Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity

Journal Article · 29 October 2019 · ACS Materials Letters

DOI: https://doi.org/10.1021/acsmaterialslett.9b00357 · OSTI ID:1574062

Canicoba, Noelia Devesa ^[1]; Zagni, Nicolò  ^[2]; Liu, Fangze  ^[3]; McCuistian, Gary ^[4]; Fernando, Kasun ^[5]; Bellezza, Hugo ^[3]; Traoré, Boubacar  ^[6]; Rogel, Regis ^[7]; Tsai, Hsinhan  ^[8]; Le Brizoual, Laurent ^[7]; Nie, Wanyi  ^[3]; Crochet, Jared J.  ^[3]; Tretiak, Sergei  ^[3]; Katan, Claudine  ^[7]; Even, Jacky  ^[6]; Kanatzidis, Mercouri G.  ^[9]; Alphenaar, Bruce W. ^[5]; Blancon, Jean -Christophe ^[4]; Alam, Muhammad Ashraf ^[10]; Mohite, Aditya D.  ^[4]

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1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Univ. of Rennes, Rennes (France)
2. Purdue Univ., West Lafayette, IN (United States); Univ. of Modena and Reggio Emilia, Modena (Italy)
3. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
4. Rice Univ., Houston, TX (United States)
5. Univ. of Louisville, Louisville, KY (United States)
6. Univ Rennes, Rennes (France)
7. Univ. of Rennes, Rennes (France)
8. Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Rice Univ., Houston, TX (United States)
9. Northwestern Univ., Evanston, IL (United States)
10. Purdue Univ., West Lafayette, IN (United States)

Despite the remarkable optoelectronic properties of halide perovskites, achieving reproducible field effect transistor (FET) action in polycrystalline films at room temperature has been challenging and represents a fundamental bottleneck for understanding electronic charge transport in these materials. In this work, we report halide perovskite-based FET operation at room temperature with negligible hysteresis. Extensive measurements and device modeling reveal that incorporating high-k dielectrics enables modulation of the channel conductance. Furthermore, continuous bias cycling or resting allows dynamical reconfiguration of the FETs between p-type behavior and ambipolar FET with balanced electron and hole transport and an ON/OFF ratio up to 104 and negligible degradation in transport characteristics over 100 cycles. Furthermore, these results elucidate the path for achieving gate modulation in perovskite thin films and provide a platform to understand the interplay between the perovskite structure and external stimuli such as photons, fields, and functional substrates, which will lead to novel and emergent properties.

• Research Organization: Rice Univ., Houston, TX (United States); Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE); USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA); USDOE Laboratory Directed Research and Development (LDRD) Program; National Science Foundation (NSF)
• Grant/Contract Number: SC0012541; 89233218CNA000001; CBET-1512106
• OSTI ID: 1574062
• Alternate ID(s): OSTI ID: 1576743; OSTI ID: 1604003
• Report Number(s): LA-UR-19-28793
• Journal Information: ACS Materials Letters, Vol. 1, Issue 6; ISSN 2639-4979
• Publisher: ACS PublicationsCopyright Statement
• Country of Publication: United States
• Language: English