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Title: Topological surface states above the Fermi level in Hf 2 Te 2 P

Journal Article · · Physical Review B
 [1];  [2];  [1];  [1];  [1];  [1];  [1];  [3];  [3];  [3];  [1];  [1];  [1]
  1. Univ. of California, Davis, CA (United States)
  2. Univ. of California, Davis, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

We report a detailed experimental study of the band structure of the recently discovered topological material Hf2Te2P. Using the combination of scanning tunneling spectroscopy and angle-resolved photoemission spectroscopy with surface K doping, we probe the band structure of Hf2Te2P with energy and momentum resolution above the Fermi level. Our experiments show the presence of multiple surface states with a linear Dirac-like dispersion, consistent with the predictions from previously reported band-structure calculations. In particular, scanning tunneling spectroscopy measurements provide experimental evidence for the strong topological surface state predicted at 460 meV, which stems from the band inversion between Hf-d and Te-p orbitals. As a result, this band inversion comprised of more localized d states could result in a better surface-to-bulk conductance ratio relative to more traditional topological insulators.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; USDOE
Grant/Contract Number:
AC02-05CH11231; PHY-1560482
OSTI ID:
1574335
Alternate ID(s):
OSTI ID: 1556824
Journal Information:
Physical Review B, Vol. 100, Issue 8; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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Figures / Tables (4)