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Title: Influence of surface nano-patterning on the placement of InAs quantum dots

Abstract

We have examined the influence of spontaneous nano-patterning on the placement of InAs quantum dots (QDs) on (Al)GaAs surfaces using an experimental-computational approach. Both atomically flat and mounded surfaces, generated via a surface instability induced by the Ehrlich- Schwoebel barrier, are employed as templates for the subsequent deposition of InAs QDs. Using height profiles from atomic-force micrographs, we simulate QD deposition with a 2D phase field model, which describes the time evolution of the InAs layer driven by a chemical potential gradient. For flat surfaces, phase-field simulations result in QD densities comparable to experimental observations. For mounded surfaces, the simulations reveal QDs preferentially positioned in regions of positive curvature (substrate valleys), e.g., at the edge of surface mounds, consistent with the anisotropic QD placement observed experimentally. We discuss the role of curvaturedriven diffusion in the spontaneous ordering of QDs, demonstrating the applicability of this mechanism to AlGaAs mounds.

Authors:
ORCiD logo [1];  [1];  [1];  [1];  [2]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]
  1. Univ. of Michigan, Ann Arbor, MI (United States)
  2. Cornell Univ., Ithaca, NY (United States)
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Solar and Thermal Energy Conversion (CSTEC); Univ. of Michigan, Ann Arbor, MI (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1566375
Alternate Identifier(s):
OSTI ID: 1471792
Grant/Contract Number:  
[SC0000957]
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
[ Journal Volume: 124; Journal Issue: 11]; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; solar (photovoltaic); solar (thermal); phonons; thermal conductivity; thermoelectric; electrodes - solar; defects; charge transport; materials and chemistry by design; optics; synthesis (novel materials); synthesis (self-assembly)

Citation Formats

Del Gaudio, D., Aagesen, L. K., Huang, S., Johnson, T. M., Faeth, B. D., Lu, H., Ziff, R. M., and Goldman, R. S. Influence of surface nano-patterning on the placement of InAs quantum dots. United States: N. p., 2018. Web. doi:10.1063/1.5008518.
Del Gaudio, D., Aagesen, L. K., Huang, S., Johnson, T. M., Faeth, B. D., Lu, H., Ziff, R. M., & Goldman, R. S. Influence of surface nano-patterning on the placement of InAs quantum dots. United States. doi:10.1063/1.5008518.
Del Gaudio, D., Aagesen, L. K., Huang, S., Johnson, T. M., Faeth, B. D., Lu, H., Ziff, R. M., and Goldman, R. S. Fri . "Influence of surface nano-patterning on the placement of InAs quantum dots". United States. doi:10.1063/1.5008518. https://www.osti.gov/servlets/purl/1566375.
@article{osti_1566375,
title = {Influence of surface nano-patterning on the placement of InAs quantum dots},
author = {Del Gaudio, D. and Aagesen, L. K. and Huang, S. and Johnson, T. M. and Faeth, B. D. and Lu, H. and Ziff, R. M. and Goldman, R. S.},
abstractNote = {We have examined the influence of spontaneous nano-patterning on the placement of InAs quantum dots (QDs) on (Al)GaAs surfaces using an experimental-computational approach. Both atomically flat and mounded surfaces, generated via a surface instability induced by the Ehrlich- Schwoebel barrier, are employed as templates for the subsequent deposition of InAs QDs. Using height profiles from atomic-force micrographs, we simulate QD deposition with a 2D phase field model, which describes the time evolution of the InAs layer driven by a chemical potential gradient. For flat surfaces, phase-field simulations result in QD densities comparable to experimental observations. For mounded surfaces, the simulations reveal QDs preferentially positioned in regions of positive curvature (substrate valleys), e.g., at the edge of surface mounds, consistent with the anisotropic QD placement observed experimentally. We discuss the role of curvaturedriven diffusion in the spontaneous ordering of QDs, demonstrating the applicability of this mechanism to AlGaAs mounds.},
doi = {10.1063/1.5008518},
journal = {Journal of Applied Physics},
number = [11],
volume = [124],
place = {United States},
year = {2018},
month = {9}
}

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