This content will become publicly available on November 11, 2020
Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes
- Authors:
- Department of Physics, Arizona State University, Tempe, Arizona 85287, USA
- School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1573873
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Name: Applied Physics Letters Journal Volume: 115 Journal Issue: 20; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Alugubelli, Shanthan R., Fu, Houqiang, Fu, Kai, Liu, Hanxiao, Zhao, Yuji, McCartney, Martha R., and Ponce, Fernando A. Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes. United States: N. p., 2019.
Web. doi:10.1063/1.5127014.
Alugubelli, Shanthan R., Fu, Houqiang, Fu, Kai, Liu, Hanxiao, Zhao, Yuji, McCartney, Martha R., & Ponce, Fernando A. Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes. United States. doi:10.1063/1.5127014.
Alugubelli, Shanthan R., Fu, Houqiang, Fu, Kai, Liu, Hanxiao, Zhao, Yuji, McCartney, Martha R., and Ponce, Fernando A. Mon .
"Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes". United States. doi:10.1063/1.5127014.
@article{osti_1573873,
title = {Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes},
author = {Alugubelli, Shanthan R. and Fu, Houqiang and Fu, Kai and Liu, Hanxiao and Zhao, Yuji and McCartney, Martha R. and Ponce, Fernando A.},
abstractNote = {},
doi = {10.1063/1.5127014},
journal = {Applied Physics Letters},
number = 20,
volume = 115,
place = {United States},
year = {2019},
month = {11}
}
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DOI: 10.1063/1.5127014
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