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Title: Engineering the gain-bandwidth product of phototransistor diodes

Abstract

In recent years, phototransistors have considerably expanded their field of application, including for instance heterodyne detection and optical interconnects. Unlike in low-light imaging, some of these applications require fast photodetectors that can operate in relatively high light levels. Since the gain and bandwidth of phototransistors are not constant across different optical powers, the devices that have been optimized for operation in low light level cannot effectively be employed in different technological applications. We present an extensive study of the gain and bandwidth of short-wavelength infrared phototransistors as a function of optical power level for three device architectures that we designed and fabricated. The gain of the photodetectors is found to increase with increasing carrier injection. Based on a Shockley-Read-Hall recombination model, we show that this is due to the saturation of recombination centers in the phototransistor base layer. Eventually, at a higher light level, the gain drops, due to the Kirk effect. As a result of these opposing mechanisms, the gain-bandwidth product is peaked at a given power level, which depends on the device design and material parameters, such as doping and defect density. Guided by this physical understanding, we design and demonstrate a phototransistor which is capable of reachingmore » a high gain-bandwidth product for high-speed applications. The proposed design criteria can be employed in conjunction with the engineering of the device size to achieve a wide tunability of the gain and bandwidth, hence paving the way toward fast photodetectors for applications with different light levels.« less

Authors:
ORCiD logo; ; ORCiD logo; ; ORCiD logo;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1567961
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 115 Journal Issue: 5; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Bianconi, Simone, Rezaei, Mohsen, Park, Min-Su, Huang, Wenyuan, Tan, Chee Leong, and Mohseni, Hooman. Engineering the gain-bandwidth product of phototransistor diodes. United States: N. p., 2019. Web. doi:10.1063/1.5095815.
Bianconi, Simone, Rezaei, Mohsen, Park, Min-Su, Huang, Wenyuan, Tan, Chee Leong, & Mohseni, Hooman. Engineering the gain-bandwidth product of phototransistor diodes. United States. https://doi.org/10.1063/1.5095815
Bianconi, Simone, Rezaei, Mohsen, Park, Min-Su, Huang, Wenyuan, Tan, Chee Leong, and Mohseni, Hooman. Tue . "Engineering the gain-bandwidth product of phototransistor diodes". United States. https://doi.org/10.1063/1.5095815.
@article{osti_1567961,
title = {Engineering the gain-bandwidth product of phototransistor diodes},
author = {Bianconi, Simone and Rezaei, Mohsen and Park, Min-Su and Huang, Wenyuan and Tan, Chee Leong and Mohseni, Hooman},
abstractNote = {In recent years, phototransistors have considerably expanded their field of application, including for instance heterodyne detection and optical interconnects. Unlike in low-light imaging, some of these applications require fast photodetectors that can operate in relatively high light levels. Since the gain and bandwidth of phototransistors are not constant across different optical powers, the devices that have been optimized for operation in low light level cannot effectively be employed in different technological applications. We present an extensive study of the gain and bandwidth of short-wavelength infrared phototransistors as a function of optical power level for three device architectures that we designed and fabricated. The gain of the photodetectors is found to increase with increasing carrier injection. Based on a Shockley-Read-Hall recombination model, we show that this is due to the saturation of recombination centers in the phototransistor base layer. Eventually, at a higher light level, the gain drops, due to the Kirk effect. As a result of these opposing mechanisms, the gain-bandwidth product is peaked at a given power level, which depends on the device design and material parameters, such as doping and defect density. Guided by this physical understanding, we design and demonstrate a phototransistor which is capable of reaching a high gain-bandwidth product for high-speed applications. The proposed design criteria can be employed in conjunction with the engineering of the device size to achieve a wide tunability of the gain and bandwidth, hence paving the way toward fast photodetectors for applications with different light levels.},
doi = {10.1063/1.5095815},
journal = {Applied Physics Letters},
number = 5,
volume = 115,
place = {United States},
year = {2019},
month = {7}
}

Journal Article:
Free Publicly Available Full Text
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https://doi.org/10.1063/1.5095815

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Cited by: 8 works
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