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Title: Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes

Authors:
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [2]; ORCiD logo [1];  [2];  [1]; ORCiD logo [1]
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  1. Department of Physics, Arizona State University, Tempe, Arizona 85287, USA
  2. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1573873
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 115 Journal Issue: 20; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Alugubelli, Shanthan R., Fu, Houqiang, Fu, Kai, Liu, Hanxiao, Zhao, Yuji, McCartney, Martha R., and Ponce, Fernando A. Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes. United States: N. p., 2019. Web. doi:10.1063/1.5127014.
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Alugubelli, Shanthan R., Fu, Houqiang, Fu, Kai, Liu, Hanxiao, Zhao, Yuji, McCartney, Martha R., & Ponce, Fernando A. Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes. United States. doi:10.1063/1.5127014.
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Alugubelli, Shanthan R., Fu, Houqiang, Fu, Kai, Liu, Hanxiao, Zhao, Yuji, McCartney, Martha R., and Ponce, Fernando A. Mon . "Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes". United States. doi:10.1063/1.5127014.
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@article{osti_1573873,
title = {Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes},
author = {Alugubelli, Shanthan R. and Fu, Houqiang and Fu, Kai and Liu, Hanxiao and Zhao, Yuji and McCartney, Martha R. and Ponce, Fernando A.},
abstractNote = {},
doi = {10.1063/1.5127014},
journal = {Applied Physics Letters},
number = 20,
volume = 115,
place = {United States},
year = {2019},
month = {11}
}
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This content will become publicly available on November 11, 2020
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DOI:  10.1063/1.5127014
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