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Title: Raman and electrical transport properties of few-layered arsenic-doped black phosphorus

Abstract

Black phosphorus (b-P) is an allotrope of phosphorus whose properties have attracted great attention.

Authors:
ORCiD logo [1]; ORCiD logo [2];  [3]; ORCiD logo [4];  [2];  [5]; ORCiD logo [5]; ORCiD logo [5]; ORCiD logo [3]; ORCiD logo [2]; ORCiD logo [6]; ORCiD logo [7]; ORCiD logo [2]
  1. Department of Chemistry, Physics and Atmospheric Sciences, Jackson State University, Jackson, USA
  2. National High Magnetic Field Laboratory, Florida State University, Tallahassee, USA, Department of Physics
  3. Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, USA
  4. National High Magnetic Field Laboratory, Florida State University, Tallahassee, USA, Discipline of Physics and Metallurgy Engineering & Materials Science
  5. Center for Nanoscale Materials, Argonne National Laboratory, Argonne, USA
  6. National High Magnetic Field Laboratory, Florida State University, Tallahassee, USA
  7. Department of Chemistry and Biochemistry, University of Bern, CH-3012 Bern, Switzerland, CrystMat Company
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1568937
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Nanoscale
Additional Journal Information:
Journal Name: Nanoscale Journal Volume: 11 Journal Issue: 39; Journal ID: ISSN 2040-3364
Publisher:
Royal Society of Chemistry (RSC)
Country of Publication:
United Kingdom
Language:
English

Citation Formats

Pradhan, Nihar R., Garcia, Carlos, Lucking, Michael C., Pakhira, Srimanta, Martinez, Juan, Rosenmann, Daniel, Divan, Ralu, Sumant, Anirudha V., Terrones, Humberto, Mendoza-Cortes, Jose L., McGill, Stephen A., Zhigadlo, Nikolai D., and Balicas, Luis. Raman and electrical transport properties of few-layered arsenic-doped black phosphorus. United Kingdom: N. p., 2019. Web. doi:10.1039/C9NR04598H.
Pradhan, Nihar R., Garcia, Carlos, Lucking, Michael C., Pakhira, Srimanta, Martinez, Juan, Rosenmann, Daniel, Divan, Ralu, Sumant, Anirudha V., Terrones, Humberto, Mendoza-Cortes, Jose L., McGill, Stephen A., Zhigadlo, Nikolai D., & Balicas, Luis. Raman and electrical transport properties of few-layered arsenic-doped black phosphorus. United Kingdom. doi:10.1039/C9NR04598H.
Pradhan, Nihar R., Garcia, Carlos, Lucking, Michael C., Pakhira, Srimanta, Martinez, Juan, Rosenmann, Daniel, Divan, Ralu, Sumant, Anirudha V., Terrones, Humberto, Mendoza-Cortes, Jose L., McGill, Stephen A., Zhigadlo, Nikolai D., and Balicas, Luis. Thu . "Raman and electrical transport properties of few-layered arsenic-doped black phosphorus". United Kingdom. doi:10.1039/C9NR04598H.
@article{osti_1568937,
title = {Raman and electrical transport properties of few-layered arsenic-doped black phosphorus},
author = {Pradhan, Nihar R. and Garcia, Carlos and Lucking, Michael C. and Pakhira, Srimanta and Martinez, Juan and Rosenmann, Daniel and Divan, Ralu and Sumant, Anirudha V. and Terrones, Humberto and Mendoza-Cortes, Jose L. and McGill, Stephen A. and Zhigadlo, Nikolai D. and Balicas, Luis},
abstractNote = {Black phosphorus (b-P) is an allotrope of phosphorus whose properties have attracted great attention.},
doi = {10.1039/C9NR04598H},
journal = {Nanoscale},
number = 39,
volume = 11,
place = {United Kingdom},
year = {2019},
month = {10}
}

Journal Article:
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This content will become publicly available on September 26, 2020
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Works referenced in this record:

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