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Title: Modulation of the electronic states of perovskite SrCrO3 thin films through protonation via low-energy hydrogen plasma implantation approaches

Abstract

Hydrogenation of transition metal oxides offers a powerful platform to tailor physical functionalities as well as for potential applications in modern electronic technologies. An ideal nondestructive and efficient hydrogen incorporation approach is important for the realistic technological applications. We demonstrate the proton injection on SrCrO3 thin films via an effecient low-energy hydrogen plasma implantation experiments, without destroying the original lattice framework. Hydrogen ions accumulate largely at the interfacial regions with amorphous character which extend about one-third of the total thickness. The HxSrCrO3 (HSCO) thin films appear like exfoliated layers which however retain the fully strained state with distorted perovskite structure. Proton doping induces the change of Cr oxidation state from Cr4+ to Cr3+ in HSCO thin films and a transition from metallic to insulating phase. As a result, our investigations suggest an attractive platform in manipulating the electronic phases in proton-based approaches and may offer a potential peeling off strategy for nanoscale devices through low-energy hydrogen plasma implantation approaches.

Authors:
 [1];  [2];  [2];  [3];  [3];  [1];  [1];  [4];  [5];  [5];  [6];  [6];  [1];  [1]
  1. Xiamen Univ., Xiamen (China)
  2. Shenzhen Univ., Shenzhen (China)
  3. Univ. of Electronic Science and Technology of China, Chengdu (China)
  4. Univ. of Science and Technology of China, Hefei (China)
  5. Brookhaven National Lab. (BNL), Upton, NY (United States)
  6. Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1572357
Report Number(s):
BNL-212274-2019-JAAM
Journal ID: ISSN 2095-0462; TRN: US2001181
Grant/Contract Number:  
SC0012704
Resource Type:
Accepted Manuscript
Journal Name:
Frontiers of Physics
Additional Journal Information:
Journal Volume: 15; Journal Issue: 1; Journal ID: ISSN 2095-0462
Publisher:
Springer
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; transition metal oxide thin film; metal insulator transition; hydrogenation

Citation Formats

Wu, Meng, Chen, Shanquan, Huang, Chuanwei, Ye, Xing, Zhou, Haiping, Huang, Xiaochun, Zhang, Kelvin H. L., Yan, Wensheng, Zhang, Lihua, Kim, Kisslinger, Du, Yingge, Chambers, Scott, Zheng, Jin-Cheng, and Wang, Hui-Qiong. Modulation of the electronic states of perovskite SrCrO3 thin films through protonation via low-energy hydrogen plasma implantation approaches. United States: N. p., 2019. Web. doi:10.1007/s11467-019-0923-2.
Wu, Meng, Chen, Shanquan, Huang, Chuanwei, Ye, Xing, Zhou, Haiping, Huang, Xiaochun, Zhang, Kelvin H. L., Yan, Wensheng, Zhang, Lihua, Kim, Kisslinger, Du, Yingge, Chambers, Scott, Zheng, Jin-Cheng, & Wang, Hui-Qiong. Modulation of the electronic states of perovskite SrCrO3 thin films through protonation via low-energy hydrogen plasma implantation approaches. United States. doi:10.1007/s11467-019-0923-2.
Wu, Meng, Chen, Shanquan, Huang, Chuanwei, Ye, Xing, Zhou, Haiping, Huang, Xiaochun, Zhang, Kelvin H. L., Yan, Wensheng, Zhang, Lihua, Kim, Kisslinger, Du, Yingge, Chambers, Scott, Zheng, Jin-Cheng, and Wang, Hui-Qiong. Mon . "Modulation of the electronic states of perovskite SrCrO3 thin films through protonation via low-energy hydrogen plasma implantation approaches". United States. doi:10.1007/s11467-019-0923-2. https://www.osti.gov/servlets/purl/1572357.
@article{osti_1572357,
title = {Modulation of the electronic states of perovskite SrCrO3 thin films through protonation via low-energy hydrogen plasma implantation approaches},
author = {Wu, Meng and Chen, Shanquan and Huang, Chuanwei and Ye, Xing and Zhou, Haiping and Huang, Xiaochun and Zhang, Kelvin H. L. and Yan, Wensheng and Zhang, Lihua and Kim, Kisslinger and Du, Yingge and Chambers, Scott and Zheng, Jin-Cheng and Wang, Hui-Qiong},
abstractNote = {Hydrogenation of transition metal oxides offers a powerful platform to tailor physical functionalities as well as for potential applications in modern electronic technologies. An ideal nondestructive and efficient hydrogen incorporation approach is important for the realistic technological applications. We demonstrate the proton injection on SrCrO3 thin films via an effecient low-energy hydrogen plasma implantation experiments, without destroying the original lattice framework. Hydrogen ions accumulate largely at the interfacial regions with amorphous character which extend about one-third of the total thickness. The HxSrCrO3 (HSCO) thin films appear like exfoliated layers which however retain the fully strained state with distorted perovskite structure. Proton doping induces the change of Cr oxidation state from Cr4+ to Cr3+ in HSCO thin films and a transition from metallic to insulating phase. As a result, our investigations suggest an attractive platform in manipulating the electronic phases in proton-based approaches and may offer a potential peeling off strategy for nanoscale devices through low-energy hydrogen plasma implantation approaches.},
doi = {10.1007/s11467-019-0923-2},
journal = {Frontiers of Physics},
number = 1,
volume = 15,
place = {United States},
year = {2019},
month = {9}
}

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