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Title: Wide-voltage-window reversible control of electronic transport in electrolyte-gated epitaxial BaSnO 3

Abstract

The wide gap perovskite semiconductor BaSnO3 has attracted much interest since the discovery of room temperature electron mobility up to 320 cm2 V-1 s-1 in bulk crystals. Motivated by applications in oxide heterostructures, rapid progress has been made with BaSnO3 films, although questions remain regarding transport mechanisms and mobility optimization. Here we report on a detailed study of epitaxial BaSnO3 electric double layer transistors based on ion gel electrolytes, enabling wide-doping-range studies of transport in single films. The work spans an order of magnitude in initial n doping (similar to 1019 to 1020 cm-3, with both oxygen vacancies and La), film thicknesses from 10-50 nm, and measurements of resistance, Hall effect, mobility, and magnetoresistance. In contrast with many oxides, electrolyte gating of BaSnO3 is found to be essentially reversible over an exceptional gate voltage window (approaching +/- 4 V), even at 300 K, supported by negligible structural modification in operando synchrotron x-ray diffraction. We propose that this occurs due to a special situation in BaSnO3, where electrochemical gating via oxygen vacancies is severely limited by their low diffusivity. Wide-range reversible modulation of transport is thus achieved (in both electron accumulation and depletion modes), spanning strongly localized, weakly localized, and metallicmore » regimes. Two-channel conduction analysis is then combined with self-consistent Schrodinger-Poisson and Thomas-Fermi modeling to extract accumulation layer electron densities and mobilities. Electrostatic electron densities approaching 1014 cm-2 are shown to increase room temperature mobility by up to a factor of similar to 24. These results lay the groundwork for future studies of electron-density-dependent phenomena in high mobility BaSnO3, and significantly elucidate oxide electrolyte gating mechanisms.« less

Authors:
 [1];  [1];  [1];  [1];  [1];  [2];  [2];  [3];  [1]; ORCiD logo [1]
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  1. Univ. of Minnesota, Minneapolis, MN (United States)
  2. Argonne National Lab. (ANL), Argonne, IL (United States)
  3. Univ. of Minnesota, Minneapolis, MN (United States); Univ. of Chicago, IL (United States). James Franck Inst.
Publication Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Org.:
National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1573496
Alternate Identifier(s):
OSTI ID: 1530638
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Volume: 3; Journal Issue: 7; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Wang, Helin, Walter, Jeff, Ganguly, Koustav, Yu, Biqiong, Yu, Guichuan, Zhang, Zhan, Zhou, Hua, Fu, Han, Greven, Martin, and Leighton, Chris. Wide-voltage-window reversible control of electronic transport in electrolyte-gated epitaxial BaSnO3. United States: N. p., 2019. Web. doi:10.1103/PhysRevMaterials.3.075001.
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Wang, Helin, Walter, Jeff, Ganguly, Koustav, Yu, Biqiong, Yu, Guichuan, Zhang, Zhan, Zhou, Hua, Fu, Han, Greven, Martin, & Leighton, Chris. Wide-voltage-window reversible control of electronic transport in electrolyte-gated epitaxial BaSnO3. United States. https://doi.org/10.1103/PhysRevMaterials.3.075001
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Wang, Helin, Walter, Jeff, Ganguly, Koustav, Yu, Biqiong, Yu, Guichuan, Zhang, Zhan, Zhou, Hua, Fu, Han, Greven, Martin, and Leighton, Chris. Tue . "Wide-voltage-window reversible control of electronic transport in electrolyte-gated epitaxial BaSnO3". United States. https://doi.org/10.1103/PhysRevMaterials.3.075001. https://www.osti.gov/servlets/purl/1573496.
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@article{osti_1573496,
title = {Wide-voltage-window reversible control of electronic transport in electrolyte-gated epitaxial BaSnO3},
author = {Wang, Helin and Walter, Jeff and Ganguly, Koustav and Yu, Biqiong and Yu, Guichuan and Zhang, Zhan and Zhou, Hua and Fu, Han and Greven, Martin and Leighton, Chris},
abstractNote = {The wide gap perovskite semiconductor BaSnO3 has attracted much interest since the discovery of room temperature electron mobility up to 320 cm2 V-1 s-1 in bulk crystals. Motivated by applications in oxide heterostructures, rapid progress has been made with BaSnO3 films, although questions remain regarding transport mechanisms and mobility optimization. Here we report on a detailed study of epitaxial BaSnO3 electric double layer transistors based on ion gel electrolytes, enabling wide-doping-range studies of transport in single films. The work spans an order of magnitude in initial n doping (similar to 1019 to 1020 cm-3, with both oxygen vacancies and La), film thicknesses from 10-50 nm, and measurements of resistance, Hall effect, mobility, and magnetoresistance. In contrast with many oxides, electrolyte gating of BaSnO3 is found to be essentially reversible over an exceptional gate voltage window (approaching +/- 4 V), even at 300 K, supported by negligible structural modification in operando synchrotron x-ray diffraction. We propose that this occurs due to a special situation in BaSnO3, where electrochemical gating via oxygen vacancies is severely limited by their low diffusivity. Wide-range reversible modulation of transport is thus achieved (in both electron accumulation and depletion modes), spanning strongly localized, weakly localized, and metallic regimes. Two-channel conduction analysis is then combined with self-consistent Schrodinger-Poisson and Thomas-Fermi modeling to extract accumulation layer electron densities and mobilities. Electrostatic electron densities approaching 1014 cm-2 are shown to increase room temperature mobility by up to a factor of similar to 24. These results lay the groundwork for future studies of electron-density-dependent phenomena in high mobility BaSnO3, and significantly elucidate oxide electrolyte gating mechanisms.},
doi = {10.1103/PhysRevMaterials.3.075001},
journal = {Physical Review Materials},
number = 7,
volume = 3,
place = {United States},
year = {Tue Jul 02 00:00:00 EDT 2019},
month = {Tue Jul 02 00:00:00 EDT 2019}
}
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Journal Article:
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https://doi.org/10.1103/PhysRevMaterials.3.075001
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Figures / Tables:

FIG. 1 FIG. 1: Device schematics; structural characterization of BaSnO3-δ epitaxial films. Top view (a) and side view (b) schematics of BaSnO3 electric double layer transistors. Shown are the 5x5 mm2 LaAlO3(001) substrate (white), 1x1 mm2 BaSnO3 (BSO) channel (red), Ti/Au electrodes (gold color), and the ion gel (pale blue). Electrodes 1-4more » are for van der Pauw measurement, while the others are gate electrodes. I, V, and Vg are the injected current, measured voltage, and gate voltage, respectively. Orange and blue circles depict gel cations and anions, while the +/- depict holes/electrons. (c) High-resolution wide angle X-ray diffraction (around the 002 film and substrate reflections) from a LaAlO3(001)/BaSnO3-δ film of thickness d = 13 nm. Inset: Grazing-incidence X-ray reflectivity from the same film. (d) Contact mode atomic force microscopy image of the same film, revealing root-mean-square roughness σRMS = 1.5 Å.« less
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