Anomalous Magnetoresistance due to Longitudinal Spin Fluctuations in a Jeff = 1/2 Mott Semiconductor

doi:10.1038/s41467-019-13271-6

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Title: Anomalous Magnetoresistance due to Longitudinal Spin Fluctuations in a J _eff = 1/2 Mott Semiconductor

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Abstract

As a hallmark of electronic correlation, spin-charge interplay underlies many emergent phenomena in doped Mott insulators, such as high-temperature superconductivity, whereas the half-filled parent state is usually electronically frozen with an antiferromagnetic order that resists external control. We report on the observation of a positive magnetoresistance that probes the staggered susceptibility of a pseudospin-half square-lattice Mott insulator built as an artificial SrIrO ₃/SrTiO ₃ superlattice.

Authors:

Hao, Lin ^[1];

^[2]; Wang, Zhentao ^[1]; Yang, Junyi ^[1]; Meyers, D. ^[2]; Sanchez, Joshua ^[3]; Fabbris, Gilberto ^[4]; Choi, Yongseong ^[4]; Kim, Jong-Woo ^[4]; Haskel, Daniel ^[4]; Ryan, Philip J. ^[5]; Barros, Kipton ^[6]; Chu, Jiun-Haw ^[3]; Batista, Christian D. ^[7]; Liu, Jian ^[1]

Univ. of Tennessee, Knoxville, TN (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States)
Univ. of Washington, Seattle, WA (United States)
Argonne National Lab. (ANL), Argonne, IL (United States)
Argonne National Lab. (ANL), Argonne, IL (United States); Dublin City Univ., Dublin (Ireland)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Publication Date:: 2019-11-15

Research Org.:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

OSTI Identifier:: 1572355

Report Number(s):: BNL-212270-2019-JAAM
Journal ID: ISSN 2041--1723

Grant/Contract Number:: SC0012704

Resource Type:: Accepted Manuscript

Journal Name:: Nature Communications

Additional Journal Information:: Journal Volume: 10; Journal Issue: 1; Journal ID: ISSN 2041--1723

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats


                    Hao, Lin, Dean, Mark P. M., Wang, Zhentao, Yang, Junyi, Meyers, D., Sanchez, Joshua, Fabbris, Gilberto, Choi, Yongseong, Kim, Jong-Woo, Haskel, Daniel, Ryan, Philip J., Barros, Kipton, Chu, Jiun-Haw, Batista, Christian D., and Liu, Jian. Anomalous Magnetoresistance due to Longitudinal Spin Fluctuations in a Jeff = 1/2 Mott Semiconductor.  United States: N. p., 2019. 
        Web.  doi:10.1038/s41467-019-13271-6.

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                    Hao, Lin, Dean, Mark P. M., Wang, Zhentao, Yang, Junyi, Meyers, D., Sanchez, Joshua, Fabbris, Gilberto, Choi, Yongseong, Kim, Jong-Woo, Haskel, Daniel, Ryan, Philip J., Barros, Kipton, Chu, Jiun-Haw, Batista, Christian D., & Liu, Jian. Anomalous Magnetoresistance due to Longitudinal Spin Fluctuations in a Jeff = 1/2 Mott Semiconductor.  United States.  doi:10.1038/s41467-019-13271-6.

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                    Hao, Lin, Dean, Mark P. M., Wang, Zhentao, Yang, Junyi, Meyers, D., Sanchez, Joshua, Fabbris, Gilberto, Choi, Yongseong, Kim, Jong-Woo, Haskel, Daniel, Ryan, Philip J., Barros, Kipton, Chu, Jiun-Haw, Batista, Christian D., and Liu, Jian. Fri .  
        "Anomalous Magnetoresistance due to Longitudinal Spin Fluctuations in a Jeff = 1/2 Mott Semiconductor".  United States.  doi:10.1038/s41467-019-13271-6.

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@article{osti_1572355,

  title        = {Anomalous Magnetoresistance due to Longitudinal Spin Fluctuations in a Jeff = 1/2 Mott Semiconductor},

  author       = {Hao, Lin and Dean, Mark P. M. and Wang, Zhentao and Yang, Junyi and Meyers, D. and Sanchez, Joshua and Fabbris, Gilberto and Choi, Yongseong and Kim, Jong-Woo and Haskel, Daniel and Ryan, Philip J. and Barros, Kipton and Chu, Jiun-Haw and Batista, Christian D. and Liu, Jian},

  abstractNote = {As a hallmark of electronic correlation, spin-charge interplay underlies many emergent phenomena in doped Mott insulators, such as high-temperature superconductivity, whereas the half-filled parent state is usually electronically frozen with an antiferromagnetic order that resists external control. We report on the observation of a positive magnetoresistance that probes the staggered susceptibility of a pseudospin-half square-lattice Mott insulator built as an artificial SrIrO3/SrTiO3 superlattice.},

  doi          = {10.1038/s41467-019-13271-6},

  journal      = {Nature Communications},

  number       = 1,

  volume       = 10,

  place        = {United States},

  year         = {2019},

  month        = {11}

}

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This content will become publicly available on November 15, 2020

Title: Anomalous Magnetoresistance due to Longitudinal Spin Fluctuations in a J eff = 1/2 Mott Semiconductor

Abstract

Citation Formats

Title: Anomalous Magnetoresistance due to Longitudinal Spin Fluctuations in a J _eff = 1/2 Mott Semiconductor