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Title: A study of the radiation tolerance of poly-crystalline and single-crystalline CVD diamond to 800 MeV and 24 GeV protons

Abstract

We have measured the radiation tolerance of poly-crystalline and single-crystalline diamonds grown by the chemical vapor deposition (CVD) process by measuring the charge collected before and after irradiation in a 50 μm pitch strip detector fabricated on each diamond sample. We irradiated one group of sensors with 800 MeV protons, and a second group of sensors with 24 GeV protons, in steps, to (1.34 ± 0.08 × 1016) protons cm-2 and (1.80 ± 0.18 × 1016) protons cm-2 respectively. We observe the sum of mean drift paths for electrons and holes for both poly-crystalline CVD diamond and single-crystalline CVD diamond decreases with irradiation fluence from its initial value according to a simple damage curve characterized by a damage constant for each irradiation energy and the irradiation fluence. We find for each irradiation energy the damage constant, for poly-crystalline CVD diamond to be the same within statistical errors as the damage constant for single-crystalline CVD diamond. We find the damage constant for diamond irradiated with 24 GeV protons to be 0.62 $$^{+0.01}_{-0.01}$$ (stat) $$^{+0.06}_{-0.06}$$ (syst) × 10-18 cm2 (p μm)-1 and the damage constant for diamond irradiated with 800 MeV protons to be 1.04 $$^{+0.02}_{-0.02}$$ (stat) $$^{+0.04}_{-0.05}$$ (syst) × 10-18 cm2 (p μm)-1. Moreover, we observe the FWHM/MP pulse height decreases with fluence for poly-crystalline CVD material and within statistical errors does not change with fluence for single-crystalline CVD material for both 24 GeV proton irradiation and 800 MeV proton irradiation. Finally, we have measured the uniformity of each sample as a function of fluence and observed that for poly-crystalline CVD diamond the samples become more uniform with fluence while for single-crystalline CVD diamond the uniformity does not change with fluence.

Authors:
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Publication Date:
Research Org.:
Univ. of Colorado, Boulder, CO (United States); The Ohio State Univ., Columbus, OH (United States)
Sponsoring Org.:
USDOE Office of Science (SC), High Energy Physics (HEP)
Contributing Org.:
The RD42 Collaboration
OSTI Identifier:
1564370
Alternate Identifier(s):
OSTI ID: 1600547
Grant/Contract Number:  
SC0010005; SC0010061
Resource Type:
Published Article
Journal Name:
Journal of Physics. D, Applied Physics
Additional Journal Information:
Journal Name: Journal of Physics. D, Applied Physics Journal Volume: 52 Journal Issue: 46; Journal ID: ISSN 0022-3727
Publisher:
IOP Publishing
Country of Publication:
United Kingdom
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; chemical vapor deposition; single crystal diamond; polycrystalline diamond; charge collection distance; mean drift path; radiation tolerance; radiation damage constant

Citation Formats

Bäni, L., Alexopoulos, A., Artuso, M., Bachmair, F., Bartosik, M., Beck, H., Bellini, V., Belyaev, V., Bentele, B., Bes, A., Brom, J-M, Bruzzi, M., Chiodini, G., Chren, D., Cindro, V., Claus, G., Collot, J., Cumalat, J., Dabrowski, A., D’Alessandro, R., Dauvergne, D., de Boer, W., Dick, S., Dorfer, C., Dünser, M., Eremin, V., Forcolin, G., Forneris, J., Gallin-Martel, L., Gallin-Martel, M-L, Gan, K. K., Gastal, M., Giroletti, C., Goffe, M., Goldstein, J., Golubev, A., Gorišek, A., Grigoriev, E., Grosse-Knetter, J., Grummer, A., Gui, B., Guthoff, M., Hiti, B., Hits, D., Hoeferkamp, M., Hofmann, T., Hosselet, J., Hostachy, J-Y, Hügging, F., Hutton, C., Janssen, J., Kagan, H., Kanxheri, K., Kasieczka, G., Kass, R., Kis, M., Kramberger, G., Kuleshov, S., Lacoste, A., Lagomarsino, S., Lo Giudice, A., Paz, I. Lopez, Lukosi, E., Maazouzi, C., Mandic, I., Mathieu, C., Menichelli, M., Mikuž, M., Morozzi, A., Moss, J., Mountain, R., Oh, A., Olivero, P., Passeri, D., Pernegger, H., Perrino, R., Piccini, M., Picollo, F., Pomorski, M., Potenza, R., Quadt, A., Rarbi, F., Re, A., Reichmann, M., Roe, S., Becerra, D. A. Sanz, Scaringella, M., Schaffner, D., Schmidt, C. J., Schnetzer, S., Schioppa, E., Sciortino, S., Scorzoni, A., Seidel, S., Servoli, L., Smith, D. S., Sopko, B., Sopko, V., Spagnolo, S., Spanier, S., Stenson, K., Stone, R., Sutera, C., Traeger, M., Trischuk, W., Truccato, M., Tuve, C., Velthuis, J., Venturi, N., Wagner, S., Wallny, R., Wang, J. C., Weingarten, J., Weiss, C., Wengler, T., Wermes, N., Yamouni, M., and Zavrtanik, M. A study of the radiation tolerance of poly-crystalline and single-crystalline CVD diamond to 800 MeV and 24 GeV protons. United Kingdom: N. p., 2019. Web. doi:10.1088/1361-6463/ab37c6.
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Bäni, L., Alexopoulos, A., Artuso, M., Bachmair, F., Bartosik, M., Beck, H., Bellini, V., Belyaev, V., Bentele, B., Bes, A., Brom, J-M, Bruzzi, M., Chiodini, G., Chren, D., Cindro, V., Claus, G., Collot, J., Cumalat, J., Dabrowski, A., D’Alessandro, R., Dauvergne, D., de Boer, W., Dick, S., Dorfer, C., Dünser, M., Eremin, V., Forcolin, G., Forneris, J., Gallin-Martel, L., Gallin-Martel, M-L, Gan, K. K., Gastal, M., Giroletti, C., Goffe, M., Goldstein, J., Golubev, A., Gorišek, A., Grigoriev, E., Grosse-Knetter, J., Grummer, A., Gui, B., Guthoff, M., Hiti, B., Hits, D., Hoeferkamp, M., Hofmann, T., Hosselet, J., Hostachy, J-Y, Hügging, F., Hutton, C., Janssen, J., Kagan, H., Kanxheri, K., Kasieczka, G., Kass, R., Kis, M., Kramberger, G., Kuleshov, S., Lacoste, A., Lagomarsino, S., Lo Giudice, A., Paz, I. Lopez, Lukosi, E., Maazouzi, C., Mandic, I., Mathieu, C., Menichelli, M., Mikuž, M., Morozzi, A., Moss, J., Mountain, R., Oh, A., Olivero, P., Passeri, D., Pernegger, H., Perrino, R., Piccini, M., Picollo, F., Pomorski, M., Potenza, R., Quadt, A., Rarbi, F., Re, A., Reichmann, M., Roe, S., Becerra, D. A. Sanz, Scaringella, M., Schaffner, D., Schmidt, C. J., Schnetzer, S., Schioppa, E., Sciortino, S., Scorzoni, A., Seidel, S., Servoli, L., Smith, D. S., Sopko, B., Sopko, V., Spagnolo, S., Spanier, S., Stenson, K., Stone, R., Sutera, C., Traeger, M., Trischuk, W., Truccato, M., Tuve, C., Velthuis, J., Venturi, N., Wagner, S., Wallny, R., Wang, J. C., Weingarten, J., Weiss, C., Wengler, T., Wermes, N., Yamouni, M., & Zavrtanik, M. A study of the radiation tolerance of poly-crystalline and single-crystalline CVD diamond to 800 MeV and 24 GeV protons. United Kingdom. https://doi.org/10.1088/1361-6463/ab37c6
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Bäni, L., Alexopoulos, A., Artuso, M., Bachmair, F., Bartosik, M., Beck, H., Bellini, V., Belyaev, V., Bentele, B., Bes, A., Brom, J-M, Bruzzi, M., Chiodini, G., Chren, D., Cindro, V., Claus, G., Collot, J., Cumalat, J., Dabrowski, A., D’Alessandro, R., Dauvergne, D., de Boer, W., Dick, S., Dorfer, C., Dünser, M., Eremin, V., Forcolin, G., Forneris, J., Gallin-Martel, L., Gallin-Martel, M-L, Gan, K. K., Gastal, M., Giroletti, C., Goffe, M., Goldstein, J., Golubev, A., Gorišek, A., Grigoriev, E., Grosse-Knetter, J., Grummer, A., Gui, B., Guthoff, M., Hiti, B., Hits, D., Hoeferkamp, M., Hofmann, T., Hosselet, J., Hostachy, J-Y, Hügging, F., Hutton, C., Janssen, J., Kagan, H., Kanxheri, K., Kasieczka, G., Kass, R., Kis, M., Kramberger, G., Kuleshov, S., Lacoste, A., Lagomarsino, S., Lo Giudice, A., Paz, I. Lopez, Lukosi, E., Maazouzi, C., Mandic, I., Mathieu, C., Menichelli, M., Mikuž, M., Morozzi, A., Moss, J., Mountain, R., Oh, A., Olivero, P., Passeri, D., Pernegger, H., Perrino, R., Piccini, M., Picollo, F., Pomorski, M., Potenza, R., Quadt, A., Rarbi, F., Re, A., Reichmann, M., Roe, S., Becerra, D. A. Sanz, Scaringella, M., Schaffner, D., Schmidt, C. J., Schnetzer, S., Schioppa, E., Sciortino, S., Scorzoni, A., Seidel, S., Servoli, L., Smith, D. S., Sopko, B., Sopko, V., Spagnolo, S., Spanier, S., Stenson, K., Stone, R., Sutera, C., Traeger, M., Trischuk, W., Truccato, M., Tuve, C., Velthuis, J., Venturi, N., Wagner, S., Wallny, R., Wang, J. C., Weingarten, J., Weiss, C., Wengler, T., Wermes, N., Yamouni, M., and Zavrtanik, M. Fri . "A study of the radiation tolerance of poly-crystalline and single-crystalline CVD diamond to 800 MeV and 24 GeV protons". United Kingdom. https://doi.org/10.1088/1361-6463/ab37c6.
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@article{osti_1564370,
title = {A study of the radiation tolerance of poly-crystalline and single-crystalline CVD diamond to 800 MeV and 24 GeV protons},
author = {Bäni, L. and Alexopoulos, A. and Artuso, M. and Bachmair, F. and Bartosik, M. and Beck, H. and Bellini, V. and Belyaev, V. and Bentele, B. and Bes, A. and Brom, J-M and Bruzzi, M. and Chiodini, G. and Chren, D. and Cindro, V. and Claus, G. and Collot, J. and Cumalat, J. and Dabrowski, A. and D’Alessandro, R. and Dauvergne, D. and de Boer, W. and Dick, S. and Dorfer, C. and Dünser, M. and Eremin, V. and Forcolin, G. and Forneris, J. and Gallin-Martel, L. and Gallin-Martel, M-L and Gan, K. K. and Gastal, M. and Giroletti, C. and Goffe, M. and Goldstein, J. and Golubev, A. and Gorišek, A. and Grigoriev, E. and Grosse-Knetter, J. and Grummer, A. and Gui, B. and Guthoff, M. and Hiti, B. and Hits, D. and Hoeferkamp, M. and Hofmann, T. and Hosselet, J. and Hostachy, J-Y and Hügging, F. and Hutton, C. and Janssen, J. and Kagan, H. and Kanxheri, K. and Kasieczka, G. and Kass, R. and Kis, M. and Kramberger, G. and Kuleshov, S. and Lacoste, A. and Lagomarsino, S. and Lo Giudice, A. and Paz, I. Lopez and Lukosi, E. and Maazouzi, C. and Mandic, I. and Mathieu, C. and Menichelli, M. and Mikuž, M. and Morozzi, A. and Moss, J. and Mountain, R. and Oh, A. and Olivero, P. and Passeri, D. and Pernegger, H. and Perrino, R. and Piccini, M. and Picollo, F. and Pomorski, M. and Potenza, R. and Quadt, A. and Rarbi, F. and Re, A. and Reichmann, M. and Roe, S. and Becerra, D. A. Sanz and Scaringella, M. and Schaffner, D. and Schmidt, C. J. and Schnetzer, S. and Schioppa, E. and Sciortino, S. and Scorzoni, A. and Seidel, S. and Servoli, L. and Smith, D. S. and Sopko, B. and Sopko, V. and Spagnolo, S. and Spanier, S. and Stenson, K. and Stone, R. and Sutera, C. and Traeger, M. and Trischuk, W. and Truccato, M. and Tuve, C. and Velthuis, J. and Venturi, N. and Wagner, S. and Wallny, R. and Wang, J. C. and Weingarten, J. and Weiss, C. and Wengler, T. and Wermes, N. and Yamouni, M. and Zavrtanik, M.},
abstractNote = {We have measured the radiation tolerance of poly-crystalline and single-crystalline diamonds grown by the chemical vapor deposition (CVD) process by measuring the charge collected before and after irradiation in a 50 μm pitch strip detector fabricated on each diamond sample. We irradiated one group of sensors with 800 MeV protons, and a second group of sensors with 24 GeV protons, in steps, to (1.34 ± 0.08 × 1016) protons cm-2 and (1.80 ± 0.18 × 1016) protons cm-2 respectively. We observe the sum of mean drift paths for electrons and holes for both poly-crystalline CVD diamond and single-crystalline CVD diamond decreases with irradiation fluence from its initial value according to a simple damage curve characterized by a damage constant for each irradiation energy and the irradiation fluence. We find for each irradiation energy the damage constant, for poly-crystalline CVD diamond to be the same within statistical errors as the damage constant for single-crystalline CVD diamond. We find the damage constant for diamond irradiated with 24 GeV protons to be 0.62 $^{+0.01}_{-0.01}$ (stat) $^{+0.06}_{-0.06}$ (syst) × 10-18 cm2 (p μm)-1 and the damage constant for diamond irradiated with 800 MeV protons to be 1.04 $^{+0.02}_{-0.02}$ (stat) $^{+0.04}_{-0.05}$ (syst) × 10-18 cm2 (p μm)-1. Moreover, we observe the FWHM/MP pulse height decreases with fluence for poly-crystalline CVD material and within statistical errors does not change with fluence for single-crystalline CVD material for both 24 GeV proton irradiation and 800 MeV proton irradiation. Finally, we have measured the uniformity of each sample as a function of fluence and observed that for poly-crystalline CVD diamond the samples become more uniform with fluence while for single-crystalline CVD diamond the uniformity does not change with fluence.},
doi = {10.1088/1361-6463/ab37c6},
journal = {Journal of Physics. D, Applied Physics},
number = 46,
volume = 52,
place = {United Kingdom},
year = {Fri Aug 30 00:00:00 EDT 2019},
month = {Fri Aug 30 00:00:00 EDT 2019}
}
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