Title: Influence of surface nano-patterning on the placement of InAs quantum dots

Journal Article · · Journal of Applied Physics
DOI: https://doi.org/10.1063/1.5008518 · OSTI ID:1566375

We have examined the influence of spontaneous nano-patterning on the placement of InAs quantum dots (QDs) on (Al)GaAs surfaces using an experimental-computational approach. Both atomically flat and mounded surfaces, generated via a surface instability induced by the Ehrlich- Schwoebel barrier, are employed as templates for the subsequent deposition of InAs QDs. Using height profiles from atomic-force micrographs, we simulate QD deposition with a 2D phase field model, which describes the time evolution of the InAs layer driven by a chemical potential gradient. For flat surfaces, phase-field simulations result in QD densities comparable to experimental observations. For mounded surfaces, the simulations reveal QDs preferentially positioned in regions of positive curvature (substrate valleys), e.g., at the edge of surface mounds, consistent with the anisotropic QD placement observed experimentally. We discuss the role of curvaturedriven diffusion in the spontaneous ordering of QDs, demonstrating the applicability of this mechanism to AlGaAs mounds.

Research Organization:
Univ. of Michigan, Ann Arbor, MI (United States); Energy Frontier Research Centers (EFRC) (United States). Center for Solar and Thermal Energy Conversion (CSTEC)
Sponsoring Organization:
USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
SC0000957
OSTI ID:
1566375
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 124; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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