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Title: Ferroelectric properties of ion-irradiated bismuth ferrite layers grown via molecular-beam epitaxy

Authors:
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [3];  [1]; ORCiD logo [4];  [1]; ORCiD logo [5];  [6]; ORCiD logo [7]; ORCiD logo [8]
  1. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
  2. Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, California 94720, USA
  3. Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USA
  4. Physics Department, Cornell University, Ithaca, New York 14853, USA
  5. Peter Grünberg Institute (PGI-9) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
  6. Physics Department, Cornell University, Ithaca, New York 14853, USA, Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA
  7. Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, California 94720, USA, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  8. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA, Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1572733
Grant/Contract Number:  
AC02-05-CH11231
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
APL Materials
Additional Journal Information:
Journal Name: APL Materials Journal Volume: 7 Journal Issue: 11; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Mei, Antonio B., Saremi, Sahar, Miao, Ludi, Barone, Matthew, Tang, Yongjian, Zeledon, Cyrus, Schubert, Jürgen, Ralph, Daniel C., Martin, Lane W., and Schlom, Darrell G. Ferroelectric properties of ion-irradiated bismuth ferrite layers grown via molecular-beam epitaxy. United States: N. p., 2019. Web. doi:10.1063/1.5125809.
Mei, Antonio B., Saremi, Sahar, Miao, Ludi, Barone, Matthew, Tang, Yongjian, Zeledon, Cyrus, Schubert, Jürgen, Ralph, Daniel C., Martin, Lane W., & Schlom, Darrell G. Ferroelectric properties of ion-irradiated bismuth ferrite layers grown via molecular-beam epitaxy. United States. doi:10.1063/1.5125809.
Mei, Antonio B., Saremi, Sahar, Miao, Ludi, Barone, Matthew, Tang, Yongjian, Zeledon, Cyrus, Schubert, Jürgen, Ralph, Daniel C., Martin, Lane W., and Schlom, Darrell G. Fri . "Ferroelectric properties of ion-irradiated bismuth ferrite layers grown via molecular-beam epitaxy". United States. doi:10.1063/1.5125809.
@article{osti_1572733,
title = {Ferroelectric properties of ion-irradiated bismuth ferrite layers grown via molecular-beam epitaxy},
author = {Mei, Antonio B. and Saremi, Sahar and Miao, Ludi and Barone, Matthew and Tang, Yongjian and Zeledon, Cyrus and Schubert, Jürgen and Ralph, Daniel C. and Martin, Lane W. and Schlom, Darrell G.},
abstractNote = {},
doi = {10.1063/1.5125809},
journal = {APL Materials},
number = 11,
volume = 7,
place = {United States},
year = {2019},
month = {11}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.5125809

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Works referenced in this record:

Electric-field control of local ferromagnetism using a magnetoelectric multiferroic
journal, April 2008

  • Chu, Ying-Hao; Martin, Lane W.; Holcomb, Mikel B.
  • Nature Materials, Vol. 7, Issue 6, p. 478-482
  • DOI: 10.1038/nmat2184

Epitaxial BiFeO3 Multiferroic Thin Film Heterostructures
journal, March 2003