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Title: Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs

Authors:
ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [2];  [3];  [1]
  1. Department of Materials, University of California, Santa Barbara, California 93106-5050, USA
  2. Department of Applied Physics, KTH Royal Institute of Technology, Electrum 229, 16440 Kista, Sweden
  3. Department of Materials, University of California, Santa Barbara, California 93106-5050, USA, Laboratoire de Physique de la Matière Condensée, CNRS, Ecole Polytechnique, IP Paris, 91128 Palaiseau, France
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1573867
Grant/Contract Number:  
EE0007096
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 126 Journal Issue: 18; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Espenlaub, Andrew C., Myers, Daniel J., Young, Erin C., Marcinkevičius, Saulius, Weisbuch, Claude, and Speck, James S. Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs. United States: N. p., 2019. Web. doi:10.1063/1.5096773.
Espenlaub, Andrew C., Myers, Daniel J., Young, Erin C., Marcinkevičius, Saulius, Weisbuch, Claude, & Speck, James S. Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs. United States. doi:10.1063/1.5096773.
Espenlaub, Andrew C., Myers, Daniel J., Young, Erin C., Marcinkevičius, Saulius, Weisbuch, Claude, and Speck, James S. Thu . "Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs". United States. doi:10.1063/1.5096773.
@article{osti_1573867,
title = {Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs},
author = {Espenlaub, Andrew C. and Myers, Daniel J. and Young, Erin C. and Marcinkevičius, Saulius and Weisbuch, Claude and Speck, James S.},
abstractNote = {},
doi = {10.1063/1.5096773},
journal = {Journal of Applied Physics},
number = 18,
volume = 126,
place = {United States},
year = {2019},
month = {11}
}

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Works referenced in this record:

Impact ionisation and Auger recombination involving traps in semiconductors
journal, April 1980


Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy
journal, November 2016

  • Young, E. C.; Grandjean, N.; Mates, T. E.
  • Applied Physics Letters, Vol. 109, Issue 21
  • DOI: 10.1063/1.4968586

Auger recombination with traps in quantum-well semiconductors
journal, June 1993

  • Haug, A.
  • Applied Physics A Solids and Surfaces, Vol. 56, Issue 6
  • DOI: 10.1007/BF00331406

Photocharging ZnO Nanocrystals: Picosecond Hole Capture, Electron Accumulation, and Auger Recombination
journal, September 2012

  • Cohn, Alicia W.; Janßen, Nils; Mayer, James M.
  • The Journal of Physical Chemistry C, Vol. 116, Issue 38
  • DOI: 10.1021/jp3075942

Auger recombination and impact ionization involving traps in semiconductors
journal, December 1964

  • Landsberg, P. T.; Rhys-Roberts, C.; Lal, P.
  • Proceedings of the Physical Society, Vol. 84, Issue 6
  • DOI: 10.1088/0370-1328/84/6/311

Auger Recombination with Traps
journal, February 1980


Experimental proof of impurity Auger recombination in silicon
journal, December 1985


Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
journal, June 2007

  • Krames, Michael R.; Shchekin, Oleg B.; Mueller-Mach, Regina
  • Journal of Display Technology, Vol. 3, Issue 2, p. 160-175
  • DOI: 10.1109/JDT.2007.895339

Auger Recombination of Electrons via Deep and Shallow Acceptors
journal, November 1985

  • Khalfin, V. B.; Strikha, M. V.; Yassievich, I. N.
  • physica status solidi (b), Vol. 132, Issue 1
  • DOI: 10.1002/pssb.2221320121

Theory of Donor-Acceptor Radiative and Auger Recombination in Simple Semiconductors
journal, September 1973

  • Landsberg, P. T.; Adams, M. J.
  • Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences, Vol. 334, Issue 1599
  • DOI: 10.1098/rspa.1973.0107

Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes
journal, September 2010

  • Dai, Qi; Shan, Qifeng; Wang, Jing
  • Applied Physics Letters, Vol. 97, Issue 13
  • DOI: 10.1063/1.3493654

Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes
journal, July 2010

  • David, Aurélien; Grundmann, Michael J.
  • Applied Physics Letters, Vol. 97, Issue 3
  • DOI: 10.1063/1.3462916

High Internal Quantum Efficiency Blue-Green Light-Emitting Diode with Small Efficiency Droop Fabricated on Low Dislocation Density GaN Substrate
journal, August 2013

  • Sano, Tomotaka; Doi, Tomohiro; Inada, Shunko Albano
  • Japanese Journal of Applied Physics, Vol. 52, Issue 8S
  • DOI: 10.7567/JJAP.52.08JK09

Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes
journal, April 2018

  • Espenlaub, Andrew C.; Alhassan, Abdullah I.; Nakamura, Shuji
  • Applied Physics Letters, Vol. 112, Issue 14
  • DOI: 10.1063/1.5021475

On the Monte Carlo Description of Hot Carrier Effects and Device Characteristics of III-N LEDs
journal, February 2017

  • Kivisaari, Pyry; Sadi, Toufik; Li, Jingrui
  • Advanced Electronic Materials, Vol. 3, Issue 6
  • DOI: 10.1002/aelm.201600494

The first 70 semiconductor Auger processes
journal, November 1978


Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells
journal, November 2015

  • Ivanov, R.; Marcinkevičius, S.; Zhao, Y.
  • Applied Physics Letters, Vol. 107, Issue 21
  • DOI: 10.1063/1.4936386

Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes
journal, August 2018

  • Myers, Daniel J.; Gelžinytė, Kristina; Ho, Wan Ying
  • Journal of Applied Physics, Vol. 124, Issue 5
  • DOI: 10.1063/1.5030208

Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes
journal, February 2008

  • David, Aurélien; Grundmann, Michael J.; Kaeding, John F.
  • Applied Physics Letters, Vol. 92, Issue 5
  • DOI: 10.1063/1.2839305

Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes
journal, September 2014

  • Auf der Maur, M.; Galler, B.; Pietzonka, I.
  • Applied Physics Letters, Vol. 105, Issue 13
  • DOI: 10.1063/1.4896970

Auger Recombination with Deep Impurities in Indirect Band Gap Semiconductors
journal, December 1981


Nonradiative recombination via deep impurity levels in semiconductors: The excitonic Auger mechanism
journal, February 1988


Size-Dependent Trap-Assisted Auger Recombination in Semiconductor Nanocrystals
journal, March 2013

  • Cohn, Alicia W.; Schimpf, Alina M.; Gunthardt, Carolyn E.
  • Nano Letters, Vol. 13, Issue 4
  • DOI: 10.1021/nl400503s

Auger effect involving recombination centres
journal, February 1964

  • Landsberg, P. T.; Evans, D. A.; Rhys-Roberts, C.
  • Proceedings of the Physical Society, Vol. 83, Issue 2
  • DOI: 10.1088/0370-1328/83/2/116

Quantitative Multi-Scale, Multi-Physics Quantum Transport Modeling of GaN-Based Light Emitting Diodes
journal, December 2017

  • Geng, Junzhe; Sarangapani, Prasad; Wang, Kuang-Chung
  • physica status solidi (a), Vol. 215, Issue 9
  • DOI: 10.1002/pssa.201700662

Multiphonon broadening of impact ionisation and Auger recombination involving traps in semiconductors
journal, July 1983