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Title: Carrier dynamics of intermediate sub-bandgap transitions in ZnTeO

Authors:
 [1];  [2];  [3]; ORCiD logo [2]; ORCiD logo [1]
  1. Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109, USA
  2. Department of Physics, University of Michigan, 450 Church St., Ann Arbor, Michigan 48109, USA
  3. Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1567926
Grant/Contract Number:  
SC0000957; AC02-06CH11357
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 126 Journal Issue: 13; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Chen, Chihyu, Stoica, Vladimir A., Schaller, Richard D., Clarke, Roy, and Phillips, Jamie D. Carrier dynamics of intermediate sub-bandgap transitions in ZnTeO. United States: N. p., 2019. Web. doi:10.1063/1.5111927.
Chen, Chihyu, Stoica, Vladimir A., Schaller, Richard D., Clarke, Roy, & Phillips, Jamie D. Carrier dynamics of intermediate sub-bandgap transitions in ZnTeO. United States. doi:10.1063/1.5111927.
Chen, Chihyu, Stoica, Vladimir A., Schaller, Richard D., Clarke, Roy, and Phillips, Jamie D. Mon . "Carrier dynamics of intermediate sub-bandgap transitions in ZnTeO". United States. doi:10.1063/1.5111927.
@article{osti_1567926,
title = {Carrier dynamics of intermediate sub-bandgap transitions in ZnTeO},
author = {Chen, Chihyu and Stoica, Vladimir A. and Schaller, Richard D. and Clarke, Roy and Phillips, Jamie D.},
abstractNote = {},
doi = {10.1063/1.5111927},
journal = {Journal of Applied Physics},
number = 13,
volume = 126,
place = {United States},
year = {2019},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on October 1, 2020
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