Scalable Synthesis of the Transparent Conductive Oxide SrVO3

doi:10.1002/aelm.201900584

Title: Scalable Synthesis of the Transparent Conductive Oxide SrVO₃

Abstract

The correlated metal SrVO₃ is an attractive earth-abundant transparent conducting oxide (TCO), a critical component of many optoelectronic and renewable energy devices. A key challenge is to synthesize films with low resistivity, due to the prevalence of defects that cause electron scattering. In addition to the material's promise as a TCO, its interesting correlated-electron physics is often obscured by a high defect concentration, which inhibits its further development into new types of devices. A route to synthesize low-defect SrVO₃ films by scalable, industry-compatible molecular beam epitaxy (MBE) is demonstrated. The resulting films consistently exhibit a residual resistivity ratio in the excess of 10 and room temperature resistivity as low as 32 µΩ cm, an indication of their high quality and potential for applications. Analysis of the structural and electronic properties of SrVO₃ films provides insights that are applicable to other conductive oxides, and highlights a route for further improvement in their quality and low temperature performance. MBE is the only growth method that allows atomically abrupt epitaxial interfaces between oxides and semiconductors such as Si and GaAs. Such interfaces are essential for efficient charge transport that is at the heart of the performance of most optoelectronic and solar devices.

Authors:

Shoham, Lishai ^[1]; Baskin, Maria ^[1];

^[2]; Zhu, Yimei ^[2];

^[1]

Technion-Israel Inst. of Technology, Haifa (Israel)
Brookhaven National Lab. (BNL), Upton, NY (United States)

Publication Date:: 2019-10-23

Research Org.:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1573478

Alternate Identifier(s):: OSTI ID: 1571544

Report Number(s):: BNL-212308-2019-JAAM
Journal ID: ISSN 2199-160X

Grant/Contract Number:: SC0012704; DESC0012704

Resource Type:: Accepted Manuscript

Journal Name:: Advanced Electronic Materials

Additional Journal Information:: Journal Volume: 6; Journal Issue: 1; Journal ID: ISSN 2199-160X

Publisher:: Wiley

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; transparent conductive oxides; correlated metals; strontium vanadates; epitaxial oxides; functional oxides

Citation Formats


                    Shoham, Lishai, Baskin, Maria, Han, Myung‐Geun, Zhu, Yimei, and Kornblum, Lior. Scalable Synthesis of the Transparent Conductive Oxide SrVO3.  United States: N. p., 2019. 
        Web.  doi:10.1002/aelm.201900584.

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                    Shoham, Lishai, Baskin, Maria, Han, Myung‐Geun, Zhu, Yimei, & Kornblum, Lior. Scalable Synthesis of the Transparent Conductive Oxide SrVO3.  United States.  doi:10.1002/aelm.201900584.

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                    Shoham, Lishai, Baskin, Maria, Han, Myung‐Geun, Zhu, Yimei, and Kornblum, Lior. Wed .  
        "Scalable Synthesis of the Transparent Conductive Oxide SrVO3".  United States.  doi:10.1002/aelm.201900584.  https://www.osti.gov/servlets/purl/1573478.

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@article{osti_1573478,

  title        = {Scalable Synthesis of the Transparent Conductive Oxide SrVO3},

  author       = {Shoham, Lishai and Baskin, Maria and Han, Myung‐Geun and Zhu, Yimei and Kornblum, Lior},

  abstractNote = {The correlated metal SrVO3 is an attractive earth-abundant transparent conducting oxide (TCO), a critical component of many optoelectronic and renewable energy devices. A key challenge is to synthesize films with low resistivity, due to the prevalence of defects that cause electron scattering. In addition to the material's promise as a TCO, its interesting correlated-electron physics is often obscured by a high defect concentration, which inhibits its further development into new types of devices. A route to synthesize low-defect SrVO3 films by scalable, industry-compatible molecular beam epitaxy (MBE) is demonstrated. The resulting films consistently exhibit a residual resistivity ratio in the excess of 10 and room temperature resistivity as low as 32 µΩ cm, an indication of their high quality and potential for applications. Analysis of the structural and electronic properties of SrVO3 films provides insights that are applicable to other conductive oxides, and highlights a route for further improvement in their quality and low temperature performance. MBE is the only growth method that allows atomically abrupt epitaxial interfaces between oxides and semiconductors such as Si and GaAs. Such interfaces are essential for efficient charge transport that is at the heart of the performance of most optoelectronic and solar devices.},

  doi          = {10.1002/aelm.201900584},

  journal      = {Advanced Electronic Materials},

  number       = 1,

  volume       = 6,

  place        = {United States},

  year         = {2019},

  month        = {10}

}

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Title: Scalable Synthesis of the Transparent Conductive Oxide SrVO3

Abstract

Citation Formats

A silicon-based photocathode for water reduction with an epitaxial SrTiO3 protection layer and a nanostructured catalyst journal, December 2014

Critical Behavior of Metal-Insulator Transition in La 1 − x Sr x VO 3 journal, December 2000

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Frontiers in the Growth of Complex Oxide Thin Films: Past, Present, and Future of Hybrid MBE journal, December 2017

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Improving the structural quality and electrical resistance of SrTiO 3 thin films on Si (001) via a two-step anneal journal, January 2016

Solar hydrogen production using epitaxial SrTiO 3 on a GaAs photovoltaic journal, January 2017

Two-Dimensional Mott Insulators in SrVO 3 Ultrathin Films journal, June 2014

A heterojunction modulation-doped Mott transistor journal, October 2011

Accessing a growth window for SrVO3 thin films journal, October 2015

Growth of SrVO 3 thin films by hybrid molecular beam epitaxy journal, November 2015

Transport at the Epitaxial Interface between Germanium and Functional Oxides journal, October 2015

Metal-insulator transitions journal, October 1998

Molecular beam epitaxy of SrTiO3 with a growth window journal, July 2009

Adsorption-controlled growth and the influence of stoichiometry on electronic transport in hybrid molecular beam epitaxy-grown BaSnO 3 films journal, January 2017

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Synthesis science of SrRuO 3 and CaRuO 3 epitaxial films with high residual resistivity ratios journal, April 2018

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Taming the Mott Transition for a Novel Mott Transistor journal, August 2008

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Title: Scalable Synthesis of the Transparent Conductive Oxide SrVO₃

A silicon-based photocathode for water reduction with an epitaxial SrTiO3 protection layer and a nanostructured catalyst
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Critical Behavior of Metal-Insulator Transition in ${La}_{1 - x} {Sr}_{x} {VO}_{3}$
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Hybrid molecular beam epitaxy for the growth of stoichiometric BaSnO ₃
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Frontiers in the Growth of Complex Oxide Thin Films: Past, Present, and Future of Hybrid MBE
journal, December 2017

Metals amassing transparency
journal, December 2015

Growth of homoepitaxial SrTiO3 thin films by molecular-beam epitaxy
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Growth of SrTiO ₃ on Si(001) by hybrid molecular beam epitaxy : Growth of SrTiO
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Complex plume stoichiometry during pulsed laser deposition of SrVO ₃ at low oxygen pressures
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Improving the structural quality and electrical resistance of SrTiO ₃ thin films on Si (001) via a two-step anneal
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Solar hydrogen production using epitaxial SrTiO ₃ on a GaAs photovoltaic
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Two-Dimensional Mott Insulators in SrVO ₃ Ultrathin Films
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A heterojunction modulation-doped Mott transistor
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Accessing a growth window for SrVO3 thin films
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Transport at the Epitaxial Interface between Germanium and Functional Oxides
journal, October 2015

Metal-insulator transitions
journal, October 1998

Molecular beam epitaxy of SrTiO3 with a growth window
journal, July 2009

Adsorption-controlled growth and the influence of stoichiometry on electronic transport in hybrid molecular beam epitaxy-grown BaSnO ₃ films
journal, January 2017

Evolution des propriétés cristallographiques, electriques et magnétiques au sein du système La1−xSrxVO3
journal, October 1975

Correlated metals as transparent conductors
journal, December 2015

Self-regulated growth of LaVO3 thin films by hybrid molecular beam epitaxy
journal, June 2015

Synthesis science of SrRuO ₃ and CaRuO ₃ epitaxial films with high residual resistivity ratios
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High Carrier Mobility, Electrical Conductivity, and Optical Transmittance in Epitaxial SrVO ₃ Thin Films
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Oxide heterostructures for high density 2D electron gases on GaAs
journal, January 2018

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Enhanced electrical and magnetic properties in La _0.7 Sr _0.3 MnO ₃ thin films deposited on CaTiO ₃ -buffered silicon substrates
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Thermoelectric response in the incoherent transport region near Mott transition: The case study of La $_{1 - x}$ Sr $_{x}$ VO $_{3}$
journal, April 2011

Multi-stage pulsed laser deposition of high quality epitaxial ultra-thin SrTiO3 on Si substrates
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Chemical and electronic structure analysis of a SrTiO3 (001)/p-Ge (001) hydrogen evolution photocathode
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Etude des proprietes magnetiques, electriques et optiques des phases de structure perovskite SrVO2.90 et SrVO3
journal, July 1975

Highly Conductive SrVO ₃ as a Bottom Electrode for Functional Perovskite Oxides
journal, May 2013

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