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Controlled Doping of Large-Area Trilayer MoS 2 with Molecular Reductants and Oxidants
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journal
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January 2015 |
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Effect of the damping function in dispersion corrected density functional theory
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March 2011 |
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Two-dimensional semiconductors with possible high room temperature mobility
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September 2014 |
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First principle study of unzipped zinc oxide nanotubes
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October 2010 |
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Strain engineering of electronic properties of transition metal dichalcogenide monolayers
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February 2016 |
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Strain Engineering for Transition Metal Dichalcogenides Based Field Effect Transistors
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journal
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April 2016 |
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Tuning Electronic and Magnetic Properties of Early Transition-Metal Dichalcogenides via Tensile Strain
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March 2014 |
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MoS 2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap
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June 2012 |
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Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium
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April 2013 |
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Bandgap Engineering of Strained Monolayer and Bilayer MoS2
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July 2013 |
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Electronic Structure of a Quasi-Freestanding MoS 2 Monolayer
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February 2014 |
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Integrated Circuits and Logic Operations Based on Single-Layer MoS 2
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November 2011 |
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Evidence of the Existence of Magnetism in Pristine VX 2 Monolayers (X = S, Se) and Their Strain-Induced Tunable Magnetic Properties
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January 2012 |
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Tensile Strain Switched Ferromagnetism in Layered NbS 2 and NbSe 2
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journal
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October 2012 |
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Atomic-Scale Clarification of Structural Transition of MoS 2 upon Sodium Intercalation
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November 2014 |
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HfSe 2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy
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journal
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December 2014 |
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The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
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journal
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April 2013 |
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Single-layer MoS2 transistors
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journal
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January 2011 |
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Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
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journal
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November 2012 |
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Valley polarization in MoS2 monolayers by optical pumping
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journal
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June 2012 |
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Ultrasensitive photodetectors based on monolayer MoS2
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journal
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June 2013 |
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Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2
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journal
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December 2013 |
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Negative electronic compressibility and tunable spin splitting in WSe2
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journal
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September 2015 |
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Zeeman-type spin splitting controlled by an electric field
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journal
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July 2013 |
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Direct observation of spin-polarized bulk bands in an inversion-symmetric semiconductor
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journal
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October 2014 |
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Electronic structure of AlFeN films exhibiting crystallographic orientation change from c- to a-axis with Fe concentrations and annealing effect
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journal
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February 2020 |
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Intercalation in two-dimensional transition metal chalcogenides
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journal
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January 2016 |
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Straintronics in two-dimensional in-plane heterostructures of transition-metal dichalcogenides
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journal
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January 2017 |
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Strain modulated band gap of edge passivated armchair graphene nanoribbons
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journal
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January 2011 |
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Two-dimensional semiconductor HfSe 2 and MoSe 2 /HfSe 2 van der Waals heterostructures by molecular beam epitaxy
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journal
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April 2015 |
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Electrical characterization of multilayer HfSe 2 field-effect transistors on SiO 2 substrate
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journal
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April 2015 |
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Phase engineering of monolayer transition-metal dichalcogenide through coupled electron doping and lattice deformation
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journal
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November 2015 |
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Optical detection of strain and doping inhomogeneities in single layer MoS 2
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journal
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April 2016 |
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The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties
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journal
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May 1969 |
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Electronic properties of intercalation complexes of the transition metal dichalcogenides
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journal
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January 1987 |
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Spin–orbit coupling in the band structure of monolayer WSe 2
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journal
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April 2015 |
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Suppression and emergence of charge-density waves at the surfaces of layered 1 T -TiSe 2 and 1 T -TaS 2 by in situ Rb deposition
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journal
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December 2010 |
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Electronic structure of MoSe 2 , MoS 2 , and WSe 2 . I. Band-structure calculations and photoelectron spectroscopy
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journal
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April 1987 |
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Deformation potentials at the valence-band maximum in semiconductors
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journal
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August 1987 |
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Band-edge deformation potentials in a tight-binding framework
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journal
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May 1988 |
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Structure of single-molecular-layer MoS 2
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journal
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May 1991 |
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Strain-induced valence-subband splitting in III-V semiconductors
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journal
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September 1992 |
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Projector augmented-wave method
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journal
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December 1994 |
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Band-gap engineering with HfS x Se 2 − x
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journal
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February 2004 |
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Band Structures of Transition-Metal-Dichalcogenide Layer Compounds
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journal
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October 1973 |
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Electronic and Magnetic Properties of Quasifreestanding Graphene on Ni
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journal
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October 2008 |
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Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation
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journal
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December 2009 |
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Generalized Gradient Approximation Made Simple
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journal
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October 1996 |
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Generalized Gradient Approximation Made Simple [Phys. Rev. Lett. 77, 3865 (1996)]
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journal
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February 1997 |
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Evolution of the Electronic Structure of 1 T − Cu x TiSe 2
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journal
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October 2007 |
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Two-Dimensional Materials from Data Filtering and Ab Initio Calculations
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journal
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July 2013 |
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Hierarchical spin-orbital polarization of a giant Rashba system
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journal
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September 2015 |
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Electrical Anisotropy of Layered Compound ZrSe 2 and HfSe 2
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journal
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February 1989 |
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Strain modulated band gap of edge passivated armchair graphene nanoribbons
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text
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January 2011 |
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Two dimensional semiconductors with possible high room temperature mobility
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text
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January 2014 |
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Optical detection of strain and doping inhomogenieties in single layer MoS2
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text
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January 2018 |