Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor

Lundh, James Spencer; Chatterjee, Bikramjit; Song, Yiwen; Baca, Albert G.; Kaplar, Robert J.; Beechem, Thomas E.; Allerman, Andrew A.; Armstrong, Andrew M.; Klein, Brianna A.; Bansal, Anushka; Talreja, Disha; Pogrebnyakov, Alexej; Heller, Eric; Gopalan, Venkatraman; Redwing, Joan M.; Foley, Brian M.; Choi, Sukwon

doi:10.1063/1.5115013

Title: Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor

Journal Article · 06 October 2019 · Applied Physics Letters

DOI: https://doi.org/10.1063/1.5115013 · OSTI ID:1570273

^[1];

^[1]; Song, Yiwen ^[1];

^[2];

^[2]; Beechem, Thomas E. ^[2]; Allerman, Andrew A. ^[2];

^[2]; Klein, Brianna A. ^[2];

^[1]; Talreja, Disha ^[1];

^[1];

^[3]; Gopalan, Venkatraman ^[1];

^[1]; Foley, Brian M. ^[1];

^[1]

Pennsylvania State Univ., University Park, PA (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States)

Improvements in radio frequency and power electronics can potentially be realized with ultrawide bandgap materials such as aluminum gallium nitride (AlxGa_1-xN). Multidimensional thermal characterization of an Al_0.30Ga_0.70N channel high electron mobility transistor (HEMT) was done using Raman spectroscopy and thermoreflectance thermal imaging to experimentally determine the lateral and vertical steady-state operating temperature profiles. An electrothermal model of the Al_0.30Ga_0.70N channel HEMT was developed to validate the experimental results and investigate potential device-level thermal management. While the low thermal conductivity of this III-N ternary alloy system results in more device self-heating at room temperature, the temperature insensitive thermal and electrical output characteristics of Al_xGa_1-xN may open the door for extreme temperature applications.

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Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1570273

Report Number(s):: SAND--2019-11875J; 679962

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 115; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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