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Title: Semicoherent oxide heterointerfaces: Structure, properties, and implications

Authors:
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [1]; ORCiD logo [3]
  1. Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
  2. School of Physics and Astronomy, Rochester Institute of Technology, Rochester, New York 14623, USA
  3. Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1570024
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
APL Materials
Additional Journal Information:
Journal Name: APL Materials Journal Volume: 7 Journal Issue: 10; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Uberuaga, Blas Pedro, Dholabhai, Pratik P., Pilania, Ghanshyam, and Chen, Aiping. Semicoherent oxide heterointerfaces: Structure, properties, and implications. United States: N. p., 2019. Web. doi:10.1063/1.5121027.
Uberuaga, Blas Pedro, Dholabhai, Pratik P., Pilania, Ghanshyam, & Chen, Aiping. Semicoherent oxide heterointerfaces: Structure, properties, and implications. United States. doi:10.1063/1.5121027.
Uberuaga, Blas Pedro, Dholabhai, Pratik P., Pilania, Ghanshyam, and Chen, Aiping. Tue . "Semicoherent oxide heterointerfaces: Structure, properties, and implications". United States. doi:10.1063/1.5121027.
@article{osti_1570024,
title = {Semicoherent oxide heterointerfaces: Structure, properties, and implications},
author = {Uberuaga, Blas Pedro and Dholabhai, Pratik P. and Pilania, Ghanshyam and Chen, Aiping},
abstractNote = {},
doi = {10.1063/1.5121027},
journal = {APL Materials},
number = 10,
volume = 7,
place = {United States},
year = {2019},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.5121027

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