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Title: Halide Perovskite High- k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity

Abstract

Despite the remarkable optoelectronic properties of halide perovskites, achieving reproducible field effect transistor (FET) action in polycrystalline films at room temperature has been challenging and represents a fundamental bottleneck for understanding electronic charge transport in these materials. In this work, we report halide perovskite-based FET operation at room temperature with negligible hysteresis. Extensive measurements and device modeling reveal that incorporating high-k dielectrics enables modulation of the channel conductance. Furthermore, continuous bias cycling or resting allows dynamical reconfiguration of the FETs between p-type behavior and ambipolar FET with balanced electron and hole transport and an ON/OFF ratio up to 104 and negligible degradation in transport characteristics over 100 cycles. Furthermore, these results elucidate the path for achieving gate modulation in perovskite thin films and provide a platform to understand the interplay between the perovskite structure and external stimuli such as photons, fields, and functional substrates, which will lead to novel and emergent properties.

Authors:
 [1]; ORCiD logo [2];  [3];  [4];  [5];  [3]; ORCiD logo [6];  [7];  [8];  [7];  [3];  [3]; ORCiD logo [3]; ORCiD logo [7]; ORCiD logo [6]; ORCiD logo [9];  [5];  [4];  [10]; ORCiD logo [4]
  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Univ. of Rennes, Rennes (France)
  2. Purdue Univ., West Lafayette, IN (United States); Univ. of Modena and Reggio Emilia, Modena (Italy)
  3. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  4. Rice Univ., Houston, TX (United States)
  5. Univ. of Louisville, Louisville, KY (United States)
  6. Univ Rennes, Rennes (France)
  7. Univ. of Rennes, Rennes (France)
  8. Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Rice Univ., Houston, TX (United States)
  9. Northwestern Univ., Evanston, IL (United States)
  10. Purdue Univ., West Lafayette, IN (United States)
Publication Date:
Research Org.:
Rice Univ., Houston, TX (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1574062
Alternate Identifier(s):
OSTI ID: 1576743
Grant/Contract Number:  
SC0012541; FOA-0002022-1652
Resource Type:
Published Article
Journal Name:
ACS Materials Letters
Additional Journal Information:
Journal Volume: 1; Journal Issue: 6; Journal ID: ISSN 2639-4979
Publisher:
ACS Publications
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Canicoba, Noelia Devesa, Zagni, Nicolò, Liu, Fangze, McCuistian, Gary, Fernando, Kasun, Bellezza, Hugo, Traoré, Boubacar, Rogel, Regis, Tsai, Hsinhan, Le Brizoual, Laurent, Nie, Wanyi, Crochet, Jared J., Tretiak, Sergei, Katan, Claudine, Even, Jacky, Kanatzidis, Mercouri G., Alphenaar, Bruce W., Blancon, Jean -Christophe, Alam, Muhammad Ashraf, and Mohite, Aditya D. Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity. United States: N. p., 2019. Web. doi:10.1021/acsmaterialslett.9b00357.
Canicoba, Noelia Devesa, Zagni, Nicolò, Liu, Fangze, McCuistian, Gary, Fernando, Kasun, Bellezza, Hugo, Traoré, Boubacar, Rogel, Regis, Tsai, Hsinhan, Le Brizoual, Laurent, Nie, Wanyi, Crochet, Jared J., Tretiak, Sergei, Katan, Claudine, Even, Jacky, Kanatzidis, Mercouri G., Alphenaar, Bruce W., Blancon, Jean -Christophe, Alam, Muhammad Ashraf, & Mohite, Aditya D. Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity. United States. doi:10.1021/acsmaterialslett.9b00357.
Canicoba, Noelia Devesa, Zagni, Nicolò, Liu, Fangze, McCuistian, Gary, Fernando, Kasun, Bellezza, Hugo, Traoré, Boubacar, Rogel, Regis, Tsai, Hsinhan, Le Brizoual, Laurent, Nie, Wanyi, Crochet, Jared J., Tretiak, Sergei, Katan, Claudine, Even, Jacky, Kanatzidis, Mercouri G., Alphenaar, Bruce W., Blancon, Jean -Christophe, Alam, Muhammad Ashraf, and Mohite, Aditya D. Tue . "Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity". United States. doi:10.1021/acsmaterialslett.9b00357.
@article{osti_1574062,
title = {Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity},
author = {Canicoba, Noelia Devesa and Zagni, Nicolò and Liu, Fangze and McCuistian, Gary and Fernando, Kasun and Bellezza, Hugo and Traoré, Boubacar and Rogel, Regis and Tsai, Hsinhan and Le Brizoual, Laurent and Nie, Wanyi and Crochet, Jared J. and Tretiak, Sergei and Katan, Claudine and Even, Jacky and Kanatzidis, Mercouri G. and Alphenaar, Bruce W. and Blancon, Jean -Christophe and Alam, Muhammad Ashraf and Mohite, Aditya D.},
abstractNote = {Despite the remarkable optoelectronic properties of halide perovskites, achieving reproducible field effect transistor (FET) action in polycrystalline films at room temperature has been challenging and represents a fundamental bottleneck for understanding electronic charge transport in these materials. In this work, we report halide perovskite-based FET operation at room temperature with negligible hysteresis. Extensive measurements and device modeling reveal that incorporating high-k dielectrics enables modulation of the channel conductance. Furthermore, continuous bias cycling or resting allows dynamical reconfiguration of the FETs between p-type behavior and ambipolar FET with balanced electron and hole transport and an ON/OFF ratio up to 104 and negligible degradation in transport characteristics over 100 cycles. Furthermore, these results elucidate the path for achieving gate modulation in perovskite thin films and provide a platform to understand the interplay between the perovskite structure and external stimuli such as photons, fields, and functional substrates, which will lead to novel and emergent properties.},
doi = {10.1021/acsmaterialslett.9b00357},
journal = {ACS Materials Letters},
number = 6,
volume = 1,
place = {United States},
year = {2019},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1021/acsmaterialslett.9b00357

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