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Title: Hydrogen–dopant interactions in SiGe and strained Si

Journal Article · · Applied Physics Letters
DOI: https://doi.org/10.1063/1.3456395 · OSTI ID:1564695
 [1];  [2];  [2];  [3]
  1. National Technical Univ. of Athens, Athens (Greece). Dept. of Physics; Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy
  2. Vanderbilt Univ., Nashville, TN (United States). Dept. of Electrical Engineering and Computer Science
  3. Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
+ Show Author Affiliations

The appearance of carrier traps and the deactivation of dopants are typical hydrogen-related phenomena that are of prime importance to the reliability of traditional Si-based devices. Here we probe with first-principles calculations, the dynamics of hydrogen as individual impurities or in complexes with dopants in strained Si (s-Si) and SiGe systems. Here, we find that the charged state determines the tendency of hydrogen to be released from dopant sites and to shuttle between a SiGe substrate and a s-Si overlayer. In this way, the effect of hydrogen differs between accumulation and inversion cycles of s-Si and SiGe devices.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Oak Ridge Leadership Computing Facility (OLCF)
Sponsoring Organization:
USDOE Office of Science (SC)
OSTI ID:
1564695
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 25 Vol. 96; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

References (21)

Hydrogen-related defects in crystalline semiconductors: a theorist's perspective journal June 1995
Hydrogen effects in MOS devices journal September 2007
Effects of device aging on microelectronics radiation response and reliability journal July 2007
Hydrogen in MOSFETs – A primary agent of reliability issues journal June 2007
Dual role of fluorine at the Si–SiO2 interface journal November 2004
Physical mechanisms of negative-bias temperature instability journal April 2005
Hydrogen self-trapping near silicon atoms in Ge-rich SiGe alloys journal April 2006
Hydrogen in Si(100)–SiO2–HfO2 gate stacks: Relevant charge states and their location journal December 2007
Vibrational properties of elemental hydrogen centres in Si, Ge and dilute SiGe alloys journal May 2005
Microscopic structure of the hydrogen-phosphorus complex in crystalline silicon journal February 1990
Kinetics of minority-carrier-enhanced dissociation of hydrogen-dopant complexes in semiconductors journal May 1992
Accurate and simple analytic representation of the electron-gas correlation energy journal June 1992
Projector augmented-wave method journal December 1994
From ultrasoft pseudopotentials to the projector augmented-wave method journal January 1999
Bond-center hydrogen in dilute Si 1 − x Ge x alloys: Laplace deep-level transient spectroscopy journal July 2003
Local modes of bond-centered hydrogen in Si:Ge and Ge:Si journal May 2005
Nonlinear stability of E centers in Si 1 − x Ge x : Electronic structure calculations journal November 2008
Special Points in the Brillouin Zone journal December 1973
First-principles calculations of diffusion coefficients: Hydrogen in silicon journal March 1990
Hydrogen-Related Instabilities in MOS Devices Under Bias Temperature Stress journal December 2007
Common origin for enhanced low-dose-rate sensitivity and bias temperature instability under negative bias journal December 2005

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