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Title: Pressure-induced semiconductor-to-metal phase transition of a charge-ordered indium halide perovskite

Abstract

Phase transitions in halide perovskites triggered by external stimuli generate significantly different material properties, providing a great opportunity for broad applications. Here, we demonstrate an In-based, charge-ordered (In+/In3+) inorganic halide perovskite with the composition of Cs2In(I)In(III)Cl6in which a pressure-driven semiconductor-to-metal phase transition exists. The single crystals, synthesized via a solid-state reaction method, crystallize in a distorted perovskite structure with space groupI4/mwitha= 17.2604(12) Å,c= 11.0113(16) Å if both the strong reflections and superstructures are considered. The supercell was further confirmed by rotation electron diffraction measurement. The pressure-induced semiconductor-to-metal phase transition was demonstrated by high-pressure Raman and absorbance spectroscopies and was consistent with theoretical modeling. This type of charge-ordered inorganic halide perovskite with a pressure-induced semiconductor-to-metal phase transition may inspire a range of potential applications.

Authors:
; ; ; ; ; ORCiD logo; ORCiD logo; ; ; ; ; ; ; ; ; ORCiD logo; ;
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1573106
Alternate Identifier(s):
OSTI ID: 1597526; OSTI ID: 1599818
Grant/Contract Number:  
AC02-05CH11231; AC02-76SF00515
Resource Type:
Published Article
Journal Name:
Proceedings of the National Academy of Sciences of the United States of America
Additional Journal Information:
Journal Name: Proceedings of the National Academy of Sciences of the United States of America Journal Volume: 116 Journal Issue: 47; Journal ID: ISSN 0027-8424
Publisher:
National Academy of Sciences
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; charge ordered; inorganic; halide perovskite; phase transition; high pressure

Citation Formats

Lin, Jia, Chen, Hong, Gao, Yang, Cai, Yao, Jin, Jianbo, Etman, Ahmed S., Kang, Joohoon, Lei, Teng, Lin, Zhenni, Folgueras, Maria C., Quan, Li Na, Kong, Qiao, Sherburne, Matthew, Asta, Mark, Sun, Junliang, Toney, Michael F., Wu, Junqiao, and Yang, Peidong. Pressure-induced semiconductor-to-metal phase transition of a charge-ordered indium halide perovskite. United States: N. p., 2019. Web. doi:10.1073/pnas.1907576116.
Lin, Jia, Chen, Hong, Gao, Yang, Cai, Yao, Jin, Jianbo, Etman, Ahmed S., Kang, Joohoon, Lei, Teng, Lin, Zhenni, Folgueras, Maria C., Quan, Li Na, Kong, Qiao, Sherburne, Matthew, Asta, Mark, Sun, Junliang, Toney, Michael F., Wu, Junqiao, & Yang, Peidong. Pressure-induced semiconductor-to-metal phase transition of a charge-ordered indium halide perovskite. United States. doi:10.1073/pnas.1907576116.
Lin, Jia, Chen, Hong, Gao, Yang, Cai, Yao, Jin, Jianbo, Etman, Ahmed S., Kang, Joohoon, Lei, Teng, Lin, Zhenni, Folgueras, Maria C., Quan, Li Na, Kong, Qiao, Sherburne, Matthew, Asta, Mark, Sun, Junliang, Toney, Michael F., Wu, Junqiao, and Yang, Peidong. Mon . "Pressure-induced semiconductor-to-metal phase transition of a charge-ordered indium halide perovskite". United States. doi:10.1073/pnas.1907576116.
@article{osti_1573106,
title = {Pressure-induced semiconductor-to-metal phase transition of a charge-ordered indium halide perovskite},
author = {Lin, Jia and Chen, Hong and Gao, Yang and Cai, Yao and Jin, Jianbo and Etman, Ahmed S. and Kang, Joohoon and Lei, Teng and Lin, Zhenni and Folgueras, Maria C. and Quan, Li Na and Kong, Qiao and Sherburne, Matthew and Asta, Mark and Sun, Junliang and Toney, Michael F. and Wu, Junqiao and Yang, Peidong},
abstractNote = {Phase transitions in halide perovskites triggered by external stimuli generate significantly different material properties, providing a great opportunity for broad applications. Here, we demonstrate an In-based, charge-ordered (In+/In3+) inorganic halide perovskite with the composition of Cs2In(I)In(III)Cl6in which a pressure-driven semiconductor-to-metal phase transition exists. The single crystals, synthesized via a solid-state reaction method, crystallize in a distorted perovskite structure with space groupI4/mwitha= 17.2604(12) Å,c= 11.0113(16) Å if both the strong reflections and superstructures are considered. The supercell was further confirmed by rotation electron diffraction measurement. The pressure-induced semiconductor-to-metal phase transition was demonstrated by high-pressure Raman and absorbance spectroscopies and was consistent with theoretical modeling. This type of charge-ordered inorganic halide perovskite with a pressure-induced semiconductor-to-metal phase transition may inspire a range of potential applications.},
doi = {10.1073/pnas.1907576116},
journal = {Proceedings of the National Academy of Sciences of the United States of America},
number = 47,
volume = 116,
place = {United States},
year = {2019},
month = {11}
}

Journal Article:
Free Publicly Available Full Text
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DOI: 10.1073/pnas.1907576116

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