Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor

doi:10.1063/1.5115013

Title: Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor

Abstract

Improvements in radio frequency and power electronics can potentially be realized with ultrawide bandgap materials such as aluminum gallium nitride (AlxGa_1-xN). Multidimensional thermal characterization of an Al_0.30Ga_0.70N channel high electron mobility transistor (HEMT) was done using Raman spectroscopy and thermoreflectance thermal imaging to experimentally determine the lateral and vertical steady-state operating temperature profiles. An electrothermal model of the Al_0.30Ga_0.70N channel HEMT was developed to validate the experimental results and investigate potential device-level thermal management. While the low thermal conductivity of this III-N ternary alloy system results in more device self-heating at room temperature, the temperature insensitive thermal and electrical output characteristics of Al_xGa_1-xN may open the door for extreme temperature applications.

Authors:

^[1];

^[1]; Song, Yiwen ^[1];

^[2];

^[2]; Beechem, Thomas E. ^[2]; Allerman, Andrew A. ^[2];

^[2]; Klein, Brianna A. ^[2];

^[1]; Talreja, Disha ^[1];

^[1];

^[3]; Gopalan, Venkatraman ^[1];

^[1]; Foley, Brian M. ^[1];

^[1]

Pennsylvania State Univ., University Park, PA (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States)

Publication Date:: 2019-10-07

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1570273

Report Number(s):: SAND-2019-11875J
Journal ID: ISSN 0003-6951; 679962; TRN: US2001107

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 115; Journal Issue: 15; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Lundh, James Spencer, Chatterjee, Bikramjit, Song, Yiwen, Baca, Albert G., Kaplar, Robert J., Beechem, Thomas E., Allerman, Andrew A., Armstrong, Andrew M., Klein, Brianna A., Bansal, Anushka, Talreja, Disha, Pogrebnyakov, Alexej, Heller, Eric, Gopalan, Venkatraman, Redwing, Joan M., Foley, Brian M., and Choi, Sukwon. Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor.  United States: N. p., 2019. 
        Web.  doi:10.1063/1.5115013.

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                    Lundh, James Spencer, Chatterjee, Bikramjit, Song, Yiwen, Baca, Albert G., Kaplar, Robert J., Beechem, Thomas E., Allerman, Andrew A., Armstrong, Andrew M., Klein, Brianna A., Bansal, Anushka, Talreja, Disha, Pogrebnyakov, Alexej, Heller, Eric, Gopalan, Venkatraman, Redwing, Joan M., Foley, Brian M., & Choi, Sukwon. Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor.  United States.  doi:10.1063/1.5115013.

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                    Lundh, James Spencer, Chatterjee, Bikramjit, Song, Yiwen, Baca, Albert G., Kaplar, Robert J., Beechem, Thomas E., Allerman, Andrew A., Armstrong, Andrew M., Klein, Brianna A., Bansal, Anushka, Talreja, Disha, Pogrebnyakov, Alexej, Heller, Eric, Gopalan, Venkatraman, Redwing, Joan M., Foley, Brian M., and Choi, Sukwon. Mon .  
        "Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor".  United States.  doi:10.1063/1.5115013.  https://www.osti.gov/servlets/purl/1570273.

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@article{osti_1570273,

  title        = {Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor},

  author       = {Lundh, James Spencer and Chatterjee, Bikramjit and Song, Yiwen and Baca, Albert G. and Kaplar, Robert J. and Beechem, Thomas E. and Allerman, Andrew A. and Armstrong, Andrew M. and Klein, Brianna A. and Bansal, Anushka and Talreja, Disha and Pogrebnyakov, Alexej and Heller, Eric and Gopalan, Venkatraman and Redwing, Joan M. and Foley, Brian M. and Choi, Sukwon},

  abstractNote = {Improvements in radio frequency and power electronics can potentially be realized with ultrawide bandgap materials such as aluminum gallium nitride (AlxGa1-xN). Multidimensional thermal characterization of an Al0.30Ga0.70N channel high electron mobility transistor (HEMT) was done using Raman spectroscopy and thermoreflectance thermal imaging to experimentally determine the lateral and vertical steady-state operating temperature profiles. An electrothermal model of the Al0.30Ga0.70N channel HEMT was developed to validate the experimental results and investigate potential device-level thermal management. While the low thermal conductivity of this III-N ternary alloy system results in more device self-heating at room temperature, the temperature insensitive thermal and electrical output characteristics of AlxGa1-xN may open the door for extreme temperature applications.},

  doi          = {10.1063/1.5115013},

  journal      = {Applied Physics Letters},

  number       = 15,

  volume       = 115,

  place        = {United States},

  year         = {2019},

  month        = {10}

}

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DOI: 10.1063/1.5115013

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Works referencing / citing this record:

Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors
journal, January 2020

Chatterjee, Bikramjit; Dundar, Canberk; Beechem, Thomas E.
Journal of Applied Physics, Vol. 127, Issue 4
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Title: Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor

Abstract

Citation Formats

Thermal Design and Characterization of Heterogeneously Integrated InGaP/GaAs HBTs journal, May 2016

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Temperature dependent analytical model for current–voltage characteristics of AlGaN/GaN power HEMT journal, March 2009

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Output power enhancement in AlGaN/GaN heterostructure field-effect transistors with multilevel metallization journal, December 2016

Thermometry of AlGaN/GaN HEMTs Using Multispectral Raman Features journal, June 2013

Simultaneous measurement of temperature and thermal stress in AlGaN/GaN high electron mobility transistors using Raman scattering spectroscopy journal, November 2009

GaN-Based High Temperature and Radiation-Hard Electronics for Harsh Environments journal, June 2010

Micro-Raman thermometry in the presence of complex stresses in GaN devices journal, June 2008

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Operation Up to 500 °C of Al 0.85 Ga 0.15 N/Al 0.7 Ga 0.3 N High Electron Mobility Transistors journal, January 2019

Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate journal, January 2001

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Simulation of Life Testing Procedures for Estimating Long-Term Degradation and Lifetime of AlGaN/GaN HEMTs journal, October 2008

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A frequency-domain thermoreflectance method for the characterization of thermal properties journal, September 2009

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Electrical and structural dependence of operating temperature of AlGaN/GaN HEMTs journal, June 2013

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Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers journal, February 2009

Planar Ohmic Contacts to Al 0.45 Ga 0.55 N/Al 0.3 Ga 0.7 N High Electron Mobility Transistors journal, January 2017

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Ohmic contacts to Al-rich AlGaN heterostructures: Ohmic contacts to Al-rich AlGaN heterostructures journal, June 2017

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journal, March 2009

A Numerical Study on Comparing the Active and Passive Cooling of AlGaN/GaN HEMTs
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Confocal Raman Microscopy: Performance, Pitfalls, and Best Practice: Invited Lecture at the Symposium “50 Years of SAS: Looking to the Future with Vibrational Spectroscopy” at Pittcon 2008, New Orleans, Louisiana
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Output power enhancement in AlGaN/GaN heterostructure field-effect transistors with multilevel metallization
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Simultaneous measurement of temperature and thermal stress in AlGaN/GaN high electron mobility transistors using Raman scattering spectroscopy
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Micro-Raman thermometry in the presence of complex stresses in GaN devices
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Study of two-dimensional electron gas in AlGaN channel HEMTs with high crystalline quality
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Thermal conduction in AlxGa1−xN alloys and thin films
journal, April 2005

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Size dictated thermal conductivity of GaN
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Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control
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Simulation of Life Testing Procedures for Estimating Long-Term Degradation and Lifetime of AlGaN/GaN HEMTs
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Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices
journal, December 2016

Optical pump-and-probe measurement of the thermal conductivity of nitride thin films
journal, October 2002

The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs
journal, May 2012

Electrical and structural dependence of operating temperature of AlGaN/GaN HEMTs
journal, June 2013

The Impact of Bias Conditions on Self-Heating in AlGaN/GaN HEMTs
journal, January 2013

Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers
journal, February 2009

Planar Ohmic Contacts to Al _0.45 Ga _0.55 N/Al _0.3 Ga _0.7 N High Electron Mobility Transistors
journal, January 2017

Nanocrystalline Diamond Integration with III-Nitride HEMTs
journal, October 2016

Ohmic contacts to Al-rich AlGaN heterostructures: Ohmic contacts to Al-rich AlGaN heterostructures
journal, June 2017

Fundamental Cooling Limits for High Power Density Gallium Nitride Electronics
journal, June 2015

Analysis of 2D Transport and Performance Characteristics for Lateral Power Devices Based on AlGaN Alloys
journal, January 2017

Generation-After-Next Power Electronics: Ultrawide-bandgap devices, high-temperature packaging, and magnetic nanocomposite materials
journal, March 2017

AlGaN Channel HEMT With Extremely High Breakdown Voltage
journal, March 2013

High Temperature Operation of Al _0.45 Ga _0.55 N/Al _0.30 Ga _0.70 N High Electron Mobility Transistors
journal, January 2017

AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit
journal, May 2008

Thermal characterization of gallium nitride p-i-n diodes
journal, February 2018

A comparative study of surface passivation on AlGaN/GaN HEMTs
journal, September 2002

Electro-thermo-mechanical modeling of GaN-based HFETs and MOSHFETs
journal, June 2011

High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate
journal, December 2010

Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures
journal, October 2006

Heat Dissipation in High-Power GaN Electronics on Thermally Resistive Substrates
journal, August 2005

Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors
journal, January 2020