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Title: Embedded boron nitride domains in graphene nanoribbons for transport gap engineering

Abstract

In this study, we numerically investigate the impact of boron nitride (BN) domains on the transport properties of graphene nanoribbons with lengths ranging from a few to several hundreds of nanometers and lateral size up to 4 nm. By varying the size and morphology of the BN islands embedded in the graphene matrix, a wide transport tunability is obtained from perfect insulating interfaces to asymmetric electron-hole transmission profiles, providing the possibility to engineer mobility gaps to improve device performances. Even in the low-density limit of embedded BN islands, transport properties are found to be highly dependent on both the BN-domain shape and the size with a strong tendency toward an insulating regime when increasing the number of ionic bonds in the ribbon. This versatility of conduction properties offers remarkable opportunities for transport gap engineering for the design of complex device architectures based on a newly synthesized one-atom hybrid layered material.

Authors:
 [1];  [2]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  2. Univ. Autónoma de Barcelona, Barcelona (Spain). Catalan Inst. of Nanotechnology (CIN2); Inst. Catalana de Recerca i Estudis Avancats, Barcelona (Spain)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Oak Ridge Leadership Computing Facility (OLCF)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1565039
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 86; Journal Issue: 16; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; materials science; physics

Citation Formats

Lopez-Bezanilla, Alejandro, and Roche, Stephan. Embedded boron nitride domains in graphene nanoribbons for transport gap engineering. United States: N. p., 2012. Web. doi:10.1103/physrevb.86.165420.
Lopez-Bezanilla, Alejandro, & Roche, Stephan. Embedded boron nitride domains in graphene nanoribbons for transport gap engineering. United States. doi:10.1103/physrevb.86.165420.
Lopez-Bezanilla, Alejandro, and Roche, Stephan. Thu . "Embedded boron nitride domains in graphene nanoribbons for transport gap engineering". United States. doi:10.1103/physrevb.86.165420. https://www.osti.gov/servlets/purl/1565039.
@article{osti_1565039,
title = {Embedded boron nitride domains in graphene nanoribbons for transport gap engineering},
author = {Lopez-Bezanilla, Alejandro and Roche, Stephan},
abstractNote = {In this study, we numerically investigate the impact of boron nitride (BN) domains on the transport properties of graphene nanoribbons with lengths ranging from a few to several hundreds of nanometers and lateral size up to 4 nm. By varying the size and morphology of the BN islands embedded in the graphene matrix, a wide transport tunability is obtained from perfect insulating interfaces to asymmetric electron-hole transmission profiles, providing the possibility to engineer mobility gaps to improve device performances. Even in the low-density limit of embedded BN islands, transport properties are found to be highly dependent on both the BN-domain shape and the size with a strong tendency toward an insulating regime when increasing the number of ionic bonds in the ribbon. This versatility of conduction properties offers remarkable opportunities for transport gap engineering for the design of complex device architectures based on a newly synthesized one-atom hybrid layered material.},
doi = {10.1103/physrevb.86.165420},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 16,
volume = 86,
place = {United States},
year = {2012},
month = {10}
}

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Cited by: 13 works
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