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Title: Wide-voltage-window reversible control of electronic transport in electrolyte-gated epitaxial BaSnO 3

Abstract

The wide gap perovskite semiconductor BaSnO 3 has attracted much interest since the discovery of room temperature electron mobility up to 320 cm 2 V -1 s -1 in bulk crystals. Motivated by applications in oxide heterostructures, rapid progress has been made with BaSnO 3 films, although questions remain regarding transport mechanisms and mobility optimization. Here we report on a detailed study of epitaxial BaSnO 3 electric double layer transistors based on ion gel electrolytes, enabling wide-doping-range studies of transport in single films. The work spans an order of magnitude in initial n doping (similar to 10 19 to 10 20 cm -3, with both oxygen vacancies and La), film thicknesses from 10-50 nm, and measurements of resistance, Hall effect, mobility, and magnetoresistance. In contrast with many oxides, electrolyte gating of BaSnO 3 is found to be essentially reversible over an exceptional gate voltage window (approaching +/- 4 V), even at 300 K, supported by negligible structural modification in operando synchrotron x-ray diffraction. We propose that this occurs due to a special situation in BaSnO3, where electrochemical gating via oxygen vacancies is severely limited by their low diffusivity. Wide-range reversible modulation of transport is thus achieved (in both electron accumulationmore » and depletion modes), spanning strongly localized, weakly localized, and metallic regimes. Two-channel conduction analysis is then combined with self-consistent Schrodinger-Poisson and Thomas-Fermi modeling to extract accumulation layer electron densities and mobilities. Electrostatic electron densities approaching 10 14 cm -2 are shown to increase room temperature mobility by up to a factor of similar to 24. These results lay the groundwork for future studies of electron-density-dependent phenomena in high mobility BaSnO 3, and significantly elucidate oxide electrolyte gating mechanisms.« less

Authors:
 [1];  [1];  [1];  [1];  [1];  [2];  [2];  [3];  [1]; ORCiD logo [1]
  1. Univ. of Minnesota, Minneapolis, MN (United States)
  2. Argonne National Lab. (ANL), Argonne, IL (United States)
  3. Univ. of Minnesota, Minneapolis, MN (United States); Univ. of Chicago, IL (United States). James Franck Inst.
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1573496
Alternate Identifier(s):
OSTI ID: 1530638
Grant/Contract Number:  
[AC02-06CH11357]
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
[ Journal Volume: 3; Journal Issue: 7]; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Wang, Helin, Walter, Jeff, Ganguly, Koustav, Yu, Biqiong, Yu, Guichuan, Zhang, Zhan, Zhou, Hua, Fu, Han, Greven, Martin, and Leighton, Chris. Wide-voltage-window reversible control of electronic transport in electrolyte-gated epitaxial BaSnO3. United States: N. p., 2019. Web. doi:10.1103/PhysRevMaterials.3.075001.
Wang, Helin, Walter, Jeff, Ganguly, Koustav, Yu, Biqiong, Yu, Guichuan, Zhang, Zhan, Zhou, Hua, Fu, Han, Greven, Martin, & Leighton, Chris. Wide-voltage-window reversible control of electronic transport in electrolyte-gated epitaxial BaSnO3. United States. doi:10.1103/PhysRevMaterials.3.075001.
Wang, Helin, Walter, Jeff, Ganguly, Koustav, Yu, Biqiong, Yu, Guichuan, Zhang, Zhan, Zhou, Hua, Fu, Han, Greven, Martin, and Leighton, Chris. Tue . "Wide-voltage-window reversible control of electronic transport in electrolyte-gated epitaxial BaSnO3". United States. doi:10.1103/PhysRevMaterials.3.075001.
@article{osti_1573496,
title = {Wide-voltage-window reversible control of electronic transport in electrolyte-gated epitaxial BaSnO3},
author = {Wang, Helin and Walter, Jeff and Ganguly, Koustav and Yu, Biqiong and Yu, Guichuan and Zhang, Zhan and Zhou, Hua and Fu, Han and Greven, Martin and Leighton, Chris},
abstractNote = {The wide gap perovskite semiconductor BaSnO3 has attracted much interest since the discovery of room temperature electron mobility up to 320 cm2 V-1 s-1 in bulk crystals. Motivated by applications in oxide heterostructures, rapid progress has been made with BaSnO3 films, although questions remain regarding transport mechanisms and mobility optimization. Here we report on a detailed study of epitaxial BaSnO3 electric double layer transistors based on ion gel electrolytes, enabling wide-doping-range studies of transport in single films. The work spans an order of magnitude in initial n doping (similar to 1019 to 1020 cm-3, with both oxygen vacancies and La), film thicknesses from 10-50 nm, and measurements of resistance, Hall effect, mobility, and magnetoresistance. In contrast with many oxides, electrolyte gating of BaSnO3 is found to be essentially reversible over an exceptional gate voltage window (approaching +/- 4 V), even at 300 K, supported by negligible structural modification in operando synchrotron x-ray diffraction. We propose that this occurs due to a special situation in BaSnO3, where electrochemical gating via oxygen vacancies is severely limited by their low diffusivity. Wide-range reversible modulation of transport is thus achieved (in both electron accumulation and depletion modes), spanning strongly localized, weakly localized, and metallic regimes. Two-channel conduction analysis is then combined with self-consistent Schrodinger-Poisson and Thomas-Fermi modeling to extract accumulation layer electron densities and mobilities. Electrostatic electron densities approaching 1014 cm-2 are shown to increase room temperature mobility by up to a factor of similar to 24. These results lay the groundwork for future studies of electron-density-dependent phenomena in high mobility BaSnO3, and significantly elucidate oxide electrolyte gating mechanisms.},
doi = {10.1103/PhysRevMaterials.3.075001},
journal = {Physical Review Materials},
number = [7],
volume = [3],
place = {United States},
year = {2019},
month = {7}
}

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    Works referencing / citing this record:

    High-Density Carrier Accumulation in ZnO Field-Effect Transistors Gated by Electric Double Layers of Ionic Liquids
    journal, April 2009

    • Yuan, Hongtao; Shimotani, Hidekazu; Tsukazaki, Atsushi
    • Advanced Functional Materials, Vol. 19, Issue 7
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    Electric-Field Control of the Metal-Insulator Transition in Ultrathin NdNiO3 Films
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    • DOI: 10.1002/adma.201200950

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    • DOI: 10.1002/adma.201607054

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    journal, February 2019


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    • Nakano, Masaki; Okuyama, Daisuke; Shibuya, Keisuke
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    • Mizoguchi, Hiroshi; Chen, Ping; Boolchand, Punit
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    • DOI: 10.1021/jacs.8b09513

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    • DOI: 10.1021/nl402088f

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    • DOI: 10.1021/nl504314c

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    • Lu, Nianpeng; Zhang, Pengfei; Zhang, Qinghua
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    • DOI: 10.1038/nature22389

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    • Prakash, Abhinav; Xu, Peng; Faghaninia, Alireza
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    • DOI: 10.1038/ncomms15167

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    • Nature Materials, Vol. 7, Issue 11, p. 855-858
    • DOI: 10.1038/nmat2298

    Oxygen vacancy-assisted recovery process for increasing electron mobility in n-type BaSnO3 epitaxial thin films
    journal, April 2018


    Insulator to metal transition in WO3 induced by electrolyte gating
    journal, July 2017


    Electrolyte-based ionic control of functional oxides
    journal, December 2018


    Microstructure characterization of BaSnO3 thin films on LaAlO3 and PrScO3 substrates from transmission electron microscopy
    journal, July 2018


    Tuning the metal-insulator crossover and magnetism in SrRuO3 by ionic gating
    journal, October 2014

    • Yi, Hee Taek; Gao, Bin; Xie, Wei
    • Scientific Reports, Vol. 4, Issue 1
    • DOI: 10.1038/srep06604

    Atomic mapping of Ruddlesden-Popper faults in transparent conducting BaSnO3-based thin films
    journal, November 2015

    • Wang, W. Y.; Tang, Y. L.; Zhu, Y. L.
    • Scientific Reports, Vol. 5, Issue 1
    • DOI: 10.1038/srep16097

    Self‐consistent solution of the Poisson and Schrödinger equations in accumulated semiconductor‐insulator interfaces
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