A 4×4 electrooptic silicon photonic switch fabric with net neutral insertion loss

doi:10.1109/JLT.2019.2945678

This content will become publicly available on October 5, 2020

Title: A 4×4 electrooptic silicon photonic switch fabric with net neutral insertion loss

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Abstract

We present a strictly nonblocking 4×4 electrooptic silicon photonic switch fabric with on-chip gain. The switch integrates 12 Mach-Zehnder cells in a 3-stage topology equipped with fast electrooptic phase shifters, and thermooptic phase trimmers. To compensate for the losses of the fabric, a 4-channel GaInAsP/InP semiconductor optical amplifier array is flip-chip attached into an etched cavity in the silicon photonic chip with butt-coupled waveguide interfaces. The chip is wirebonded to a CMOS driver that provides push-pull drive to each elementary Mach-Zehnder cell. We demonstrate an optical switch assembly with net neutral insertion loss in the C-band together with nanosecond-scale reconfiguration time.

Authors:

^[1]; Doany, Fuad ^[2]; Budd, Russell A. ^[3]; Schares, Laurent ^[1]; Baks, Christian W. ^[3]; Kuchta, Daniel M. ^[1]; Hirokawa, Takako ^[4];

^[3]

IBM T.J. Watson research center, Yorktown Heights, NY (United States). Optical Networking and Computing Subsystems
IBM T.J. Watson research center, Yorktown Heights, NY (United States). Optical Link and System Design
IBM T.J. Watson research center, Yorktown Heights, NY (United States)
Univ. of California, Santa Barbara, CA (United States). Dept. of Electrical and Computer Engineering

Publication Date:: 2019-10-05

Research Org.:: IBM T.J. Watson research center, Yorktown Heights, NY (United States)

Sponsoring Org.:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:: 1569473

Report Number(s):: DOE-IBM-0844-009
Journal ID: ISSN 0733-8724

Grant/Contract Number:: AR0000844

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Lightwave Technology

Additional Journal Information:: Journal Volume: none; Journal Issue: none; Journal ID: ISSN 0733-8724

Publisher:: IEEE

Country of Publication:: United States

Language:: English

Subject:: 32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION

Citation Formats


                    Dupuis, Nicolas, Doany, Fuad, Budd, Russell A., Schares, Laurent, Baks, Christian W., Kuchta, Daniel M., Hirokawa, Takako, and Lee, Benjamin G. A 4×4 electrooptic silicon photonic switch fabric with net neutral insertion loss.  United States: N. p., 2019. 
        Web.  doi:10.1109/JLT.2019.2945678.

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                    Dupuis, Nicolas, Doany, Fuad, Budd, Russell A., Schares, Laurent, Baks, Christian W., Kuchta, Daniel M., Hirokawa, Takako, & Lee, Benjamin G. A 4×4 electrooptic silicon photonic switch fabric with net neutral insertion loss.  United States.  doi:10.1109/JLT.2019.2945678.

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                    Dupuis, Nicolas, Doany, Fuad, Budd, Russell A., Schares, Laurent, Baks, Christian W., Kuchta, Daniel M., Hirokawa, Takako, and Lee, Benjamin G. Sat .  
        "A 4×4 electrooptic silicon photonic switch fabric with net neutral insertion loss".  United States.  doi:10.1109/JLT.2019.2945678.

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@article{osti_1569473,

  title        = {A 4×4 electrooptic silicon photonic switch fabric with net neutral insertion loss},

  author       = {Dupuis, Nicolas and Doany, Fuad and Budd, Russell A. and Schares, Laurent and Baks, Christian W. and Kuchta, Daniel M. and Hirokawa, Takako and Lee, Benjamin G.},

  abstractNote = {We present a strictly nonblocking 4×4 electrooptic silicon photonic switch fabric with on-chip gain. The switch integrates 12 Mach-Zehnder cells in a 3-stage topology equipped with fast electrooptic phase shifters, and thermooptic phase trimmers. To compensate for the losses of the fabric, a 4-channel GaInAsP/InP semiconductor optical amplifier array is flip-chip attached into an etched cavity in the silicon photonic chip with butt-coupled waveguide interfaces. The chip is wirebonded to a CMOS driver that provides push-pull drive to each elementary Mach-Zehnder cell. We demonstrate an optical switch assembly with net neutral insertion loss in the C-band together with nanosecond-scale reconfiguration time.},

  doi          = {10.1109/JLT.2019.2945678},

  journal      = {Journal of Lightwave Technology},

  number       = none,

  volume       = none,

  place        = {United States},

  year         = {2019},

  month        = {10}

}

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