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Title: Wide-voltage-window reversible control of electronic transport in electrolyte-gated epitaxial BaSnO 3

Abstract

The wide gap perovskite semiconductor BaSnO3 has attracted much interest since the discovery of room temperature electron mobility up to 320 cm2 V-1 s-1 in bulk crystals. Motivated by applications in oxide heterostructures, rapid progress has been made with BaSnO3 films, although questions remain regarding transport mechanisms and mobility optimization. Here we report on a detailed study of epitaxial BaSnO3 electric double layer transistors based on ion gel electrolytes, enabling wide-doping-range studies of transport in single films. The work spans an order of magnitude in initial n doping (similar to 1019 to 1020 cm-3, with both oxygen vacancies and La), film thicknesses from 10-50 nm, and measurements of resistance, Hall effect, mobility, and magnetoresistance. In contrast with many oxides, electrolyte gating of BaSnO3 is found to be essentially reversible over an exceptional gate voltage window (approaching +/- 4 V), even at 300 K, supported by negligible structural modification in operando synchrotron x-ray diffraction. We propose that this occurs due to a special situation in BaSnO3, where electrochemical gating via oxygen vacancies is severely limited by their low diffusivity. Wide-range reversible modulation of transport is thus achieved (in both electron accumulation and depletion modes), spanning strongly localized, weakly localized, and metallicmore » regimes. Two-channel conduction analysis is then combined with self-consistent Schrodinger-Poisson and Thomas-Fermi modeling to extract accumulation layer electron densities and mobilities. Electrostatic electron densities approaching 1014 cm-2 are shown to increase room temperature mobility by up to a factor of similar to 24. These results lay the groundwork for future studies of electron-density-dependent phenomena in high mobility BaSnO3, and significantly elucidate oxide electrolyte gating mechanisms.« less

Authors:
 [1];  [1];  [1];  [1];  [1];  [2];  [2];  [3];  [1]; ORCiD logo [1]
  1. Univ. of Minnesota, Minneapolis, MN (United States)
  2. Argonne National Lab. (ANL), Argonne, IL (United States)
  3. Univ. of Minnesota, Minneapolis, MN (United States); Univ. of Chicago, IL (United States). James Franck Inst.
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1573496
Alternate Identifier(s):
OSTI ID: 1530638
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Volume: 3; Journal Issue: 7; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Wang, Helin, Walter, Jeff, Ganguly, Koustav, Yu, Biqiong, Yu, Guichuan, Zhang, Zhan, Zhou, Hua, Fu, Han, Greven, Martin, and Leighton, Chris. Wide-voltage-window reversible control of electronic transport in electrolyte-gated epitaxial BaSnO3. United States: N. p., 2019. Web. doi:10.1103/PhysRevMaterials.3.075001.
Wang, Helin, Walter, Jeff, Ganguly, Koustav, Yu, Biqiong, Yu, Guichuan, Zhang, Zhan, Zhou, Hua, Fu, Han, Greven, Martin, & Leighton, Chris. Wide-voltage-window reversible control of electronic transport in electrolyte-gated epitaxial BaSnO3. United States. doi:https://doi.org/10.1103/PhysRevMaterials.3.075001
Wang, Helin, Walter, Jeff, Ganguly, Koustav, Yu, Biqiong, Yu, Guichuan, Zhang, Zhan, Zhou, Hua, Fu, Han, Greven, Martin, and Leighton, Chris. Tue . "Wide-voltage-window reversible control of electronic transport in electrolyte-gated epitaxial BaSnO3". United States. doi:https://doi.org/10.1103/PhysRevMaterials.3.075001. https://www.osti.gov/servlets/purl/1573496.
@article{osti_1573496,
title = {Wide-voltage-window reversible control of electronic transport in electrolyte-gated epitaxial BaSnO3},
author = {Wang, Helin and Walter, Jeff and Ganguly, Koustav and Yu, Biqiong and Yu, Guichuan and Zhang, Zhan and Zhou, Hua and Fu, Han and Greven, Martin and Leighton, Chris},
abstractNote = {The wide gap perovskite semiconductor BaSnO3 has attracted much interest since the discovery of room temperature electron mobility up to 320 cm2 V-1 s-1 in bulk crystals. Motivated by applications in oxide heterostructures, rapid progress has been made with BaSnO3 films, although questions remain regarding transport mechanisms and mobility optimization. Here we report on a detailed study of epitaxial BaSnO3 electric double layer transistors based on ion gel electrolytes, enabling wide-doping-range studies of transport in single films. The work spans an order of magnitude in initial n doping (similar to 1019 to 1020 cm-3, with both oxygen vacancies and La), film thicknesses from 10-50 nm, and measurements of resistance, Hall effect, mobility, and magnetoresistance. In contrast with many oxides, electrolyte gating of BaSnO3 is found to be essentially reversible over an exceptional gate voltage window (approaching +/- 4 V), even at 300 K, supported by negligible structural modification in operando synchrotron x-ray diffraction. We propose that this occurs due to a special situation in BaSnO3, where electrochemical gating via oxygen vacancies is severely limited by their low diffusivity. Wide-range reversible modulation of transport is thus achieved (in both electron accumulation and depletion modes), spanning strongly localized, weakly localized, and metallic regimes. Two-channel conduction analysis is then combined with self-consistent Schrodinger-Poisson and Thomas-Fermi modeling to extract accumulation layer electron densities and mobilities. Electrostatic electron densities approaching 1014 cm-2 are shown to increase room temperature mobility by up to a factor of similar to 24. These results lay the groundwork for future studies of electron-density-dependent phenomena in high mobility BaSnO3, and significantly elucidate oxide electrolyte gating mechanisms.},
doi = {10.1103/PhysRevMaterials.3.075001},
journal = {Physical Review Materials},
number = 7,
volume = 3,
place = {United States},
year = {2019},
month = {7}
}

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    High-Density Carrier Accumulation in ZnO Field-Effect Transistors Gated by Electric Double Layers of Ionic Liquids
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    • DOI: 10.1063/1.4959960

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    Electrolyte-Gated Transistors for Organic and Printed Electronics
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    High-mobility BaSnO 3 thin-film transistor with HfO 2 gate insulator
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    Atomic mapping of Ruddlesden-Popper faults in transparent conducting BaSnO3-based thin films
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    Giant electrostatic modification of magnetism via electrolyte-gate-induced cluster percolation in L a 1 x S r x Co O 3 δ
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    All-perovskite transparent high mobility field effect using epitaxial BaSnO 3 and LaInO 3
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    Structure and transport in high pressure oxygen sputter-deposited BaSnO 3−δ
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    Low-temperature transport properties of Cd 0.91 Mn 0.09 Te:In and evidence for a magnetic hard gap in the density of states
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    Modulation of the Electrical Properties of VO 2 Nanobeams Using an Ionic Liquid as a Gating Medium
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    Enhanced electron mobility at the two-dimensional metallic surface of BaSnO 3 electric-double-layer transistor at low temperatures
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    Electric-field-induced superconductivity in an insulator
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    Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO 3 /NdGaO 3 heterostructures
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    Depletion Mode MOSFET Using La-Doped BaSnO 3 as a Channel Material
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    The Role of Ionic Liquid Breakdown in the Electrochemical Metallization of VO 2 : An NMR Study of Gating Mechanisms and VO 2 Reduction
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    Crystal-Facet-Dependent Metallization in Electrolyte-Gated Rutile TiO 2 Single Crystals
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    Electric‐Field‐Controlled Phase Transformation in WO 3 Thin Films through Hydrogen Evolution
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    Distinct Substrate Effect on the Reversibility of the Metal-Insulator Transitions in Electrolyte-Gated VO 2 Thin Films
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    Electronic transport in doped SrTiO 3 : Conduction mechanisms and potential applications
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    Wide Bandgap Perovskite Oxides with High Room‐Temperature Electron Mobility
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    Electrostatic Control of the Evolution from a Superconducting Phase to an Insulating Phase in Ultrathin YBa 2 Cu 3 O 7 x Films
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    Microstructure characterization of BaSnO3 thin films on LaAlO3 and PrScO3 substrates from transmission electron microscopy
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    “Cut and Stick” Rubbery Ion Gels as High Capacitance Gate Dielectrics
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    Conduction band edge effective mass of La-doped BaSnO 3
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    Electric-Field Control of the Metal-Insulator Transition in Ultrathin NdNiO3 Films
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    Liquid-Gated High Mobility and Quantum Oscillation of the Two-Dimensional Electron Gas at an Oxide Interface
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    Non-volatile ferroelectric control of room-temperature electrical transport in perovskite oxide semiconductor La:BaSnO 3
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    In operando evidence of deoxygenation in ionic liquid gating of YBa 2 Cu 3 O 7-X
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    LaInO 3 /BaSnO 3 polar interface on MgO substrates
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    Mobility-electron density relation probed via controlled oxygen vacancy doping in epitaxial BaSnO 3
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    Reversible Ferromagnetic Phase Transition in Electrode-Gated Manganites
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    Oxygen Diffusion in SrTiO 3 and Related Perovskite Oxides
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    Strain effects on the band gap and optical properties of perovskite SrSnO 3 and BaSnO 3
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    Adsorption-controlled growth and the influence of stoichiometry on electronic transport in hybrid molecular beam epitaxy-grown BaSnO 3 films
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    First-principles analysis of electron transport in BaSnO 3
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    Defect engineering of BaSnO 3 for high-performance transparent conducting oxide applications
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    High carrier mobility in transparent Ba 1−x La x SnO 3 crystals with a wide band gap
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    High mobility field effect transistor based on BaSnO 3 with Al 2 O 3 gate oxide
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    Adsorption-controlled growth of La-doped BaSnO 3 by molecular-beam epitaxy
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    Electrolyte-based ionic control of functional oxides
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    Suppression of Ionic Liquid Gate-Induced Metallization of SrTiO 3 (001) by Oxygen
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    Suppression of Metal-Insulator Transition in VO2 by Electric Field-Induced Oxygen Vacancy Formation
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