mon . "Topological surface states above the Fermi level in Hf2Te2P". United States. https://doi.org/10.1103/physrevb.100.081105. https://www.osti.gov/servlets/purl/1574335.
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@article{osti_1574335,
title = {Topological surface states above the Fermi level in Hf2Te2P},
author = {Boyle, T. J. and Rossi, A. and Walker, M. and Carlson, P. and Miller, M. K. and Zhao, J. and Klavins, P. and Jozwiak, C. and Bostwick, A. and Rotenberg, E. and Taufour, V. and Vishik, I. M. and da Silva Neto, E. H.},
abstractNote = {We report a detailed experimental study of the band structure of the recently discovered topological material Hf2Te2P. Using the combination of scanning tunneling spectroscopy and angle-resolved photoemission spectroscopy with surface K doping, we probe the band structure of Hf2Te2P with energy and momentum resolution above the Fermi level. Our experiments show the presence of multiple surface states with a linear Dirac-like dispersion, consistent with the predictions from previously reported band-structure calculations. In particular, scanning tunneling spectroscopy measurements provide experimental evidence for the strong topological surface state predicted at 460 meV, which stems from the band inversion between Hf-d and Te-p orbitals. As a result, this band inversion comprised of more localized d states could result in a better surface-to-bulk conductance ratio relative to more traditional topological insulators.},
doi = {10.1103/physrevb.100.081105},
journal = {Physical Review B},
number = 8,
volume = 100,
place = {United States},
year = {2019},
month = {8}
}
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Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1103/physrevb.100.081105
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Cited by: 3 works
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Figures / Tables:

FIG. 1 FIG. 1: (a) Crystal structure of Hf2Te2P. (b) STM topography taken at −120 mV sample bias and 700 pA current setpoint. (c) Fermi surface of pristine sample measured by ARPES. (d) STS measured dI/dV spectrum with current and bias set points of 450 pA and −1.5 V.
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