Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity

Journal Article · 29 October 2019 · ACS Materials Letters

DOI: https://doi.org/10.1021/acsmaterialslett.9b00357 · OSTI ID:1574062

Canicoba, Noelia Devesa ^[1]; Zagni, Nicolò  ^[2]; Liu, Fangze ^[3]; McCuistian, Gary ^[4]; Fernando, Kasun ^[5]; Bellezza, Hugo ^[3]; Traoré, Boubacar  ^[6]; Rogel, Regis ^[7]; Tsai, Hsinhan ^[8]; Le Brizoual, Laurent ^[7]; Nie, Wanyi ^[3]; Crochet, Jared J. ^[3]; Tretiak, Sergei  ^[3]; Katan, Claudine  ^[9]; Even, Jacky  ^[6]; Kanatzidis, Mercouri G.  ^[10]; Alphenaar, Bruce W. ^[5]; Blancon, Jean-Christophe ^[4]; Alam, Muhammad Ashraf ^[11]; Mohite, Aditya D.  ^[4]

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1. Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States, Institute of Electronics and Telecommunications of Rennes (IETR), UMR CNRS 6164, University of Rennes 1, 35042 Rennes, France
2. School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States, Department of Engineering “Enzo Ferrari”, University of Modena and Reggio Emilia, Modena, 41125, Italy
3. Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
4. Department of Chemical and Biomolecular Engineering and Department of Material Science and Nanoengineering, Rice University, Houston, Texas 77005, United States
5. Department of Electrical Engineering, University of Louisville, Louisville, Kentucky 40292, United States
6. Univ Rennes, INSA Rennes, CNRS, Institut FOTON - UMR 6082, F-35000 Rennes, France
7. Institute of Electronics and Telecommunications of Rennes (IETR), UMR CNRS 6164, University of Rennes 1, 35042 Rennes, France
8. Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States, Department of Chemical and Biomolecular Engineering and Department of Material Science and Nanoengineering, Rice University, Houston, Texas 77005, United States
9. Univ Rennes, ENSCR, INSA Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes) - UMR 6226, F-35000 Rennes, France
10. Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
11. School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States

Despite the remarkable optoelectronic properties of halide perovskites, achieving reproducible field effect transistor (FET) action in polycrystalline films at room temperature has been challenging and represents a fundamental bottleneck for understanding electronic charge transport in these materials. In this work, we report halide perovskite-based FET operation at room temperature with negligible hysteresis. Extensive measurements and device modeling reveal that incorporating high-k dielectrics enables modulation of the channel conductance. Furthermore, continuous bias cycling or resting allows dynamical reconfiguration of the FETs between p-type behavior and ambipolar FET with balanced electron and hole transport and an ON/OFF ratio up to 104 and negligible degradation in transport characteristics over 100 cycles. Furthermore, these results elucidate the path for achieving gate modulation in perovskite thin films and provide a platform to understand the interplay between the perovskite structure and external stimuli such as photons, fields, and functional substrates, which will lead to novel and emergent properties.

• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE)
• Grant/Contract Number: SC0012541
• OSTI ID: 1574062
• Journal Information: ACS Materials Letters, Journal Name: ACS Materials Letters Journal Issue: 6 Vol. 1; ISSN 2639-4979
• Publisher: ACS PublicationsCopyright Statement
• Country of Publication: United States
• Language: English