Thick Layered Semiconductor Devices with Water Top-Gates: High On–Off Ratio Field-Effect Transistors and Aqueous Sensors

Huang, Yuan; Sutter, Eli; Wu, Liang Mei; Xu, Hong; Bao, LiHong; Gao, Hong -Jun; Zhou, Xing -Jiang; Sutter, Peter

doi:10.1021/acsami.8b05932

Title: Thick Layered Semiconductor Devices with Water Top-Gates: High On–Off Ratio Field-Effect Transistors and Aqueous Sensors

Journal Article · 20 June 2018 · ACS Applied Materials and Interfaces

DOI: https://doi.org/10.1021/acsami.8b05932 · OSTI ID:1573817

Huang, Yuan ^[1];

^[2]; Wu, Liang Mei ^[3]; Xu, Hong ^[3];

^[3];

^[3]; Zhou, Xing -Jiang ^[3];

^[4]

Chinese Academy of Sciences (CAS), Beijing (China). Inst. of Physics; University of Nebraska-Lincoln
Univ. of Nebraska-Lincoln, Lincoln, NE (United States). Dept. of Mechanical and Materials Engineering
Chinese Academy of Sciences (CAS), Beijing (China). Inst. of Physics
Univ. of Nebraska-Lincoln, Lincoln, NE (United States). Dept. of Electrical and Computer Engineering

Layered semiconductors show promise as channel materials for field-effect transistors (FETs). Usually, such devices incorporate solid back or top gate dielectrics. Here, we explore deionized (DI) water as a solution top-gate for field-effect switching of layered semiconductors including SnS₂, MoS₂, and black phosphorus. The DI water gate is easily fabricated, can sustain rapid bias changes, and its efficient coupling to layered materials provides high on–off current ratios, near-ideal subthreshold swing, and enhanced short-channel behavior even for FETs with thick, bulk-like channels, where such control is difficult to realize with conventional back gating. Screening by the high-k solution gate eliminates hysteresis due to surface and interface trap states and substantially enhances the field-effect mobility. The onset of water electrolysis sets the ultimate limit to DI water gating at large negative gate bias. Measurements in this regime show promise for aqueous sensing, demonstrated here by the amperometric detection of glucose in aqueous solution. In conclusion, DI water gating of layered semiconductors can be harnessed in research on novel materials and devices, and it may with further development find broad applications in microelectronics and sensing.

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Research Organization:: Univ. of Nebraska-Lincoln, Lincoln, NE (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: SC0016343

OSTI ID:: 1573817

Journal Information:: ACS Applied Materials and Interfaces, Journal Name: ACS Applied Materials and Interfaces Journal Issue: 27 Vol. 10; ISSN 1944-8244

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Thick Layered Semiconductor Devices with Water Top-Gates: High On–Off Ratio Field-Effect Transistors and Aqueous Sensors

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