Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor

doi:10.1063/1.5115013

This content will become publicly available on October 7, 2020

Title: Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor

Abstract

Improvements in radio frequency and power electronics can potentially be realized with ultrawide bandgap materials such as aluminum gallium nitride (AlxGa _1-xN). Multidimensional thermal characterization of an Al _0.30Ga _0.70N channel high electron mobility transistor (HEMT) was done using Raman spectroscopy and thermoreflectance thermal imaging to experimentally determine the lateral and vertical steady-state operating temperature profiles. An electrothermal model of the Al _0.30Ga _0.70N channel HEMT was developed to validate the experimental results and investigate potential device-level thermal management. While the low thermal conductivity of this III-N ternary alloy system results in more device self-heating at room temperature, the temperature insensitive thermal and electrical output characteristics of Al _xGa _1-xN may open the door for extreme temperature applications.

Authors:

^[1];

^[1]; Song, Yiwen ^[1];

^[2];

^[2]; Beechem, Thomas E. ^[2]; Allerman, Andrew A. ^[2];

^[2]; Klein, Brianna A. ^[2];

^[1]; Talreja, Disha ^[1];

^[1];

^[3]; Gopalan, Venkatraman ^[1];

^[1]; Foley, Brian M. ^[1];

^[1]

Pennsylvania State Univ., University Park, PA (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States)

Publication Date:: 2019-10-07

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1570273

Report Number(s):: SAND-2019-11875J
Journal ID: ISSN 0003-6951; 679962

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 115; Journal Issue: 15; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Lundh, James Spencer, Chatterjee, Bikramjit, Song, Yiwen, Baca, Albert G., Kaplar, Robert J., Beechem, Thomas E., Allerman, Andrew A., Armstrong, Andrew M., Klein, Brianna A., Bansal, Anushka, Talreja, Disha, Pogrebnyakov, Alexej, Heller, Eric, Gopalan, Venkatraman, Redwing, Joan M., Foley, Brian M., and Choi, Sukwon. Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor.  United States: N. p., 2019. 
        Web.  doi:10.1063/1.5115013.

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                    Lundh, James Spencer, Chatterjee, Bikramjit, Song, Yiwen, Baca, Albert G., Kaplar, Robert J., Beechem, Thomas E., Allerman, Andrew A., Armstrong, Andrew M., Klein, Brianna A., Bansal, Anushka, Talreja, Disha, Pogrebnyakov, Alexej, Heller, Eric, Gopalan, Venkatraman, Redwing, Joan M., Foley, Brian M., & Choi, Sukwon. Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor.  United States.  doi:10.1063/1.5115013.

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                    Lundh, James Spencer, Chatterjee, Bikramjit, Song, Yiwen, Baca, Albert G., Kaplar, Robert J., Beechem, Thomas E., Allerman, Andrew A., Armstrong, Andrew M., Klein, Brianna A., Bansal, Anushka, Talreja, Disha, Pogrebnyakov, Alexej, Heller, Eric, Gopalan, Venkatraman, Redwing, Joan M., Foley, Brian M., and Choi, Sukwon. Mon .  
        "Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor".  United States.  doi:10.1063/1.5115013.

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@article{osti_1570273,

  title        = {Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor},

  author       = {Lundh, James Spencer and Chatterjee, Bikramjit and Song, Yiwen and Baca, Albert G. and Kaplar, Robert J. and Beechem, Thomas E. and Allerman, Andrew A. and Armstrong, Andrew M. and Klein, Brianna A. and Bansal, Anushka and Talreja, Disha and Pogrebnyakov, Alexej and Heller, Eric and Gopalan, Venkatraman and Redwing, Joan M. and Foley, Brian M. and Choi, Sukwon},

  abstractNote = {Improvements in radio frequency and power electronics can potentially be realized with ultrawide bandgap materials such as aluminum gallium nitride (AlxGa1-xN). Multidimensional thermal characterization of an Al0.30Ga0.70N channel high electron mobility transistor (HEMT) was done using Raman spectroscopy and thermoreflectance thermal imaging to experimentally determine the lateral and vertical steady-state operating temperature profiles. An electrothermal model of the Al0.30Ga0.70N channel HEMT was developed to validate the experimental results and investigate potential device-level thermal management. While the low thermal conductivity of this III-N ternary alloy system results in more device self-heating at room temperature, the temperature insensitive thermal and electrical output characteristics of AlxGa1-xN may open the door for extreme temperature applications.},

  doi          = {10.1063/1.5115013},

  journal      = {Applied Physics Letters},

  number       = 15,

  volume       = 115,

  place        = {United States},

  year         = {2019},

  month        = {10}

}

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Similar Records

This content will become publicly available on October 7, 2020

Title: Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor

Abstract

Citation Formats

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Bonding Pad Over Active Structure for Chip Shrinkage of High-Power AlGaN/GaN HFETs
journal, February 2016

AlGaN channel field effect transistors with graded heterostructure ohmic contacts
journal, September 2016

A frequency-domain thermoreflectance method for the characterization of thermal properties
journal, September 2009

Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices
journal, December 2016

Optical pump-and-probe measurement of the thermal conductivity of nitride thin films
journal, October 2002

The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs
journal, May 2012

Electrical and structural dependence of operating temperature of AlGaN/GaN HEMTs
journal, June 2013

The Impact of Bias Conditions on Self-Heating in AlGaN/GaN HEMTs
journal, January 2013

Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers
journal, February 2009

Planar Ohmic Contacts to Al _0.45 Ga _0.55 N/Al _0.3 Ga _0.7 N High Electron Mobility Transistors
journal, January 2017

Nanocrystalline Diamond Integration with III-Nitride HEMTs
journal, October 2016

Ohmic contacts to Al-rich AlGaN heterostructures: Ohmic contacts to Al-rich AlGaN heterostructures
journal, June 2017

Fundamental Cooling Limits for High Power Density Gallium Nitride Electronics
journal, June 2015

Analysis of 2D Transport and Performance Characteristics for Lateral Power Devices Based on AlGaN Alloys
journal, January 2017

Generation-After-Next Power Electronics: Ultrawide-bandgap devices, high-temperature packaging, and magnetic nanocomposite materials
journal, March 2017

High Temperature Operation of Al _0.45 Ga _0.55 N/Al _0.30 Ga _0.70 N High Electron Mobility Transistors
journal, January 2017

AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit
journal, May 2008

Thermal characterization of gallium nitride p-i-n diodes
journal, February 2018

A comparative study of surface passivation on AlGaN/GaN HEMTs
journal, September 2002

Electro-thermo-mechanical modeling of GaN-based HFETs and MOSHFETs
journal, June 2011

High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate
journal, December 2010

Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures
journal, October 2006

Heat Dissipation in High-Power GaN Electronics on Thermally Resistive Substrates
journal, August 2005