Engineering the gain-bandwidth product of phototransistor diodes
- Authors:
-
[1];
[2];
[3];
- Bio-Inspired Sensors and Optoelectronics Laboratory, Northwestern University, 2145 Sheridan Rd, Evanston, Illinois 60208, USA
- Bio-Inspired Sensors and Optoelectronics Laboratory, Northwestern University, 2145 Sheridan Rd, Evanston, Illinois 60208, USA, Nano Convergence Research Center, Korea Electronics Technology Institute (KETI), 111, Ballyong-ro, Deokjin-gu, Jeonju-si, Jeollabuk-do 54853, South Korea
- Bio-Inspired Sensors and Optoelectronics Laboratory, Northwestern University, 2145 Sheridan Rd, Evanston, Illinois 60208, USA, Photonics Research Center, University of Malaya, 50603 Kuala Lumpur, Malaysia
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1567961
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Name: Applied Physics Letters Journal Volume: 115 Journal Issue: 5; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Bianconi, Simone, Rezaei, Mohsen, Park, Min-Su, Huang, Wenyuan, Tan, Chee Leong, and Mohseni, Hooman. Engineering the gain-bandwidth product of phototransistor diodes. United States: N. p., 2019.
Web. doi:10.1063/1.5095815.
Bianconi, Simone, Rezaei, Mohsen, Park, Min-Su, Huang, Wenyuan, Tan, Chee Leong, & Mohseni, Hooman. Engineering the gain-bandwidth product of phototransistor diodes. United States. https://doi.org/10.1063/1.5095815
Bianconi, Simone, Rezaei, Mohsen, Park, Min-Su, Huang, Wenyuan, Tan, Chee Leong, and Mohseni, Hooman. Mon .
"Engineering the gain-bandwidth product of phototransistor diodes". United States. https://doi.org/10.1063/1.5095815.
@article{osti_1567961,
title = {Engineering the gain-bandwidth product of phototransistor diodes},
author = {Bianconi, Simone and Rezaei, Mohsen and Park, Min-Su and Huang, Wenyuan and Tan, Chee Leong and Mohseni, Hooman},
abstractNote = {},
doi = {10.1063/1.5095815},
journal = {Applied Physics Letters},
number = 5,
volume = 115,
place = {United States},
year = {2019},
month = {7}
}
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https://doi.org/10.1063/1.5095815
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Works referenced in this record:
ZnO homojunction photodiodes based on Sb-doped p-type nanowire array and n-type film for ultraviolet detection
journal, January 2011
- Wang, Guoping; Chu, Sheng; Zhan, Ning
- Applied Physics Letters, Vol. 98, Issue 4
Photovoltage field-effect transistors
journal, February 2017
- Adinolfi, Valerio; Sargent, Edward H.
- Nature, Vol. 542, Issue 7641
Sensitivity Limit of Nanoscale Phototransistors
journal, August 2017
- Rezaei, Mohsen; Park, Min-Su; Tan, Chee Leong
- IEEE Electron Device Letters, Vol. 38, Issue 8
Demonstration of an optical chip-to-chip link in a 3D integrated electronic-photonic platform
conference, September 2015
- Settaluri, Krishna T.; Lin, Sen; Moazeni, Sajjad
- ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC)
Single-photon detectors for optical quantum information applications
journal, December 2009
- Hadfield, Robert H.
- Nature Photonics, Vol. 3, Issue 12
Room-temperature self-powered energy photodetector based on optically induced Seebeck effect in Cd 3 As 2
journal, April 2017
- Yavarishad, Niloufar; Hosseini, Tahereh; Kheirandish, Elaheh
- Applied Physics Express, Vol. 10, Issue 5
Analytical and numerical evaluation of electron-injection detector optimized for SWIR photon detection
journal, February 2017
- Movassaghi, Yashar; Fathipour, Vala; Fathipour, Morteza
- Journal of Applied Physics, Vol. 121, Issue 8
Analytical modeling and numerical simulation of the short-wave infrared electron-injection detectors
journal, March 2016
- Movassaghi, Yashar; Fathipour, Vala; Fathipour, Morteza
- Applied Physics Letters, Vol. 108, Issue 12
The effect of doping density and injection level on minority-carrier lifetime as applied to bifacial dendritic web silicon solar cells
journal, January 1988
- Meier, D. L.; Hwang, J. -M.; Campbell, R. B.
- IEEE Transactions on Electron Devices, Vol. 35, Issue 1
Ultrahigh Responsivity Visible and Infrared Detection Using Silicon Nanowire Phototransistors
journal, June 2010
- Zhang, Arthur; Kim, Hongkwon; Cheng, James
- Nano Letters, Vol. 10, Issue 6
Supersensitive, Fast-Response Nanowire Sensors by Using Schottky Contacts
journal, May 2010
- Hu, Youfan; Zhou, Jun; Yeh, Ping-Hung
- Advanced Materials, Vol. 22, Issue 30
Low-threshold-switch phototransistor based on Kirk effect and float-zone silicon
journal, March 2007
- Zhou, D. B.; Han, D. J.; Sun, C. M.
- Applied Physics Letters, Vol. 90, Issue 11
Realization of unbiased photoresponse in amorphous InGaZnO ultraviolet detector via a hole-trapping process
journal, April 2015
- Jiang, D. L.; Li, L.; Chen, H. Y.
- Applied Physics Letters, Vol. 106, Issue 17
Generation-recombination and trap-assisted tunneling in long wavelength infrared minority electron unipolar photodetectors based on InAs/GaSb superlattice
journal, February 2014
- Callewaert, F.; Hoang, A. M.; Razeghi, M.
- Applied Physics Letters, Vol. 104, Issue 5
A Short-Wave Infrared Nanoinjection Imager With 2500 A/W Responsivity and Low Excess Noise
journal, October 2010
- Memis, O. G.; Kohoutek, J.
- IEEE Photonics Journal, Vol. 2, Issue 5
Demonstration of Shot-noise-limited Swept Source OCT Without Balanced Detection
journal, April 2017
- Fathipour, Vala; Schmoll, Tilman; Bonakdar, Alireza
- Scientific Reports, Vol. 7, Issue 1
Demonstration of enhanced performance of an InP/InGaAs heterojunction phototransistor with a base terminal
journal, October 1991
- Chandrasekhar, S.; Hoppe, M. K.; Dentai, A. G.
- IEEE Electron Device Letters, Vol. 12, Issue 10
Organic Light Detectors: Photodiodes and Phototransistors
journal, March 2013
- Baeg, Kang-Jun; Binda, Maddalena; Natali, Dario
- Advanced Materials, Vol. 25, Issue 31
Graphene bilayer field-effect phototransistor for terahertz and infrared detection
journal, June 2009
- Ryzhii, V.; Ryzhii, M.
- Physical Review B, Vol. 79, Issue 24
Modeling of type-II InAs/GaSb superlattices using an empirical tight-binding method and interface engineering
journal, February 2004
- Wei, Yajun; Razeghi, Manijeh
- Physical Review B, Vol. 69, Issue 8
Diameter-Dependent Internal Gain in Ohmic Ge Nanowire Photodetectors
journal, June 2010
- Kim, Cheol-Joo; Lee, Hyun-Seung; Cho, Yong-Jun
- Nano Letters, Vol. 10, Issue 6
Deep levels caused by misfit dislocations in GaAsSb/GaAs heterostructures
journal, August 1995
- Wosiński, T.; Ma̧kosa, A.; Figielski, T.
- Applied Physics Letters, Vol. 67, Issue 8
Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon
journal, September 2016
- Ko, Wai Son; Bhattacharya, Indrasen; Tran, Thai-Truong D.
- Scientific Reports, Vol. 6, Issue 1
Sensitivity of resonant tunneling diode photodetectors
journal, July 2016
- Pfenning, Andreas; Hartmann, Fabian; Langer, Fabian
- Nanotechnology, Vol. 27, Issue 35
Surface passivation and aging of InGaAs/InP heterojunction phototransistors
journal, June 2017
- Park, Min-Su; Razaei, Mohsen; Barnhart, Katie
- Journal of Applied Physics, Vol. 121, Issue 23
Analytical Modeling of Speed Response of Heterojunction Bipolar Phototransistors
journal, May 2007
- Helme, John P.; Houston, Peter A.
- Journal of Lightwave Technology, Vol. 25, Issue 5
Characterization and modeling of a ZnO nanowire ultraviolet photodetector with graphene transparent contact
journal, December 2013
- Zhang, H.; Babichev, A. V.; Jacopin, G.
- Journal of Applied Physics, Vol. 114, Issue 23
On the Sensitivity of Electron-Injection Detectors at Low Light Level
journal, June 2016
- Fathipour, Vala; Nia, Iman Hassani; Bonakdar, Alireza
- IEEE Photonics Journal, Vol. 8, Issue 3
Impact of three-dimensional geometry on the performance of isolated electron-injection infrared detectors
journal, January 2015
- Fathipour, Vala; Jang, Sung Jun; Nia, Iman Hassani
- Applied Physics Letters, Vol. 106, Issue 2
Low-Voltage and High-Responsivity Germanium Bipolar Phototransistor for Optical Detections in the Near-Infrared Regime
journal, October 2008
- Kah-Wee Ang,
- IEEE Electron Device Letters, Vol. 29, Issue 10
Heterojunction phototransistor for highly sensitive infrared detection
conference, May 2017
- Rezaei, Mohsen; Park, Min-Su; Tan, Chee Leong
- SPIE Defense + Security, SPIE Proceedings