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Title: Quantum-Hall to Insulator Transition in Ultra-Low-Carrier-Density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level

Abstract

A key feature of the topological surface state under a magnetic field is the presence of the zeroth Landau level at the zero energy. Nonetheless, it is challenging to probe the zeroth Landau level due to large electron-hole puddles smearing its energy landscape. Furthermore, by developing ultra-low-carrier density topological insulator Sb 2Te 3 films, an extreme quantum limit of the topological surface state is reached and a hidden phase at the zeroth Landau level is uncovered. First, an unexpected quantum-Hall-to-insulator-transition near the zeroth Landau level is discovered. Then, through a detailed scaling analysis, it is found that this quantum-Hall-to-insulator-transition belongs to a new universality class, implying that the insulating phase discovered here has a fundamentally different origin from those in nontopological systems.

Authors:
ORCiD logo [1]; ORCiD logo [2];  [3]; ORCiD logo [4]; ORCiD logo [1];  [1];  [1]; ORCiD logo [5]; ORCiD logo [1]
  1. Rutgers, The State Univ. of New Jersey, Piscataway, NJ (United States)
  2. Univ. of Chicago, Chicago, IL (United States)
  3. Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
  4. Brookhaven National Lab. (BNL), Upton, NY (United States)
  5. SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1566877
Alternate Identifier(s):
OSTI ID: 1530473
Report Number(s):
BNL-212137-2019-JAAM
Journal ID: ISSN 0935-9648
Grant/Contract Number:  
SC0012704; AC02−98CH10886; AC02‐76SF00515
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Volume: 31; Journal Issue: 36; Journal ID: ISSN 0935-9648
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; quantum Hall effect; quantum Hall to insulator transition; scaling analysis; topological insulator thin‐films; zeroth Landau level

Citation Formats

Salehi, Maryam, Shapourian, Hassan, Rosen, Ilan Thomas, Han, Myung‐Geun, Moon, Jisoo, Shibayev, Pavel, Jain, Deepti, Goldhaber‐Gordon, David, and Oh, Seongshik. Quantum-Hall to Insulator Transition in Ultra-Low-Carrier-Density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level. United States: N. p., 2019. Web. doi:10.1002/adma.201901091.
Salehi, Maryam, Shapourian, Hassan, Rosen, Ilan Thomas, Han, Myung‐Geun, Moon, Jisoo, Shibayev, Pavel, Jain, Deepti, Goldhaber‐Gordon, David, & Oh, Seongshik. Quantum-Hall to Insulator Transition in Ultra-Low-Carrier-Density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level. United States. doi:10.1002/adma.201901091.
Salehi, Maryam, Shapourian, Hassan, Rosen, Ilan Thomas, Han, Myung‐Geun, Moon, Jisoo, Shibayev, Pavel, Jain, Deepti, Goldhaber‐Gordon, David, and Oh, Seongshik. Mon . "Quantum-Hall to Insulator Transition in Ultra-Low-Carrier-Density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level". United States. doi:10.1002/adma.201901091.
@article{osti_1566877,
title = {Quantum-Hall to Insulator Transition in Ultra-Low-Carrier-Density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level},
author = {Salehi, Maryam and Shapourian, Hassan and Rosen, Ilan Thomas and Han, Myung‐Geun and Moon, Jisoo and Shibayev, Pavel and Jain, Deepti and Goldhaber‐Gordon, David and Oh, Seongshik},
abstractNote = {A key feature of the topological surface state under a magnetic field is the presence of the zeroth Landau level at the zero energy. Nonetheless, it is challenging to probe the zeroth Landau level due to large electron-hole puddles smearing its energy landscape. Furthermore, by developing ultra-low-carrier density topological insulator Sb2Te3 films, an extreme quantum limit of the topological surface state is reached and a hidden phase at the zeroth Landau level is uncovered. First, an unexpected quantum-Hall-to-insulator-transition near the zeroth Landau level is discovered. Then, through a detailed scaling analysis, it is found that this quantum-Hall-to-insulator-transition belongs to a new universality class, implying that the insulating phase discovered here has a fundamentally different origin from those in nontopological systems.},
doi = {10.1002/adma.201901091},
journal = {Advanced Materials},
number = 36,
volume = 31,
place = {United States},
year = {2019},
month = {7}
}

Journal Article:
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    • Nature Communications, Vol. 2, Issue 1
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