Strain and Electronic Nematicity in La2-xSrxCuO4

Bollinger, Anthony T.; Wu, Zebin; He, Xi; Drozdov, Ilya; Wu, Jie; Robinson, Ian; Bozovic, Ivan

doi:10.1007/s10948-019-05327-x

Title: Strain and Electronic Nematicity in La_2-xSr_xCuO₄

Journal Article · 30 September 2019 · Journal of Superconductivity and Novel Magnetism

DOI: https://doi.org/10.1007/s10948-019-05327-x · OSTI ID:1566876

^[1]; Wu, Zebin ^[1]; He, Xi ^[2]; Drozdov, Ilya ^[1]; Wu, Jie ^[1]; Robinson, Ian ^[1]; Bozovic, Ivan ^[2]

Brookhaven National Lab. (BNL), Upton, NY (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States); Yale Univ., New Haven, CT (United States)

Electronic nematicity has previously been observed in La_2-xSr_xCuO₄ thin films by the angle resolved transverse resistivity method with a director whose orientation is always pinned to the crystal axes when the film is grown on an orthorhombic substrate but not when the substrate is tetragonal. Here we report on measurements of thin films grown on (tetragonal) LaSrAlO₄ and subsequently placed in an apparatus that allows the application of uniaxial compressive strain. The apparatus applied enough force to produce a 1% orthorhombicity in LaSrAlO₄ and yet no change in the electronic nematicity was observed in films under strain compared to when they were unstrained.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012704

OSTI ID:: 1566876

Alternate ID(s):: OSTI ID: 1571432

Report Number(s):: BNL-212121-2019-JAAM; BNL-212207-2019-JAAM

Journal Information:: Journal of Superconductivity and Novel Magnetism, Vol. 33, Issue 1; ISSN 1557-1939

Publisher:: SpringerCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 1 work

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Title: Strain and Electronic Nematicity in La2-xSrxCuO4

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Title: Strain and Electronic Nematicity in La_2-xSr_xCuO₄