Wide-Bandgap Cu(In,Ga)S 2 Photocathodes Integrated on Transparent Conductive F:SnO2 Substrates for Chalcopyrite-Based Water Splitting Tandem Devices
- Authors:
-
- Univ. of Hawaii, Honolulu, HI (United States)
- Univ. of Hawaii, Honolulu, HI (United States); Maharishi Markandeshwar Univ., Mullana, HR (India)
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Publication Date:
- Research Org.:
- Univ. of Hawaii, Honolulu, HI (United States); Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Sustainable Transportation Office. Hydrogen Fuel Cell Technologies Office; USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1570457
- Alternate Identifier(s):
- OSTI ID: 1662038
- Report Number(s):
- LLNL-JRNL-806829
Journal ID: ISSN 2574-0962
- Grant/Contract Number:
- EE0006670; AC52-07NA27344
- Resource Type:
- Accepted Manuscript
- Journal Name:
- ACS Applied Energy Materials
- Additional Journal Information:
- Journal Volume: 2; Journal Issue: 8; Journal ID: ISSN 2574-0962
- Publisher:
- American Chemical Society (ACS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 08 HYDROGEN; photoelectrochemical hydrogen production; water splitting; copper chalcopyrites; Cu(In,Ga)S2; CuGaSe2; transparent conductive oxide substrate; F:SnO2; FTO; Materials science
Citation Formats
Gaillard, Nicolas, Prasher, Dixit, Chong, Marina, Deangelis, Alexander, Horsley, Kimberly, Ishii, Hope A., Bradley, John P., Varley, Joel, and Ogitsu, Tadashi. Wide-Bandgap Cu(In,Ga)S 2 Photocathodes Integrated on Transparent Conductive F:SnO2 Substrates for Chalcopyrite-Based Water Splitting Tandem Devices. United States: N. p., 2019.
Web. doi:10.1021/acsaem.9b00690.
Gaillard, Nicolas, Prasher, Dixit, Chong, Marina, Deangelis, Alexander, Horsley, Kimberly, Ishii, Hope A., Bradley, John P., Varley, Joel, & Ogitsu, Tadashi. Wide-Bandgap Cu(In,Ga)S 2 Photocathodes Integrated on Transparent Conductive F:SnO2 Substrates for Chalcopyrite-Based Water Splitting Tandem Devices. United States. https://doi.org/10.1021/acsaem.9b00690
Gaillard, Nicolas, Prasher, Dixit, Chong, Marina, Deangelis, Alexander, Horsley, Kimberly, Ishii, Hope A., Bradley, John P., Varley, Joel, and Ogitsu, Tadashi. Thu .
"Wide-Bandgap Cu(In,Ga)S 2 Photocathodes Integrated on Transparent Conductive F:SnO2 Substrates for Chalcopyrite-Based Water Splitting Tandem Devices". United States. https://doi.org/10.1021/acsaem.9b00690. https://www.osti.gov/servlets/purl/1570457.
@article{osti_1570457,
title = {Wide-Bandgap Cu(In,Ga)S 2 Photocathodes Integrated on Transparent Conductive F:SnO2 Substrates for Chalcopyrite-Based Water Splitting Tandem Devices},
author = {Gaillard, Nicolas and Prasher, Dixit and Chong, Marina and Deangelis, Alexander and Horsley, Kimberly and Ishii, Hope A. and Bradley, John P. and Varley, Joel and Ogitsu, Tadashi},
abstractNote = {},
doi = {10.1021/acsaem.9b00690},
journal = {ACS Applied Energy Materials},
number = 8,
volume = 2,
place = {United States},
year = {Thu Jul 25 00:00:00 EDT 2019},
month = {Thu Jul 25 00:00:00 EDT 2019}
}
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Cited by: 13 works
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Figures / Tables:
Figure 1: Top view scanning electron micrographs of (a) as-deposited and (b) sulfurized ‘0.7-series’ Cu(In,Ga)Se2 thin film. All micrographs were taken with a 20 kV acceleration voltage and a magnification of x 40,000.
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