Carrier Dynamics Engineering for High-Performance Electron-Transport-Layer-free Perovskite Photovoltaics

Han, Qiwei; Ding, Jie; Bai, Yusong; Li, Tianyang; Ma, Jing-Yuan; Chen, Yao-Xuan; Zhou, Yihao; Liu, Jie; Ge, Qian-Qing; Chen, Jie; Glass, Jeffrey T.; Therien, Michael J.; Liu, Jie; Mitzi, David B.; Hu, Jin-Song

doi:10.1016/j.chempr.2018.08.004

Title: Carrier Dynamics Engineering for High-Performance Electron-Transport-Layer-free Perovskite Photovoltaics

Journal Article · 23 August 2018 · Chem

DOI: https://doi.org/10.1016/j.chempr.2018.08.004 · OSTI ID:1570067

Han, Qiwei ^[1]; Ding, Jie ^[2]; Bai, Yusong ^[3]; Li, Tianyang ^[3]; Ma, Jing-Yuan ^[2]; Chen, Yao-Xuan ^[2]; Zhou, Yihao ^[3]; Liu, Jie ^[2]; Ge, Qian-Qing ^[2]; Chen, Jie ^[4]; Glass, Jeffrey T. ^[3]; Therien, Michael J. ^[3]; Liu, Jie ^[3]; Mitzi, David B. ^[3];

^[2]

Chinese Academy of Sciences (CAS), Beijing (China). Institute of Chemistry; Duke Univ., Durham, NC (United States)
Chinese Academy of Sciences (CAS), Beijing (China). Institute of Chemistry; University of Chinese Academy of Sciences, Beijing (China)
Duke Univ., Durham, NC (United States)
University of Chinese Academy of Sciences, Beijing (China)

Electron-transport-layer-free (ETL-free) device architectures are promising designs for perovskite photovoltaics because they offer simpler configurations, low cost, and convenience for versatile optoelectronics. However, the development of ETL-free photovoltaics is hindered by their low performance. Here we reveal that a low electron-injection rate at the ETL-free interface is responsible for the performance loss. Moreover, we demonstrate that improving carrier lifetimes in the perovskite films can remedy the poor carrier extraction at interfaces, enabling carrier collection efficiency in ETL-free photovoltaics to approach that in ETL-containing devices. Using perovskite films with microsecond carrier lifetimes, we obtained ETL-free devices with a power conversion efficiency (PCE) of 19.5%, nearly eliminated hysteresis, and good stability. Such a PCE value is comparable to that (20.7%) of the analogous ETL-containing photovoltaics. These results offer opportunities for ETL-free architecture designs in the perovskite photovoltaics family. More importantly, this research provides a general approach to improving the performance of photovoltaics with low-injection-rate interfaces.

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Research Organization:: Duke Univ., Durham, NC (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Chemical Sciences, Geosciences & Biosciences Division (CSGB); National Natural Science Foundation of China (NSFC); Chinese Academy of Sciences (CAS); USDOE

Grant/Contract Number:: SC0001517; 21573249; XDB12020100

OSTI ID:: 1570067

Alternate ID(s):: OSTI ID: 1610562

Journal Information:: Chem, Vol. 4, Issue 10; ISSN 2451-9294

Publisher:: Cell PressCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 46 works

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37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Chemistry
Perovskite solar cells
Carrier lifetime
ETL-free
High performance
Mechanism

Title: Carrier Dynamics Engineering for High-Performance Electron-Transport-Layer-free Perovskite Photovoltaics

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