Scalable Synthesis of the Transparent Conductive Oxide SrVO3
Abstract
The correlated metal SrVO3 is an attractive earth-abundant transparent conducting oxide (TCO), a critical component of many optoelectronic and renewable energy devices. A key challenge is to synthesize films with low resistivity, due to the prevalence of defects that cause electron scattering. In addition to the material's promise as a TCO, its interesting correlated-electron physics is often obscured by a high defect concentration, which inhibits its further development into new types of devices. A route to synthesize low-defect SrVO3 films by scalable, industry-compatible molecular beam epitaxy (MBE) is demonstrated. The resulting films consistently exhibit a residual resistivity ratio in the excess of 10 and room temperature resistivity as low as 32 µΩ cm, an indication of their high quality and potential for applications. Analysis of the structural and electronic properties of SrVO3 films provides insights that are applicable to other conductive oxides, and highlights a route for further improvement in their quality and low temperature performance. MBE is the only growth method that allows atomically abrupt epitaxial interfaces between oxides and semiconductors such as Si and GaAs. Such interfaces are essential for efficient charge transport that is at the heart of the performance of most optoelectronic and solar devices.
- Authors:
-
- Technion-Israel Inst. of Technology, Haifa (Israel)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Publication Date:
- Research Org.:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1573478
- Alternate Identifier(s):
- OSTI ID: 1571544
- Report Number(s):
- BNL-212308-2019-JAAM
Journal ID: ISSN 2199-160X
- Grant/Contract Number:
- SC0012704; DESC0012704
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Electronic Materials
- Additional Journal Information:
- Journal Volume: 6; Journal Issue: 1; Journal ID: ISSN 2199-160X
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; transparent conductive oxides; correlated metals; strontium vanadates; epitaxial oxides; functional oxides
Citation Formats
Shoham, Lishai, Baskin, Maria, Han, Myung‐Geun, Zhu, Yimei, and Kornblum, Lior. Scalable Synthesis of the Transparent Conductive Oxide SrVO3. United States: N. p., 2019.
Web. doi:10.1002/aelm.201900584.
Shoham, Lishai, Baskin, Maria, Han, Myung‐Geun, Zhu, Yimei, & Kornblum, Lior. Scalable Synthesis of the Transparent Conductive Oxide SrVO3. United States. https://doi.org/10.1002/aelm.201900584
Shoham, Lishai, Baskin, Maria, Han, Myung‐Geun, Zhu, Yimei, and Kornblum, Lior. Wed .
"Scalable Synthesis of the Transparent Conductive Oxide SrVO3". United States. https://doi.org/10.1002/aelm.201900584. https://www.osti.gov/servlets/purl/1573478.
@article{osti_1573478,
title = {Scalable Synthesis of the Transparent Conductive Oxide SrVO3},
author = {Shoham, Lishai and Baskin, Maria and Han, Myung‐Geun and Zhu, Yimei and Kornblum, Lior},
abstractNote = {The correlated metal SrVO3 is an attractive earth-abundant transparent conducting oxide (TCO), a critical component of many optoelectronic and renewable energy devices. A key challenge is to synthesize films with low resistivity, due to the prevalence of defects that cause electron scattering. In addition to the material's promise as a TCO, its interesting correlated-electron physics is often obscured by a high defect concentration, which inhibits its further development into new types of devices. A route to synthesize low-defect SrVO3 films by scalable, industry-compatible molecular beam epitaxy (MBE) is demonstrated. The resulting films consistently exhibit a residual resistivity ratio in the excess of 10 and room temperature resistivity as low as 32 µΩ cm, an indication of their high quality and potential for applications. Analysis of the structural and electronic properties of SrVO3 films provides insights that are applicable to other conductive oxides, and highlights a route for further improvement in their quality and low temperature performance. MBE is the only growth method that allows atomically abrupt epitaxial interfaces between oxides and semiconductors such as Si and GaAs. Such interfaces are essential for efficient charge transport that is at the heart of the performance of most optoelectronic and solar devices.},
doi = {10.1002/aelm.201900584},
journal = {Advanced Electronic Materials},
number = 1,
volume = 6,
place = {United States},
year = {2019},
month = {10}
}
Figures / Tables:

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