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Title: Non-radiative recombination at dislocations in InAs quantum dots grown on silicon

Authors:
 [1];  [1];  [2]; ORCiD logo [1];  [3];  [4]; ORCiD logo [1]
  1. Materials Department, University of California, Santa Barbara, Santa Barbara, California 93106, USA
  2. EAG Laboratories–Eurofins Materials Science, 628 Hutton St., Suite 103, Raleigh, North Carolina 27606, USA
  3. Materials Department, University of California, Santa Barbara, Santa Barbara, California 93106, USA, Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, California 93106, USA
  4. Intel Corporation, Santa Clara, California 95054, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1566273
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 115 Journal Issue: 13; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Selvidge, Jennifer, Norman, Justin, Salmon, Michael E., Hughes, Eamonn T., Bowers, John E., Herrick, Robert, and Mukherjee, Kunal. Non-radiative recombination at dislocations in InAs quantum dots grown on silicon. United States: N. p., 2019. Web. doi:10.1063/1.5113517.
Selvidge, Jennifer, Norman, Justin, Salmon, Michael E., Hughes, Eamonn T., Bowers, John E., Herrick, Robert, & Mukherjee, Kunal. Non-radiative recombination at dislocations in InAs quantum dots grown on silicon. United States. doi:10.1063/1.5113517.
Selvidge, Jennifer, Norman, Justin, Salmon, Michael E., Hughes, Eamonn T., Bowers, John E., Herrick, Robert, and Mukherjee, Kunal. Mon . "Non-radiative recombination at dislocations in InAs quantum dots grown on silicon". United States. doi:10.1063/1.5113517.
@article{osti_1566273,
title = {Non-radiative recombination at dislocations in InAs quantum dots grown on silicon},
author = {Selvidge, Jennifer and Norman, Justin and Salmon, Michael E. and Hughes, Eamonn T. and Bowers, John E. and Herrick, Robert and Mukherjee, Kunal},
abstractNote = {},
doi = {10.1063/1.5113517},
journal = {Applied Physics Letters},
number = 13,
volume = 115,
place = {United States},
year = {2019},
month = {9}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on September 25, 2020
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