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Title: Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor

Abstract

Improvements in radio frequency and power electronics can potentially be realized with ultrawide bandgap materials such as aluminum gallium nitride (AlxGa 1-xN). Multidimensional thermal characterization of an Al 0.30Ga 0.70N channel high electron mobility transistor (HEMT) was done using Raman spectroscopy and thermoreflectance thermal imaging to experimentally determine the lateral and vertical steady-state operating temperature profiles. An electrothermal model of the Al 0.30Ga 0.70N channel HEMT was developed to validate the experimental results and investigate potential device-level thermal management. While the low thermal conductivity of this III-N ternary alloy system results in more device self-heating at room temperature, the temperature insensitive thermal and electrical output characteristics of Al xGa 1-xN may open the door for extreme temperature applications.

Authors:
ORCiD logo [1]; ORCiD logo [1];  [1]; ORCiD logo [2]; ORCiD logo [2];  [2];  [2]; ORCiD logo [2];  [2]; ORCiD logo [1];  [1]; ORCiD logo [1]; ORCiD logo [3];  [1]; ORCiD logo [1];  [1]; ORCiD logo [1]
  1. Pennsylvania State Univ., University Park, PA (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  3. Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1570273
Report Number(s):
SAND-2019-11875J
Journal ID: ISSN 0003-6951; 679962
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 115; Journal Issue: 15; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Lundh, James Spencer, Chatterjee, Bikramjit, Song, Yiwen, Baca, Albert G., Kaplar, Robert J., Beechem, Thomas E., Allerman, Andrew A., Armstrong, Andrew M., Klein, Brianna A., Bansal, Anushka, Talreja, Disha, Pogrebnyakov, Alexej, Heller, Eric, Gopalan, Venkatraman, Redwing, Joan M., Foley, Brian M., and Choi, Sukwon. Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor. United States: N. p., 2019. Web. doi:10.1063/1.5115013.
Lundh, James Spencer, Chatterjee, Bikramjit, Song, Yiwen, Baca, Albert G., Kaplar, Robert J., Beechem, Thomas E., Allerman, Andrew A., Armstrong, Andrew M., Klein, Brianna A., Bansal, Anushka, Talreja, Disha, Pogrebnyakov, Alexej, Heller, Eric, Gopalan, Venkatraman, Redwing, Joan M., Foley, Brian M., & Choi, Sukwon. Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor. United States. doi:10.1063/1.5115013.
Lundh, James Spencer, Chatterjee, Bikramjit, Song, Yiwen, Baca, Albert G., Kaplar, Robert J., Beechem, Thomas E., Allerman, Andrew A., Armstrong, Andrew M., Klein, Brianna A., Bansal, Anushka, Talreja, Disha, Pogrebnyakov, Alexej, Heller, Eric, Gopalan, Venkatraman, Redwing, Joan M., Foley, Brian M., and Choi, Sukwon. Mon . "Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor". United States. doi:10.1063/1.5115013.
@article{osti_1570273,
title = {Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor},
author = {Lundh, James Spencer and Chatterjee, Bikramjit and Song, Yiwen and Baca, Albert G. and Kaplar, Robert J. and Beechem, Thomas E. and Allerman, Andrew A. and Armstrong, Andrew M. and Klein, Brianna A. and Bansal, Anushka and Talreja, Disha and Pogrebnyakov, Alexej and Heller, Eric and Gopalan, Venkatraman and Redwing, Joan M. and Foley, Brian M. and Choi, Sukwon},
abstractNote = {Improvements in radio frequency and power electronics can potentially be realized with ultrawide bandgap materials such as aluminum gallium nitride (AlxGa1-xN). Multidimensional thermal characterization of an Al0.30Ga0.70N channel high electron mobility transistor (HEMT) was done using Raman spectroscopy and thermoreflectance thermal imaging to experimentally determine the lateral and vertical steady-state operating temperature profiles. An electrothermal model of the Al0.30Ga0.70N channel HEMT was developed to validate the experimental results and investigate potential device-level thermal management. While the low thermal conductivity of this III-N ternary alloy system results in more device self-heating at room temperature, the temperature insensitive thermal and electrical output characteristics of AlxGa1-xN may open the door for extreme temperature applications.},
doi = {10.1063/1.5115013},
journal = {Applied Physics Letters},
number = 15,
volume = 115,
place = {United States},
year = {2019},
month = {10}
}

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