Strain-stress study of AlxGa1–xN/AlN heterostructures on c-plane sapphire and related optical properties

Feng, Yining; Saravade, Vishal; Chung, Ting -Fung; Dong, Yongqi; Zhou, Hua; Kucukgok, Bahadir; Ferguson, Ian T.; Lu, Na

doi:10.1038/s41598-019-46628-4

Title: Strain-stress study of Al_xGa_1–xN/AlN heterostructures on c-plane sapphire and related optical properties

Journal Article · 15 July 2019 · Scientific Reports

DOI: https://doi.org/10.1038/s41598-019-46628-4 · OSTI ID:1574136

^[1]; Saravade, Vishal ^[2];

^[3]; Dong, Yongqi ^[4]; Zhou, Hua ^[5]; Kucukgok, Bahadir ^[1]; Ferguson, Ian T. ^[6]; Lu, Na ^[7]

Purdue Univ., West Lafayette, IN (United States). Lyles School of Civil Engineering, Birck Nanotechnology Center; Argonne National Lab. (ANL), Lemont, IL (United States). Applied Materials Div.
Missouri Univ. of Science and Technology, Rolla, MO (United States). Electrical and Computer Engineering
Purdue Univ., West Lafayette, IN (United States). Lyles School of Civil Engineering, Birck Nanotechnology Center
Univ. of Science and Technology of China, Anhui (China). National Synchrotron Radiation Lab.; Argonne National Lab. (ANL), Lemont, IL (United States). Advanced Photon Source
Argonne National Lab. (ANL), Lemont, IL (United States). Advanced Photon Source
Missouri Univ. of Science and Technology, Rolla, MO (United States). Electrical and Computer Engineering; Kennesaw State Univ., Marietta, GA (United States). Southern Polytechnic College of Engineering and Engineering Technology
Purdue Univ., West Lafayette, IN (United States). Lyles School of Civil Engineering, Birck Nanotechnology Center and School of Materials Engineering

This work presents a systematic study of stress and strain of Al_xGa_1-xN/AlN with composition ranging from GaN to AlN, grown on a c-plane sapphire by metal-organic chemical vapor deposition, using synchrotron radiation high-resolution X-ray diffraction and reciprocal space mapping. The c-plane of the Al_xGa_1-xN epitaxial layers exhibits compressive strain, while the alpha-plane exhibits tensile strain. The biaxial stress and strain are found to increase with increasing Al composition, although the lattice mismatch between the Al_xGa_1-xN and the buffer layer AlN gets smaller. A reduction in the lateral coherence lengths and an increase in the edge and screw dislocations are seen as the Al_xGa_1-xN composition is varied from GaN to AlN, exhibiting a clear dependence of the crystal properties of Al_xGa_1-xN on the Al content. The bandgap of the epitaxial layers is slightly lower than predicted value due to a larger tensile strain effect on the alpha-axis compared to the compressive strain on the c-axis. Raman characteristics of the Al_xGa_1-xN samples exhibit a shift in the phonon peaks with the Al composition. The effect of strain on the optical phonon energies of the epitaxial layers is also discussed

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Foundation (NSF)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1574136

Journal Information:: Scientific Reports, Journal Name: Scientific Reports Journal Issue: 1 Vol. 9; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Energy band bowing parameter in AlxGa1−xN alloys Yun, Feng; Reshchikov, Michael A.; He, Lei Journal of Applied Physics, Vol. 92, Issue 8 https://doi.org/10.1063/1.1508420	journal	October 2002
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The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors Choi, Sukwon; Heller, Eric; Dorsey, Donald Journal of Applied Physics, Vol. 114, Issue 16 https://doi.org/10.1063/1.4826524	journal	October 2013
High-resolution X-ray diffraction analysis of Al _x Ga _1−x N/In _x Ga _1−x N/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations Jana, Sanjay Kumar; Mukhopadhyay, Partha; Ghosh, Saptarsi Journal of Applied Physics, Vol. 115, Issue 17 https://doi.org/10.1063/1.4875382	journal	May 2014
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