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Title: GaAs x-ray detectors with sub-nanosecond temporal response

Journal Article · · Review of Scientific Instruments
DOI: https://doi.org/10.1063/1.5127294 · OSTI ID:1574066

Fast semiconductor radiation detectors operated in current mode provide a valuable diagnostic in pulsed power applications. Si detectors are common due to the availability of high-quality materials and mature fabrication processes, but they offer low absorption for hard x-rays above ∼10 keV. GaAs can provide increased hard x-ray absorption for the same detector volume due to a higher atomic number. GaAs photodiodes have been produced from epitaxial material grown at Sandia National Laboratories and fabricated at Sandia’s microfabrication facility. These detectors have significantly higher hard x-ray absorption (>10× at 15 keV) and nearly identical temporal impulse response to similarly sized Si detectors of 0.5 ns full-width half maximum.

Sponsoring Organization:
USDOE
OSTI ID:
1574066
Journal Information:
Review of Scientific Instruments, Journal Name: Review of Scientific Instruments Journal Issue: 11 Vol. 90; ISSN 0034-6748
Publisher:
American Institute of PhysicsCopyright Statement
Country of Publication:
United States
Language:
English

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