Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes

Alugubelli, Shanthan R.; Fu, Houqiang; Fu, Kai; Liu, Hanxiao; Zhao, Yuji; McCartney, Martha R.; Ponce, Fernando A.

doi:10.1063/1.5127014

Title: Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes

Authors:

^[1];

^[2];

^[1]; Zhao, Yuji ^[2]; McCartney, Martha R. ^[1];

^[1]

Department of Physics, Arizona State University, Tempe, Arizona 85287, USA
School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA

Publication Date:: 2019-11-11

Sponsoring Org.:: USDOE

OSTI Identifier:: 1573873

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Name: Applied Physics Letters Journal Volume: 115 Journal Issue: 20; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Alugubelli, Shanthan R., Fu, Houqiang, Fu, Kai, Liu, Hanxiao, Zhao, Yuji, McCartney, Martha R., and Ponce, Fernando A. Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes.  United States: N. p., 2019. 
Web.  doi:10.1063/1.5127014.

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                    Alugubelli, Shanthan R., Fu, Houqiang, Fu, Kai, Liu, Hanxiao, Zhao, Yuji, McCartney, Martha R., & Ponce, Fernando A. Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes.  United States.  https://doi.org/10.1063/1.5127014

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                    Alugubelli, Shanthan R., Fu, Houqiang, Fu, Kai, Liu, Hanxiao, Zhao, Yuji, McCartney, Martha R., and Ponce, Fernando A. Mon .  
"Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes".  United States.  https://doi.org/10.1063/1.5127014.

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@article{osti_1573873,

  title        = {Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes},

  author       = {Alugubelli, Shanthan R. and Fu, Houqiang and Fu, Kai and Liu, Hanxiao and Zhao, Yuji and McCartney, Martha R. and Ponce, Fernando A.},

  abstractNote = {},

  doi          = {10.1063/1.5127014},

  journal      = {Applied Physics Letters},

  number       = 20,

  volume       = 115,

  place        = {United States},

  year         = {2019},

  month        = {11}

}

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Title: Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes

Citation Formats

The measurement of electrostatic potentials in core/shell GaN nanowires using off-axis electron holography journal, November 2013

Ion implantation doping and isolation of GaN journal, September 1995

Characteristics of n-GaN After Cl 2 /Ar and Cl 2 /N 2 Inductively Coupled Plasma Etching journal, October 2003

Electrostatic energy profiles at nanometer-scale in group III nitride semiconductors using electron holography journal, November 2010

Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics journal, February 2019

Study of etching-induced damage in GaN by hard X-ray photoelectron spectroscopy journal, June 2011

Two-Dimensional Mapping of the Electrostatic Potential in Transistors by Electron Holography journal, March 1999

Vertical Power p-n Diodes Based on Bulk GaN journal, February 2015

The 2018 GaN power electronics roadmap journal, March 2018

Demonstration of 1.27 kV Etch-Then-Regrow GaN ${p}$ -${n}$ Junctions With Low Leakage for GaN Power Electronics journal, November 2019

Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 chemistry journal, September 2001

Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency journal, December 2017

Characterization of AlGaN∕GaNp-n diodes with selectively regrown n-AlGaN by metal-organic chemical-vapor deposition and its application to GaN-based bipolar transistors journal, June 2005

Doping profiles in low resistive GaN tunnel junctions grown by metalorganic vapor phase epitaxy journal, February 2019

1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy journal, August 2017

High-Voltage Regrown Nonpolar ${m}$ -Plane Vertical p-n Diodes: A Step Toward Future Selective-Area-Doped Power Switches journal, March 2019

Investigation of GaN-on-GaN vertical p - n diode with regrown p -GaN by metalorganic chemical vapor deposition journal, December 2018

High dislocation densities in high efficiency GaN‐based light‐emitting diodes journal, March 1995

Codoping method for the fabrication of low-resistivity wide band-gap semiconductors in p-type GaN, p-type AlN and n-type diamond: prediction versus experiment journal, September 2001

Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers journal, April 2015

Role of carbon in GaN journal, December 2002

Electron Holography: Phase Imaging with Nanometer Resolution journal, August 2007

Hole conductivity and compensation in epitaxial GaN:Mg layers journal, October 2000

Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes journal, January 2018

Depth profiling by SIMS?depth resolution, dynamic range and sensitivity journal, April 1982

The measurement of electrostatic potentials in core/shell GaN nanowires using off-axis electron holography
journal, November 2013

Ion implantation doping and isolation of GaN
journal, September 1995

Characteristics of n-GaN After Cl ₂ /Ar and Cl ₂ /N ₂ Inductively Coupled Plasma Etching
journal, October 2003

Electrostatic energy profiles at nanometer-scale in group III nitride semiconductors using electron holography
journal, November 2010

Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics
journal, February 2019

Study of etching-induced damage in GaN by hard X-ray photoelectron spectroscopy
journal, June 2011

Two-Dimensional Mapping of the Electrostatic Potential in Transistors by Electron Holography
journal, March 1999

Vertical Power p-n Diodes Based on Bulk GaN
journal, February 2015

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journal, March 2018

Demonstration of 1.27 kV Etch-Then-Regrow GaN ${p}$ -${n}$ Junctions With Low Leakage for GaN Power Electronics
journal, November 2019

Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 chemistry
journal, September 2001

Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency
journal, December 2017

Characterization of AlGaN∕GaNp-n diodes with selectively regrown n-AlGaN by metal-organic chemical-vapor deposition and its application to GaN-based bipolar transistors
journal, June 2005

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journal, February 2019

1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy
journal, August 2017

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journal, March 2019

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