Transfer of Graphene with Protective Oxide Layers

Grebel, Haim; Stan, Liliana; Sumant, Anirudha; Liu, Yuzi; Gosztola, David; Ocola, Leonidas; Fisher, Brandon

doi:10.3390/chemengineering2040058

Title: Transfer of Graphene with Protective Oxide Layers

Abstract

Transfer of graphene, grown by chemical vapor deposition (CVD), to a substrate of choice, typically involves the deposition of a polymeric layer (for example, poly(methyl methacrylate) (PMMA), or polydimethylsiloxane, PDMS). These polymers are quite hard to remove without leaving some residues behind. One method to improve the graphene transfer is to coat the graphene with a thin protective oxide layer, followed by the deposition of a very thin polymer layer on top of the oxide layer (much thinner than the usual thickness), followed by a more aggressive polymeric removal method, thus leaving the graphene intact. At the same time, having an oxide layer on graphene may serve applications, such as channeled transistors or sensing devices. Here, we study the transfer of graphene with a protective thin oxide layer grown by atomic layer deposition (ALD). We follow the transfer process from the graphene growth stage through oxide deposition until completion. We report on the nucleation growth process of oxides on graphene, their resultant strain and their optical transmission.

Authors:

Grebel, Haim ^[1]; Stan, Liliana ^[2]; Sumant, Anirudha ^[2]; Liu, Yuzi ^[2];

^[2]; Ocola, Leonidas ^[2]; Fisher, Brandon ^[2]

New Jersey Inst. of Technology (NJIT), Newark, NJ (United States)
Argonne National Lab. (ANL), Argonne, IL (United States)

Publication Date:: Mon Dec 03 00:00:00 EST 2018

Research Org.:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1572724

Grant/Contract Number:: AC02-06CH11357

Resource Type:: Accepted Manuscript

Journal Name:: ChemEngineering

Additional Journal Information:: Journal Volume: 2; Journal Issue: 4; Journal ID: ISSN 2305-7084

Publisher:: MDPI

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; Atomic Layer Deposition (ALD); Oxide layer deposition on graphene; Raman spectroscopy of graphene; Thin oxide films; Transfer of 24 graphene

Citation Formats


                    Grebel, Haim, Stan, Liliana, Sumant, Anirudha, Liu, Yuzi, Gosztola, David, Ocola, Leonidas, and Fisher, Brandon. Transfer of Graphene with Protective Oxide Layers.  United States: N. p., 2018. 
Web.  doi:10.3390/chemengineering2040058.

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                    Grebel, Haim, Stan, Liliana, Sumant, Anirudha, Liu, Yuzi, Gosztola, David, Ocola, Leonidas, & Fisher, Brandon. Transfer of Graphene with Protective Oxide Layers.  United States.  https://doi.org/10.3390/chemengineering2040058

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                    Grebel, Haim, Stan, Liliana, Sumant, Anirudha, Liu, Yuzi, Gosztola, David, Ocola, Leonidas, and Fisher, Brandon. Mon .  
"Transfer of Graphene with Protective Oxide Layers".  United States.  https://doi.org/10.3390/chemengineering2040058.  https://www.osti.gov/servlets/purl/1572724.

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@article{osti_1572724,

  title        = {Transfer of Graphene with Protective Oxide Layers},

  author       = {Grebel, Haim and Stan, Liliana and Sumant, Anirudha and Liu, Yuzi and Gosztola, David and Ocola, Leonidas and Fisher, Brandon},

  abstractNote = {Transfer of graphene, grown by chemical vapor deposition (CVD), to a substrate of choice, typically involves the deposition of a polymeric layer (for example, poly(methyl methacrylate) (PMMA), or polydimethylsiloxane, PDMS). These polymers are quite hard to remove without leaving some residues behind. One method to improve the graphene transfer is to coat the graphene with a thin protective oxide layer, followed by the deposition of a very thin polymer layer on top of the oxide layer (much thinner than the usual thickness), followed by a more aggressive polymeric removal method, thus leaving the graphene intact. At the same time, having an oxide layer on graphene may serve applications, such as channeled transistors or sensing devices. Here, we study the transfer of graphene with a protective thin oxide layer grown by atomic layer deposition (ALD). We follow the transfer process from the graphene growth stage through oxide deposition until completion. We report on the nucleation growth process of oxides on graphene, their resultant strain and their optical transmission.},

  doi          = {10.3390/chemengineering2040058},

  journal      = {ChemEngineering},

  number       = 4,

  volume       = 2,

  place        = {United States},

  year         = {Mon Dec 03 00:00:00 EST 2018},

  month        = {Mon Dec 03 00:00:00 EST 2018}

}

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Title: Transfer of Graphene with Protective Oxide Layers

Abstract

Citation Formats

Automatic graphene transfer system for improved material quality and efficiency journal, February 2016

Structural Defects in Graphene journal, November 2010

Raman spectroscopy of graphene and graphite: Disorder, electron–phonon coupling, doping and nonadiabatic effects journal, July 2007

Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric journal, February 2009

Current saturation in zero-bandgap, top-gated graphene field-effect transistors journal, September 2008

Simple method to transfer graphene from metallic catalytic substrates to flexible surfaces without chemical etching journal, April 2013

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Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition journal, April 2012

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Graphene Strained by Defects journal, April 2017

Wafer-Scale Synthesis and Transfer of Graphene Films journal, February 2010

Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics journal, May 2008

Atomic Layer Deposition of Metal Oxides on Pristine and Functionalized Graphene journal, July 2008

Improvement of Al 2 O 3 Films on Graphene Grown by Atomic Layer Deposition with Pre-H 2 O Treatment journal, May 2014

Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substrates journal, June 2002

The role of interlayer adhesion in graphene oxide upon its reinforcement of nanocomposites journal, July 2016

Progress and Challenges in Transfer of Large-Area Graphene Films journal, February 2016

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Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors journal, December 2009

Nitrogen-doped graphene: beyond single substitution and enhanced molecular sensing journal, August 2012

Kinetic theory of two-component (“hetero-molecular”) nucleation and condensation journal, July 1976

PMMA-Etching-Free Transfer of Wafer-scale Chemical Vapor Deposition Two-dimensional Atomic Crystal by a Water Soluble Polyvinyl Alcohol Polymer Method journal, September 2016

Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor journal, March 2008

Repeated growth and bubbling transfer of graphene with millimetre-size single-crystal grains using platinum journal, January 2012

A sustainable approach to large area transfer of graphene and recycling of the copper substrate journal, January 2017

Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends journal, January 2013

Characteristics of high-k Al2O3 dielectric using ozone-based atomic layer deposition for dual-gated graphene devices journal, July 2010

Atomic layer deposition of HfO2 on graphene from HfCl4 and H2O journal, January 2011

Effect of hydrogen flow during cooling phase to achieve uniform and repeatable growth of bilayer graphene on copper foils over large area journal, October 2014

Clean transfer of graphene and its effect on contact resistance journal, September 2013

Transfer of CVD-Grown Monolayer Graphene onto Arbitrary Substrates journal, August 2011

Atomic layer deposited oxide films as protective interface layers for integrated graphene transfer journal, November 2017

Two-component heterogeneous nucleation kinetics and an application to Mars journal, October 2007

Atomic layer deposited oxide films as protective interface layers for integrated graphene transfer text, January 2017

The Deposition of High-Quality HfO2 on Graphene and the Effect of Remote Oxide Phonon Scattering text, January 2009

Recent Advances in Seeded and Seed-Layer-Free Atomic Layer Deposition of High-K Dielectrics on Graphene for Electronics journal, September 2019

Automatic graphene transfer system for improved material quality and efficiency
journal, February 2016

Structural Defects in Graphene
journal, November 2010

Raman spectroscopy of graphene and graphite: Disorder, electron–phonon coupling, doping and nonadiabatic effects
journal, July 2007

Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric
journal, February 2009

Current saturation in zero-bandgap, top-gated graphene field-effect transistors
journal, September 2008

Simple method to transfer graphene from metallic catalytic substrates to flexible surfaces without chemical etching
journal, April 2013

Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates
journal, June 2009

Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition
journal, April 2012

Efficient etching-free transfer of high quality, large-area CVD grown graphene onto polyvinyl alcohol films
journal, February 2016

Graphene Strained by Defects
journal, April 2017

Wafer-Scale Synthesis and Transfer of Graphene Films
journal, February 2010

Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics
journal, May 2008

Atomic Layer Deposition of Metal Oxides on Pristine and Functionalized Graphene
journal, July 2008

Improvement of Al ₂ O ₃ Films on Graphene Grown by Atomic Layer Deposition with Pre-H ₂ O Treatment
journal, May 2014

Electrical characterization of thin Al₂O₃ films grown by atomic layer deposition on silicon and various metal substrates
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The role of interlayer adhesion in graphene oxide upon its reinforcement of nanocomposites
journal, July 2016

Progress and Challenges in Transfer of Large-Area Graphene Films
journal, February 2016

Deposition of High-Quality ${HfO}_{2}$ on Graphene and the Effect of Remote Oxide Phonon Scattering
journal, September 2010

Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors
journal, December 2009

Nitrogen-doped graphene: beyond single substitution and enhanced molecular sensing
journal, August 2012

Kinetic theory of two-component (“hetero-molecular”) nucleation and condensation
journal, July 1976

PMMA-Etching-Free Transfer of Wafer-scale Chemical Vapor Deposition Two-dimensional Atomic Crystal by a Water Soluble Polyvinyl Alcohol Polymer Method
journal, September 2016

Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor
journal, March 2008

Repeated growth and bubbling transfer of graphene with millimetre-size single-crystal grains using platinum
journal, January 2012

A sustainable approach to large area transfer of graphene and recycling of the copper substrate
journal, January 2017

Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
journal, January 2013

Characteristics of high-k Al2O3 dielectric using ozone-based atomic layer deposition for dual-gated graphene devices
journal, July 2010

Atomic layer deposition of HfO2 on graphene from HfCl4 and H2O
journal, January 2011

Effect of hydrogen flow during cooling phase to achieve uniform and repeatable growth of bilayer graphene on copper foils over large area
journal, October 2014

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journal, September 2013

Transfer of CVD-Grown Monolayer Graphene onto Arbitrary Substrates
journal, August 2011

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journal, November 2017

Two-component heterogeneous nucleation kinetics and an application to Mars
journal, October 2007

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The Deposition of High-Quality HfO2 on Graphene and the Effect of Remote Oxide Phonon Scattering
text, January 2009

Recent Advances in Seeded and Seed-Layer-Free Atomic Layer Deposition of High-K Dielectrics on Graphene for Electronics
journal, September 2019