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Title: Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity

Abstract

Despite the remarkable optoelectronic properties of halide perovskites, achieving reproducible field effect transistor (FET) action in polycrystalline films at room temperature has been challenging and represents a fundamental bottleneck for understanding electronic charge transport in these materials. In this work, we report halide perovskite-based FET operation at room temperature with negligible hysteresis. Extensive measurements and device modeling reveal that incorporating high-k dielectrics enables modulation of the channel conductance. Furthermore, continuous bias cycling or resting allows dynamical reconfiguration of the FETs between p-type behavior and ambipolar FET with balanced electron and hole transport and an ON/OFF ratio up to 104 and negligible degradation in transport characteristics over 100 cycles. Furthermore, these results elucidate the path for achieving gate modulation in perovskite thin films and provide a platform to understand the interplay between the perovskite structure and external stimuli such as photons, fields, and functional substrates, which will lead to novel and emergent properties.

Authors:
 [1]; ORCiD logo [2];  [3];  [4];  [5];  [3]; ORCiD logo [6];  [7];  [8];  [7];  [3];  [3]; ORCiD logo [3]; ORCiD logo [9]; ORCiD logo [6]; ORCiD logo [10];  [5];  [4];  [11]; ORCiD logo [4]
  1. Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States, Institute of Electronics and Telecommunications of Rennes (IETR), UMR CNRS 6164, University of Rennes 1, 35042 Rennes, France
  2. School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States, Department of Engineering “Enzo Ferrari”, University of Modena and Reggio Emilia, Modena, 41125, Italy
  3. Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
  4. Department of Chemical and Biomolecular Engineering and Department of Material Science and Nanoengineering, Rice University, Houston, Texas 77005, United States
  5. Department of Electrical Engineering, University of Louisville, Louisville, Kentucky 40292, United States
  6. Univ Rennes, INSA Rennes, CNRS, Institut FOTON - UMR 6082, F-35000 Rennes, France
  7. Institute of Electronics and Telecommunications of Rennes (IETR), UMR CNRS 6164, University of Rennes 1, 35042 Rennes, France
  8. Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States, Department of Chemical and Biomolecular Engineering and Department of Material Science and Nanoengineering, Rice University, Houston, Texas 77005, United States
  9. Univ Rennes, ENSCR, INSA Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes) - UMR 6226, F-35000 Rennes, France
  10. Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
  11. School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
Publication Date:
Research Org.:
Rice Univ., Houston, TX (United States); Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE); USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA); USDOE Laboratory Directed Research and Development (LDRD) Program; National Science Foundation (NSF)
OSTI Identifier:
1574062
Alternate Identifier(s):
OSTI ID: 1576743; OSTI ID: 1604003
Report Number(s):
LA-UR-19-28793
Journal ID: ISSN 2639-4979
Grant/Contract Number:  
SC0012541; 89233218CNA000001; CBET-1512106
Resource Type:
Published Article
Journal Name:
ACS Materials Letters
Additional Journal Information:
Journal Name: ACS Materials Letters Journal Volume: 1 Journal Issue: 6; Journal ID: ISSN 2639-4979
Publisher:
ACS Publications
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Oxides; Interfaces; Layers; Insulators; Perovskites

Citation Formats

Canicoba, Noelia Devesa, Zagni, Nicolò, Liu, Fangze, McCuistian, Gary, Fernando, Kasun, Bellezza, Hugo, Traoré, Boubacar, Rogel, Regis, Tsai, Hsinhan, Le Brizoual, Laurent, Nie, Wanyi, Crochet, Jared J., Tretiak, Sergei, Katan, Claudine, Even, Jacky, Kanatzidis, Mercouri G., Alphenaar, Bruce W., Blancon, Jean-Christophe, Alam, Muhammad Ashraf, and Mohite, Aditya D. Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity. United States: N. p., 2019. Web. doi:10.1021/acsmaterialslett.9b00357.
Canicoba, Noelia Devesa, Zagni, Nicolò, Liu, Fangze, McCuistian, Gary, Fernando, Kasun, Bellezza, Hugo, Traoré, Boubacar, Rogel, Regis, Tsai, Hsinhan, Le Brizoual, Laurent, Nie, Wanyi, Crochet, Jared J., Tretiak, Sergei, Katan, Claudine, Even, Jacky, Kanatzidis, Mercouri G., Alphenaar, Bruce W., Blancon, Jean-Christophe, Alam, Muhammad Ashraf, & Mohite, Aditya D. Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity. United States. doi:https://doi.org/10.1021/acsmaterialslett.9b00357
Canicoba, Noelia Devesa, Zagni, Nicolò, Liu, Fangze, McCuistian, Gary, Fernando, Kasun, Bellezza, Hugo, Traoré, Boubacar, Rogel, Regis, Tsai, Hsinhan, Le Brizoual, Laurent, Nie, Wanyi, Crochet, Jared J., Tretiak, Sergei, Katan, Claudine, Even, Jacky, Kanatzidis, Mercouri G., Alphenaar, Bruce W., Blancon, Jean-Christophe, Alam, Muhammad Ashraf, and Mohite, Aditya D. Tue . "Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity". United States. doi:https://doi.org/10.1021/acsmaterialslett.9b00357.
@article{osti_1574062,
title = {Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity},
author = {Canicoba, Noelia Devesa and Zagni, Nicolò and Liu, Fangze and McCuistian, Gary and Fernando, Kasun and Bellezza, Hugo and Traoré, Boubacar and Rogel, Regis and Tsai, Hsinhan and Le Brizoual, Laurent and Nie, Wanyi and Crochet, Jared J. and Tretiak, Sergei and Katan, Claudine and Even, Jacky and Kanatzidis, Mercouri G. and Alphenaar, Bruce W. and Blancon, Jean-Christophe and Alam, Muhammad Ashraf and Mohite, Aditya D.},
abstractNote = {Despite the remarkable optoelectronic properties of halide perovskites, achieving reproducible field effect transistor (FET) action in polycrystalline films at room temperature has been challenging and represents a fundamental bottleneck for understanding electronic charge transport in these materials. In this work, we report halide perovskite-based FET operation at room temperature with negligible hysteresis. Extensive measurements and device modeling reveal that incorporating high-k dielectrics enables modulation of the channel conductance. Furthermore, continuous bias cycling or resting allows dynamical reconfiguration of the FETs between p-type behavior and ambipolar FET with balanced electron and hole transport and an ON/OFF ratio up to 104 and negligible degradation in transport characteristics over 100 cycles. Furthermore, these results elucidate the path for achieving gate modulation in perovskite thin films and provide a platform to understand the interplay between the perovskite structure and external stimuli such as photons, fields, and functional substrates, which will lead to novel and emergent properties.},
doi = {10.1021/acsmaterialslett.9b00357},
journal = {ACS Materials Letters},
number = 6,
volume = 1,
place = {United States},
year = {2019},
month = {10}
}

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Free Publicly Available Full Text
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DOI: https://doi.org/10.1021/acsmaterialslett.9b00357

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Works referenced in this record:

Metal-halide perovskites for photovoltaic and light-emitting devices
journal, May 2015

  • Stranks, Samuel D.; Snaith, Henry J.
  • Nature Nanotechnology, Vol. 10, Issue 5
  • DOI: 10.1038/nnano.2015.90

Solution-Processed Organic-Inorganic Perovskite Field-Effect Transistors with High Hole Mobilities
journal, September 2016

  • Matsushima, Toshinori; Hwang, Sunbin; Sandanayaka, Atula S. D.
  • Advanced Materials, Vol. 28, Issue 46
  • DOI: 10.1002/adma.201603126

High spectral resolution of gamma-rays at room temperature by perovskite CsPbBr3 single crystals
journal, April 2018


Reconfigurable Silicon Nanowire Transistors
journal, December 2011

  • Heinzig, André; Slesazeck, Stefan; Kreupl, Franz
  • Nano Letters, Vol. 12, Issue 1
  • DOI: 10.1021/nl203094h

The renaissance of dye-sensitized solar cells
journal, February 2012

  • Hardin, Brian E.; Snaith, Henry J.; McGehee, Michael D.
  • Nature Photonics, Vol. 6, Issue 3
  • DOI: 10.1038/nphoton.2012.22

Effect of Precursor Solution Aging on the Crystallinity and Photovoltaic Performance of Perovskite Solar Cells
journal, January 2017

  • Tsai, Hsinhan; Nie, Wanyi; Lin, Yen-Hao
  • Advanced Energy Materials, Vol. 7, Issue 11
  • DOI: 10.1002/aenm.201602159

Critical Role of Interface and Crystallinity on the Performance and Photostability of Perovskite Solar Cell on Nickel Oxide
journal, December 2017

  • Nie, Wanyi; Tsai, Hsinhan; Blancon, Jean-Christophe
  • Advanced Materials, Vol. 30, Issue 5
  • DOI: 10.1002/adma.201703879

Low trap-state density and long carrier diffusion in organolead trihalide perovskite single crystals
journal, January 2015


Reconfigurable VLSI architectures for evolvable hardware: from experimental field programmable transistor arrays to evolution-oriented chips
journal, February 2001

  • Stoica, A.; Zebulum, R.; Keymeulen, D.
  • IEEE Transactions on Very Large Scale Integration (VLSI) Systems, Vol. 9, Issue 1
  • DOI: 10.1109/92.920839

Sequential deposition as a route to high-performance perovskite-sensitized solar cells
journal, July 2013

  • Burschka, Julian; Pellet, Norman; Moon, Soo-Jin
  • Nature, Vol. 499, Issue 7458, p. 316-319
  • DOI: 10.1038/nature12340

Iodide management in formamidinium-lead-halide–based perovskite layers for efficient solar cells
journal, June 2017


Direct measurement of the exciton binding energy and effective masses for charge carriers in organic–inorganic tri-halide perovskites
journal, June 2015

  • Miyata, Atsuhiko; Mitioglu, Anatolie; Plochocka, Paulina
  • Nature Physics, Vol. 11, Issue 7
  • DOI: 10.1038/nphys3357

Iodine Migration and its Effect on Hysteresis in Perovskite Solar Cells
journal, January 2016

  • Li, Cheng; Tscheuschner, Steffen; Paulus, Fabian
  • Advanced Materials, Vol. 28, Issue 12
  • DOI: 10.1002/adma.201503832

Bright Light-Emitting Diodes Based on Organometal Halide Perovskite Nanoplatelets
journal, November 2015


Light-induced lattice expansion leads to high-efficiency perovskite solar cells
journal, April 2018

  • Tsai, Hsinhan; Asadpour, Reza; Blancon, Jean-Christophe
  • Science, Vol. 360, Issue 6384
  • DOI: 10.1126/science.aap8671

Solar cell efficiency tables (version 50)
journal, June 2017

  • Green, Martin A.; Hishikawa, Yoshihiro; Warta, Wilhelm
  • Progress in Photovoltaics: Research and Applications, Vol. 25, Issue 7
  • DOI: 10.1002/pip.2909

Lead iodide perovskite light-emitting field-effect transistor
journal, June 2015

  • Chin, Xin Yu; Cortecchia, Daniele; Yin, Jun
  • Nature Communications, Vol. 6, Issue 1
  • DOI: 10.1038/ncomms8383

Cesium-containing triple cation perovskite solar cells: improved stability, reproducibility and high efficiency
journal, January 2016

  • Saliba, Michael; Matsui, Taisuke; Seo, Ji-Youn
  • Energy & Environmental Science, Vol. 9, Issue 6
  • DOI: 10.1039/C5EE03874J

Electron-Hole Diffusion Lengths Exceeding 1 Micrometer in an Organometal Trihalide Perovskite Absorber
journal, October 2013

  • Stranks, S. D.; Eperon, G. E.; Grancini, G.
  • Science, Vol. 342, Issue 6156, p. 341-344
  • DOI: 10.1126/science.1243982

Printable organometallic perovskite enables large-area, low-dose X-ray imaging
journal, October 2017

  • Kim, Yong Churl; Kim, Kwang Hee; Son, Dae-Yong
  • Nature, Vol. 550, Issue 7674
  • DOI: 10.1038/nature24032

Understanding charge transport in lead iodide perovskite thin-film field-effect transistors
journal, January 2017

  • Senanayak, Satyaprasad P.; Yang, Bingyan; Thomas, Tudor H.
  • Science Advances, Vol. 3, Issue 1
  • DOI: 10.1126/sciadv.1601935

Entropy in halide perovskites
journal, April 2018


Single crystal hybrid perovskite field-effect transistors
journal, December 2018


Ambipolar solution-processed hybrid perovskite phototransistors
journal, September 2015

  • Li, Feng; Ma, Chun; Wang, Hong
  • Nature Communications, Vol. 6, Issue 1
  • DOI: 10.1038/ncomms9238

Real-Time Observation of Iodide Ion Migration in Methylammonium Lead Halide Perovskites
journal, September 2017


Present status and future prospects of perovskite photovoltaics
journal, April 2018


Stable Light-Emitting Diodes Using Phase-Pure Ruddlesden-Popper Layered Perovskites
journal, January 2018

  • Tsai, Hsinhan; Nie, Wanyi; Blancon, Jean-Christophe
  • Advanced Materials, Vol. 30, Issue 6
  • DOI: 10.1002/adma.201704217

The Effects of Electronic Impurities and Electron-Hole Recombination Dynamics on Large-Grain Organic-Inorganic Perovskite Photovoltaic Efficiencies
journal, April 2016

  • Blancon, Jean-Christophe; Nie, Wanyi; Neukirch, Amanda J.
  • Advanced Functional Materials, Vol. 26, Issue 24
  • DOI: 10.1002/adfm.201505324

Organic-Inorganic Hybrid Materials as Semiconducting Channels in Thin-Film Field-Effect Transistors
journal, October 1999


Detection of gamma photons using solution-grown single crystals of hybrid lead halide perovskites
journal, July 2016

  • Yakunin, Sergii; Dirin, Dmitry N.; Shynkarenko, Yevhen
  • Nature Photonics, Vol. 10, Issue 9
  • DOI: 10.1038/nphoton.2016.139

First-principles calculation of the band offset at B a O / B a T i O 3 and S r O / S r T i O 3 interfaces
journal, April 2003


Color-stable highly luminescent sky-blue perovskite light-emitting diodes
journal, August 2018


A mixed-cation lead mixed-halide perovskite absorber for tandem solar cells
journal, January 2016


What Remains Unexplained about the Properties of Halide Perovskites?
journal, March 2018

  • Egger, David A.; Bera, Achintya; Cahen, David
  • Advanced Materials, Vol. 30, Issue 20
  • DOI: 10.1002/adma.201800691

Light-induced picosecond rotational disordering of the inorganic sublattice in hybrid perovskites
journal, July 2017


Light-activated photocurrent degradation and self-healing in perovskite solar cells
journal, May 2016

  • Nie, Wanyi; Blancon, Jean-Christophe; Neukirch, Amanda J.
  • Nature Communications, Vol. 7, Issue 1
  • DOI: 10.1038/ncomms11574

High-efficiency solution-processed perovskite solar cells with millimeter-scale grains
journal, January 2015


Electrostatic gating of hybrid halide perovskite field-effect transistors: balanced ambipolar transport at room-temperature
journal, May 2015

  • Mei, Y.; Zhang, C.; Vardeny, Z. V.
  • MRS Communications, Vol. 5, Issue 2
  • DOI: 10.1557/mrc.2015.21

Perovskite Materials for Light-Emitting Diodes and Lasers
journal, May 2016

  • Veldhuis, Sjoerd A.; Boix, Pablo P.; Yantara, Natalia
  • Advanced Materials, Vol. 28, Issue 32
  • DOI: 10.1002/adma.201600669

Organic Heterostructure Field-Effect Transistors
journal, September 1995