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Title: Scalable Synthesis of the Transparent Conductive Oxide SrVO3

Abstract

The correlated metal SrVO3 is an attractive earth-abundant transparent conducting oxide (TCO), a critical component of many optoelectronic and renewable energy devices. A key challenge is to synthesize films with low resistivity, due to the prevalence of defects that cause electron scattering. In addition to the material's promise as a TCO, its interesting correlated-electron physics is often obscured by a high defect concentration, which inhibits its further development into new types of devices. A route to synthesize low-defect SrVO3 films by scalable, industry-compatible molecular beam epitaxy (MBE) is demonstrated. The resulting films consistently exhibit a residual resistivity ratio in the excess of 10 and room temperature resistivity as low as 32 µΩ cm, an indication of their high quality and potential for applications. Analysis of the structural and electronic properties of SrVO3 films provides insights that are applicable to other conductive oxides, and highlights a route for further improvement in their quality and low temperature performance. MBE is the only growth method that allows atomically abrupt epitaxial interfaces between oxides and semiconductors such as Si and GaAs. Such interfaces are essential for efficient charge transport that is at the heart of the performance of most optoelectronic and solar devices.

Authors:
 [1];  [1]; ORCiD logo [2];  [2]; ORCiD logo [1]
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  1. Technion-Israel Inst. of Technology, Haifa (Israel)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1573478
Alternate Identifier(s):
OSTI ID: 1571544
Report Number(s):
BNL-212308-2019-JAAM
Journal ID: ISSN 2199-160X
Grant/Contract Number:  
SC0012704; DESC0012704
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Electronic Materials
Additional Journal Information:
Journal Volume: 6; Journal Issue: 1; Journal ID: ISSN 2199-160X
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; transparent conductive oxides; correlated metals; strontium vanadates; epitaxial oxides; functional oxides

Citation Formats

Shoham, Lishai, Baskin, Maria, Han, Myung‐Geun, Zhu, Yimei, and Kornblum, Lior. Scalable Synthesis of the Transparent Conductive Oxide SrVO3. United States: N. p., 2019. Web. doi:10.1002/aelm.201900584.
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Shoham, Lishai, Baskin, Maria, Han, Myung‐Geun, Zhu, Yimei, & Kornblum, Lior. Scalable Synthesis of the Transparent Conductive Oxide SrVO3. United States. https://doi.org/10.1002/aelm.201900584
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Shoham, Lishai, Baskin, Maria, Han, Myung‐Geun, Zhu, Yimei, and Kornblum, Lior. Wed . "Scalable Synthesis of the Transparent Conductive Oxide SrVO3". United States. https://doi.org/10.1002/aelm.201900584. https://www.osti.gov/servlets/purl/1573478.
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@article{osti_1573478,
title = {Scalable Synthesis of the Transparent Conductive Oxide SrVO3},
author = {Shoham, Lishai and Baskin, Maria and Han, Myung‐Geun and Zhu, Yimei and Kornblum, Lior},
abstractNote = {The correlated metal SrVO3 is an attractive earth-abundant transparent conducting oxide (TCO), a critical component of many optoelectronic and renewable energy devices. A key challenge is to synthesize films with low resistivity, due to the prevalence of defects that cause electron scattering. In addition to the material's promise as a TCO, its interesting correlated-electron physics is often obscured by a high defect concentration, which inhibits its further development into new types of devices. A route to synthesize low-defect SrVO3 films by scalable, industry-compatible molecular beam epitaxy (MBE) is demonstrated. The resulting films consistently exhibit a residual resistivity ratio in the excess of 10 and room temperature resistivity as low as 32 µΩ cm, an indication of their high quality and potential for applications. Analysis of the structural and electronic properties of SrVO3 films provides insights that are applicable to other conductive oxides, and highlights a route for further improvement in their quality and low temperature performance. MBE is the only growth method that allows atomically abrupt epitaxial interfaces between oxides and semiconductors such as Si and GaAs. Such interfaces are essential for efficient charge transport that is at the heart of the performance of most optoelectronic and solar devices.},
doi = {10.1002/aelm.201900584},
journal = {Advanced Electronic Materials},
number = 1,
volume = 6,
place = {United States},
year = {2019},
month = {10}
}
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Journal Article:
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Publisher's Version of Record
https://doi.org/10.1002/aelm.201900584
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Figures / Tables:

Figure 1 Figure 1: Structural properties of epitaxial SVO films. (a) X-ray diffraction patterns around the (002) Bragg reflection of SVO films grown on LSAT. Varying QCM Sr:V reading ratios are presented grown at 900 and 1000 °C. (b) The relation between the QCM Sr:V reading and the out-of-plane lattice parameter. (c)more » Reciprocal space map of the sample with Sr:V reading ratio of 1.1, around the (013) reflection, showing a fully strained SVO film on the LSAT substrate. (d) Cross sectional HAADF STEM micrograph of SVO/LSAT taken along the [010] direction of the sample with Sr:V reading ratio of 1.1 (same as panel c).« less
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