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Title: High temperature synthesis and characterization of ultrathin tellurium nanostructures

Abstract

Thin tellurium (Te) has been predicted as a potential two dimensional system exhibiting superior thermoelectric and electrical properties. Here, we report the synthesis of high quality ultrathin Te nanostructures and the study of their electrical properties at room temperature. High quality ultrathin Te nanostructures are obtained by high temperature vapor phase deposition on c-plane sapphire substrates. The obtained nanostructures are as thin as 3 nm and exhibit α-Te phase with trigonal crystal structure. Room temperature electrical measurements show significantly higher electrical conductivity compared to prior reports of Te in bulk form or in nanostructure form synthesized by low temperature vapor deposition or wet chemical methods. Furthermore, these nanostructures exhibit high field effect hole mobility comparable to black-phosphorous measured previously under similar conditions.

Authors:
 [1];  [1];  [1]; ORCiD logo [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Laboratories, Livermore, CA (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1570295
Report Number(s):
SAND-2019-10117J
Journal ID: ISSN 2166-532X; 678888
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 7; Journal Issue: 8; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Sapkota, Keshab R., Lu, Ping, Medlin, Douglas L., and Wang, George T. High temperature synthesis and characterization of ultrathin tellurium nanostructures. United States: N. p., 2019. Web. doi:10.1063/1.5109899.
Sapkota, Keshab R., Lu, Ping, Medlin, Douglas L., & Wang, George T. High temperature synthesis and characterization of ultrathin tellurium nanostructures. United States. doi:10.1063/1.5109899.
Sapkota, Keshab R., Lu, Ping, Medlin, Douglas L., and Wang, George T. Thu . "High temperature synthesis and characterization of ultrathin tellurium nanostructures". United States. doi:10.1063/1.5109899. https://www.osti.gov/servlets/purl/1570295.
@article{osti_1570295,
title = {High temperature synthesis and characterization of ultrathin tellurium nanostructures},
author = {Sapkota, Keshab R. and Lu, Ping and Medlin, Douglas L. and Wang, George T.},
abstractNote = {Thin tellurium (Te) has been predicted as a potential two dimensional system exhibiting superior thermoelectric and electrical properties. Here, we report the synthesis of high quality ultrathin Te nanostructures and the study of their electrical properties at room temperature. High quality ultrathin Te nanostructures are obtained by high temperature vapor phase deposition on c-plane sapphire substrates. The obtained nanostructures are as thin as 3 nm and exhibit α-Te phase with trigonal crystal structure. Room temperature electrical measurements show significantly higher electrical conductivity compared to prior reports of Te in bulk form or in nanostructure form synthesized by low temperature vapor deposition or wet chemical methods. Furthermore, these nanostructures exhibit high field effect hole mobility comparable to black-phosphorous measured previously under similar conditions.},
doi = {10.1063/1.5109899},
journal = {APL Materials},
number = 8,
volume = 7,
place = {United States},
year = {2019},
month = {8}
}

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