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Title: Effect of Ge substitution on magnetic properties in the itinerant chiral magnet MnSi

Abstract

We have investigated the effect of Ge substitution on the magnetic ordering in the B20 itinerant chiral magnet MnSi prepared by melting and annealing under ambient pressure. From a metallurgical survey, the solubility limit of Ge was found to be x = 0.144(5) with annealing temperature T an = 1073 K. Magnetization measurements on MnSi 1–xGe x samples show that the helical ordering temperature T c increases rapidly in the low-x range, whereas it becomes saturated at higher concentration x > 0.1. Here, the Ge substitution also increases both the saturation magnetization M s and the critical field to the fully polarized state H c2. In contrast to the saturation behavior of T c, those parameters increase linearly up to the highest Ge concentration investigated. In the temperature-magnetic field phase diagram, we found enlargement of the skyrmion phase region for large x samples. We, furthermore, observed the nonlinear behavior of helical modulation vector k as a function of Ge concentration, which can be described qualitatively using the mean field approximation.

Authors:
ORCiD logo [1];  [1];  [1]; ORCiD logo [1]; ORCiD logo [2];  [1]
  1. Tohoku Univ., Sendai (Japan)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1570897
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Volume: 3; Journal Issue: 10; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Aji, Seno, Ishida, Hidesato, Okuyama, Daisuke, Nawa, Kazuhiro, Hong, Tao, and Sato, Taku J. Effect of Ge substitution on magnetic properties in the itinerant chiral magnet MnSi. United States: N. p., 2019. Web. doi:10.1103/PhysRevMaterials.3.104408.
Aji, Seno, Ishida, Hidesato, Okuyama, Daisuke, Nawa, Kazuhiro, Hong, Tao, & Sato, Taku J. Effect of Ge substitution on magnetic properties in the itinerant chiral magnet MnSi. United States. doi:10.1103/PhysRevMaterials.3.104408.
Aji, Seno, Ishida, Hidesato, Okuyama, Daisuke, Nawa, Kazuhiro, Hong, Tao, and Sato, Taku J. Mon . "Effect of Ge substitution on magnetic properties in the itinerant chiral magnet MnSi". United States. doi:10.1103/PhysRevMaterials.3.104408.
@article{osti_1570897,
title = {Effect of Ge substitution on magnetic properties in the itinerant chiral magnet MnSi},
author = {Aji, Seno and Ishida, Hidesato and Okuyama, Daisuke and Nawa, Kazuhiro and Hong, Tao and Sato, Taku J.},
abstractNote = {We have investigated the effect of Ge substitution on the magnetic ordering in the B20 itinerant chiral magnet MnSi prepared by melting and annealing under ambient pressure. From a metallurgical survey, the solubility limit of Ge was found to be x = 0.144(5) with annealing temperature Tan = 1073 K. Magnetization measurements on MnSi1–xGex samples show that the helical ordering temperature Tc increases rapidly in the low-x range, whereas it becomes saturated at higher concentration x > 0.1. Here, the Ge substitution also increases both the saturation magnetization Ms and the critical field to the fully polarized state Hc2. In contrast to the saturation behavior of Tc, those parameters increase linearly up to the highest Ge concentration investigated. In the temperature-magnetic field phase diagram, we found enlargement of the skyrmion phase region for large x samples. We, furthermore, observed the nonlinear behavior of helical modulation vector k as a function of Ge concentration, which can be described qualitatively using the mean field approximation.},
doi = {10.1103/PhysRevMaterials.3.104408},
journal = {Physical Review Materials},
number = 10,
volume = 3,
place = {United States},
year = {2019},
month = {10}
}

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