Electrolyte Gated Oxides

Bollinger, Anthony T.; Dubuis, Guy; Leng, Xiang; He, Xi; Božović, Ivan

doi:10.1007/s10948-019-05313-3

Title: Electrolyte Gated Oxides

Abstract

Electrolyte gating has the potential to generate electric fields at the surface of materials in the 10⁷-10⁸ V/cm range and induce charge carriers in these materials up to 10¹⁴-10¹⁵ cm^-2, making this technique very attractive for studying complex and functional oxides. Several types of processes — notably including proton diffusion and intake — can occur during charging, which makes it crucially important to consider and understand exactly how a given material is interacting with an electrolyte. We report on several of these mechanisms and how to distinguish between them.

Authors:

^[1]; Dubuis, Guy ^[2]; Leng, Xiang ^[3]; He, Xi ^[4]; Božović, Ivan ^[4]

Brookhaven National Lab. (BNL), Upton, NY (United States)
Victoria Univ. of Wellington (New Zealand)
Brookhaven National Lab. (BNL), Upton, NY (United States); Lumentum Operations LLC, Milpitas, CA (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States); Yale Univ., New Haven, CT (United States)

Publication Date:: 2019-11-04

Research Org.:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; Gordon and Betty Moore Foundation’s EPiQS Initiative; USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1571430

Alternate Identifier(s):: OSTI ID: 1566291

Report Number(s):: BNL-212203-2019-JAAM; BNL-212111-2019-JAAM
Journal ID: ISSN 1557-1939; TRN: US2001343

Grant/Contract Number:: SC0012704

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Superconductivity and Novel Magnetism

Additional Journal Information:: Journal Volume: 33; Journal Issue: 1; Journal ID: ISSN 1557-1939

Publisher:: Springer

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Electrolyte Gating; Oxides; Electrical transport

Citation Formats


                    Bollinger, Anthony T., Dubuis, Guy, Leng, Xiang, He, Xi, and Božović, Ivan. Electrolyte Gated Oxides.  United States: N. p., 2019. 
Web.  doi:10.1007/s10948-019-05313-3.

Copy to clipboard


                    Bollinger, Anthony T., Dubuis, Guy, Leng, Xiang, He, Xi, & Božović, Ivan. Electrolyte Gated Oxides.  United States.  https://doi.org/10.1007/s10948-019-05313-3

Copy to clipboard


                    Bollinger, Anthony T., Dubuis, Guy, Leng, Xiang, He, Xi, and Božović, Ivan. Mon .  
"Electrolyte Gated Oxides".  United States.  https://doi.org/10.1007/s10948-019-05313-3.  https://www.osti.gov/servlets/purl/1571430.

Copy to clipboard


                    
@article{osti_1571430,

  title        = {Electrolyte Gated Oxides},

  author       = {Bollinger, Anthony T. and Dubuis, Guy and Leng, Xiang and He, Xi and Božović, Ivan},

  abstractNote = {Electrolyte gating has the potential to generate electric fields at the surface of materials in the 107-108 V/cm range and induce charge carriers in these materials up to 1014-1015 cm-2, making this technique very attractive for studying complex and functional oxides. Several types of processes — notably including proton diffusion and intake — can occur during charging, which makes it crucially important to consider and understand exactly how a given material is interacting with an electrolyte. We report on several of these mechanisms and how to distinguish between them.},

  doi          = {10.1007/s10948-019-05313-3},

  journal      = {Journal of Superconductivity and Novel Magnetism},

  number       = 1,

  volume       = 33,

  place        = {United States},

  year         = {2019},

  month        = {11}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (DOE)

Publisher's Version of Record

https://doi.org/10.1007/s10948-019-05313-3

Other availability

Search WorldCat to find libraries that may hold this journal

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Electrostatic Tuning of the Hole Density in ${{NdBa}_{2} {Cu}_{3} O}_{7 - δ}$ Films and its Effect on the Hall Response
journal, January 2002

Gariglio, S.; Ahn, C. H.; Matthey, D.
Physical Review Letters, Vol. 88, Issue 6
DOI: 10.1103/PhysRevLett.88.067002

Protonation induced high- T c phases in iron-based superconductors evidenced by NMR and magnetization measurements
journal, January 2018

Cui, Yi; Zhang, Gehui; Li, Haobo
Science Bulletin, Vol. 63, Issue 1
DOI: 10.1016/j.scib.2017.12.009

New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance
journal, August 1980

Klitzing, K. v.; Dorda, G.; Pepper, M.
Physical Review Letters, Vol. 45, Issue 6
DOI: 10.1103/PhysRevLett.45.494

Antiferromagnetic order of Cu in Sm ₂ CuO ₄
journal, April 1991

Skanthakumar, S.; Lynn, J. W.; Peng, J. L.
Journal of Applied Physics, Vol. 69, Issue 8
DOI: 10.1063/1.348206

Electric field effect on superconducting YBa2Cu3O7?? films
journal, October 1991

Mannhart, J.; Bednorz, J. G.; M�ller, K. A.
Zeitschrift f�r Physik B Condensed Matter, Vol. 83, Issue 3
DOI: 10.1007/BF01313398

Electrolyte-Gated SmCoO ₃ Thin-Film Transistors Exhibiting Thickness-Dependent Large Switching Ratio at Room Temperature
journal, February 2013

Xiang, Ping-Hua; Asanuma, Shutaro; Yamada, Hiroyuki
Advanced Materials, Vol. 25, Issue 15
DOI: 10.1002/adma.201204505

Insulator to metal transition in WO3 induced by electrolyte gating
journal, July 2017

Leng, X.; Pereiro, J.; Strle, J.
npj Quantum Materials, Vol. 2, Issue 1
DOI: 10.1038/s41535-017-0039-2

Collective bulk carrier delocalization driven by electrostatic surface charge accumulation
journal, July 2012

Nakano, M.; Shibuya, K.; Okuyama, D.
Nature, Vol. 487, Issue 7408
DOI: 10.1038/nature11296

Suppression of Metal-Insulator Transition in VO2 by Electric Field-Induced Oxygen Vacancy Formation
journal, March 2013

Jeong, J.; Aetukuri, N.; Graf, T.
Science, Vol. 339, Issue 6126
DOI: 10.1126/science.1230512

Room-Temperature-Protonation-Driven On-Demand Metal-Insulator Conversion of a Transition Metal Oxide
journal, June 2015

Katase, Takayoshi; Endo, Kenji; Tohei, Tetsuya
Advanced Electronic Materials, Vol. 1, Issue 7
DOI: 10.1002/aelm.201500063

BiFeO ₃ /YBa ₂ Cu ₃ O _7−δ heterostructures for strong ferroelectric modulation of superconductivity
journal, January 2013

Crassous, A.; Bernard, R.; Fusil, S.
Journal of Applied Physics, Vol. 113, Issue 2
DOI: 10.1063/1.4774248

Purely electronic mechanism of electrolyte gating of indium tin oxide thin films
journal, August 2016

Leng, X.; Bollinger, A. T.; Božović, I.
Scientific Reports, Vol. 6, Issue 1
DOI: 10.1038/srep31239

Transient Characteristics for Proton Gating in Laterally Coupled Indium–Zinc-Oxide Transistors
journal, March 2015

Liu, Ning; Zhu, Li Qiang; Xiao, Hui
ACS Applied Materials & Interfaces, Vol. 7, Issue 11
DOI: 10.1021/acsami.5b00327

Electric field effect in correlated oxide systems
journal, August 2003

Ahn, C. H.; Triscone, J. -M.; Mannhart, J.
Nature, Vol. 424, Issue 6952
DOI: 10.1038/nature01878

Electric-field-induced superconductivity in electrochemically etched ultrathin FeSe films on SrTiO3 and MgO
journal, November 2015

Shiogai, J.; Ito, Y.; Mitsuhashi, T.
Nature Physics, Vol. 12, Issue 1
DOI: 10.1038/nphys3530

Electric-Field Control of the Metal-Insulator Transition in Ultrathin NdNiO3 Films
journal, October 2010

Scherwitzl, Raoul; Zubko, Pavlo; Lezama, I. Gutierrez
Advanced Materials, Vol. 22, Issue 48
DOI: 10.1002/adma.201003241

Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO ₃ /NdGaO ₃ heterostructures
journal, May 2017

Dong, Yongqi; Xu, Haoran; Luo, Zhenlin
APL Materials, Vol. 5, Issue 5
DOI: 10.1063/1.4983617

Superconductor–insulator transition in La2 − xSr x CuO4 at the pair quantum resistance
journal, April 2011

Bollinger, A. T.; Dubuis, G.; Yoon, J.
Nature, Vol. 472, Issue 7344
DOI: 10.1038/nature09998

Field-effect tuning of carrier density in Nd1.2Ba1.8Cu3Oy thin films
journal, May 2004

Cassinese, A.; De Luca, G. M.; Prigiobbo, A.
Applied Physics Letters, Vol. 84, Issue 19
DOI: 10.1063/1.1745103

Studies of superconducting field effect transistors with sheet resistances close to the quantum resistance
journal, May 2005

Logvenov, G. Yu.; Schneider, C. W.; Mannhart, J.
Applied Physics Letters, Vol. 86, Issue 20
DOI: 10.1063/1.1929077

Electric-field-induced superconductivity in an insulator
journal, October 2008

Ueno, K.; Nakamura, S.; Shimotani, H.
Nature Materials, Vol. 7, Issue 11, p. 855-858
DOI: 10.1038/nmat2298

Highly conductive nanolayers on strontium titanate produced by preferential ion-beam etching
journal, July 2005

Reagor, David W.; Butko, Vladimir Y.
Nature Materials, Vol. 4, Issue 8, p. 593-596
DOI: 10.1038/nmat1402

“Cut and Stick” Rubbery Ion Gels as High Capacitance Gate Dielectrics
journal, July 2012

Lee, Keun Hyung; Kang, Moon Sung; Zhang, Sipei
Advanced Materials, Vol. 24, Issue 32
DOI: 10.1002/adma.201200950

Origin of Charge Density at ${LaAlO}_{3}$ on ${SrTiO}_{3}$ Heterointerfaces: Possibility of Intrinsic Doping
journal, May 2007

Siemons, Wolter; Koster, Gertjan; Yamamoto, Hideki
Physical Review Letters, Vol. 98, Issue 19, Article No. 196802
DOI: 10.1103/PhysRevLett.98.196802

Watch out for the lack of oxygen
journal, July 2007

Eckstein, James N.
Nature Materials, Vol. 6, Issue 7
DOI: 10.1038/nmat1944

Electron-doped superconductivity at 40 K in the infinite-layer compound Sr1–yNdyCu02
journal, June 1991

Smith, M. G.; Manthiram, A.; Zhou, J.
Nature, Vol. 351, Issue 6327
DOI: 10.1038/351549a0

Superconducting Interfaces Between Insulating Oxides
journal, August 2007

Reyren, N.; Thiel, S.; Caviglia, A. D.
Science, Vol. 317, Issue 5842
DOI: 10.1126/science.1146006

The electrochemical impact on electrostatic modulation of the metal-insulator transition in nickelates
journal, March 2015

Bubel, Simon; Hauser, Adam J.; Glaudell, Anne M.
Applied Physics Letters, Vol. 106, Issue 12
DOI: 10.1063/1.4915269

Dual field effects in electrolyte-gated spinel ferrite: electrostatic carrier doping and redox reactions
journal, July 2014

Ichimura, Takashi; Fujiwara, Kohei; Tanaka, Hidekazu
Scientific Reports, Vol. 4, Issue 1
DOI: 10.1038/srep05818

High-Density Carrier Accumulation in ZnO Field-Effect Transistors Gated by Electric Double Layers of Ionic Liquids
journal, April 2009

Yuan, Hongtao; Shimotani, Hidekazu; Tsukazaki, Atsushi
Advanced Functional Materials, Vol. 19, Issue 7
DOI: 10.1002/adfm.200801633

Influence of the doping concentration of Y1−yCayBa2Cu3O7−δ drain-source channels on the properties of superconducting field-effect devices
journal, October 2003

Logvenov, G. Yu.; Sawa, A.; Schneider, C. W.
Applied Physics Letters, Vol. 83, Issue 17
DOI: 10.1063/1.1622780

Oxygen Displacement in Cuprates under Ionic Liquid Field-Effect Gating
journal, August 2016

Dubuis, Guy; Yacoby, Yizhak; Zhou, Hua
Scientific Reports, Vol. 6, Issue 1
DOI: 10.1038/srep32378

Suppression of Ionic Liquid Gate-Induced Metallization of SrTiO ₃ (001) by Oxygen
journal, September 2013

Li, Mingyang; Han, Wei; Jiang, Xin
Nano Letters, Vol. 13, Issue 10
DOI: 10.1021/nl402088f

Electric-Field-Effect Modulation of the Transition Temperature, Mobile Carrier Density, and In-Plane Penetration Depth of ${NdBa}_{2} {Cu}_{3} O_{7 - δ}$ Thin Films
journal, January 2007

Matthey, D.; Reyren, N.; Triscone, J. -M.
Physical Review Letters, Vol. 98, Issue 5
DOI: 10.1103/PhysRevLett.98.057002

Electric double layer transistors with ferroelectric BaTiO ₃ channels
journal, June 2014

Ito, M.; Matsubara, Y.; Kozuka, Y.
Applied Physics Letters, Vol. 104, Issue 22
DOI: 10.1063/1.4881059

Modulation of the Electrical Properties of VO ₂ Nanobeams Using an Ionic Liquid as a Gating Medium
journal, May 2012

Ji, Heng; Wei, Jiang; Natelson, Douglas
Nano Letters, Vol. 12, Issue 6
DOI: 10.1021/nl300741h

Modulation of Metal-Insulator Transition in VO ₂ by Electrolyte Gating-Induced Protonation
journal, December 2015

Shibuya, Keisuke; Sawa, Akihito
Advanced Electronic Materials, Vol. 2, Issue 2
DOI: 10.1002/aelm.201500131

Superconductivity at 110 K in the infinite-layer compound (Sr1-xCax)1-yCuO2
journal, April 1992

Azuma, M.; Hiroi, Z.; Takano, M.
Nature, Vol. 356, Issue 6372
DOI: 10.1038/356775a0

Response of the double-layer capacitance of a high-temperature superconductor/fluid electrolyte interface to the onset of superconductivity
journal, August 1992

Peck, Stephen R.; Curtin, Larry S.; McDevitt, John T.
Journal of the American Chemical Society, Vol. 114, Issue 17
DOI: 10.1021/ja00043a023

Electrostatic Modulation of Superconductivity in Ultrathin GdBa2Cu3O7-x Films
journal, May 1999

Ahn, C. H.
Science, Vol. 284, Issue 5417
DOI: 10.1126/science.284.5417.1152

Tuning of the metal-insulator transition in electrolyte-gated NdNiO3 thin films
journal, October 2010

Asanuma, S.; Xiang, P. -H.; Yamada, H.
Applied Physics Letters, Vol. 97, Issue 14
DOI: 10.1063/1.3496458

Electrical conduction on the surface of ferroelectric PbTiO3 thin film induced by electrolyte gating
journal, January 2018

Nishino, Ryutaro; Kozuka, Yusuke; Uchida, Masaki
Applied Physics Letters, Vol. 112, Issue 5
DOI: 10.1063/1.5010391

Electric field effect on superconducting YBa2Cu3O7−δ films
journal, December 1991

Mannhart, J.; Schlom, D. G.; Bednorz, J. G.
Physica C: Superconductivity, Vol. 185-189
DOI: 10.1016/0921-4534(91)90998-e

Electric-field-induced superconductivity in electrochemically-etched ultrathin FeSe films on SrTiO3 and MgO
text, January 2015

Shiogai, J.; Ito, Y.; Mitsuhashi, T.
arXiv
DOI: 10.48550/arxiv.1510.00175

Insulator to Metal Transition in WO$_3$ Induced by Electrolyte Gating
text, January 2017

Leng, X.; Pereiro, J.; Strle, J.
arXiv
DOI: 10.48550/arxiv.1707.05748

Protonation induced high-Tc phases in iron-based superconductors evidenced by NMR and magnetization measurements
text, January 2017

Cui, Yi; Zhang, Gehui; Li, Haobo
arXiv
DOI: 10.48550/arxiv.1712.01191

Similar Records in DOE PAGES and OSTI.GOV collections:

Protonic/electronic hybrid oxide transistor gated by chitosan and its full-swing low voltage inverter applications

Journal Article Chao, Jin Yu ; Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 ; Zhu, Li Qiang, E-mail: lqzhu@nimte.ac.cn ; ... - Journal of Applied Physics

Modulation of charge carrier density in condensed materials based on ionic/electronic interaction has attracted much attention. Here, protonic/electronic hybrid indium-zinc-oxide (IZO) transistors gated by chitosan based electrolyte were obtained. The chitosan-based electrolyte illustrates a high proton conductivity and an extremely strong proton gating behavior. The transistor illustrates good electrical performances at a low operating voltage of ∼1.0 V such as on/off ratio of ∼3 × 10{sup 7}, subthreshold swing of ∼65 mV/dec, threshold voltage of ∼0.3 V, and mobility of ∼7 cm{sup 2}/V s. Good positive gate bias stress stabilities are obtained. Furthermore, a low voltage driven resistor-loaded inverter was built by using an IZO transistor inmore »« less
https://doi.org/10.1063/1.4937555
Compact mid-infrared graphene thermopile enabled by a nanopatterning technique of electrolyte gates

Journal Article Peng, Cheng ; Nanot, Sebastien ; Shiue, Ren-Jye ; ... - New Journal of Physics

A central challenge in making two-dimensional (2D) material-based devices faster, smaller, and more efficient is to control their charge carrier density at the nanometer scale. Traditional gating techniques based on capacitive coupling through a gate dielectric cannot generate strong and uniform electric fields at this scale due to divergence of the fields in dielectrics. This field divergence limits the gating strength, boundary sharpness, and minimum feature size of local gates, precluding certain device concepts (such as plasmonics and metamaterials based on spatial charge density variation) and resulting in large device footprints. Here we present a nanopatterned electrolyte gating concept thatmore »« less
Cited by 5
https://doi.org/10.1088/1367-2630/aada75
Wide-voltage-window reversible control of electronic transport in electrolyte-gated epitaxial ${BaSnO}_{3}$

Journal Article Wang, Helin ; Walter, Jeff ; Ganguly, Koustav ; ... - Physical Review Materials

The wide gap perovskite semiconductor BaSnO₃ has attracted much interest since the discovery of room temperature electron mobility up to 320 cm² V^-1 s^-1 in bulk crystals. Motivated by applications in oxide heterostructures, rapid progress has been made with BaSnO₃ films, although questions remain regarding transport mechanisms and mobility optimization. Here we report on a detailed study of epitaxial BaSnO₃ electric double layer transistors based on ion gel electrolytes, enabling wide-doping-range studies of transport in single films. The work spans an order of magnitude in initial n doping (similar to 10¹⁹ to 10²⁰ cm^-3, with both oxygen vacancies and La),more »« less
Cited by 17
https://doi.org/10.1103/PhysRevMaterials.3.075001

Full Text Available
A high-mobility electronic system at an electrolyte-gated oxide surface

Journal Article Gallagher, Patrick ; Lee, Menyoung ; Petach, Trevor A. ; ... - Nature Communications

Electrolyte gating is a powerful technique for accumulating large carrier densities at a surface. Yet this approach suffers from significant sources of disorder: electrochemical reactions can damage or alter the sample, and the ions of the electrolyte and various dissolved contaminants sit Angstroms from the electron system. Accordingly, electrolyte gating is well suited to studies of superconductivity and other phenomena robust to disorder, but of limited use when reactions or disorder must be avoided. Here we demonstrate that these limitations can be overcome by protecting the sample with a chemically inert, atomically smooth sheet of hexagonal boron nitride. We illustratemore »« less
Cited by 72
https://doi.org/10.1038/ncomms7437

Full Text Available
Effect of proton irradiation dose on InAlN/GaN metal-oxide semiconductor high electron mobility transistors with Al₂O₃ gate oxide

Journal Article Ahn, Shihyun ; Kim, Byung -Jae ; Lin, Yi -Hsuan ; ... - Journal of Vacuum Science and Technology B

The effects of proton irradiation on the dc performance of InAlN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) with Al₂O₃ as the gate oxide were investigated. The InAlN/GaN MOSHEMTs were irradiated with doses ranging from 1×10¹³ to 1×10¹⁵cm^–2 at a fixed energy of 5MeV. There was minimal damage induced in the two dimensional electron gas at the lowest irradiation dose with no measurable increase in sheet resistance, whereas a 9.7% increase of the sheet resistance was observed at the highest irradiation dose. By sharp contrast, all irradiation doses created more severe degradation in the Ohmic metal contacts, with increases of specificmore »« less
Cited by 15
https://doi.org/10.1116/1.4959786

Full Text Available

Similar Records

Title: Electrolyte Gated Oxides

Abstract

Citation Formats

Electrostatic Tuning of the Hole Density in NdBa 2 Cu 3 O 7 − δ Films and its Effect on the Hall Response journal, January 2002

Protonation induced high- T c phases in iron-based superconductors evidenced by NMR and magnetization measurements journal, January 2018

New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance journal, August 1980

Antiferromagnetic order of Cu in Sm 2 CuO 4 journal, April 1991

Electric field effect on superconducting YBa2Cu3O7?? films journal, October 1991

Electrolyte-Gated SmCoO 3 Thin-Film Transistors Exhibiting Thickness-Dependent Large Switching Ratio at Room Temperature journal, February 2013

Insulator to metal transition in WO3 induced by electrolyte gating journal, July 2017

Collective bulk carrier delocalization driven by electrostatic surface charge accumulation journal, July 2012

Suppression of Metal-Insulator Transition in VO2 by Electric Field-Induced Oxygen Vacancy Formation journal, March 2013

Room-Temperature-Protonation-Driven On-Demand Metal-Insulator Conversion of a Transition Metal Oxide journal, June 2015

BiFeO 3 /YBa 2 Cu 3 O 7−δ heterostructures for strong ferroelectric modulation of superconductivity journal, January 2013

Purely electronic mechanism of electrolyte gating of indium tin oxide thin films journal, August 2016

Transient Characteristics for Proton Gating in Laterally Coupled Indium–Zinc-Oxide Transistors journal, March 2015

Electric field effect in correlated oxide systems journal, August 2003

Electric-field-induced superconductivity in electrochemically etched ultrathin FeSe films on SrTiO3 and MgO journal, November 2015

Electric-Field Control of the Metal-Insulator Transition in Ultrathin NdNiO3 Films journal, October 2010

Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO 3 /NdGaO 3 heterostructures journal, May 2017

Superconductor–insulator transition in La2 − xSr x CuO4 at the pair quantum resistance journal, April 2011

Field-effect tuning of carrier density in Nd1.2Ba1.8Cu3Oy thin films journal, May 2004

Studies of superconducting field effect transistors with sheet resistances close to the quantum resistance journal, May 2005

Electric-field-induced superconductivity in an insulator journal, October 2008

Highly conductive nanolayers on strontium titanate produced by preferential ion-beam etching journal, July 2005

“Cut and Stick” Rubbery Ion Gels as High Capacitance Gate Dielectrics journal, July 2012

Origin of Charge Density at LaAlO3 on SrTiO3 Heterointerfaces: Possibility of Intrinsic Doping journal, May 2007

Watch out for the lack of oxygen journal, July 2007

Electron-doped superconductivity at 40 K in the infinite-layer compound Sr1–yNdyCu02 journal, June 1991

Superconducting Interfaces Between Insulating Oxides journal, August 2007

The electrochemical impact on electrostatic modulation of the metal-insulator transition in nickelates journal, March 2015

Dual field effects in electrolyte-gated spinel ferrite: electrostatic carrier doping and redox reactions journal, July 2014

High-Density Carrier Accumulation in ZnO Field-Effect Transistors Gated by Electric Double Layers of Ionic Liquids journal, April 2009

Influence of the doping concentration of Y1−yCayBa2Cu3O7−δ drain-source channels on the properties of superconducting field-effect devices journal, October 2003

Oxygen Displacement in Cuprates under Ionic Liquid Field-Effect Gating journal, August 2016

Suppression of Ionic Liquid Gate-Induced Metallization of SrTiO 3 (001) by Oxygen journal, September 2013

Electric-Field-Effect Modulation of the Transition Temperature, Mobile Carrier Density, and In-Plane Penetration Depth of NdBa 2 Cu 3 O 7 − δ Thin Films journal, January 2007

Electric double layer transistors with ferroelectric BaTiO 3 channels journal, June 2014

Modulation of the Electrical Properties of VO 2 Nanobeams Using an Ionic Liquid as a Gating Medium journal, May 2012

Modulation of Metal-Insulator Transition in VO 2 by Electrolyte Gating-Induced Protonation journal, December 2015

Superconductivity at 110 K in the infinite-layer compound (Sr1-xCax)1-yCuO2 journal, April 1992

Response of the double-layer capacitance of a high-temperature superconductor/fluid electrolyte interface to the onset of superconductivity journal, August 1992

Electrostatic Modulation of Superconductivity in Ultrathin GdBa2Cu3O7-x Films journal, May 1999

Tuning of the metal-insulator transition in electrolyte-gated NdNiO3 thin films journal, October 2010

Electrical conduction on the surface of ferroelectric PbTiO3 thin film induced by electrolyte gating journal, January 2018

Electric field effect on superconducting YBa2Cu3O7−δ films journal, December 1991

Electric-field-induced superconductivity in electrochemically-etched ultrathin FeSe films on SrTiO3 and MgO text, January 2015

Insulator to Metal Transition in WO$_3$ Induced by Electrolyte Gating text, January 2017

Protonation induced high-Tc phases in iron-based superconductors evidenced by NMR and magnetization measurements text, January 2017

Electrostatic Tuning of the Hole Density in ${{NdBa}_{2} {Cu}_{3} O}_{7 - δ}$ Films and its Effect on the Hall Response
journal, January 2002

Protonation induced high- T c phases in iron-based superconductors evidenced by NMR and magnetization measurements
journal, January 2018

New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance
journal, August 1980

Antiferromagnetic order of Cu in Sm ₂ CuO ₄
journal, April 1991

Electric field effect on superconducting YBa2Cu3O7?? films
journal, October 1991

Electrolyte-Gated SmCoO ₃ Thin-Film Transistors Exhibiting Thickness-Dependent Large Switching Ratio at Room Temperature
journal, February 2013

Insulator to metal transition in WO3 induced by electrolyte gating
journal, July 2017

Collective bulk carrier delocalization driven by electrostatic surface charge accumulation
journal, July 2012

Suppression of Metal-Insulator Transition in VO2 by Electric Field-Induced Oxygen Vacancy Formation
journal, March 2013

Room-Temperature-Protonation-Driven On-Demand Metal-Insulator Conversion of a Transition Metal Oxide
journal, June 2015

BiFeO ₃ /YBa ₂ Cu ₃ O _7−δ heterostructures for strong ferroelectric modulation of superconductivity
journal, January 2013

Purely electronic mechanism of electrolyte gating of indium tin oxide thin films
journal, August 2016

Transient Characteristics for Proton Gating in Laterally Coupled Indium–Zinc-Oxide Transistors
journal, March 2015

Electric field effect in correlated oxide systems
journal, August 2003

Electric-field-induced superconductivity in electrochemically etched ultrathin FeSe films on SrTiO3 and MgO
journal, November 2015

Electric-Field Control of the Metal-Insulator Transition in Ultrathin NdNiO3 Films
journal, October 2010

Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO ₃ /NdGaO ₃ heterostructures
journal, May 2017

Superconductor–insulator transition in La2 − xSr x CuO4 at the pair quantum resistance
journal, April 2011

Field-effect tuning of carrier density in Nd1.2Ba1.8Cu3Oy thin films
journal, May 2004

Studies of superconducting field effect transistors with sheet resistances close to the quantum resistance
journal, May 2005

Electric-field-induced superconductivity in an insulator
journal, October 2008

Highly conductive nanolayers on strontium titanate produced by preferential ion-beam etching
journal, July 2005

“Cut and Stick” Rubbery Ion Gels as High Capacitance Gate Dielectrics
journal, July 2012

Origin of Charge Density at ${LaAlO}_{3}$ on ${SrTiO}_{3}$ Heterointerfaces: Possibility of Intrinsic Doping
journal, May 2007

Watch out for the lack of oxygen
journal, July 2007

Electron-doped superconductivity at 40 K in the infinite-layer compound Sr1–yNdyCu02
journal, June 1991

Superconducting Interfaces Between Insulating Oxides
journal, August 2007

The electrochemical impact on electrostatic modulation of the metal-insulator transition in nickelates
journal, March 2015

Dual field effects in electrolyte-gated spinel ferrite: electrostatic carrier doping and redox reactions
journal, July 2014

High-Density Carrier Accumulation in ZnO Field-Effect Transistors Gated by Electric Double Layers of Ionic Liquids
journal, April 2009

Influence of the doping concentration of Y1−yCayBa2Cu3O7−δ drain-source channels on the properties of superconducting field-effect devices
journal, October 2003

Oxygen Displacement in Cuprates under Ionic Liquid Field-Effect Gating
journal, August 2016

Suppression of Ionic Liquid Gate-Induced Metallization of SrTiO ₃ (001) by Oxygen
journal, September 2013

Electric-Field-Effect Modulation of the Transition Temperature, Mobile Carrier Density, and In-Plane Penetration Depth of ${NdBa}_{2} {Cu}_{3} O_{7 - δ}$ Thin Films
journal, January 2007

Electric double layer transistors with ferroelectric BaTiO ₃ channels
journal, June 2014

Modulation of the Electrical Properties of VO ₂ Nanobeams Using an Ionic Liquid as a Gating Medium
journal, May 2012

Modulation of Metal-Insulator Transition in VO ₂ by Electrolyte Gating-Induced Protonation
journal, December 2015

Superconductivity at 110 K in the infinite-layer compound (Sr1-xCax)1-yCuO2
journal, April 1992

Response of the double-layer capacitance of a high-temperature superconductor/fluid electrolyte interface to the onset of superconductivity
journal, August 1992

Electrostatic Modulation of Superconductivity in Ultrathin GdBa2Cu3O7-x Films
journal, May 1999

Tuning of the metal-insulator transition in electrolyte-gated NdNiO3 thin films
journal, October 2010

Electrical conduction on the surface of ferroelectric PbTiO3 thin film induced by electrolyte gating
journal, January 2018

Electric field effect on superconducting YBa2Cu3O7−δ films
journal, December 1991

Electric-field-induced superconductivity in electrochemically-etched ultrathin FeSe films on SrTiO3 and MgO
text, January 2015

Insulator to Metal Transition in WO$_3$ Induced by Electrolyte Gating
text, January 2017

Protonation induced high-Tc phases in iron-based superconductors evidenced by NMR and magnetization measurements
text, January 2017