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Title: Tunneling noise and defects in exfoliated hexagonal boron nitride

Authors:
 [1];  [1];  [2];  [3];  [3]; ORCiD logo [4]
  1. Department of Physics and Astronomy, Rice, University, Houston, Texas 77005, USA
  2. Applied Physics Program, Smalley-Curl Institute, Rice University, 6100 Main Street, Houston, Texas 77005, USA
  3. National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
  4. Department of Physics and Astronomy, Rice, University, Houston, Texas 77005, USA, Department of Electrical and Computer Engineering, Rice University, 6100 Main Street, Houston, Texas 77005, USA, Department of Materials Science and NanoEngineering, Rice University, 6100 Main Street, Houston, Texas 77005, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1571334
Grant/Contract Number:  
FG02-06ER46337
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
AIP Advances
Additional Journal Information:
Journal Name: AIP Advances Journal Volume: 9 Journal Issue: 10; Journal ID: ISSN 2158-3226
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Zhao, Xuanhan, Zhou, Panpan, Chen, Liyang, Watanabe, Kenji, Taniguchi, Takashi, and Natelson, Douglas. Tunneling noise and defects in exfoliated hexagonal boron nitride. United States: N. p., 2019. Web. doi:10.1063/1.5126129.
Zhao, Xuanhan, Zhou, Panpan, Chen, Liyang, Watanabe, Kenji, Taniguchi, Takashi, & Natelson, Douglas. Tunneling noise and defects in exfoliated hexagonal boron nitride. United States. doi:10.1063/1.5126129.
Zhao, Xuanhan, Zhou, Panpan, Chen, Liyang, Watanabe, Kenji, Taniguchi, Takashi, and Natelson, Douglas. Tue . "Tunneling noise and defects in exfoliated hexagonal boron nitride". United States. doi:10.1063/1.5126129.
@article{osti_1571334,
title = {Tunneling noise and defects in exfoliated hexagonal boron nitride},
author = {Zhao, Xuanhan and Zhou, Panpan and Chen, Liyang and Watanabe, Kenji and Taniguchi, Takashi and Natelson, Douglas},
abstractNote = {},
doi = {10.1063/1.5126129},
journal = {AIP Advances},
number = 10,
volume = 9,
place = {United States},
year = {2019},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.5126129

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Works referenced in this record:

Boron nitride substrates for high-quality graphene electronics
journal, August 2010

  • Dean, C. R.; Young, A. F.; Meric, I.
  • Nature Nanotechnology, Vol. 5, Issue 10, p. 722-726
  • DOI: 10.1038/nnano.2010.172