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Title: Carrier localization in perovskite nickelates from oxygen vacancies

Abstract

Point defects, such as oxygen vacancies, control the physical properties of complex oxides, relevant in active areas of research from superconductivity to resistive memory to catalysis. In most oxide semiconductors, electrons that are associated with oxygen vacancies occupy the conduction band, leading to an increase in the electrical conductivity. Here we demonstrate, in contrast, that in the correlated-electron perovskite rare-earth nickelates, R NiO 3 ( R is a rare-earth element such as Sm or Nd), electrons associated with oxygen vacancies strongly localize, leading to a dramatic decrease in the electrical conductivity by several orders of magnitude. This unusual behavior is found to stem from the combination of crystal field splitting and filling-controlled Mott–Hubbard electron–electron correlations in the Ni 3 d orbitals. Furthermore, we show the distribution of oxygen vacancies in NdNiO 3 can be controlled via an electric field, leading to analog resistance switching behavior. This study demonstrates the potential of nickelates as testbeds to better understand emergent physics in oxide heterostructures as well as candidate systems in the emerging fields of artificial intelligence.

Authors:
; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1570476
Grant/Contract Number:  
SC0008630
Resource Type:
Published Article
Journal Name:
Proceedings of the National Academy of Sciences of the United States of America
Additional Journal Information:
Journal Name: Proceedings of the National Academy of Sciences of the United States of America Journal Volume: 116 Journal Issue: 44; Journal ID: ISSN 0027-8424
Publisher:
Proceedings of the National Academy of Sciences
Country of Publication:
United States
Language:
English

Citation Formats

Kotiuga, Michele, Zhang, Zhen, Li, Jiarui, Rodolakis, Fanny, Zhou, Hua, Sutarto, Ronny, He, Feizhou, Wang, Qi, Sun, Yifei, Wang, Ying, Aghamiri, Neda Alsadat, Hancock, Steven Bennett, Rokhinson, Leonid P., Landau, David P., Abate, Yohannes, Freeland, John W., Comin, Riccardo, Ramanathan, Shriram, and Rabe, Karin M. Carrier localization in perovskite nickelates from oxygen vacancies. United States: N. p., 2019. Web. doi:10.1073/pnas.1910490116.
Kotiuga, Michele, Zhang, Zhen, Li, Jiarui, Rodolakis, Fanny, Zhou, Hua, Sutarto, Ronny, He, Feizhou, Wang, Qi, Sun, Yifei, Wang, Ying, Aghamiri, Neda Alsadat, Hancock, Steven Bennett, Rokhinson, Leonid P., Landau, David P., Abate, Yohannes, Freeland, John W., Comin, Riccardo, Ramanathan, Shriram, & Rabe, Karin M. Carrier localization in perovskite nickelates from oxygen vacancies. United States. doi:10.1073/pnas.1910490116.
Kotiuga, Michele, Zhang, Zhen, Li, Jiarui, Rodolakis, Fanny, Zhou, Hua, Sutarto, Ronny, He, Feizhou, Wang, Qi, Sun, Yifei, Wang, Ying, Aghamiri, Neda Alsadat, Hancock, Steven Bennett, Rokhinson, Leonid P., Landau, David P., Abate, Yohannes, Freeland, John W., Comin, Riccardo, Ramanathan, Shriram, and Rabe, Karin M. Mon . "Carrier localization in perovskite nickelates from oxygen vacancies". United States. doi:10.1073/pnas.1910490116.
@article{osti_1570476,
title = {Carrier localization in perovskite nickelates from oxygen vacancies},
author = {Kotiuga, Michele and Zhang, Zhen and Li, Jiarui and Rodolakis, Fanny and Zhou, Hua and Sutarto, Ronny and He, Feizhou and Wang, Qi and Sun, Yifei and Wang, Ying and Aghamiri, Neda Alsadat and Hancock, Steven Bennett and Rokhinson, Leonid P. and Landau, David P. and Abate, Yohannes and Freeland, John W. and Comin, Riccardo and Ramanathan, Shriram and Rabe, Karin M.},
abstractNote = {Point defects, such as oxygen vacancies, control the physical properties of complex oxides, relevant in active areas of research from superconductivity to resistive memory to catalysis. In most oxide semiconductors, electrons that are associated with oxygen vacancies occupy the conduction band, leading to an increase in the electrical conductivity. Here we demonstrate, in contrast, that in the correlated-electron perovskite rare-earth nickelates, R NiO 3 ( R is a rare-earth element such as Sm or Nd), electrons associated with oxygen vacancies strongly localize, leading to a dramatic decrease in the electrical conductivity by several orders of magnitude. This unusual behavior is found to stem from the combination of crystal field splitting and filling-controlled Mott–Hubbard electron–electron correlations in the Ni 3 d orbitals. Furthermore, we show the distribution of oxygen vacancies in NdNiO 3 can be controlled via an electric field, leading to analog resistance switching behavior. This study demonstrates the potential of nickelates as testbeds to better understand emergent physics in oxide heterostructures as well as candidate systems in the emerging fields of artificial intelligence.},
doi = {10.1073/pnas.1910490116},
journal = {Proceedings of the National Academy of Sciences of the United States of America},
number = 44,
volume = 116,
place = {United States},
year = {2019},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1073/pnas.1910490116

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