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Title: Quantum‐Hall to Insulator Transition in Ultra‐Low‐Carrier‐Density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level

Abstract

A key feature of the topological surface state under a magnetic field is the presence of the zeroth Landau level at the zero energy. Nonetheless, it is challenging to probe the zeroth Landau level due to large electron–hole puddles smearing its energy landscape. Furthermore, by developing ultra–low–carrier density topological insulator Sb 2Te 3 films, an extreme quantum limit of the topological surface state is reached and a hidden phase at the zeroth Landau level is uncovered. First, an unexpected quantum–Hall–to–insulator–transition near the zeroth Landau level is discovered. Then, through a detailed scaling analysis, it is found that this quantum–Hall–to–insulator–transition belongs to a new universality class, implying that the insulating phase discovered here has a fundamentally different origin from those in nontopological systems.

Authors:
ORCiD logo [1]; ORCiD logo [2];  [3]; ORCiD logo [4]; ORCiD logo [1];  [1];  [1]; ORCiD logo [5]; ORCiD logo [1]
  1. Rutgers, The State Univ. of New Jersey, Piscataway, NJ (United States)
  2. Univ. of Chicago, Chicago, IL (United States)
  3. Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
  4. Brookhaven National Lab. (BNL), Upton, NY (United States)
  5. SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1566877
Alternate Identifier(s):
OSTI ID: 1530473
Report Number(s):
BNL-212137-2019-JAAM
Journal ID: ISSN 0935-9648
Grant/Contract Number:  
SC0012704; AC02−98CH10886; AC02‐76SF00515
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Volume: 31; Journal Issue: 36; Journal ID: ISSN 0935-9648
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; quantum Hall effect; quantum Hall to insulator transition; scaling analysis; topological insulator thin‐films; zeroth Landau level

Citation Formats

Salehi, Maryam, Shapourian, Hassan, Rosen, Ilan Thomas, Han, Myung‐Geun, Moon, Jisoo, Shibayev, Pavel, Jain, Deepti, Goldhaber‐Gordon, David, and Oh, Seongshik. Quantum‐Hall to Insulator Transition in Ultra‐Low‐Carrier‐Density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level. United States: N. p., 2019. Web. doi:10.1002/adma.201901091.
Salehi, Maryam, Shapourian, Hassan, Rosen, Ilan Thomas, Han, Myung‐Geun, Moon, Jisoo, Shibayev, Pavel, Jain, Deepti, Goldhaber‐Gordon, David, & Oh, Seongshik. Quantum‐Hall to Insulator Transition in Ultra‐Low‐Carrier‐Density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level. United States. doi:10.1002/adma.201901091.
Salehi, Maryam, Shapourian, Hassan, Rosen, Ilan Thomas, Han, Myung‐Geun, Moon, Jisoo, Shibayev, Pavel, Jain, Deepti, Goldhaber‐Gordon, David, and Oh, Seongshik. Mon . "Quantum‐Hall to Insulator Transition in Ultra‐Low‐Carrier‐Density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level". United States. doi:10.1002/adma.201901091.
@article{osti_1566877,
title = {Quantum‐Hall to Insulator Transition in Ultra‐Low‐Carrier‐Density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level},
author = {Salehi, Maryam and Shapourian, Hassan and Rosen, Ilan Thomas and Han, Myung‐Geun and Moon, Jisoo and Shibayev, Pavel and Jain, Deepti and Goldhaber‐Gordon, David and Oh, Seongshik},
abstractNote = {A key feature of the topological surface state under a magnetic field is the presence of the zeroth Landau level at the zero energy. Nonetheless, it is challenging to probe the zeroth Landau level due to large electron–hole puddles smearing its energy landscape. Furthermore, by developing ultra–low–carrier density topological insulator Sb2Te3 films, an extreme quantum limit of the topological surface state is reached and a hidden phase at the zeroth Landau level is uncovered. First, an unexpected quantum–Hall–to–insulator–transition near the zeroth Landau level is discovered. Then, through a detailed scaling analysis, it is found that this quantum–Hall–to–insulator–transition belongs to a new universality class, implying that the insulating phase discovered here has a fundamentally different origin from those in nontopological systems.},
doi = {10.1002/adma.201901091},
journal = {Advanced Materials},
number = 36,
volume = 31,
place = {United States},
year = {2019},
month = {7}
}

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Works referenced in this record:

Colloquium: Topological insulators
journal, November 2010


Topological Insulator Materials
journal, October 2013

  • Ando, Yoichi
  • Journal of the Physical Society of Japan, Vol. 82, Issue 10, Article No. 102001
  • DOI: 10.7566/JPSJ.82.102001