Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity
Abstract
Despite the remarkable optoelectronic properties of halide perovskites, achieving reproducible field effect transistor (FET) action in polycrystalline films at room temperature has been challenging and represents a fundamental bottleneck for understanding electronic charge transport in these materials. In this work, we report halide perovskite-based FET operation at room temperature with negligible hysteresis. Extensive measurements and device modeling reveal that incorporating high-k dielectrics enables modulation of the channel conductance. Furthermore, continuous bias cycling or resting allows dynamical reconfiguration of the FETs between p-type behavior and ambipolar FET with balanced electron and hole transport and an ON/OFF ratio up to 104 and negligible degradation in transport characteristics over 100 cycles. Furthermore, these results elucidate the path for achieving gate modulation in perovskite thin films and provide a platform to understand the interplay between the perovskite structure and external stimuli such as photons, fields, and functional substrates, which will lead to novel and emergent properties.
- Authors:
-
[2];
[6];
[3];
[9];
[6];
[10];
[4]
- Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States, Institute of Electronics and Telecommunications of Rennes (IETR), UMR CNRS 6164, University of Rennes 1, 35042 Rennes, France
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States, Department of Engineering “Enzo Ferrari”, University of Modena and Reggio Emilia, Modena, 41125, Italy
- Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
- Department of Chemical and Biomolecular Engineering and Department of Material Science and Nanoengineering, Rice University, Houston, Texas 77005, United States
- Department of Electrical Engineering, University of Louisville, Louisville, Kentucky 40292, United States
- Univ Rennes, INSA Rennes, CNRS, Institut FOTON - UMR 6082, F-35000 Rennes, France
- Institute of Electronics and Telecommunications of Rennes (IETR), UMR CNRS 6164, University of Rennes 1, 35042 Rennes, France
- Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States, Department of Chemical and Biomolecular Engineering and Department of Material Science and Nanoengineering, Rice University, Houston, Texas 77005, United States
- Univ Rennes, ENSCR, INSA Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes) - UMR 6226, F-35000 Rennes, France
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Publication Date:
- Research Org.:
- Rice Univ., Houston, TX (United States); Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE); USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA); USDOE Laboratory Directed Research and Development (LDRD) Program; National Science Foundation (NSF)
- OSTI Identifier:
- 1574062
- Alternate Identifier(s):
- OSTI ID: 1576743; OSTI ID: 1604003
- Report Number(s):
- LA-UR-19-28793
Journal ID: ISSN 2639-4979
- Grant/Contract Number:
- SC0012541; 89233218CNA000001; CBET-1512106
- Resource Type:
- Published Article
- Journal Name:
- ACS Materials Letters
- Additional Journal Information:
- Journal Name: ACS Materials Letters Journal Volume: 1 Journal Issue: 6; Journal ID: ISSN 2639-4979
- Publisher:
- ACS Publications
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Oxides; Interfaces; Layers; Insulators; Perovskites
Citation Formats
Canicoba, Noelia Devesa, Zagni, Nicolò, Liu, Fangze, McCuistian, Gary, Fernando, Kasun, Bellezza, Hugo, Traoré, Boubacar, Rogel, Regis, Tsai, Hsinhan, Le Brizoual, Laurent, Nie, Wanyi, Crochet, Jared J., Tretiak, Sergei, Katan, Claudine, Even, Jacky, Kanatzidis, Mercouri G., Alphenaar, Bruce W., Blancon, Jean-Christophe, Alam, Muhammad Ashraf, and Mohite, Aditya D. Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity. United States: N. p., 2019.
Web. doi:10.1021/acsmaterialslett.9b00357.
Canicoba, Noelia Devesa, Zagni, Nicolò, Liu, Fangze, McCuistian, Gary, Fernando, Kasun, Bellezza, Hugo, Traoré, Boubacar, Rogel, Regis, Tsai, Hsinhan, Le Brizoual, Laurent, Nie, Wanyi, Crochet, Jared J., Tretiak, Sergei, Katan, Claudine, Even, Jacky, Kanatzidis, Mercouri G., Alphenaar, Bruce W., Blancon, Jean-Christophe, Alam, Muhammad Ashraf, & Mohite, Aditya D. Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity. United States. https://doi.org/10.1021/acsmaterialslett.9b00357
Canicoba, Noelia Devesa, Zagni, Nicolò, Liu, Fangze, McCuistian, Gary, Fernando, Kasun, Bellezza, Hugo, Traoré, Boubacar, Rogel, Regis, Tsai, Hsinhan, Le Brizoual, Laurent, Nie, Wanyi, Crochet, Jared J., Tretiak, Sergei, Katan, Claudine, Even, Jacky, Kanatzidis, Mercouri G., Alphenaar, Bruce W., Blancon, Jean-Christophe, Alam, Muhammad Ashraf, and Mohite, Aditya D. Tue .
"Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity". United States. https://doi.org/10.1021/acsmaterialslett.9b00357.
@article{osti_1574062,
title = {Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity},
author = {Canicoba, Noelia Devesa and Zagni, Nicolò and Liu, Fangze and McCuistian, Gary and Fernando, Kasun and Bellezza, Hugo and Traoré, Boubacar and Rogel, Regis and Tsai, Hsinhan and Le Brizoual, Laurent and Nie, Wanyi and Crochet, Jared J. and Tretiak, Sergei and Katan, Claudine and Even, Jacky and Kanatzidis, Mercouri G. and Alphenaar, Bruce W. and Blancon, Jean-Christophe and Alam, Muhammad Ashraf and Mohite, Aditya D.},
abstractNote = {Despite the remarkable optoelectronic properties of halide perovskites, achieving reproducible field effect transistor (FET) action in polycrystalline films at room temperature has been challenging and represents a fundamental bottleneck for understanding electronic charge transport in these materials. In this work, we report halide perovskite-based FET operation at room temperature with negligible hysteresis. Extensive measurements and device modeling reveal that incorporating high-k dielectrics enables modulation of the channel conductance. Furthermore, continuous bias cycling or resting allows dynamical reconfiguration of the FETs between p-type behavior and ambipolar FET with balanced electron and hole transport and an ON/OFF ratio up to 104 and negligible degradation in transport characteristics over 100 cycles. Furthermore, these results elucidate the path for achieving gate modulation in perovskite thin films and provide a platform to understand the interplay between the perovskite structure and external stimuli such as photons, fields, and functional substrates, which will lead to novel and emergent properties.},
doi = {10.1021/acsmaterialslett.9b00357},
journal = {ACS Materials Letters},
number = 6,
volume = 1,
place = {United States},
year = {Tue Oct 29 00:00:00 EDT 2019},
month = {Tue Oct 29 00:00:00 EDT 2019}
}
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