Quantum-Hall to Insulator Transition in Ultra-Low-Carrier-Density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level
- Rutgers, The State Univ. of New Jersey, Piscataway, NJ (United States)
- Univ. of Chicago, Chicago, IL (United States)
- Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States)
A key feature of the topological surface state under a magnetic field is the presence of the zeroth Landau level at the zero energy. Nonetheless, it is challenging to probe the zeroth Landau level due to large electron-hole puddles smearing its energy landscape. Furthermore, by developing ultra-low-carrier density topological insulator Sb2Te3 films, an extreme quantum limit of the topological surface state is reached and a hidden phase at the zeroth Landau level is uncovered. First, an unexpected quantum-Hall-to-insulator-transition near the zeroth Landau level is discovered. Then, through a detailed scaling analysis, it is found that this quantum-Hall-to-insulator-transition belongs to a new universality class, implying that the insulating phase discovered here has a fundamentally different origin from those in nontopological systems.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE
- Grant/Contract Number:
- SC0012704; AC02−98CH10886; AC02‐76SF00515
- OSTI ID:
- 1566877
- Alternate ID(s):
- OSTI ID: 1530473
- Report Number(s):
- BNL-212137-2019-JAAM
- Journal Information:
- Advanced Materials, Vol. 31, Issue 36; ISSN 0935-9648
- Publisher:
- WileyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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