High temperature synthesis and characterization of ultrathin tellurium nanostructures

Sapkota, Keshab R.; Lu, Ping; Medlin, Douglas L.; Wang, George T.

doi:10.1063/1.5109899

Title: High temperature synthesis and characterization of ultrathin tellurium nanostructures

Journal Article · 01 August 2019 · APL Materials

DOI: https://doi.org/10.1063/1.5109899 · OSTI ID:1570295

Sapkota, Keshab R. ^[1]; Lu, Ping ^[1]; Medlin, Douglas L. ^[1];

^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Thin tellurium (Te) has been predicted as a potential two dimensional system exhibiting superior thermoelectric and electrical properties. Here, we report the synthesis of high quality ultrathin Te nanostructures and the study of their electrical properties at room temperature. High quality ultrathin Te nanostructures are obtained by high temperature vapor phase deposition on c-plane sapphire substrates. The obtained nanostructures are as thin as 3 nm and exhibit α-Te phase with trigonal crystal structure. Room temperature electrical measurements show significantly higher electrical conductivity compared to prior reports of Te in bulk form or in nanostructure form synthesized by low temperature vapor deposition or wet chemical methods. Furthermore, these nanostructures exhibit high field effect hole mobility comparable to black-phosphorous measured previously under similar conditions.

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Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Sandia National Laboratories, Livermore, CA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1570295

Report Number(s):: SAND--2019-10117J; 678888

Journal Information:: APL Materials, Journal Name: APL Materials Journal Issue: 8 Vol. 7; ISSN 2166-532X

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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