A 4×4 electrooptic silicon photonic switch fabric with net neutral insertion loss
Abstract
We present a strictly nonblocking 4×4 electrooptic silicon photonic switch fabric with on-chip gain. The switch integrates 12 Mach-Zehnder cells in a 3-stage topology equipped with fast electrooptic phase shifters, and thermooptic phase trimmers. To compensate for the losses of the fabric, a 4-channel GaInAsP/InP semiconductor optical amplifier array is flip-chip attached into an etched cavity in the silicon photonic chip with butt-coupled waveguide interfaces. The chip is wirebonded to a CMOS driver that provides push-pull drive to each elementary Mach-Zehnder cell. We demonstrate an optical switch assembly with net neutral insertion loss in the C-band together with nanosecond-scale reconfiguration time.
- Authors:
-
- IBM T.J. Watson research center, Yorktown Heights, NY (United States). Optical Networking and Computing Subsystems
- IBM T.J. Watson research center, Yorktown Heights, NY (United States). Optical Link and System Design
- IBM T.J. Watson research center, Yorktown Heights, NY (United States)
- Univ. of California, Santa Barbara, CA (United States). Dept. of Electrical and Computer Engineering
- Publication Date:
- Research Org.:
- IBM T.J. Watson research center, Yorktown Heights, NY (United States)
- Sponsoring Org.:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- OSTI Identifier:
- 1569473
- Report Number(s):
- DOE-IBM-0844-009
Journal ID: ISSN 0733-8724
- Grant/Contract Number:
- AR0000844
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Lightwave Technology
- Additional Journal Information:
- Journal Volume: none; Journal Issue: none; Journal ID: ISSN 0733-8724
- Publisher:
- IEEE
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Dupuis, Nicolas, Doany, Fuad, Budd, Russell A., Schares, Laurent, Baks, Christian W., Kuchta, Daniel M., Hirokawa, Takako, and Lee, Benjamin G.. A 4×4 electrooptic silicon photonic switch fabric with net neutral insertion loss. United States: N. p., 2019.
Web. doi:10.1109/JLT.2019.2945678.
Dupuis, Nicolas, Doany, Fuad, Budd, Russell A., Schares, Laurent, Baks, Christian W., Kuchta, Daniel M., Hirokawa, Takako, & Lee, Benjamin G.. A 4×4 electrooptic silicon photonic switch fabric with net neutral insertion loss. United States. https://doi.org/10.1109/JLT.2019.2945678
Dupuis, Nicolas, Doany, Fuad, Budd, Russell A., Schares, Laurent, Baks, Christian W., Kuchta, Daniel M., Hirokawa, Takako, and Lee, Benjamin G.. Sat .
"A 4×4 electrooptic silicon photonic switch fabric with net neutral insertion loss". United States. https://doi.org/10.1109/JLT.2019.2945678. https://www.osti.gov/servlets/purl/1569473.
@article{osti_1569473,
title = {A 4×4 electrooptic silicon photonic switch fabric with net neutral insertion loss},
author = {Dupuis, Nicolas and Doany, Fuad and Budd, Russell A. and Schares, Laurent and Baks, Christian W. and Kuchta, Daniel M. and Hirokawa, Takako and Lee, Benjamin G.},
abstractNote = {We present a strictly nonblocking 4×4 electrooptic silicon photonic switch fabric with on-chip gain. The switch integrates 12 Mach-Zehnder cells in a 3-stage topology equipped with fast electrooptic phase shifters, and thermooptic phase trimmers. To compensate for the losses of the fabric, a 4-channel GaInAsP/InP semiconductor optical amplifier array is flip-chip attached into an etched cavity in the silicon photonic chip with butt-coupled waveguide interfaces. The chip is wirebonded to a CMOS driver that provides push-pull drive to each elementary Mach-Zehnder cell. We demonstrate an optical switch assembly with net neutral insertion loss in the C-band together with nanosecond-scale reconfiguration time.},
doi = {10.1109/JLT.2019.2945678},
journal = {Journal of Lightwave Technology},
number = none,
volume = none,
place = {United States},
year = {2019},
month = {10}
}
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Cited by: 8 works
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