Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling

Luisier, Mathieu; Klimeck, Gerhard

doi:10.1063/1.3386521

Title: Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling

Journal Article · 14 April 2010 · Journal of Applied Physics

DOI: https://doi.org/10.1063/1.3386521 · OSTI ID:1564694

Luisier, Mathieu ^[1]; Klimeck, Gerhard ^[1]

Purdue Univ., West Lafayette, IN (United States). Network for Computational Nanotechnology and Birck Nanotechnology Center

Nanowire band-to-band tunneling field-effect transistors (TFETs) are simulated using the Wentzel–Kramers–Brillouin (WKB) approximation and an atomistic, full-band quantum transport solver including direct and phonon-assisted tunneling (PAT). Furthermore, it is found that the WKB approximation properly works if one single imaginary path connecting the valence band (VB) and the conduction band (CB) dominates the tunneling process as in direct band gap semiconductors. However, PAT is essential in Si and Ge nanowire TFETs where multiple, tightly-coupled, imaginary paths exist between the VB and the CB.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Oak Ridge Leadership Computing Facility (OLCF); UT-Battelle LLC/ORNL, Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1564694

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 107; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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