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Title: W/TaC/SiC sandwich stack for high temperature applications

Abstract

High-temperature stability of the tungsten/tantalum carbide/silicon carbide (W/TaC/SiC) system was examined and compared to the tungsten/silicon carbide (W/SiC) system. Interfacial reactions, surface morphology, and roughness evolutions on thermal annealing at 1000 °C were systematically investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). For the W/SiC system, WC, W2C and W5Si3 phases were observed due to severe chemical reaction after 24 h annealing, which led to an inhomogeneous surface structure with several large craters and small pores, thereby increasing surface roughness greatly. On the other hand, there was no tungsten silicide and/or carbide formation upon annealing with a TaC diffusion barrier. The surface structure remained nearly unchanged, and small changes in surface roughness with annealing time, which could be due to the growth of W grains, were noted. Furthermore, both the as-deposited and the 24 h annealed W/TaC/SiC samples presented an excellent interfacial bonding with a dense uniform interface. The results indicate that TaC is a promising diffusion barrier in the W/SiC system for high temperature applications.

Authors:
 [1];  [2];  [2];  [2]
+ Show Author Affiliations
  1. Univ. of California, Berkeley, CA (United States); Harbin Institute of Technology (China)
  2. Univ. of California, Berkeley, CA (United States)
Publication Date:
Research Org.:
Stanford Univ., CA (United States)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E); USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1799053
Alternate Identifier(s):
OSTI ID: 1570092
Grant/Contract Number:  
AR0000664; AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Ceramics International
Additional Journal Information:
Journal Volume: 45; Journal Issue: 17; Journal ID: ISSN 0272-8842
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; W/TaC/SiC; high-temperature stability; diffusion barrier

Citation Formats

Wang, Zhongtao, DelaCruz, Steven, Tsai, Dung-Sheng, and Maboudian, Roya. W/TaC/SiC sandwich stack for high temperature applications. United States: N. p., 2019. Web. doi:10.1016/j.ceramint.2019.07.255.
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Wang, Zhongtao, DelaCruz, Steven, Tsai, Dung-Sheng, & Maboudian, Roya. W/TaC/SiC sandwich stack for high temperature applications. United States. https://doi.org/10.1016/j.ceramint.2019.07.255
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Wang, Zhongtao, DelaCruz, Steven, Tsai, Dung-Sheng, and Maboudian, Roya. Thu . "W/TaC/SiC sandwich stack for high temperature applications". United States. https://doi.org/10.1016/j.ceramint.2019.07.255. https://www.osti.gov/servlets/purl/1799053.
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@article{osti_1799053,
title = {W/TaC/SiC sandwich stack for high temperature applications},
author = {Wang, Zhongtao and DelaCruz, Steven and Tsai, Dung-Sheng and Maboudian, Roya},
abstractNote = {High-temperature stability of the tungsten/tantalum carbide/silicon carbide (W/TaC/SiC) system was examined and compared to the tungsten/silicon carbide (W/SiC) system. Interfacial reactions, surface morphology, and roughness evolutions on thermal annealing at 1000 °C were systematically investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). For the W/SiC system, WC, W2C and W5Si3 phases were observed due to severe chemical reaction after 24 h annealing, which led to an inhomogeneous surface structure with several large craters and small pores, thereby increasing surface roughness greatly. On the other hand, there was no tungsten silicide and/or carbide formation upon annealing with a TaC diffusion barrier. The surface structure remained nearly unchanged, and small changes in surface roughness with annealing time, which could be due to the growth of W grains, were noted. Furthermore, both the as-deposited and the 24 h annealed W/TaC/SiC samples presented an excellent interfacial bonding with a dense uniform interface. The results indicate that TaC is a promising diffusion barrier in the W/SiC system for high temperature applications.},
doi = {10.1016/j.ceramint.2019.07.255},
journal = {Ceramics International},
number = 17,
volume = 45,
place = {United States},
year = {Thu Jul 25 00:00:00 EDT 2019},
month = {Thu Jul 25 00:00:00 EDT 2019}
}
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https://doi.org/10.1016/j.ceramint.2019.07.255
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