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Title: A Survey of Transparent Conducting Films and Optoelectrical Materials for High Optical Power Applications

Abstract

The lifetime laser damage performance of a wide range of transparent conductive materials is assessed, including ultrathin metal films, doped metal oxides, doped compound semiconductors, and graphene whose carrier densities span five orders of magnitude from 1018 to 1023cm-3. Lifetime laser damage thresholds are determined by exposing material surfaces to repeated nanosecond laser pulses at near IR wavelengths (1064 nm). Near threshold fluences, two distinct damage modes, i.e., bulk and discrete, emerge depending on carrier density. These bulk and discrete damage modes are attributed to free carrier-induced bulk and localized, defect-driven absorption processes, respectively. For polycrystalline films with free carrier densities greater than ≈1020 cm-3, laser damage thresholds are less than 5 J cm-2. In contrast, bulk absorption is not apparent at thresholds substantially higher than ≈10 J cm-2 in single-crystal films with free carrier concentrations lower than ≈1019cm-3. By increasing thickness, films with lower carrier densities can deliver relevant levels of sheet conductance (<200 Ω sq-1) while remaining transparent. These lifetime laser damage threshold measurements offer systematic criteria to select materials aimed at handling high optical powers in optoelectronics devices and emerging plasmonic and metamaterials for lasers.

Authors:
ORCiD logo [1];  [1];  [1];  [1]; ORCiD logo [1]
  1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States). Physical and Life Sciences Directorate
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1567993
Alternate Identifier(s):
OSTI ID: 1560759
Report Number(s):
LLNL-JRNL-741079
Journal ID: ISSN 1862-6300; 894755
Grant/Contract Number:  
AC52-07NA27344; 15-ERD-057
Resource Type:
Accepted Manuscript
Journal Name:
Physica Status Solidi. A, Applications and Materials Science
Additional Journal Information:
Journal Volume: na; Journal Issue: na; Journal ID: ISSN 1862-6300
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Yoo, Jae-Hyuck, Lange, Andrew, Chesser, John, Falabella, Steve, and Elhadj, Selim. A Survey of Transparent Conducting Films and Optoelectrical Materials for High Optical Power Applications. United States: N. p., 2019. Web. doi:10.1002/pssa.201900459.
Yoo, Jae-Hyuck, Lange, Andrew, Chesser, John, Falabella, Steve, & Elhadj, Selim. A Survey of Transparent Conducting Films and Optoelectrical Materials for High Optical Power Applications. United States. doi:10.1002/pssa.201900459.
Yoo, Jae-Hyuck, Lange, Andrew, Chesser, John, Falabella, Steve, and Elhadj, Selim. Mon . "A Survey of Transparent Conducting Films and Optoelectrical Materials for High Optical Power Applications". United States. doi:10.1002/pssa.201900459. https://www.osti.gov/servlets/purl/1567993.
@article{osti_1567993,
title = {A Survey of Transparent Conducting Films and Optoelectrical Materials for High Optical Power Applications},
author = {Yoo, Jae-Hyuck and Lange, Andrew and Chesser, John and Falabella, Steve and Elhadj, Selim},
abstractNote = {The lifetime laser damage performance of a wide range of transparent conductive materials is assessed, including ultrathin metal films, doped metal oxides, doped compound semiconductors, and graphene whose carrier densities span five orders of magnitude from 1018 to 1023cm-3. Lifetime laser damage thresholds are determined by exposing material surfaces to repeated nanosecond laser pulses at near IR wavelengths (1064 nm). Near threshold fluences, two distinct damage modes, i.e., bulk and discrete, emerge depending on carrier density. These bulk and discrete damage modes are attributed to free carrier-induced bulk and localized, defect-driven absorption processes, respectively. For polycrystalline films with free carrier densities greater than ≈1020 cm-3, laser damage thresholds are less than 5 J cm-2. In contrast, bulk absorption is not apparent at thresholds substantially higher than ≈10 J cm-2 in single-crystal films with free carrier concentrations lower than ≈1019cm-3. By increasing thickness, films with lower carrier densities can deliver relevant levels of sheet conductance (<200 Ω sq-1) while remaining transparent. These lifetime laser damage threshold measurements offer systematic criteria to select materials aimed at handling high optical powers in optoelectronics devices and emerging plasmonic and metamaterials for lasers.},
doi = {10.1002/pssa.201900459},
journal = {Physica Status Solidi. A, Applications and Materials Science},
number = na,
volume = na,
place = {United States},
year = {2019},
month = {9}
}

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Works referenced in this record:

Dual-Gated Active Metasurface at 1550 nm with Wide (>300°) Phase Tunability
journal, March 2018


Diode-based additive manufacturing of metals using an optically-addressable light valve
journal, January 2017

  • Matthews, Manyalibo J.; Guss, Gabe; Drachenberg, Derrek R.
  • Optics Express, Vol. 25, Issue 10
  • DOI: 10.1364/OE.25.011788

Electric Properties of Zinc Oxide Epitaxial Films Grown by Ion-Beam Sputtering with Oxygen-Radical Irradiation
journal, June 1999

  • Tsurumi, Takaaki; Nishizawa, Shuichi; Ohashi, Naoki
  • Japanese Journal of Applied Physics, Vol. 38, Issue Part 1, No. 6A
  • DOI: 10.1143/JJAP.38.3682

High Mobility Exceeding 80 cm 2 V -1 s -1 in Polycrystalline Ta-Doped SnO 2 Thin Films on Glass Using Anatase TiO 2 Seed Layers
journal, February 2010

  • Nakao, Shoichiro; Yamada, Naoomi; Hitosugi, Taro
  • Applied Physics Express, Vol. 3, Issue 3
  • DOI: 10.1143/APEX.3.031102

Refractory Plasmonics
journal, April 2014


Ultrashort-laser-pulse damage threshold of transparent materials and the role of incubation
journal, December 1999

  • Rosenfeld, A.; Lorenz, M.; Stoian, R.
  • Applied Physics A: Materials Science & Processing, Vol. 69, Issue 7
  • DOI: 10.1007/s003390051419

Searching for better plasmonic materials
journal, March 2010


Nanostructured Plasmonic Sensors
journal, February 2008

  • Stewart, Matthew E.; Anderton, Christopher R.; Thompson, Lucas B.
  • Chemical Reviews, Vol. 108, Issue 2
  • DOI: 10.1021/cr068126n

Optical damage performance of conductive widegap semiconductors: spatial, temporal, and lifetime modeling
journal, December 2016

  • Elhadj, Selim; Yoo, Jae-hyuck; Negres, Raluca A.
  • Optical Materials Express, Vol. 7, Issue 1
  • DOI: 10.1364/OME.7.000202

Investigation of nanoprecursors threshold distribution in laser-damage testing
journal, December 2005


New figure of merit for transparent conductors
journal, September 1976


Heteroepitaxy of N-type β-Ga 2 O 3 thin films on sapphire substrate by low pressure chemical vapor deposition
journal, September 2016

  • Rafique, Subrina; Han, Lu; Neal, Adam T.
  • Applied Physics Letters, Vol. 109, Issue 13
  • DOI: 10.1063/1.4963820

Reactively sputtered oxide optical coatings for inertial confinement fusion laser components
journal, November 1979


Laser damage mechanisms in conductive widegap semiconductor films
journal, January 2016

  • Yoo, Jae-Hyuck; Menor, Marlon G.; Adams, John J.
  • Optics Express, Vol. 24, Issue 16
  • DOI: 10.1364/OE.24.017616

Origin of High Mobility in Molybdenum-Doped Indium Oxide
journal, April 2015

  • Bhachu, Davinder S.; Scanlon, David O.; Sankar, Gopinathan
  • Chemistry of Materials, Vol. 27, Issue 8
  • DOI: 10.1021/cm503896h

Role of electron-phonon coupling in finite-temperature dielectric functions of Au, Ag, and Cu
journal, September 2017


Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]
journal, July 2001

  • Roschke, M.; Schwierz, F.
  • IEEE Transactions on Electron Devices, Vol. 48, Issue 7
  • DOI: 10.1109/16.930664

Structural studies of the codeposited i -layer of ZnPc:C60p -i -n solar cells
journal, November 2010

  • Iketaki, Kai; Kaji, Toshihiko; Nakao, Satoru
  • physica status solidi (c), Vol. 8, Issue 2
  • DOI: 10.1002/pssc.201000462

Optical spectroscopy of graphene: From the far infrared to the ultraviolet
journal, August 2012


High figure-of-merit ultrathin metal transparent electrodes incorporating a conductive grid
journal, January 2010

  • Ghosh, D. S.; Chen, T. L.; Pruneri, V.
  • Applied Physics Letters, Vol. 96, Issue 4
  • DOI: 10.1063/1.3299259

Continuum generation from single gold nanostructures through near-field mediated intraband transitions
journal, September 2003

  • Beversluis, Michael R.; Bouhelier, Alexandre; Novotny, Lukas
  • Physical Review B, Vol. 68, Issue 11
  • DOI: 10.1103/PhysRevB.68.115433

Statistical analysis of defect-caused laser damage in thin films
journal, January 1977

  • Picard, R. H.; Milam, D.; Bradbury, R. A.
  • Applied Optics, Vol. 16, Issue 6
  • DOI: 10.1364/AO.16.001563

Optical and electrical properties of indium tin oxide films near their laser damage threshold
journal, January 2017

  • Yoo, Jae-Hyuck; Lange, Andrew; Bude, Jeff
  • Optical Materials Express, Vol. 7, Issue 3
  • DOI: 10.1364/OME.7.000817

High mobility transparent conducting oxides for thin film solar cells
journal, January 2010


Thermally ruggedized ITO transparent electrode films for high power optoelectronics
journal, January 2017

  • Yoo, Jae-Hyuck; Matthews, Manyalibo; Ramsey, Phil
  • Optics Express, Vol. 25, Issue 21
  • DOI: 10.1364/OE.25.025533

Ellipsometry investigation of the effects of annealing temperature on the optical properties of indium tin oxide thin films studied by Drude–Lorentz model
journal, May 2009


Unity-Order Index Change in Transparent Conducting Oxides at Visible Frequencies
journal, June 2010

  • Feigenbaum, Eyal; Diest, Kenneth; Atwater, Harry A.
  • Nano Letters, Vol. 10, Issue 6, p. 2111-2116
  • DOI: 10.1021/nl1006307

Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition
journal, June 2000

  • Romano, L. T.; Van de Walle, C. G.; Ager, J. W.
  • Journal of Applied Physics, Vol. 87, Issue 11
  • DOI: 10.1063/1.373529

Assessment of mono-shot measurement as a fast and accurate determination of the laser-induced damage threshold in the sub-picosecond regime
journal, January 2016

  • Sozet, Martin; Neauport, Jérôme; Lavastre, Eric
  • Optics Letters, Vol. 41, Issue 4
  • DOI: 10.1364/OL.41.000804

    Works referencing / citing this record:

    Gallium Oxide for High‐Power Optical Applications
    journal, January 2020

    • Deng, Huiyang; Leedle, Kenneth J.; Miao, Yu
    • Advanced Optical Materials, Vol. 8, Issue 7
    • DOI: 10.1002/adom.201901522