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Title: Plasma-enhanced atomic-layer-deposited gallium nitride as an electron transport layer for planar perovskite solar cells

Abstract

Plasma-enhanced atomic-layer-deposited GaN thin-films have been introduced into planar perovskite solar cells as electron transport layers.

Authors:
ORCiD logo [1];  [2];  [1];  [1];  [1]; ORCiD logo [1];  [2];  [2]; ORCiD logo [3];  [1]
  1. School of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, University of Science and Technology Beijing, Beijing 100083, China
  2. Key Laboratory for Renewable Energy (CAS), Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, Institute of Physics, Chinese Academy of Science
  3. Department of Chemistry and UCR Centre of Catalysis, University of California, Riverside, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1571691
Grant/Contract Number:  
SC0001839
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Materials Chemistry. A
Additional Journal Information:
Journal Name: Journal of Materials Chemistry. A Journal Volume: 7 Journal Issue: 44; Journal ID: ISSN 2050-7488
Publisher:
Royal Society of Chemistry (RSC)
Country of Publication:
United Kingdom
Language:
English

Citation Formats

Wei, Huiyun, Wu, Jionghua, Qiu, Peng, Liu, Sanjie, He, Yingfeng, Peng, Mingzeng, Li, Dongmei, Meng, Qingbo, Zaera, Francisco, and Zheng, Xinhe. Plasma-enhanced atomic-layer-deposited gallium nitride as an electron transport layer for planar perovskite solar cells. United Kingdom: N. p., 2019. Web. doi:10.1039/C9TA08929B.
Wei, Huiyun, Wu, Jionghua, Qiu, Peng, Liu, Sanjie, He, Yingfeng, Peng, Mingzeng, Li, Dongmei, Meng, Qingbo, Zaera, Francisco, & Zheng, Xinhe. Plasma-enhanced atomic-layer-deposited gallium nitride as an electron transport layer for planar perovskite solar cells. United Kingdom. doi:10.1039/C9TA08929B.
Wei, Huiyun, Wu, Jionghua, Qiu, Peng, Liu, Sanjie, He, Yingfeng, Peng, Mingzeng, Li, Dongmei, Meng, Qingbo, Zaera, Francisco, and Zheng, Xinhe. Tue . "Plasma-enhanced atomic-layer-deposited gallium nitride as an electron transport layer for planar perovskite solar cells". United Kingdom. doi:10.1039/C9TA08929B.
@article{osti_1571691,
title = {Plasma-enhanced atomic-layer-deposited gallium nitride as an electron transport layer for planar perovskite solar cells},
author = {Wei, Huiyun and Wu, Jionghua and Qiu, Peng and Liu, Sanjie and He, Yingfeng and Peng, Mingzeng and Li, Dongmei and Meng, Qingbo and Zaera, Francisco and Zheng, Xinhe},
abstractNote = {Plasma-enhanced atomic-layer-deposited GaN thin-films have been introduced into planar perovskite solar cells as electron transport layers.},
doi = {10.1039/C9TA08929B},
journal = {Journal of Materials Chemistry. A},
number = 44,
volume = 7,
place = {United Kingdom},
year = {2019},
month = {11}
}

Journal Article:
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